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Datei
DS1302_V12.bas
************************************************************************ '************************ DS1302 RealTimeClock ********************************* '******************************************************************************* '****************************** Allgemein ************************
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BSS169.pdf
BSS169 SIPMOS Small-Signal-Transistor Product Summary Features V 100 V DS • N-channel R DS(on),max 12 Ω • Depletion mode IDss,min 0.09 A • dv/dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS169 SOT-23 Q67000-S322 E6327: 3000 pcs/reel SFs Maximum
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LM710.PDF
Characteristics Transfer Function Voltage Gain Voltage Gain DS010410-10 DS010410-11 DS010410-12 Input Bias Current Input Offset Current Supply Current DS010410-13 DS010410-14 DS010410-15 Response Time for Response Time for Common Mode Pulse Various Input Overdrives Various Input Overdrives Response DS010410-18 DS010410-16 DS010410-17 5 www.national.com PrintDate=1997/05/16 PrintTime=10:46:12 7730 ds010410 Rev. No. 1 Proof 5 Typical Performance Characteristics (Continued) Output Voltage Level Output
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lm317-1.pdf
Regulator with Improved Ripple Rejection High Stability 10V Regulator DS009063-10 †Solid tantalum *Discharges C1 if output is shorted to ground DS009063-11 High Current Adjustable Regulator DS009063-12 ‡Optional — improves ripple rejection †Solid tantalum *Minimum load current
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LM317__NAT.pdf
Regulator with Improved Ripple Rejection High Stability 10V Regulator DS009063-10 †Solid tantalum *Discharges C1 if output is shorted to ground DS009063-11 High Current Adjustable Regulator DS009063-12 ‡Optional — improves ripple rejection †Solid tantalum *Minimum load current
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ATTINY_3216_DB.pdf
table for details. ©2020 Microchip Technology Inc. Complete Datasheet DS40002205A-page 120 ATtiny3216/3217 EVSYS - Event System 14.5.5 Asynchronous User Channel n Input Selection Name: ASYNCUSERn Offset: 0x12 + n*0x01 [n=0..12] Reset: 0x00 Property: - Bit 7 6 5 4 3 2 1 0
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CCP_Tricks.pdf
Notice that the RMS and maximum voltage are functions of the duty cycle (DC) in the following Figure 12-3. FIGURE 12-3: DUTY CYCLE RELATION TO V RMS DC = 10% V MAX VRMS T VRMS DC = 80% DS41214A-page 32 © 2003 Microchip Technology Inc. Tips ‘n Tricks Equation 12:1 shows the relation betweeRMS and VMAX .
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1789204.pdf
(V) Temperature ( C) FIGURE 2-9: Quiescent Current vs. FIGURE 2-12: Input Threshold vs. Supply Voltage. Temperature. Note: Unless otherwise indicated, T = +25°C with 4.5V V 18V. A DD DS20002052C-page 6 2007-2013 Microchip Technology Inc. MCP1401/02 150 80 VDD=
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Datei
PLC-LOX.txt
/* UDP syntax: signals: DS18B20 1wire sensor packet: rail1 1w 2864fc3008082 25.44 DS2438 1wire sensor packet: rail1 1w 2612c3102004f 25.44 1.23 0.12 digital input state: rail1 di1 1 analog input state: rail1 ai1 250 commands:
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
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datasheet.pdf
5.0 6.0 V 8.0 0 2 4 6 8 10 12 14 16 A 20 V I DS D Typ. transfer characteristics I = f (V ) Typ. forward transconductance g = f (I ) D GS fs D parameter: t = 80 µs parameter: t = 80 µs, p p V DS ≥ 2 x I D R DS(on)max V DS ≥2 x I D R DS(on)max 24 6.0 A S 20 5.0 I g D 18 fs 4.5 16 4.0 14 3.5 12 3.0 10 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 A 22 V I GS D Semiconductor Group 6 07/96 BUZ 72 Gate threshold voltage
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CW6626-Datasheet-DS6626V1.1.pdf
CW6626 CW6624 Doc.NO:DS6626 Page: 1 / 27 Ver 1.1 Apr/12/2008 Bluetooth 2.1 Single Chip for HCI Solution z Support high-speed UART baud rate of up to 3Mps, General Description USB 2.0 full-speed compliant interface for HCI transport
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Datenblatt_PIC12F1822.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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Datenblatt_PIC12F1822.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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12F1822_1823.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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12F1822_1823.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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12F1822_1823.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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PIC12FLF1822PIC16FLF1823.pdf
functions can be assigned to one of two pin locations via software. See APFCON register (Register 12-1). 2010 Microchip Technology Inc. Preliminary DS41413B-page 17 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 18 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2.0 ENHANCED
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MCP4821-MCP4822.pdf
Value at POR 1 = bit is set 0 = bit is cleared x = bit is unknown © 2005 Microchip Technology Inc. DS21953A-page 17 MCP4821/MCP4822 CS 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 (Mode 1,1) SCK (Mode 0,0) config bits 12 data bits SDI A/B — GA SHDN D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 LDAC VOUT FIGURE 5-1:
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DS1302.pdf
§ Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial
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DS1302.pdf
§ Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial
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BSS139.pdf
drain current IDSS V GS=0 V, V DS=10 V 30 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, ID=15 mA - 12.5 30 Ω V GS=10 V,I D0.1 mA - 7.8 14 |V DS|>2|D |RDS(on)max Transconductance gfs ID=0.08 A 0.060 0.13 - S Threshold voltage
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GU256X16-333A_1.pdf
OFF OFF 0 1 1 1 #8 ON OFF OFF ON 0 1 1 0 #9 ON OFF ON OFF 0 1 0 1 #10 ONFFON0 1 0 #11 OOONOF 0 0 1 #12 ON ON OFF ON 0 0 1 0 #13 ON ON ON OFF 0 0 0 1 #14 ON ON ON ON 0 0 0 0 #15 Example of module address setting. DS3 DS2 DS1 DS0 VFD1 1 1 1 1 Module Address#0 Module Address#1 VFD1 1 1 1 0 VFD1 1 1 0 1 Module
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PDF
GU256X16-333A_1.pdf
OFF OFF 0 1 1 1 #8 ON OFF OFF ON 0 1 1 0 #9 ON OFF ON OFF 0 1 0 1 #10 ONFFON0 1 0 #11 OOONOF 0 0 1 #12 ON ON OFF ON 0 0 1 0 #13 ON ON ON OFF 0 0 0 1 #14 ON ON ON ON 0 0 0 0 #15 Example of module address setting. DS3 DS2 DS1 DS0 VFD1 1 1 1 1 Module Address#0 Module Address#1 VFD1 1 1 1 0 VFD1 1 1 0 1 Module
in „{V] Verkaufe MEGA VFD Grafikdisplay von Noritake“ · Markt ·
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LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
power light sources represented here are IEC825 class 2 for eye safety. LUXEON K2 Emitter Datasheet DS51 (5/06) 5 Electrical Characteristics Electrical Characteristics at 350mA for LUXEON K2, Part Numbers LXK2 xx12 xxx, Junction Temperature, T = 25ºC J Table 3. Typical Temperature Typical Typical Coefficient
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PSMN4R8-100PSE.pdf
characteristics RDSon drain-source on-state VGS = 10 V; D = 25 A; j = 25 °C; - 4.3 5 mΩ resistance Fig. 12 Dynamic characteristics Q GD gate-drain charge VGS = 10 V; D = 25 A; DS = 50 V; - 59 83 nC Fig. 14; Fig. 15 Q G(tot) total gate charge - 196 278 nC Nexperia PSMN4R8-100PSE N-channel 100 V 5 mΩ standard
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DS2450_ADU.pdf
an offset time of maximum 160 µs every time the convert command is issued. For four channels with 12-bit resolution each, as an example, the convert command will not take more than 4x12x80 µs plus 160 µs offset, which totals 4 ms. If the DS2450 gets its power through the V CC pin, the bus master may
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SUM55P06-19L.pdf
0.03 n s c R VGS = 4.5 V n n r 40 - 0.02 V GS= 10 V T ) s ( g D 20 r 0.01 0 0.00 0 6 12 18 24 30 36 42 48 54 60 0 20 40 60 80 100 ID- Drain Current (A) D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 5000 20 4500 ) V = 30 V 4000 ( 16 DS C iss e ID= 55 A ) 3500 t p o ( V c 3000 r 12 t o c 2500 - p t C 2000 t 8 - a C 1500 - S 1000 Coss G 4 Crss V 500 0 0 0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160 V DS- Drain-to-Source Voltage (V) Qg- Total Gate Charge (nC) Capacitance Gate
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irl7833.pdf
Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL7833/S/L 100000 12.0 VGS = 0V, f = 1 MHZ I = 30A Ciss = gs + gd, CdsSHORTED D C = C ) 10.0 rss gd ( V = 24V Coss = ds + gd g DS ) t V DS= 15V p0000 o 8.0 e V n Ciss r i u 6.0 a S a C oss t C e C1000 a 4.0 C rss , S VG
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MB3775.pdf
9 − + − + − + − + 220 μF 220 μF 220 μF 220 μF + V02- V 01 GND V02+ V01 (−12 V) (−5 V) (+5 V) (+12 V) DS04-27204-6E 11 MB3775 ■ HOW TO SET OUTPUT VOLTAGE The output voltage is set using the connection shown in Fig. 5 and 6. The error amplifiers are supplied to the internal reference
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1-buz171.pdf
-7.0 -7-8.0 -9.0 -10.0 -20.0 0 a 0.0 0 -2 -4 -6 -8 -10 -12 -14 -16 V -19 0 -2 -4 -6 -8 -10 -12 A -16 V DS ID Typ. transfer characteristics I = f (V D GS ) Typ. forward transconductance g = f fs (ID) parameter: t = 80 µs parameter: t = 80 µs, p p V ≥ 2 x I x R V ≥2 x I x R DS D DS(on)max DS D DS(on)max -15 4.0 A S 3.2 ID -12 g fs -11 2.8 -10 -9 2.4 -8 2.0 -7 -6 1.6 -5 1.2 -4 -3 0.8 -2 0.4 -1 0 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 A -15 V GS D Semiconductor
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PDF
IRF7822.pdf
5.0 6.5 mΩ V GS= 4.5V, D = 15AR on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250µA GS(th) DS GS D Drain-Source Leakage DSS 30 V DS= 24V, VGS= 0 Current Current* 150 µA V DS= 24V, VGS= 0, Tj = 100°C Gate-Source Leakage GSS ±100 nA V GS= ±12V Current Total Gate Chg Cont FET QG 44 60 V GS.0V, I D15A, V =DSV Total Gate Chg Sync FET QG 38 V GS= 5.0V, VDS 100mV Pre-Vth QGS1 13 V DS= 16V, D = 15A Gate-Source Charge Post-Vth QGS2 3.0 nC Gate-Source Charge Gate to Drain Charge QGD 9.0 Switch Chg(Q gs2 Q gd Qsw 12 Output Charge Qoss 27 V DS= 16V, VGS= 0 Gate Resistance R 1.5 Ω G Turn-on
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MCP79521.pdf
1: Grey areas are unimplemented. 2: The 12/24its in the ALMxHOUR registers are read-only and reflect the value of the 12/24 bit in the RTCHOUR register. 2012-2023 Microchip Technology Inc. anditssubsidiaries DS20002300E-page 13 MCP7951X/MCP7952X
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PDF
670135-DS01-1.pdf
Current IGSS V GS = ±20V - - ±100 nA On Resistance (Note 2) rDS(ON) ID= 7.9A, VGS = 10V (Figures 8, 9) - 0.3 0.4 Ω Forward Transconductance (Note 2) g fs V DS ≥ 50V, D = 7.9A (Figure 12) 9.3 13.8 - S Turn-On Delay Time t V = 250V, I ≈ 14A, V = 10V, R = 6.1Ω, - 16
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DCL10_ds593.pdf
CERUSBIED Made in U.S.A. VREFVREFVREF ---- TTDI / DIN / MOSI 1.5 < VREF < 5.0 VDC TMS / PROG / SS ADAPTER DS593_11_021908 Figure 11: Flying Wire Adaptor (Top) with Wires DS593 (v1.2.1) March 17, 2011 www.xilinx.com 12 Platform Cable USB II X-Ref Target - Figure 12 Adapter Circuit Board DS593_12_012508 Figure
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PDF
AN1152_Achieving_Higher_ADC_Resolution.pdf
scheme, which adds additional bits of accuracy to the voltage range and, consequently, the lower the 12-bit ADC conversion in a dsPIC fiDSC, is explored in quantization noise, as shown in Equation 1. this application note. EQUATION 1: Voltage Resolution= 1 Least Significant bit (LSb) va=u-ull-----------
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Spartan-3A_FPGA_Family.pdf
IOSTANDARD is available and has equivalent characteristics but no PCI-X IP is supported. 8 8 –8 (4) 12 12 –12 (4) 16 16 –16 (3) LVCMOS15 2 2 –2 0.4 V CCO– 0.4 4 4 –4 6 6 –6 8(4) 8 –8 12(4) 12 –12 LVCMOS12 (3) 2 2 –2 0.4 V – 0.4 CCO 4(4) 4 –4 6(4) 6 –6 DS529-3 (v2.0) August 19, 2010 www.xilinx.com 17 DC
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Datei
shugart.txt
sided/FD2S Drive 22 RDY Drive 24 Sector/NC +5 V 1,3,5 1 POW4 GND 15,17,19 2 POW3 GND 23,25 3 POW2 +12 V 4 POW1 FDC 2 DENSEL 2 REDWC 5 LSD 2 DENSEL/REDWC FDC 4 INU/HLD 4 NC 16 INU/DLOCK FDC 6 DS3/4 6 NC 32 SEL4 Drive 2 IDX 8 IDX 8 INDEX 6 IDX 20 IDX FDC 4 DRSEL 10 DS0/1 10 MOTEA 7 MOT1 26 SEL1 FDC 12 DS1/2 12 DRVSB 8 DS2 28 SEL2 FDC 14 DS2/3 14 DRVSA 9 DS1 30 SEL3 FDC 10 MOTon 16 MOTON 16 MOTEB 10 MOT2 18 LSD/HDL FDC 12 DIR 18 DIREC 18 DIR 11 DIR 34 DIR FDC 14 STP 20 STEP 20 STEP 12 STP 36 STEP FDC
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PDF
IPB026N06N.pdf
pulse 0.1 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 V [V] t [s] DS p Rev.2.2 page 4 2012-12-20 IPB026N06N 5 Typ. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V GS parameter: V GS 400 8 10
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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irlml6344pbf.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_32_MX_110_F_016_-_I-SO__11-2-3___SO_28_.pdf
7. “Resets” (DS60001118) • Section 8. “Interrupt Controller” (DS60001108) • Section 9. “Watchdog Timer and Power-up Timer” (DS60001114) • Section 10. “Power-Saving Features” (DS60001130) • Section 12. “I/O Ports” (DS60001120
in „pic32 flash und i/o speed“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_32M_X_220_F_032_B-50I-SP_____DIP_28_.pdf
7. “Resets” (DS60001118) • Section 8. “Interrupt Controller” (DS60001108) • Section 9. “Watchdog Timer and Power-up Timer” (DS60001114) • Section 10. “Power-Saving Features” (DS60001130) • Section 12. “I/O Ports” (DS60001120
in „PIC32MX flash access time“ · Mikrocontroller und Digitale Elektronik ·
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MCP794xx.pdf
Inc. DS20005009G-page 41 MCP79400/MCP79401/MCP79402 FIGURE 6-12: EUI-64 NODE ADDRESS PHYSICAL MEMORY MAP EXAMPLE (MCP79402) 24-bit Organizationally 40-bit Extension Description Unique Identifier Identifier Data 00h 04h A3h 12h 34h 56h 78h 90h Array Address F0h F7h ™ Corresponding EUI-64 Node Address: 00-04-A3-12-34-56-78-90 2011-2018 Microchip Technology Inc. DS20005009G-page 42 MCP79400/MCP79401/MCP79402 7.0 PACKAGING
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM317_Datenblatt.pdf
R1 Figure 10. 5 V electronic shut-down regulator Input Output Adjust DS0433 - Rev 22 page 11/34 LM217, LM317 Application information Figure 11. Digitally selected outputs Input Output Adjust (R2sets maximum V ) O Figure 12. Battery charger (12 V) Output Input Adjust * RSsets
in „12V Membranpumpe (KNF) läuft nur mit halber Leistung bei interner 3V-Steuerspannung (LM317)“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
wc.txt
endif; if my_hour < 5 then ptn2led(c_nachts); elsif my_hour > 8 then if my_hour < 11 then ptn2led(c_vor12); ptn2led(c_mittag); elsif my_hour = 12 then ptn2led(c_mittag); elsif my_hour < 19 then ptn2led(c_nach12); ptn2led(c_mittag); endif; endif; end; {-----------------------------------------------------
in „Wieder mal DCF“ · Mikrocontroller und Digitale Elektronik ·
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Datei
wordclock_mega888.PAS
ptn2led(c_uhr); endif; if my_hour < 5 then ptn2led(c_nachts); elsif my_hour > 8 then if my_hour < 12 then ptn2led(c_vor12); ptn2led(c_mittag); elsif my_hour < 19 then ptn2led(c_nach12); ptn2led(c_mittag); endif; endif; end; {--------------------------------------------------------------} { Main Program
in „Wer kennt sich aus mit Pascal?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PHC2300_3_1_.pdf
I = −115 mA − 674 − pC GS DS D Switching times on turn-on time N-channel VGS = 0 to 10 V;DD = 50 V; − 7 12 ns ID= 170 mA P-channel VGS = 0 to −10 V;DD= −50 V; − 4 10 ns ID= −115 mA off turn-off time N-channel VGS = 10 to 0 VDDV=
in „[S] PHC2300 komplementär Mosfet SO8 / Bestellung Farnell/HBE“ · Markt ·
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PDF
CS42L51_F3.pdf
from +12.0 to -10.5 dB. 64 DS679F3 CS42L51 Bass Gain Level (BASS[3:0]) Default: 1000 dB (No Bass Gain) Binary Code Gain Setting 0000 +12.0 dB ··· ··· 0111 +1.5 dB 1000 0 dB 1001 -1.5 dB ··· ··· 1111 -10.5 dB
in „STM32H7B3I-DK - Soundausgabe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFI4212H-117.pdf
DIGITAL AUDIO MOSFET PD-97249A IRFI4212H-117P Features Key Parameters g Integrated half-bridge package V DS 100 V Reduces the part count by half R DS(ON)typ. @ 10V 58 m : Facilitates better PCB layout Q gyp. 12 nC Key parameters optimized for Class-D Q sw typ. 6.9 nC audio amplifier applications R typ. G(int
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