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PDF
DS75LX.pdf
Packages Servers PIN CONFIGURATIONS ORDERING INFORMATION PART TEMP RANGE PIN PACKAGE SDA 1 8 VDD 8 SO D DS75LXS+ -55°C to +125°C (150 mils) SCL 2 L S 7 A0 8 SO X 5 DS75LXS+T&R -55°C to +125°C (150 mils), O.S. 3 6 A 2500 Piece 1 DS75LXU+ -55°C to +125°C 8 µSOP GND 4 5 A2 (µMAX) 8 µSOP SO (150 mils) DS75LXU
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MC_product_selection_AN.pdf
Single-Cell, Fully Integrated Li-Ion/Li-Polymer Charge Management Controllers”, Microchip Technology Inc., DS22036, 2007. [10] MCP73831/2 Data Sheet, “Miniature Single- Cell, Fully Integrated Li-Ion/Li-Polymer Charge Management Controllers”, Microchip Technol- ogy Inc., DS21984, 2006. DS01088A-page 10 © 2007
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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AN1152_Achieving_Higher_ADC_Resolution.pdf
amplified signal is fed to kHz. An improvement of ~24 dB is expected using this the ADC pin of the dsPIC DSC. As previously technique. discussed, the dsPIC DSC does the oversampling, filtering and decimation to achieve accuracy improvement. fi FIGURE 8: BLOCK DIAGRAM WITH dsPIC DIGITAL SIGNAL CONTROLLER
in „Berechnung zur Auflösung ADC - wie richtig?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Code_Wordclock_V3.txt
Tasters TastS_ = 0; // Da nicht mehr betätigt den Merker für den nächsten Durchlauf zurück setzen SetzenDS1307(2,inttoBCD(Stunden)); // Schreiben der Zeit aus dem Zwischenspeicher in die RTC SetzenDS1307(1,inttoBCD(Minuten)); // RTC nimmt nur BCD, deshalb bei der Übergabe wandeln SetzenDS1307(0,0); // Sekunden
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doc6241-1369051.pdf
PC11 PB11 A11 PC11 D11 PA12 MISO PB12 PC12 PB12 A12 PC12 D12 PA13 MOSI PB13 PC13 PB13 A13 PC13 D13 PA14 SPCK PB14 PC14 PB14 A14 PC14 D14 PA15 TF PB15 PC15 PB15 A15 PC15 D15 PA16 TK PB16 PC16 PB16 A16 PB18 D16 PA17 TD PB17 PC17 NANDOE PB17 A17 PB19 D17 PA18 PB18 NANDCS PC18 NANDWE PC16 A18 PB20 D18 PA19
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Datei
SYSGEN.ASM
NOFILE: DB 'NO SOURCE FILE ON DISK',0 BADFILE: DB 'SOURCE FILE INCOMPLETE',0 ; ; VARIABLES SDISK: DS 1 ;SELECTED DISK FOR CURRENT OPERATION TRACK: DS 1 ;CURRENT TRACK SECTOR: DS 1 ;CURRENT SECTOR RW: DS 1 ;READ IF 0, WRITE IF 1 DMADDR: DS 2 ;CURRENT DMA ADDRESS RETRY: DS 1 ;NUMBER OF TRIES ON THIS SECTOR DS STACKSIZE*2 STACK: END
in „CP/M auf ATmega88“ · Mikrocontroller und Digitale Elektronik ·
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ds.pdf
Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 20 100 Tj= 25 ℃ 6 V V = 10 V 5.5 V DS 10 V ) T j 25 ℃ A 10 ) 15 8 V n ( r n u e c u i 1 c 10 r i D r ID D 5 V 0.1 ,D I 5 0.01 V GS4.5 V 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 V , Drain-source voltage (V) V , Gate-source voltage(V) DS GS
in „Ersatz für MOSFET OSG80R250F gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OKI_C1937-01.pdf
version: Nov. 1997 ¡ Semiconductor MSC1937-01 Semiconductor Previous version: Jul. 1996 MSC1937-01 14/16-Segment · 16-Digit Display Controller/Driver GENERAL DESCRIPTION MSC1937-01 is a Bi-CMOS alphanumeric display controller designed to interface with either vacuum fluorescent display. MSC1937-01candrivedisplayswithupto16digitswitheither14or16segmentsplusadecimal
in „SPI VFD-Display OKIC1937-01“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SAMA5D2_PTC_Firmware_UG.pdf
parameter to a higher value, increasing also the acquisition time. © 2017 Microchip Technology Inc. DS50002705A-page 14 PTC Subsystem Firmware 3.2.2.2 Electrode Capacitance to Earth (Cy, Cyx) Self-capacitance or mutual capacitance of the sense electrode (between 2 and 30pF, minimum 6x6 mm electrode) has
in „Was ist bzw. war Atmel QTouch?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
kc85keyboard_V0.ino
tD1 = 7 tu = 7,168 ms Pulsabstand für logische Eins #define TIME_WORD 13500//10% unter 14300 //tDW = 14 tu = 14,336 ms Wortabstand #define TIME_DOUBLEWORD 185000 //tDS = 13 tu = 19,456 ms Doppelwortabstand //?? keine doku dazu gefunden #define TIME_MAXIMUM 200000 #define TIME_AUTORESET_LOOP 10000 //milliseconds
in „Tastatur KC85 mit USB-Anschluss ausrüsten“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Plotclock_v1_2.ino
instructions on how to hook up a real time clock, // see here -> http://www.pjrc.com/teensy/td_libs_DS1307RTC.html // DS1307RTC works with the DS1307, DS1337 and DS3231 real time clock chips. // Please run the SetTime example to initialize the time on new RTC chips and begin running. #include <Wire.h>
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BP2836D.pdf
On Time 40 us V ROVP ROVP Pin Voltage 0.5 V MOSFET Section R Static Drain-source V =15V/I =0.4A 3 Ω DS_ON On-resistance GS DS Drain-Source Breakdown BV DSS Voltage VGS0V/I =DS0uA 500 V Power MOSFET Drain IDSS VGS0V/V =5DSV 1 uA Leakage Current Thermal Regulation Section Thermal Regulation TREG 150 ℃ Temperature
in „LED Deckenlampe dimmen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS-Type-S-SZ-Mersen_2.pdf
107 10 1,0 10210025054 g r . e e M 2 2 © Capacitors / DS-Type-S-01-2024_EN MERSEN.COM CA 89 Type S/SZ ELECTROLYTIC Central Mounted Capacitors CAPACITORS ELECTRICAL DATA AND ORDERING CODE FOR SERIES SZ Rated Ratedcap. Casesize Typ.ESR tan δ RipplecurrentIR~
in „Elko rauh in AEG-Stroboskop von 1955 ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS-Type-S-SZ-Mersen_2.pdf
107 10 1,0 10210025054 g r . e e M 2 2 © Capacitors / DS-Type-S-01-2024_EN MERSEN.COM CA 89 Type S/SZ ELECTROLYTIC Central Mounted Capacitors CAPACITORS ELECTRICAL DATA AND ORDERING CODE FOR SERIES SZ Rated Ratedcap. Casesize Typ.ESR tan δ RipplecurrentIR~
in „Elko rauh in AEG-Stroboskop von 1955 ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AND9093-D.PDF
When EN is HIGH, Q1 turns on, the pass transistor gate is pulled to ground, and the MOSFET has an R DS(on) advantage over the P-channel MOSFET for a given die size. The R DS(on)of an N-channel load switch turns off. Resistor R1 is selected so that device can be two times lower than the R DS(on) of milliamps
in „Widerstandsdimensionierung im Betrieb als Schalter für RC Elektronik mit IRLIZ44N“ · Analoge Elektronik und Schaltungstechnik ·
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HMYX_D8575N.pdf
DSS Drain-Source Breakdown Voltage V GSV I =D50μA 30 V DSS Zero Gate Voltage Drain Current(Tc=25℃) V DS0V, V =0GS 1 μA GSS Gate-Body Leakage Current VGS±20V, V =DS ±100 nA V GS(th) Gate Threshold Voltage VDSV ,GS =D50μA 1.0 1.5 2.5 V VGS10V, I D15A 6.7 8.0 mΩ R DS(ON) Drain-Source On-State Resistance 2
in „Lidl kann auch anders (Lötstation)“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
RSP-750-12.pdf
7 13 TB1 REMOTE CN50 +S -S PV PC DC_OK GND ON-OFF SW 1 13 +VS -VS PS PO GND G-AUX 12V-AUX 2 4 6 8 14 -V +V 2 14 LOAD - + Fig 2.1 Between Remote ON-OFF(pin13) and 12V-AUX(pin14) Power Supply Status SW close (Short) ON SW open (Open) OFF ◎ When multiple power supplies need to turn ON/OFF simultaneously
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PDF
ug1091-carrier-card-design.pdf
bank 66 D11 GC HPA09_N HPIO on bank 66 D12 GND Ground, connect to carrier card ground plane D13 HPA14_P HPIO on bank 66 D14 HPA14_N HPIO on bank 66 D15 GND Ground, connect to carrier card ground plane D16 HDGC HDA00_CC HDIO clock-capable pin on bank 45 UG1091 (v1.2) March 16, 2022 www.xilinx.com Send
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Datei
Lcd.asm
-> 094H..0A7H ;|Z 000,000mm | Zeile3 -> 0BCH..0CFH ;+--------------------+ Zeile4 -> 0D0H Zeile0: DS 20 Zeile2: DS 20 Zeile1: DS 20 Zeile3: DS 20 ;------------------------------------------------------------------------------- CSeg Include Macros.INC ;------------------------------------------------
in „Display HD44780 mit 8051er“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NCP380-D.PDF
Vin(V) Figure 19. Quiescent Current vs Vin www.onsemi.com 13 NCP380, NCV380 TSOP Package 100 95 R DS(on) vs. Temperature 90 85 80 ) W m 75 () o 70 S D 65 R 60 55 50 45 40 −50 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) Figure 20. R vs Temperature, TSOP Package DS(on) mDFN Package 100 95 R DS(on) vs. Temperature 90 85 ) 80 W m 75 () o 70 S 65 D R 60 55 50 45 40 −50 −40 −30 −20 −10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Temperature (°C) Figure 21. R DS(on) vs Temperature, mDFN Package
in „5V USB 500mA Begrenzung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Test.c
/PIC hardware mapping #define _XTAL_FREQ 500000 //config bits that are part-specific for the PIC18F14K22 __CONFIG(1, FOSC_IRC & PLLEN_OFF & FCMEN_OFF); __CONFIG(2, PWRTEN_OFF & BOREN_OFF & WDTEN_OFF); __CONFIG(3, HFOFST_OFF & MCLRE_OFF); __CONFIG(4, STVREN_ON & LVP_OFF & DEBUG_ON); __CONFIG(5, CP0_OFF
in „Suche 4-Bit Binärzähler“ · Mikrocontroller und Digitale Elektronik ·
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71858.pdf
VGS(th) VDS = VGS ,DI = 250 µA 0.6 1.4 V Gate-Body Leakage GSS VDS = 0 V, VGS = ± 8 V ± 100 nA I V DS = 12 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 12 V, V = 0 V, T = 70 °C 5 µA DS GS J On-State Drain Currenta ID(on) V DS≥ 5 V, VGS = 4.5 V 40 A V GS = 4.5 V,DI = 17 A 0.0045 0.0055 Drain-Source On-State Resistance a R DS(on) Ω V GS = 2.5 V,DI = 14 A 0.0065 0.008 a Forward Transconductance gfs V DS = 6 V,DI = 17 A 80 S a Diode Forward Voltage VSD IS= 2.7 A, VGS = 0 V 0.70 1.1 V b Dynamic Total Gate Charge Q 21 30 g Gate-Source
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tle5206_motorbridge.pdf
for DC motor management applications Operates at supply voltages up to 40 V P-TO220-7-11 Very low R DS ON; typ. 200 Ω @ 25 °C per switch Output full short circuit protected Overtemperature protection with hysteresis and diagnosis Short circuit diagnosis with open drain error flag Undervoltage lockout
in „Diskrete H-Brücke“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
nrf24l01_drv.c
rf_status_reg); if (!to--) { CE_LOW; RF_PowerUpRx(); return RF_TIMEOUT; } } while ((rf_status_reg.tx_ds == false) && (rf_status_reg.max_rt == false)); CE_LOW; /* Modul ist jetzt im Standby-II Mode, zurückschalten in RX Mode */ RF_PowerUpRx(); /* Keine Antwort? */ if (!rf_status_reg.tx_ds) return RF_NO_ACK
in „[STM32F4xx] NRF24L01+ Funkmodul Source Code“ · Projekte & Code ·
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Datei
nrf24l01_drv.c
rf_status_reg); if (!to--) { CE_LOW; RF_PowerUpRx(); return RF_TIMEOUT; } } while ((rf_status_reg.tx_ds == false) && (rf_status_reg.max_rt == false)); CE_LOW; /* Modul ist jetzt im Standby-II Mode, zurückschalten in RX Mode */ RF_PowerUpRx(); /* Keine Antwort? */ if (!rf_status_reg.tx_ds) return RF_NO_ACK
in „Basteltip: STM32F103 DIP40 Board“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Targetholder.pdf
PWR_FLAG PWR_FLAG Close Switch1 11 36 U0RXD Voltage Stabilization Linear Voltage Regulator J7 GSB1C411111DS1HR IO18 RXD0 B SDA 12 IO8 TXD0 37 U0TXD SH1234 +48V 1 B Alt D+ 13 38 Stop Switch2 ESP_3,3V SHIELD 2 +3.3V 4,7k IO19 IO2 GND R5 Alt D- 14 IO20 IO1 39 Open Switch2 B1A12 A1B12 +5V 3 15 40 GND_B GND_A 4
in „ESP32 Platine funktioniert nicht (Türöffner)“ · Platinen ·
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PDF
External_Clock_DS1090.pdf
control pins. Ordering Information OUTPUT PIN- PART FREQUENCY PRESCALER RANGE PACKAGE Applications DS1090U-1+ 4MHz to 8MHz 1 8 μSOP Switched-Mode Power Supplies DS1090U-2+ 2MHz to 4MHz 2 8 μSOP Servers DS1090U-4+ 1MHz to 2MHz 4 8 μSOP Printers 500kHz to DS1090U-8+ 1MHz 8 8 μSOP Embedded Microcontrollers
in „Master-Clock (Takt) an 64 ICs verteilen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FQB34P10.pdf
150°C -- -- -10 µA T I Gate-Body Leakage Current, Forward V = -25 V, V = 0 V -- -- -100 nA ® GSSF GS DS M IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, DS = 0 V -- -- 100 nA O S On Characteristics E V V = V , I = -250 µA T GS(th) Gate Threshold Voltage DS GS D -2.0 -- -4.0 V R DS(on) Static Drain-Source
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N7000-D.PDF
http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable • This is a Pb−Free Device* 60 VOLTS R DS(on) = 5 W N−Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage GS = 1.0 MW) VDGR 60 Vdc G Gate−Source Voltage − Continuous V GS ±20 Vdc S − Non−repetitivp
in „ESD-Demonstrator / 2n7000 MOS-FET zerstören“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK100-50GL_1.pdf
voltage V IS0 V; I DM = 1 A; p ≤ 300 s; - - 70 V δ ≤ 0.01 IDSS Zero input voltage drain current V DS= 12 V; V IS0 V - 0.5 10 A IDSS Zero input voltage drain current V DS= 50 V; V IS0 V - 1 20 A I Zero input voltage drain current V = 40 V; V = 0 V; T = 125 ˚C - 10 100 A DSS DS IS j R DS(ON) Drain-source
in „Beleuchtung mit 8515 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
msp430f5529.pdf
DVSS 0 DVCC 1 1 P7DIR.x 0 Direction 1 0: Input 1: Output P7OUT.x 0 From module 1 P7.0/CB8/(A12) P7DS.x P7.1/CB9/(A13) P7SEL.x 0: Low drive P7.2/CB10/(A14) 1: High drive P7.3/CB11/(A15) P7IN.x EN Bus Keeper To module D 92 Copyright © 2009–2011, Texas Instruments Incorporated MSP430F551x MSP430F552x www.ti.com
in „Fragen zu ADC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GWM120-0075P3.pdf
V; TVJ 25°C 1 µA with optimized heat transfer TVJ 125°C 0.1 mA I V = ±20 V; V = 0 V 0.2 µA GSS GS DS Q 91 nC g Q gs VGS 10 V; V DS= 60 V; ID= 25 A 19 nC Q gd 28 nC td(on) 36 ns t V = 10 V; V = 30 V; 56 ns r GS DS td(off) D = 25 A; RG= 10 Ω 130 ns tf 50 ns VF (diode) F = 60 A; GS= 0 V 0.9 1.4 V trr (
in „Umrichter für E-Kart Anwendung 60V / 120A“ · Mikrocontroller und Digitale Elektronik ·
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axpert_vm_iii5000__c.pdf
CSD19505KCS (VMIII-3200)Resistor GS: 11.75k Short or explosion TK100E08N1 (VMIII-5200) GD: 115.8k DS: OL Diode SD: 0.463V DS: OL Note1: When you use the multimeter to measure the resistor of the transistor, because of the capacitor in the circuit, it will cause the changing of the values when you measure
in „PV Wechselrichter startet nicht mehr und verursacht Kurzschluss bzw. hohen Strom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
A4963-Datasheet.pdf
Undervoltage VS Undervoltage on VBB AH Phase A High-side V AH V Fault Detected on Phase A High-side DS DS AL Phase A Low-side V AL V Fault Detected on Phase A Low-side DS DS BH Phase B High-side V DS BH V DS Fault Detected on Phase B High-side BL Phase B Low-side V DS BL V DS Fault Detected on Phase B Low-side CH Phase C High-side V DS CH V DS Fault Detected on Phase C High-side CL Phase C Low-side V DS CL V DS Fault Detected on Phase C Low-side xx Fault Mask Default FF Diagnostic Register Flag 0 Fault Detection Permitted D POR Power-On
in „A4963 BLDC Motor Ansteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162828-da-01-en-IRLML_2803TR.pdf
On-Resistance Ω GS D 0.40 VGS = 4.5V,DI = 0.46A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 0.87 S VDS = 10V, D = 0.46A 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 25 VDS = 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage -100 V =
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS138-D.PDF
Temperature ID = 250 µA,Referenced to 25°C mV/°C ∆T J Coefficient 72 DSS Zero Gate Voltage Drain Current V DS= 50 V, VGS = 0 V 0.5 µA V DS= 50 V,V GS = 0 V TJ= 125°C 5 µA V DS= 30 V, VGS = 0 V 100 nA GSS Gate–Body Leakage. V GS= ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage
in „Wer kann Helfen versehentlicher Kurzschluss. Wer kennt dieses Bauteil?“ · Analoge Elektronik und Schaltungstechnik ·
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Prime_Sense_DevKit_V2_reduced_size.pdf
A2 A7 DQ6 H5 F31 H8 38 DIN13 ROUT13 71 F3 U30 B5 E5 E31 H7 39 72 E2 T30 A5 A8 DQ7 F2 K29 K8 40 DIN14 ROUT14 73 E1 T28 C5 A9 DQ8 G2 L29 DIN15 ROUT15 T29 D5 A10 DQ9 F3 H30 DS92LV16 VHG A11 DQ10 U27 B6 A12 DQ11 G3 G31 U28 A6 A13 DQ12 F4 30 R26 C6 A14 DQ13 G5 31 R27 D6 F5 L30 U26 E6 A15 DQ14 G6 M30 D T26
in „Preisgünstige elektronische Geräte für reverse-engineering - Part 3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SED1181.pdf
70 V2 11 SEG17 31 NC 51 SEG46 71 V3 12 SEG16 32 D1 52 SEG47 72 VSS 13 SEG15 33 D0 53 SEG48 73 VDD 14 SEG14 34 XSCL 54 SEG49 74 DO1 15 SEG13 35 LP 55 SEG50 75 NC 16 SEG12 36 FR 56 SEG51 76 NC 17 SEG11 37 SEG32 57 SEG52 77 SEG31 18 SEG10 38 SEG33 58 SEG53 78 SEG30 19 SEG 9 39 SEG34 59 SEG54 79 SEG29 20
in „Implementation eines komplexen SPI-Slaves“ · Mikrocontroller und Digitale Elektronik ·
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PDF
7.5inch-e-paper-specification.pdf
Gray1(LUTG1) (261-byte 0 0 0 0 1 0 0 0 1 1 23h 15 command, bytes 2~14 repeated 20 times) LUT Gray2(LUTG2) (261-byte 0 0 0 0 1 0 0 1 0 0 24h 16 command, bytes 2~14 repeated 20 times) LUT Red0(LUTR0) (261-byte 0 0 0 0 1 0 0 1 0 1 25h 17 command, bytes 2~14 repeated 20 times
in „7.5" Waveshare E-Parper ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mtouch_ug.pdf
Application Maestro, CodeGuard, devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, In-Circuit Serial hold harmless Microchip from any and all damages
in „Näherungsschalter durch 1mm Aluminium“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Regler_LM3488.pdf
parameters for selection of a MOSFET are: 1. Minimum threshold voltage, V (MTH) 2. On-resistance, R (DS) 3. Total gate charge, Q g 4. Reverse transfer capacitance, C RSS 5. Maximum drain to source voltage, V DS(MAX) The off-state voltage of the MOSFET is approximately equal to the output voltage. V DS(
in „Kein PWM-Signal bei DC-DC Wandler; 12->140V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
UHP-1000_Netzteil.pdf
By factory default, the Output Current Programming is not activated, and VCCS(pin13) and PC-DIS(pin14) are shorted by connector. Whenever this function is not needed to activate, as assumed in other sections’ diagrams, please keepVCCS(pin13) andPC-DIS(pin14) shorted ; otherwise, the power supply will
in „Wie mit einem attiny/atxmega eine analoge Ausgansspannung erzeugen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
l6599.pdf
peak current to drive the upper MOSFET of the half-bridge leg. A resistor internally connected to pin 14 (OUT) ensures that the pin is not floating during UVLO. High-side gate-drive floating supply Voltage. The bootstrap capacitor connected between 16 VBOOT this pin and pin 14 (OUT) is fed by an internal
in „Hilfe bei der Reparatur eines Schaltnetzteiles erbeten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
8810-TuofengSemiconductor_002.pdf
Drain-Source Breakdown Voltage I =250µA, V =0V 20 V DSS D GS IDSS Zero Gate Voltage Drain Current V DS=16V, V GSV 1 µA IGSS Gate-Body leakage current VDS0V, V =GS2V ±15 µA V GS(th) Gate Threshold Voltage VDSV GS D =250µA 0.5 0.6 1 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS VGS =4.5V, D =6A 20 22 mΩ R DS(ON) Static Drain-Source On-Resistance V GS.5V, I D5.5A 28 30 mΩ g FS Forward Transconductance VDS =5V, D =6A 29 S V Diode Forward Voltage I =1.5A,V =0V 1.2 V SD S GS IS Maximum Body-Diode Continuous
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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PDF
Switch.pdf
-G5LE-14-DC12 G5LE-14-DC12 A1 SPDT 33.3 360.0 12 400 653-G5LE-14-AP3-DC12 G5LE-14-AP3-DC12 A1 SPDT 33.3 360.0 12 400 ** 653-G5LE-14-DC24 G5LE-14-DC24 A1 SPDT 16.7 1440.0 24 400 ** 653-G5LE-14-AP3-DC24 G5LE-14
in „Ausfallursache Printtaster DeLonghi Kaffeeautomat?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ATHDDRIV.ASM.txt
dConfig.sys ; ; .286 ; sowieso nur ab ATs! code segment public 'ATCODE' atdrive proc far assume cs:code, ds:code, es:code org 0 header dd -1 ; Verbindung zum naechsten ; Treiber = Ende der Liste dw 8000h ; Geraete-Attribut-Wort dw strat ; Eintrittspunkt fuer ; Strategie-Routine dw intr ; Eintrittspunkt fuer
in „HDD Festplatte ATA IDE an AVR µC Mikrocontroller ATmega1284p Assembler - viele Fragen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF540-VIS.PDF
Gate Voltage Drain Current DSS DS GS 25 µA VDS = 80 V, VGS = 0 V, J = 150 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V D = 17 Ab - - 0.077 Ω Forward Transconductance g fs VDS = 50 V, D = 17 Ab 8.7 - - S Dynamic Input
in „MOSFET für eine Stromgesteuerte Stromquelle“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Readme_130816.pdf
auslesen ds1631.py - TWI-Temperatursensor auslesen bmp085.py - TWI-Luftdruck-/Temperatursensor auslesen srf02.py - TWI-Ultraschall-Entfernungsmesser SRF02 auslesen pcf8574.py - TWI-Portexpander PCF8574 Pins setzen
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Datei
FFT232b.asm
subw B, D ; addw C, D ; stw Z+, C ;/ movw T0L, ZL movw ZL, T14L ;C=cos(p), D=sin(p) addiw Z, t_cos_sin128*2 ; lpmw C, Z+ ; lpmw D, Z+ ;/ movw ZL, T0L FMULS16 A, C, T4, T2 ;[Y+0] = A * C + B * D FMULS16 B, D, T8, T6 ;[Y+2] = B * C - A * D addw T2, T6 ; adcw T4, T8
in „Schnelle FFT in Assembler“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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formelsammlung.pdf
t) ⋅v(t) dt u v Die Tangente liegt in der von x und x avfgespannten Ebene. d xog ⊥ (x × x ) dt u v 14.2.3 Koeffizienten der 1. Fundamentalform: Die Bogenlänge wird bestimmt durch 2 2 ds d & &2 dt = dt (xog = x u + x vv = x u uu+ 2x x uu +vx x v v v& 2 1 23 { F { G E E, F, G heißen Koeffizienten der 1. Fundamentalform. 2 2 2 Schreibweise: ds = E ⋅du + 2F ⋅du⋅dv +G⋅dv 14.2.4 Eigenschaften, Anwendungen: Sei x: G ⊂¯ a¯ die Parameterdarstellung der Fläche x(G) und E, F, G die Koeffizienten 14 4244 3 (u,ax u,v) der 1. Fundamentalform. Dann kann
in „linear Interpolieren mit mehreren Parametern“ · Digitale Signalverarbeitung / DSP / Machine Learning ·