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PDF
AF143086415692en-000101.pdf
., Secop compressors produced for Danfoss has transcended the barriers for mobile refrigeration. * P Compressors Capacity [W] at max. speed **** a R134a EN12900 Household/CECOMAF | ASHRAE e R404A/R507 * Evaporating temperature [°C] f R600a **, R290 *** r -40 -35 -30 -25 -23.3 -20 -15 -10 -5 0 5 7.2
in „Kompressor für Campingkühlschrank - elektrischer Anschluss?“ · Fahrzeugelektronik ·
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PDF
Danfoss_Katalog_BLDC_Compressors.pdf
., Secop compressors produced for Danfoss has transcended the barriers for mobile refrigeration. * P Compressors Capacity [W] at max. speed **** a R134a EN12900 Household/CECOMAF | ASHRAE e R404A/R507 * Evaporating temperature [°C] f R600a **, R290 *** r -40 -35 -30 -25 -23.3 -20 -15 -10 -5 0 5 7.2
in „12V Kompressor Kühlbox - Steuerung defekt - eigenes Thermostat verwenden“ · Haus & Smart Home ·
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PDF
LM230WF5-TLD1-LG.pdf
880 or equivalent 50cm Table 10. Optical characteristics Ta= 25¶C , V =5.0V,V=60Hz f =119MHz, I =120mA LCD CLK BL Values Parameter Symbol Units Notes Min Typ Max Contrast Ratio CR 700 1000 - 1 Surface Luminance, white LWH 200 250 - cd/m2 2 Luminance Variation G WHITE 9P 75 % 3 Rise Time Tr - 1.3 2.6 ms
in „Pollin LVDS Interface im Einsatz -> Falschfarben“ · Mikrocontroller und Digitale Elektronik ·
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BC546_547_3.pdf
C = 100 mA; B = 5 mA − 200 600 mV VBEsat base-emitter saturation voltagC = 10 mA; B = 0.5 mA; note 1 − 700 − mV C = 100 mA; B = 5 mA; note 1 − 900 − mV VBE base-emitter voltage C = 2 mA; VCE= 5 V; note 2 580 660 700 mV C = 10 mA; VCE= 5 V − − 770 mV C collector capacitance I = i = 0; V = 10 V; f = 1 MHz − 1.5 − pF c E e CB Ce emitter capacitance C = c = 0;EB = 0.5 V; f = 1 MHz− 11 − pF T transition frequency C = 10mA; VCE =
in „Rätselhafter Transistor“ · Mikrocontroller und Digitale Elektronik ·
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F10392.pdf
:370, B:120 mA 3. Absolute Maximum Ratings (at T =25ºCA Parameter Symbol Value Unit Forward Current I 1.2 A F Power Dissipation P D 3.5 W Junction Temperature T j 125 ºC Operating Temperature Topr -30 ~ +85 ºC Storage
in „LED dynamic resistance“ · Mikrocontroller und Digitale Elektronik ·
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PDF
F10392.pdf
:370, B:120 mA 3. Absolute Maximum Ratings (at T =25ºCA Parameter Symbol Value Unit Forward Current I 1.2 A F Power Dissipation P D 3.5 W Junction Temperature T j 125 ºC Operating Temperature Topr -30 ~ +85 ºC Storage
in „[V] 6 X Power RGB LED 3W Seoul Semiconductor F10392 Star“ · Markt ·
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Datei
e3d_ic.inc
and Crystal Oscillators - (8, 14, 16, or 24) pin body, with only 4, 8 or 12 outer pins. // The " a= Available Pins" parameter is how many pins (modulo 4), are present on the intended DIP. //Grundmakro für DIP's //p=Pincount of a full DIL //a=Count of available pins, ( less than or equal to "p" ) /
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Datei
RX62N_Test.lst
MOV.L #00000000H,R4 00000093 7543FE MOV.L #000000FEH,R3 00000096 6612 MOV.L #00000001H,R2 00000098 66A1 MOV.L #0000000AH,R1 0000009A 05rrrrrr A BSR _R_IO_PORT_WriteAll 0000009E EC75 MOV.L [R7],R5 000000A0 61A5 CMP #0AH,R5 000000A2 3Brrrr W BNE L28 000000A5 L29: 000000A5 F86401 MOV.B #01H,[R6] 000000A8
in „Erfahrung RX62N Renesas“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MR2535L-D.PDF
Response Figure 6. Steady State Thermal Resistance ) 100 10000 ( ) T TJ= 25°C ( N R TJ= 25°C R E R W C P E E S S E E1000 V V R R K K A A P P , , S S I R 10 P 100 1 10 100 1000 1 10 100 1000 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current Figure 8. Maximum Peak Reverse Power 1000 2400 ( Y ) G (2000 E TJ= 25°C R N E E 100 W1600 Time Constant = 10 mS S P R E V S1200 E E R V A 10 R 800 E K Time Constant = 100 mS , A M P 400 R W 1 0 1 10 100 1000 25 50 75 100 125 150 t, TIME CONSTANT (mS) TL, LEAD TEMPERATURE (°C) Figure 9. Maximum Reverse Energy Figure
in „Load Dump Schutz im 12 Volt Bordnetz“ · Fahrzeugelektronik ·
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PDF
MR2535L.pdf
Response Figure 6. Steady State Thermal Resistance ) 100 10000 ( ) T TJ= 25°C ( N R TJ= 25°C R E R W C P E E S S E E1000 V V R R K K A A P P , , S S I R 10 P 100 1 10 100 1000 1 10 100 1000 t, TIME CONSTANT (mS) t, TIME CONSTANT (mS) Figure 7. Maximum Peak Reverse Current Figure 8. Maximum Peak Reverse Power 1000 2400 ( Y ) G (2000 E TJ= 25°C R N E E 100 W1600 Time Constant = 10 mS S P R E V S1200 E E R V A 10 R 800 E K Time Constant = 100 mS , A M P 400 R W 1 0 1 10 100 1000 25 50 75 100 125 150 t, TIME CONSTANT (mS) TL, LEAD TEMPERATURE (°C) Figure 9. Maximum Reverse Energy Figure
in „Unbekantes Bauteil im Wechselrichter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SMD_Sortiment02-Zusammenstellung.pdf
Minimelf SOD-80 40 ab Lager BZV55/5,6V Transistoren SMD 93 NPN 45V 0,5A 0,25W B:250-600 SOT23 120 ab Lager BC817/40SMD 94 PNP 45V 0,5A 0,25W B:250-600 SOT23 40 ab Lager BC807/40SMD 95 N-Kanal MOSFET N-LogL 20V 4,2A SOT23 20 ab Lager IRLML2502SMD 96 P-Kanal MOSFET P-LogL 20V 3,7A SOT23 20 ab Lager IRLML6402SMD
in „SMD Sammelbestellung, SMD Starterpack, SMD Grundausstattung, SMD Bauteile, Baugröße 0805 (zweite)“ · Markt ·
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INA101.pdf
to 1000 106 110 * * * * 100 105 dB INPUT NOISE Input Voltage Noise fB= 0.01Hz to 10Hz 0.8 * * * V, p-p Density, G = 1000 fO= 10Hz 18 * * * nV/√Hz fO= 100Hz 15 * * * nV/√Hz fO= 1kHz 13 * * * nV/√Hz Input Current Noise fB= 0.01Hz to 10Hz 50 * * * pA, p-p Density fO= 10Hz 0.8 * * * pA/√Hz fO= 100Hz 0.46 * * * pA/√Hz fO= 1kHz 0.35 * * * pA/√Hz DYNAMIC RESPONSE Small Signal, ±3dB Flatness G = 1 300 * * * kHz G = 10 140 * * * kHz G = 100 25 * * * kHz G = 1000 2.5 * * * kHz Small Signal, ±1% Flatness G = 1 20 *
in „Pulsmessung und Anzeige der Pulswelle auf einem LCD Display“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LT1170.pdf
Temperature Feedback Pin Clamp Voltage Switch “Off” Characteristics 11 500 1000 V = 0.6V 10 C 450 900 ) A 9 )400 800 ( 8 m –55°C A N E350 (700 VSUPPLY R 7 V SUPPLY= 60V A300 25°C N600 VSUPPLY = 40V U L R = 15V C 6 VSUPPLY = 3V V250 U500 VSUPPLY L K 150°C C = 3V V SUPPLY P 5 A200 C400 = 55V S 4 D I L E150
in „Bei Schaltregler nur Minimum- und Maximum-PowerSwitchStrom angegeben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf_1404.pdf
Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1404 12000 20 V GS = 0V, f = 1MHz ID= 95A C iss= Cgs + Cgd ,Cds SHORTED C rss= Cgd V VDS = 32V 10000 C oss= Cds + Cgd ( 16 V = 20V g DS ) l p 8000 C o e iss V c c 12 t u c 6000 o p o a - 8 , 4000 t C Coss G , S 4 2000 VG Crss FOR TEST CIRCUIT
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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TSL_235.pdf
OUTPUT FREQUENCY vs IRRADIANCE PHOTODIODE SPECTRAL RESPONSIVITY 1000 1 T = 25⋅C VDD = 5 V A λp= 670 nm 100 T = 25⋅C A 0.8 z t k i – 10 s c o n s 0.6 u e e 1 d F z t l 0.4 t m u 0.1 o O N – fO 0.2 0.01 0.001 0.001 0.01 0.1 1 10 100 1 k 0 300 400 500 600 700 800 900 1000 1100 E – Irradiance –
in „Beleuchtungszeit in LUx mit TSL235“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Fujitsu_Esprimo_p756-e90-de.pdf
Geräuschentwicklung ZugehörigeProzessorenfür Intel®Core™i76700 Geräuschpegel Hinweise/Beschreibungzum A-bewerteterSchalldruckpegelLwad(inB)/bezogenaufdenArbeitsplatzA-bewerteterSchalldruckpegelLpAm(in dB(A)) Standardgeräuschpegel Standardgeräuschpegelnach 3,4B/20dB(A)inunmittelbarerNähe;24dB(A)Bediener-Position
in „Speichererweiterung Rechner !“ · PC Hard- und Software ·
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papst_tachosignal.pdf
Elektrischer Anschluss l : l : e U o n n n n t g s Lüfter Kunde s g s g b u i x (+) Power UB h L d h H d h a l k UB Signaldaten T U B T US B T sp Z Is +UBS Typ V DC mA V DC mA V DC mA Ausgang 250 ≤0,4 ≤2 30 0 ≤30 2 Iink US 400 F ≤0,4 1 30 0 ≤30 ≤2 400 ≤0,4 1 30 0 ≤30 ≤2 (-) Power 412 J ≤0,4 2 30 0 ≤30 ≤4 414
in „Lüfter Tachosignal auswerten mit ATmega128“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tachosignal.pdf
Elektrischer Anschluss l : l : e U o n n n n t g s Lüfter Kunde s g s g b u i x (+) Power UB h L d h H d h a l k UB Signaldaten T U B T US B T sp Z Is +UBS Typ V DC mA V DC mA V DC mA Ausgang 250 ≤0,4 ≤2 30 0 ≤30 2 Iink US 400 F ≤0,4 1 30 0 ≤30 ≤2 400 ≤0,4 1 30 0 ≤30 ≤2 (-) Power 412 J ≤0,4 2 30 0 ≤30 ≤4 414
in „Lüftersignal messen und auf Drehzahl regeln“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl1404.pdf
Units Conditions D IS Continuous Source Current ––– ––– 160 MOSFET symbol (Body Diode) showing the A G ISM Pulsed Source Current ––– ––– 640 integral reverse (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 95A, GS= 0V trr Reverse Recovery Time ––– 63 94 ns TJ
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS75LX.pdf
DS75LX: Digital Thermometer and Thermostat with Extended Addressing Figure 8. 2-Wire Interface Timing O P P T P T S r S X N C t K 5 A a A A S D N ( 0 D 1 D ( D ) D D L 2 e ) t 7 D y t D B S 3 B a 4 t D D a M D a o D D m D D ( L f D ( D P P 6 7 ) P O P T D D L S S ) D X A C 7 K r L K 5 A S N C s A C 7 A C
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ILX551B_E_.pdf
1 R g - M s 2S l c 1S n C 1 N a G N 61 33D C V OUT 1 22 VDD2 C t 1 D 7 r 5 L NC 2 21 VDD2 G 1 n φ g NC VDD1 51D r e 3 20 D t u D 2 41D e p SHSW 4 19 GND V e o g - 8 D D 2 l n V φCLK 5 18 NC V 2 p e k p l a 7 N NC 6 17 GND C S C 1 C
in „AD Wandler ~ 2 Mhz“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ILX551B.PDF
2 D C 5 e s d M s V N 1 2S R o k a l D 1S a C 1 G C 6 D V OUT 1 22 VDD2 N 1 33D C r t K NC 2 1 21 VDD2 N 7 e 5 C G 1 e φ g NC 3 20 VDD1 51D r l D 0 41D a p V 2 e l SHSW 4 19 GND e h 2 e d 8 D D 2 l a V φCLK 5 18 NC V 2 p l c p C l a 7
in „Problem mit ILX551B (CCD-Sensor)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TNY264-266-268-1.pdf
Characteristics 1 1.1 3 1.2 2 - - 2 6 ) P 1.0 P e C y ° a ° c 5 l 2 e 20.8 o o u t V t e n e.0 r e0.6 o iz t l d a u a a m t m0.4 e r u o B No O N ( 0.2 0.9 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 Junction Temperature (°C
in „Unbekanntes Flyback IC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
U13843EU3V0AN00.pdf
240 x 320 640x240 800x600 Address Mono Color Color Color Color Gmode (VR41xx) AB000002 1 1 1 1 1 VCLK, MCLK BB0005FE 1A18 1A08 1A08 1A10 1000 Divider RV1xx) Panel Select AA800000 8 46 46 46 5 LCD Panel ControlAA800002 0 5 5
in „Controller für Graphik LCD“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LB084S02-TD01.pdf
characteristics provide an excellent flat display. Block Diagram I Gate Control Signal v r 8.4” TFT-LCD e a 1 (800xRGBx600) G N n P 0 C Power for LCD P Source Drive IC F Source Control Signal Gamma Reference Voltage Digital 6bit R,G,B 2pin LED Backlight Ass’y (CN2) General Features Active Screen Size 8.4 inches
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BYV26D.pdf
R RRMmax Tj= 165 °C; see Fig.16 rr reverse recovery time when switched from BYV26A to C IF= 0.5 A tR I = 1 A; − − 30 ns measured at R = 0.25 A; BYV26D and E see Fig.20 − − 75 ns BYV26F and G − − 150 ns Cd diode capacitance f = 1 MHz; R = 0 V; BYV26A to C see Figs 17 and 18 − 45 − pF
in „Wie Reverse Recovery Time messen?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Haussteuerung_V27.txt
Sub Ausgabe() If P(3) > 56 Then For I = 56 To 63 Z = I - 56 Sb_a.z = Sb(i + 1) Next Shiftout Dat , Clk , Sb_a , 1 , 8 End If If P(3) > 48 Then For I = 48 To 55 Z = I - 48 Sb_a.z = Sb(i + 1) Next Shiftout Dat , Clk , Sb_a
in „Mega644 reset“ · Mikrocontroller und Digitale Elektronik ·
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RFM12B.pdf
bit binarynumber<m3 : m0> SIGN = (mp) XORFSK out f0 mp=0 and FSK=0 mp=0 and FSK=1 or or Bits 2-0 (p2 to p0): Output power: mp=1 and FSK=1 mp=1 and FSK=0 p2 p1 p0 Relative Output Power [dB] 0 0 0 0 0 0 1 -2.5 Note: FSK represents the value of the actual da.a bit 0 1 0 -5 0 1 1 -7.5 1 0 0 -10 1 0 1 -
in „Verkaufe Hoperf - 10 rfm12b und 2 rfm12bp 868 MHz“ · Markt ·
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BC337_3.pdf
MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = 20 V − − 100 nA CBO E CB E = 0; CB = 20 V;jT = 150 °C − − 5 A EBO emitter cut-off current C = 0; EB = 5 V − − 100 nA h DC current gain I = 100 mA; V = 1 V; FE C CE BC337 see Figs 2, 3 and 4 100 − 600 BC337-16 100 − 250 BC337-25 160 − 400 BC337-40 250 − 600 DC current gain C = 500 mA; VCE= 1 V; 40 − − see Figs 2, 3 and 4 V collector-emitter saturation I = 500 mA; I = 50 mA − − 700 mV CEsat C B voltage V base-emitter voltage I = 500 mA; V = 1 V; note 1
in „Stromverstärkung mit Transistor; Arduino“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = 20 V − − 100 nA CBO E CB E = 0; CB = 20 V;jT = 150 °C − − 5 A EBO emitter cut-off current C = 0; EB = 5 V − − 100 nA h DC current gain I = 100 mA; V = 1 V; FE C CE BC337 see Figs 2, 3 and 4 100 − 600 BC337-16 100 − 250 BC337-25 160 − 400 BC337-40 250 − 600 DC current gain C = 500 mA; VCE= 1 V; 40 − − see Figs 2, 3 and 4 V collector-emitter saturation I = 500 mA; I = 50 mA − − 700 mV CEsat C B voltage V base-emitter voltage I = 500 mA; V = 1 V; note 1
in „Dimensionierung der Transistorschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BC337_3.pdf
MIN. TYP. MAX. UNIT I collector cut-off current I = 0; V = 20 V − − 100 nA CBO E CB E = 0; CB = 20 V;jT = 150 °C − − 5 A EBO emitter cut-off current C = 0; EB = 5 V − − 100 nA h DC current gain I = 100 mA; V = 1 V; FE C CE BC337 see Figs 2, 3 and 4 100 − 600 BC337-16 100 − 250 BC337-25 160 − 400 BC337-40 250 − 600 DC current gain C = 500 mA; VCE= 1 V; 40 − − see Figs 2, 3 and 4 V collector-emitter saturation I = 500 mA; I = 50 mA − − 700 mV CEsat C B voltage V base-emitter voltage I = 500 mA; V = 1 V; note 1
in „Transistor für Bewegungsmelder“ · Analoge Elektronik und Schaltungstechnik ·
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s81350hg.pdf
amount 600 amount 600 (mV) 400 (mV) 400 200 200 0 0 0 20 40 60 80 100 0 20 40 60 80 100 IOUT(mA) OUT(mA) 2. C Lependency 2.1 Overshoot S-81330HG S-81350HG 2500 3000 OUT=30mA, OUT=40mA, Ta=25 C 2500 Ta=25 C 2000
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NE592N14.pdf
CONDITIONS Min Typ Max UNIT AVOL Differential voltage gain, standard part 1 Gain 1 R L2k , V OUT=3V P-P 250 400 600 V/V Gain 22, 4 80 100 120 V/V RIN Input resistance Gain 11 4.0 k 2, 4 Gain 2 10 30 k 2 4 CIN Input capacitance Gain 2 2.0 pF I Input offset current 0.4 5.0 A OS BIAS Input bias current
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MN-RBXEB-01.pdf
Table A-13 LCD Header Pin-out Pin# LCD Header – J25 1 VDDSAFE 2 +12VSAFE 3 VEESAFE 4 NC 5 ENABLE BACKLIGHT 6 GROUND 7 M 8 DE 9 GROUND 10 LP 11 FLM 12 GROUND 13 SHIFT CLOCK 14 GROUND 15 P0 16 P1 17 GROUND 18
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Datei
PWMs.txt
0B01111111; } } else{ PORTD = PORTD & 0B01111111; } } void timer_init(void) { /*Fast PWM mit Timer0*/ TCCR0A |= ((1<<COM0A1) | (1<<COM0A0) | (1<<COM0B1) | (1<<COM0B0)); //Setzen bei übereinstimmung und löschen bei Top (Aus Tabelle 14-3 & 14-6) TCCR0A |= ((1<<WGM01) | (1<<WGM00)); //Mode 7 (Fast PWM) (Aus Tabelle
in „zwei if-Anweisungeg funktionieren nicht zusammen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLZ34.pdf
Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200
in „einzellzellen entladung für nimh akku“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlz34n.pdf
Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200
in „IRLZ34N anschliessen ?“ · Mikrocontroller und Digitale Elektronik ·
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lt1153.pdf
Supply Current Supply Current ON MOSFET Switch Gate Voltage 50 1000 24 V = 0V T = 25°C 45 TIN= 25°C 900 A 22 A ) 40 )800 20 ( 35 (700 18 T T ( R 30 R600 S 16 U 25 U500 – 14 C C A P 20 P400 V 12 U 15 U300 10 S S 10 200 8 5 100 6 0 0 4 0 5 10 15 20 0 5 10 15 20 0 5 10 15 20 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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ads122c04.pdf
pA/°C Gain = 1 to 128, VCM = AVDD / 2, –VREF / Gain ≤ IN≤ VREF / Gain 2 SYSTEM PERFORMANCE Resolution (no missing codes) 24 Bits Normal mode 20, 45, 90, 175, 330, 600, 1000 DR Data rate SPS Turbo mode
in „ads122C04 ADC 24Bit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLN540.pdf
symbol D ––– ––– 30 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 120 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, IS= 18A, VGS = 0V trr Reverse Recovery Time
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
symbol D ––– ––– 30 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 120 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, IS= 18A, VGS = 0V trr Reverse Recovery Time
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
max774-max776.pdf
= -15V / / VOUT = -5V 4 4 A VOUT = -12V A 2000 X 4.5 M 4.5 M M / V ) VOUT = -15V ) M E E A1800 A VOUT= -12V G ( BOOTSTRAPPED A L 4.0 L 4.0 N1600 V V VOUT= -24V R X P P U T 3.5 - 3.5 D1400 A R O 7 S V OUT= -5V T L 7 S 1200 3.0 3.0
in „[V] kleines Konvolut ältere DIL / DIP ICs (8€)“ · Markt ·
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Datei
main.c
#define LCD_D4 SBIT( P2OUT, 0 ) // Pollin C0802 lcd an P2 Pins 0 .. 5 #define LCD_DDR_D4 SBIT( P2DIR, 0 ) #define LCD_D5 SBIT( P2OUT, 1 ) #define LCD_DDR_D5 SBIT( P2DIR, 1 ) #define LCD_D6 SBIT( P2OUT, 2 ) #define LCD_DDR_D6 SBIT( P2DIR, 2 ) #define LCD_D7 SBIT( P2OUT, 3 ) #define LCD_DDR_D7 SBIT( P2DIR, 3 ) #define LCD_RS SBIT( P2OUT, 4 ) #define LCD_DDR_RS SBIT( P2DIR, 4 ) #define LCD_E0 SBIT( P2OUT, 5 ) #define LCD_DDR_E0 SBIT
in „MSP430 Launchpad lcd Ansteuerung, Vergleic. Atmel AVR“ · Projekte & Code ·
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PDF
HCF4511B.pdf
inputs are provided to test the display, shut off or intensity-modulate it, and store or HCF4511B is a BCD to 7 segment decoder driver made up of CMOS logic and n-p-n bipolar strobe a BCD code, respectively. Several different transistor output devices on a single monolithic signals may be multiplexed
in „BCD-7Segment Treiber für VFD Röhren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LT3465.pdf
V (V) IN 3465A G01 3465A G02 3465A G03 VFB vs V CTRL Open-Circuit Output Clamp Voltage Input Current in Output Open Circuit 5 250 TA= 25°C 35 T = 25°C TA= 25°C A 30 )200 V 4 V E ) ( A 25 m G L ( T150 O 20 N 3 O P R
in „s65 display stromversorgung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl3705n.pdf
symbol D ––– ––– 89 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 310 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 46A, VGS= 0V trr Reverse Recovery Time ––
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
symbol D ––– ––– 89 (Body Diode) A showing the ISM Pulsed Source Current integral reverse G ––– ––– 310 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 46A, VGS= 0V trr Reverse Recovery Time ––
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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embm2003.pdf
and the out- c putvoltagesignal(middle)aswellasthetotalshapedistortion l (TSD, bottom) evaluated as p 20 A e t t 10 2f ( ) − f (t − τ)dt o ∫t1 IN OUT V TSD = t2 ∫t fIN( )dt 0 1 102 103 10 4 10 5ƒ[Hz] +90 +60 [ +30 i S e 0 a P –30 –60 –90 (a) 10 2 103 10 4 10 5ƒ[Hz] 100 ] [ 80 o r t 60 D e a 40 h l o
in „High Voltage Amplifier“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
hmo3524-datasheeten.pdf
400 cd/m Logic channels: 16 x 1 GSa/s Display area for curves: Sampling rate (random): 50 GSa/s (n/a to logic channels) without menu 400 x 600 Pixel (8 x 12 div.) Memory: 2 x 2 MPts, 1 x 4 MPts [4 x 2 MPts, 2 x 4 MPts] with menu 400 x 500 Pixel (8 x 10 div.) Operation modes: Refresh, Average, Envelope
in „Hameg HMO3524“ · Markt ·
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Bild
Schaltplan eines HF-Verstärkers
60/40m 30/20m 17/15m 12/10m from PA C1 100nF GND K2 RT314A03 C5 120p C6 68p L1 1.2uH C7 620p L2 1.02uH C8 120p R2 150p K3 GSRL-1A-LN C11 100nF C3 100nF GND ULN2003A R5 C4 100nF 12VDC C13 100nF GND C15 150p C16 33p L3 700nH K4 GSRL-1A-LN C17 47p C18 150p L4 450nH C19 33p C20 68p C21 33p C22 33p K6 GSRL-1A-LN L7 240nH L8 250nH C31 33p C32 33p K7 GSRL-1A-LN C35 47p Conn_Coaxial GND R3 800m to PA J2 Conn_Coaxial C36 100nF GND R4 800m C30 100nF K5 GSRL-1A-LN Sheet: File:
in „Lowpass Filter-Board performt nicht gut“ · HF, Funk und Felder · · Schaltpläne
