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PDF
IRLU2905.pdf
ASSEMBLYSITE CODE Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRLR/U2905ZPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are
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PDF
Schaltplan.pdf
0 N 2 v M N M TO-92 TO-92 O R IRL2910 2 1 1. MR854 3 / 7M 9 R D c C 3 W RP D32B R 1 4 C N 5 G L A IRF5210 3 /13F 0 0 R 1 MR854 20 C 1 . BD139 MTP2P50E 20 15K BD140 MTP8P20 MJ21195 MJ21195 MJ21195 0 D 5 pi 1/4W R131B 1W0 ZD11B Q37B Q41B Q45B 9R D C R46C BD237 IRF720 5.0W 1N4745A 16V0 6910 6910 6910 5
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PDF
irl2203ns.pdf
15V D V =10V 10 20µs PULSE WIDTH R 0.0 GS 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T , Junction Temperature ( C) VGS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL2203NS/L 15 6000 VGS
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PDF
irlml2502.pdf
15V D V =4.5V 10 20µs PULSE WIDTH R 0.0 GS 2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature ( C) V GS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML2502 1200 10 V GS = 0V
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PDF
MOSFET-irfiz34v.pdf
DS = 50V D V =10V 20µs PULSE WIDTH R 0.0 GS 1 4 5 6 7 8 9 10 11 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 ° VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFIZ34V 2000 20 VGS =
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PDF
irlml6402pbf.pdf
20μs PULSE WIDTH D V =-4.5V 10 R 0.0 GS 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V , Gate-to-Source Voltage (V) T , Junction Temperature ( C) GS J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 www.irf.com © 2014 International Rectifier
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
PD - 9.1436B IRF7314 PRELIMINARY ® HEXFET Power MOSFET l GenerationVTechnology l Ultra Low On-Resistance S1 1 8 D1 V = -20V l Dual P-Channel MOSFET G1 2 7 D1 DSS l Surface Mount S2 3 6 D2 l Fully Avalanche Rated G2
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PDF
irf7314.pdf
PD - 9.1436B IRF7314 PRELIMINARY ® HEXFET Power MOSFET l GenerationVTechnology l Ultra Low On-Resistance S1 1 8 D1 V = -20V l Dual P-Channel MOSFET G1 2 7 D1 DSS l Surface Mount S2 3 6 D2 l Fully Avalanche Rated G2
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PDF
irlr2905_1_.pdf
10V 1 20µs PULSE WIDTH 0.0 GS A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS =
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PDF
irf7401.pdf
PULSE WIDTH R VGS = 4.5V 1 A 0.0 A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature(°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF7401 3000 10 V GS = 0V, f = 1MHz ID = 4.1A
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IRLU2905.pdf
10V 1 20µs PULSE WIDTH 0.0 GS A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS =
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PDF
irlz34n.pdf
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY A LOT CODE 9B1M INTERNATIONAL PART NUMBER RECTIFIER IRF1010 LOGO 9246 9B 1M DATE CODE ASSEMBLY (YYWW) LOT CODE YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California
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PDF
IOR__IRFR6215.pdf
= -50V D R VGS = -10V 1 20µs PULSE WIDTH 0.0 A 4 5 6 7 8 9 10 A -60 -40 -20 0 20 40 60 80 100 120 140 160 180 -VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFR/U6215 2000 20 V GS
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PDF
FB180SA10.pdf
V = 25V S DS D V =10V 1 20µs PULSE WIDTH R 0.0 GS 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature( C) V GS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 FB180SA10 20000 20 V GS = 0V
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PDF
irlml6401.pdf
20µs PULSE WIDTH RD VGS =-4.5V 0.1 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS =
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PDF
IRLML6401.pdf
20µs PULSE WIDTH RD VGS =-4.5V 0.1 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS =
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PDF
IRLML6401.pdf
20µs PULSE WIDTH RD VGS =-4.5V 0.1 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS =
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irlr3717.pdf
, , 1 ) D o I S VDS = 25V D 20µs PULSE WIDTH R 0.1 0.5 0 2 4 6 8 -60 -40 -20 020 40 60 80 100 120 140 160 180 T , Junction Temperature (°C) V GS, Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature www.irf.com 3 IRLR/U3717 100000 6.0 V
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
15V D V =4.5V 10 20μs PULSE WIDTH R 0.0 GS 2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature ( C) VGS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 www.irf.com © 2014 International Rectifier
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PDF
IRLML6401.pdf
0.5 , ,) -D n VDS = -12V ( D 20μs PULSE WIDTH R 0.0 VGS =-4.5V 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ° TJ, Junction Temperature ( C) -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 www.irf.com
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PDF
IRLML2502.pdf
15V D V =4.5V 10 20μs PULSE WIDTH R 0.0 GS 2.0 2.4 2.8 3.2 3.6 4.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature ( C) VGS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 www.irf.com © 2014 International Rectifier
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PDF
Amilo_Core_Erzeugung.pdf
PR142 +5V 7 4 PQ38 5 6 7 8 PQ34 5 6 7 8 PQ30 5 6 7 8 PL12 C 1 2 PVID3 VID4 PGOOD 107K_1 EN +5V GND IRF783D IRF783D IRF783D C 0.56uH_M104L + + C PVID2 32 24 6 5 Z2622 PR119 PC108 PC111 1 2 PVID1 VID3 PWM4 VCC +5V LGATE 2.2_0603 820u/2.5V_8*13 820u/2.5V_8*13 Z2625 PVID0 1 23 PR148 ISL6207 4 G 4 G 4 G OS-SEPC
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PDF
DS_IRFB7430.pdf
20 - Typical Stored Charge vs. dif/dt 260 F = 100A V = 34V 220 R TJ= 25°C TJ= 125°C ) C 180 ( R QR 140 100 60 0 200 400 600 800 1000 diF/dt (A/μs) Fig. 21 - Typical Stored Charge vs. di /dt f www.irf.com 7 IRFB7430PbF Driver Gate Drive P.W. D.U.T + P.W. Period D = Period V =10V* CircuitLayoutConsiderations
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PDF
182853-da-01-en-IRLR_8103V.pdf
15V S 20µs PULSE WIDTH R VGS =10V 10 0.0 2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( C)° Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR8103V 5000 V = 0V, f = 1MHz
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PDF
irlr120n.pdf
VDS = 50V R 20µs PULSE WIDTH V GS = 10V 0.1 A 0.0 A and 2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T , Junction Temperature (°C) V GS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U120N 800 15 VGS
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PDF
irlb3034pbf-Datasheet.pdf
t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source Voltage (V) DS QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRLB3034PbF 10000
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PDF
IRLB3034PbF.pdf
t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source Voltage (V) DS QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRLB3034PbF 10000
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PDF
IRLB3034.pdf
t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source Voltage (V) DS QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com 3 IRLB3034PbF 10000
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PDF
IRFI4212H-117.pdf
Parameter Typ. Max. Units R Junction-to-Case θC ––– 7.1 °C/W RθA Junction-to-Ambient (free air) ––– 65 www.irf.com 1 08/21/06 IRFI4212H-117P Electrical Characteristics @ T = 25JC (unless otherwise specified) g Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
––– 0.29 RθCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 www.irf.com 1 9/8/08 IRFP4668PbF Static @ T =J25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 200 ––– ––– V VGS = 0V, D = 250μA
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PDF
info-uiir2156.pdf
during Waveform 1. Lamp filament voltage during preheat a failure-to-strike lamp fault condition. www.irf.com 21 IR2156 (S)&(PbF) Case outline 01-6010 14-Lead PDIP 01-3002 (MS-001AC) 01-6019 14-Lead SOIC (narrow body) 01-3063 (MS-012AB) 22 www.irf.com ( )&(PbF) IR2156 S Bill Of Materials Schematic: Typical
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irf740pbf.pdf
IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available R (Ω) V = 10 V 0.55 • Repetitive Avalanche Rated DS(on) GS RoHS* Qg(Max.) (nC) 63 • Fast
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PDF
IRLN540.pdf
LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAEXAMPLE : THIS IS AN IRF IRF1010 10 WITWITH ASSEMBLY A A LOTLOT CODE 9B1M INTINTERNATIONAL PARPART NUMBER RECRECTIFIER IRFIRF0 10 LOGLOGO 9249246 9B 9B 1M 1M DATDATE CODE ASSEMBLY ASSEMBLY (YY(YY W) LOTLOT COCODE YY YY = YEAR
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PDF
IRLZ34.pdf
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY A LOT CODE 9B1M INTERNATIONAL PART NUMBER RECTIFIER IRF1010 LOGO 9246 9B 1M DATE CODE ASSEMBLY (YYWW) LOT CODE YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California
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PDF
IRL540N.pdf
LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAEXAMPLE : THIS IS AN IRF IRF1010 10 WITWITH ASSEMBLY A A LOTLOT CODE 9B1M INTINTERNATIONAL PARPART NUMBER RECRECTIFIER IRFIRF0 10 LOGLOGO 9249246 9B 9B 1M 1M DATDATE CODE ASSEMBLY ASSEMBLY (YY(YY W) LOTLOT COCODE YY YY = YEAR
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PDF
DS_IRLZ44N-IR.pdf
▯ 1 20µs PULSE WIDTH▯ A 0.0 GS A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44NPbF 2800 15 V GS = 0V, f = 1MHz
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PDF
IRLZ44N-IR_Reichelt.pdf
▯ 1 20µs PULSE WIDTH▯ A 0.0 GS A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ44NPbF 2800 15 V GS = 0V, f = 1MHz
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PDF
IR2130.pdf
(Hz) Figure 51. IR2130/IR2132 T vs. Frequency JIRF820) Figure 52. IR2130/IR2132 T J vs. Frequency (IRF830) R = 33 ,ΩV = 15V R = 20 ,ΩV = 15V GATE CC GATE CC 100 140 480V 120 320V ) 80 ) ( ° 100 r r a a p p m 60 480V m 80 160V T T t 320V t n n 60 J J 0V 40 160V 40 0V 20 20 1E+2 1E+3 1E+4 1E+5 1E+2 1E+
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PDF
DACled.pdf
1 2 3 4 5 6 A A VCC 8 + VCC VU1C -OPA140 V 4 1 D1 LY CP7P-JRJT-1 B 2 B GND VCC U1B OPA140 R1 5 100 2 IN_Analog + 7 1 Q1 R4 6 - IRF540N 10k C1 R2 3 4.7n 10k R3 3 GND C C Sheet: / D File: DACled.sch D Title: DACled Size: A4 Date: 2021-12-15
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PDF
RequiresAcrobat6-5.pdf
LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-220AB EXAEXAMPLE : THIS IS AN IRF IRF1010 10 WITWITH ASSEMBLY A A LOTLOT CODE 9B1M INTINTERNATIONAL PARPART NUMBER RECRECTIFIER IRFIRF0 10 LOGLOGO 9249246 9B 9B 1M 1M DATDATE CODE ASSEMBLY ASSEMBLY (YY(YY W) LOTLOT COCODE YY YY = YEAR
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Datei
Devices.txt
MA04-1 14 L-EU0204/5 14 IRFP240 14 CPOL-EU153CLV-0405 14 C1206 13 NC 13 LEDCHIP-LED0805 13 JP1Q 13 IRF540 13 HD-H103 13 ELC-5 13 CRYSTALHC49U70 13 CPOL-EUSMCC 13 CPOL-EUB45181A 13 B-DIL 13 1N4446 12 TRIM_EU-B25P 12 TLC5940-PWPOTV 12 SJ 12 RESEU-18 12 R 12 C-2.5-5/2 12 BD140 12 AMPAMP 12 7-SEG_SA10-21
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Control_S03_Sch_4011.pdf
1 PCM+BMS 4s LiFePo4 12,8V 30A 10-14,4V 6mmÖse, 6qmmKabel sw S3 GND IRF3205 55V 110A 8mR 3247pF Mut1-5 8BMS LiFePo4 3,2/12,8V 20uA 30/70A 2,0/2,25V 3,6/3,75V Balance 3,6V@45mA 56x48x4mmBoard with Cable Makita P75N02LDG 25V 5mR 75/50A 5nF niko-sem12c8 HY2112C IRF1404PBF
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Stochino_Power_Amp_300V_us_power.pdf
279 AUDIO DESIGN +48V 55V 33R c5 48p 5R 1k5 100R a a T23 60R 2N2907A T r T '6 2N2907A 2N5551 1k5 T20 IRF640 Tr 1N4448HV Tr'5 4 A 2N5551 2N5401 (x2) c, Tr'9 48p C so IRF640 + DZ, 2211 33V 1W 50R 50R 22R OR47 OR47 V in 220n 3W 3W C VF 3k3 V0' 200R 1n 100R 50R 50R OR47 OR47 1k3 3W 3W DZ 2 33V c2 T 1W 2' 48p IRF9640 0 so B Tr1 Tr Tr6 7 22 2N5551 2N5401 IRF9640 Tr2 Trs 2N2222A 60R Tr 2N5401 s 2N2222A 100R a a c6 5R 5R 48p -55V�- L- -8V Fig. 3a), Detailed circuit diagram of the final Some Spice simulation results
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PDF
Vergleichsliste.pdf
BUY71 ECG63 MRF911 2SC2369 BFQ85 ECG64 2SC2369 MRF901 ECG65 BFR90 BFR91 BFR92 ECG66 BUZ71A RCA9212A IRF533 532 BUZ10A IRF530 ECG67 IRF612 613 VNO340N5 BUZ60 BUZ76A 2SK319 ECG68 MJ15025 MJ15023 2N6031 ECG69 2SC1393 2SC2026 MPSH10 ECG71 2N3599 2N3598 2N3266 ECG72 2N3625 2N5731 2N5008 ECG73 2N3622 2N5049
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PDF
embm2003.pdf
1K 6 R 0 C 1 R T5 T12 IRF640 2K2 4 5 1 F F R29 INPUT 0 C0 6E 8 2K2 7 3 OUTPUT J2 C1 1 4 C2 RBD139 BC337 . R J1 µ 3 1 0 K 3 . C E 2 4.7 µF 1 R–15V 0 BC327 2 3 C4 0 P R30 0 R K * 3 F 3 2 2K2 0 R 22pF GND 6 1 0 1 4T13 IRF9640 1
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Datei
All.txt
Enhancement MOSFET 2 Q7 BD140 BD140 TO126 PNP Transistor 2 Q7 BC547 BC547 TO92 NPN Transistor 2 Q6 IRF540 IRF540 TO220BV HEXFET Power MOSFET 2 Q6 IRF350 IRF350 TO3 N-Channel Enhancement MOSFET 2 Q6 16MHz CRYTALHC49S HC49/S CRYSTAL
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behringer_nu3000.pdf
3904 A-IN 3 C139 C131 C121 3 T12 10k 1 R179 R157 3 15 ES1D C65 C99 OUT_B 10k 4580 4k7 2k2 IN VB R76 IRFS4227 10u 2 6E8 1u/250 56p 10u A 1n 1n C150 0 9 C138 C98 OUT_A C45 R54 0 2 R 100p 6 5 47p R124 1000/6.3 1 100p 1 3 6 VREF HO 14 9 D46 R 3k92 R120 k C97 ES1D +15V 3 33p H3 T6 10k 20k L4 3904 C38 R176 R190
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PDF
irlz34npbf.pdf
DS R 0.1 20µs PULSE WIDTH▯ 0.0 V GS = 10V▯ A 2 3 4 5 6 7 8 9 10A -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz
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DPA.pdf
Operating DC Input Number Overvoltage Voltage Sensitivity (V ) (V ) (Turn-On) PEAK RMS DPA4111 400 20-140 10mA DPA4119 400 20-140 3.5V DPA6111 600 20-280 10mA DPA6119 600 20-280 3.5V (ChipSwitch and HEXFET are trademarks of International Rectifier) fi Series DPA ChipSwitch DIP Relay Electrical Specifications
in „Daten(blatt) von SSR gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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IR2117_Mosfet_Driver.pdf
Switching Time Test Circuit Figure 4. Switching Time Waveform Definition 7 IR2117/IR2118 320V 320V 140V 150 150 140V 125 125 C C e100 e100 t t 10V e e m 75 m 75 T 10V T o o n 50 n 50 J J 25 25 0 0 1E+2 1E+3 1E+4 1E+5 1E+6 1E+2 1E+3 1E+4 1E+5 1E+6 Frequency (Hz) Frequency (Hz) Figure 5. IR2117/IR2118
in „MOSFET Ansteuerung“ · Analoge Elektronik und Schaltungstechnik ·