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NECCS04393-1.pdf
) tSIK2 100 ns SI0 hold time (from SCK0↑) tKSI2 400 ns Note SO0 output delay time tKSO2 C = 100 pF 300 ns from SCK0↓ SCK0 rise, fall time R2, 1000 ns tF2 Note C is the load capacitance of SO0 output line. 42 Data Sheet U11776EJ2V1DS µPD78P0308, 78P0308Y (iii) SBI mode (SCK0...internal clock output):
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PDF
DS_UJ3N120070K3S-1530204.pdf
Static Parameter Symbol Test Conditions Value Units Min Typ Max Drain-source breakdown voltage BV DS V GS- 20V, ID=1mA 1200 V V DS1200V, 5 30 VGS -20V, T J 25°C Total drain leakage current D mA V DS1200V, 18 V GS-20V, T J 175°C V =-20V, T=25°C 5 50 Total gate leakage current G GS j mA V GS20V, T=j75
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PDF
MCP2021.pdf
0.5 125 C 0 0 0 100 200 300 0 100 REG(mA) 200 300 IRE(mA) DS22298A-page 8 2012 Microchip Technology Inc. MCP2021A/2A FIGURE 1-6: VOLTAGE REGULATOR OUTPUT ON POWER-ON RESET VBB V Minimum V BBto maintain regulation 8 6 VON V OFF
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PDF
GWM120-0075P3.pdf
V; TVJ 25°C 1 µA with optimized heat transfer TVJ 125°C 0.1 mA I V = ±20 V; V = 0 V 0.2 µA GSS GS DS Q 91 nC g Q gs VGS 10 V; V DS= 60 V; ID= 25 A 19 nC Q gd 28 nC td(on) 36 ns t V = 10 V; V = 30 V; 56 ns r GS DS td(off) D = 25 A; RG= 10 Ω 130 ns tf 50 ns VF (diode) F = 60 A; GS= 0 V 0.9 1.4 V trr (
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PDF
uP1542-DS-F00A0.pdf
does V = V IN OCP OCS not present initially. V IOCP = OCP (A) RDS(ON) For example: IfVOCP=375mV,andR DS(ON)10mΩ,theI OCPwillbe37.5A. VIN5V/Div) IfVOCP=225mV,andR DS(ON)10mΩ,theI OCPwillbe22.5A. VOUT(1V/Div) Over Voltage and Under Voltage Protection TheuP1542assertsovervoltageprotectionifthefeedback voltageV
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24LC32A.pdf
only during SCL low. Changes during SCL high are reserved for indicating Start and Stop conditions. DS21713D-page 12 2003 Microchip Technology Inc. 24AA32A/24LC32A 8.0 PACKAGING INFORMATION 8.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 24LC32A T/XXXNNN I/P13F YYWW 0327 8-Lead
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PDF
ZXLD1366.pdf
40 50 60 SUPPLY VOLTAGE (V) Duty Cycle, L = 220µH ZXLD1366 14 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Typical Operating Conditions (cont.) 1200 800 R = 300mΩ 1000 700 R = 200mΩ )600 ) A m800 ( ( T500 N
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2097320.pdf
40 50 60 SUPPLY VOLTAGE (V) Duty Cycle, L = 220µH ZXLD1366 14 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Typical Operating Conditions (cont.) 1200 800 R = 300mΩ 1000 700 R = 200mΩ )600 ) A m800 ( ( T500 N
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PDF
20002019c.pdf
connected for proper operation. 2: Exposed pad of the DFN package is electrically isolated; see Table 3-1. DS20002019C-page 2 2006-2016 Microchip Technology Inc. MCP1406/07 Functional Block Diagram (1) VDD Inverting 130 µA 300 mV Output Output Non-Inverting Input Effective 4.7V MCP1406 Inverting Input C =
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PDF
datasheet.pdf
On-State Resistance (VGS = 10V, 0.5D[Cont.] 0.011 Ohms Zero Gate Voltage Drain Current (= V , V = 0V) I DS DSS GS 250 A DSS Zero Gate Voltage Drain Current (= 0.8 V , V = 0V, T = 125°C) 1000 DS DSS GS C GSS Gate-Source Leakage Current (GS= ±30V, VDS = 0V) ±100 nA VGS(th) Gate Threshold Voltage DS = VGS, D
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PDF
BUK962R5-60E_NMOS.pdf
voltage I = 250 µA; V = 0 V; T = -55 °C 54 - - V D GS j V GS(th) gate-source threshold D = 1 mA; V DS = V GS; Tj= 25 °C; 1.4 1.7 2.1 V voltage Fig. 9; Fig. 10 I = 1 mA; V = V ; T = -55 °C; - - 2.45 V D DS GS j Fig. 9 D = 1 mA; V DS = V GS; Tj= 175 °C; 0.5 - - V Fig. 9 IDSS drain leakage current VDS =
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91201.pdf
b. VDD = 25 V, startinJ T = 25 °C, L = 69 gH, R = 2ASΩ= 130 A (see fig. 12). c. I ≤ 130 A, dI/dt ≤ 300 A/μs, ≤ V , T ≤ 175 °C. d. 1.6 mm from case. DD DS J e. Current limited by the package (die current = 130 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number
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MOSFET-FCPF20N60.pdf
Transfer Capacitance -- 95 -- pF C Output Capacitance V = 480V, V = 0V, f = 1.0MHz -- 65 85 pF oss DS GS C osseff. Effective Output Capacitance VDS = 0V to 400V, GS= 0V -- 165 -- pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300V, D = 20A -- 62 135 ns t Turn-On Rise Time RG = 25Ω -- 140
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sqjq160e.pdf
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
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MCP3221.pdf
0.2 ( 0 ( 0 L-0.2 N-0.2 I Negative INL I -0.4 -0.4 -0.6 -0.6 Negative INL -0.8 -0.8 -1 -1 0 100 200 300 400 0 100 200 300 400 IC Bus Rate (kHz) IC Bus Rate (kHz) FIGURE 2-1: INL vs. Clock Rate. FIGURE 2-4: INL vs. Clock Rate (V DD = 2.7V). 1 0.8 1 Positive INL 0.8 0.6 0.6 0.4 0.4 B ) Positive INL S0.2
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DS3231_M_MZ_Mems.pdf
otherwise noted.) (Figure 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS VCC Fall Time,PFMAX to VCCF 300 Fs VPFMIN V Rise Time, V to CC PFMIN VCCR 0 Fs VPFMAX Recovery at Power-Up tREC (Note 5) 250 300 ms Maxim Integrate 3│ www.maximintegrated.com DS3231M ±5ppm, I C Real-Time Clock AC Electrical Characteristics—I
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DS1302_DAL.pdf
SCLK X2 3 6 I/O 31 x 8 RAM for scratchpad data storage GND 4 5 RST Serial I/O for minimum pin count DS1302 8–PIN DIP (300 MIL) 2.5–5.5 volt full operation – Optional2.0–5.5voltfulloperationalsoavailable VCC2 1 8 VCC1 X1 2 7 SCLK Uses less than 300 nA at 2.5 volts X2 3 6 I/O GND 4 5 RST Single–byteormultiple–byte
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DS1302.pdf
SCLK X2 3 6 I/O 31 x 8 RAM for scratchpad data storage GND 4 5 RST Serial I/O for minimum pin count DS1302 8–PIN DIP (300 MIL) 2.5–5.5 volt full operation – Optional2.0–5.5voltfulloperationalsoavailable VCC2 1 8 VCC1 X1 2 7 SCLK Uses less than 300 nA at 2.5 volts X2 3 6 I/O GND 4 5 RST Single–byteormultiple–byte
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NDT455N.pdf
Drain-SourceBreakdownVoltage V = 0 V, I = 250 µA 30 V DSS GS D I ZeroGateVoltage DrainCurrent V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate-BodyLeakage,Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate-BodyLeakage,Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V GateThresholdVoltage V
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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APT10050B2VR_B.pdf
A ( 30 5V ( 30 5V N N E E R R U 20 U 20 C C I I A 4.5V A 4.5V D 10 D 10 , , ID ID 4V 4V 00 100 200 300 400 500 00 4 8 12 16 20 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS E 50 C 1.3 VDS D
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37378-DI300.pdf
- Halogen- gie von Siemens jetzt den R DS(onum den lampe Faktor5bis10beigleicherChipfläche.So Bild 3: Arbeitsprinzip verringertsichdieVerlustleistungamTran- des Phasenanschnitt- sistor im eingeschalteten Zustand erheb- 996176904dimmers mit Triac
in „Mos-Fet wird heis“ · Analoge Elektronik und Schaltungstechnik ·
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37378-DI300.pdf
- Halogen- gie von Siemens jetzt den R DS(onum den lampe Faktor5bis10beigleicherChipfläche.So Bild 3: Arbeitsprinzip verringertsichdieVerlustleistungamTran- des Phasenanschnitt- sistor im eingeschalteten Zustand erheb- 996176904dimmers mit Triac
in „Dimmer will nicht richtig dimmen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
JXI5020.pdf
ڵᄛ႕ཙޚੀٓຶᆴđ 3~45mA@DD=5VĠ 3~30mA@DD=3.3V z ູࠞࣚಒ֥ੀൻԛᆴđ ๙֡ࡗҵၳᆴğ< 1.5Ċ(၂Ϯᆴ); < 2.5Ċ(ቋնᆴ)Ġ GP: SOP24-300-1.00 ྉோࡗҵၳᆴğ< 1.5Ċ(၂Ϯᆴ); < 3.0Ċ(ቋնᆴ)b z ০Ⴈ၂۱ຓࢤቅđॖഡקੀൻԛᆴ Shrink SOP z ॹ֥ൻԛੀཙႋđ OE ğ70nsЌӻൻԛ၂ᇁྟ่֥ࡱ༯ ) z ۚղ 25MHzൈᇒੱ z ऎ Schmitt trൻೆልᇂr z Ҡቔğ 3.3/ڙห0 z ణߌЌЇል GF: SOP24-300-1.00 ੀࣚಒ؇ ቋնҵၳᆴ ) ่
in „Chinesische IC und ihre Verwandschaft“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ga1.pdf
0.080(0.003) 0.100(0.004) 0.200(0.008)MIN 0.180(0.007) 2.800(0.110) 0.550(0.022)REF 3.000(0.118) 2.300(0.091) 1.200(0.047) 1.400(0.055) 2.500(0.098) 0.890(0.035) 0.300(0.012) 0.510(0.020) 1.030(0.041) 1.900(0.075)REF AZ431-A 15 of 19 March 2018 Document number: DS36721 Rev. 6 - 2 www.diodes.com © Diodes
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PDF
2sk3142.pdf
2SK3142 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 1000 ) ) 300 10 ( A 10 µs h ( 0µ c 30 D100 P s P I W = 1 30 D 10 ms n n CO m s t e per 1 a 20 r 10 ato ho i C Operation in n( ) i n this area is c = D a 3 25 l r limited by DS(on) C) n 10 D 1 n h C 0.3 0.1 Ta =
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PDF
A100_IRF7413_IR.pdf
Vs. Temperature www.irf.com 3 IRF7413PbF 3200 20 VGS = 0V, f = 1MHz ID = 7.3A Ciss = Cgs + Cgd, C ds SHORTED ▯V = 24V 2800 Crss = Cgd ) DS C▯iss C = C + C ( ▯VDS = 15V oss ds gd g16 ) 2400 t p o ( 2000 C▯oss V c c12 a u c 1600 o a - a - 8 C 1200 t C a C▯rss , 800 S VG4 400 FOR TEST CIRCUIT▯ SEE FIGURE
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Datei
Tastatur.asm
Adressbyte .def C1 =r22; Count1 in BitH ;.def Komma = r22 ;Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS; kopiert aus Steuer .def Steuer = r23 ; Bit2 gesetzt=Minus; ; Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS .def adl = r24 ; Ergebnis vom ADC; sonst für Bild in Adressspeicherung
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PDF
24lc32a.pdf
time THIGH 4000 — 600 — ns Clock low time TLOW 4700 — 1300 — ns SDA and SCL rise time TR — 1000 — 300 ns (Note 1) SDA and SCL fall time T F — 300 — 300 ns (Note 1) START condition hold time THD:STA 4000 — 600 — ns After this period the first clock pulse is generated START condition setup TSU:STA 4700
in „Logikanalzyer mit FT232BL“ · Mikrocontroller und Digitale Elektronik ·
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PDF
8205.pdf
the Dual N-Channel logic TSSOP8 Package enhancement mode power field effect transistor 20V / 6.0A, DS(ON)=20mΩ(typ.)@V GS = 4.5V which is produced using high cell density. 20V / 5.2A, DS(ON)=27mΩ(typ.)@V GS = 2.5V Advanced trench technology to provide excellent SOT-26 Package R DS(ON) 20V / 6.0A, DS
in „Unbekannter IC "IP9001"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
V (BR)DSS ID= 250µA, VGS =0 30 V breakdown voltage Zero gate voltage V DS= max ratings 1 µA IDSS V DS= max ratings, drain currentGSV= 0) 10 µA TC = 125°C I Gate-body leakage V = ± 20V ±100 nA GSS current DS = 0) GS V GS(th) Gate threshold voltage V DS= VGS, D = 250µA 1 V Static drain-source on V GS= 10V, D = 11A 0.038 0.05 Ω R DS(on) resistance V = 5V, I = 11A 0.045 0.06 Ω GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward gfs(1) V DS= 15V, D= 11A 7 S transconductance C Input capacitance 330 pF
in „Unbekannter Spannungsregler von ST“ · Analoge Elektronik und Schaltungstechnik ·
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APT34F100B2_L_D-1593638.pdf
APT34F100B2 APT34F100L 1000V, 35A, .38Ω Max t rr≤300ns N-Channel FREDFET T-Max Power MOS 8 ™ is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264 This 'FREDFET' version has a drain-source (body) diode that has been optimized for high
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
21709c_EEPROM.pdf
and from the device. They may be left floating or tied tSSeor CC.V 2003 Microchip Technology Inc. DS21709C-page 11 24AA02/24LC02B 9.0 PACKAGING INFORMATION 9.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 24LC02B XXXXXNNN I/P13F YYWW 0327 8-Lead SOIC (150 mil) Example: XXXXXXXX
in „EEPROM mit Infineon XC2200 ueber IIC benutzten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
21709c.pdf
and from the device. They may be left floating or tied tSSeor CC.V 2003 Microchip Technology Inc. DS21709C-page 11 24AA02/24LC02B 9.0 PACKAGING INFORMATION 9.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 24LC02B XXXXXNNN I/P13F YYWW 0327 8-Lead SOIC (150 mil) Example: XXXXXXXX
in „24LC02B mit (scheinbar) seltsamer Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NCO8703.pdf
MOS transistors BLF177 which operate in class-AB at V DS= 50 V and I = 0.5 A/transistor. DQ The main properties at PO= 300 W are: Powergain: 22 to 23 dB Efficiency: 52.5 to 61% Return losses input: ≤ −15.5 dB 2nd harmonics: ≤ −25 dB 3rd harmonics: ≤ −16 dB
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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PDF
2243913.pdf
Ambient Temperature. Threshold vs. Ambient Temperature and V DD . 420 400 ) 380 µ (E360 R 5.5V IW340 320 300 -40 0 40 80 120 Temperature (°C) FIGURE 2-3: Write Current (I WRITE ) vs. Ambient Temperature. 2008-2013 Microchip Technology Inc. DS22107B-page 19 MCP454X/456X/464X/466X Note: Unless otherwise indicated
in „[V] 11St. SMD Dual Digital Poti - I2C Microchip MCP4561-103 10kOhm 256Steps Nonvolatile (8€)“ · Markt ·
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PDF
22107B-1180063.pdf
Ambient Temperature. Threshold vs. Ambient Temperature and V DD . 420 400 ) 380 µ (E360 R 5.5V IW340 320 300 -40 0 40 80 120 Temperature (°C) FIGURE 2-3: Write Current (I WRITE ) vs. Ambient Temperature. 2008-2013 Microchip Technology Inc. DS22107B-page 19 MCP454X/456X/464X/466X Note: Unless otherwise indicated
in „[V] 24St SMD Digital I2C / 256 Steps 5K Dual Poti Microchip MCP4561- 502E/MS (MSOP8) (alle 15€)“ · Markt ·
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PDF
2243913.pdf
Ambient Temperature. Threshold vs. Ambient Temperature and V DD . 420 400 ) 380 µ (E360 R 5.5V IW340 320 300 -40 0 40 80 120 Temperature (°C) FIGURE 2-3: Write Current (I WRITE ) vs. Ambient Temperature. 2008-2013 Microchip Technology Inc. DS22107B-page 19 MCP454X/456X/464X/466X Note: Unless otherwise indicated
in „[V] 44St. SMD Digital I2C / 256 Steps 10K Poti Microchip MCP4561- 103E/MS (MSOP8 Gehäuse)“ · Markt ·
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PDF
2243913.pdf
Ambient Temperature. Threshold vs. Ambient Temperature and V DD . 420 400 ) 380 µ (E360 R 5.5V IW340 320 300 -40 0 40 80 120 Temperature (°C) FIGURE 2-3: Write Current (I WRITE ) vs. Ambient Temperature. 2008-2013 Microchip Technology Inc. DS22107B-page 19 MCP454X/456X/464X/466X Note: Unless otherwise indicated
in „[V] 10St. Digitalpoti MCP4561-103E/MS 8MSOP orginalverpackt. (9€)“ · Markt ·
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PDF
MCP1403.pdf
package is electrically DD DD DD IN B 4 5 OUT B OUT B OUT B isolated. © 2007 Microchip Technology Inc. DS22022B-page 1 MCP1403/4/5 Functional Block Diagram (1) VDD Inverting 730 µA 300 mV Output Input Non-inverting Effective Input C = 20 pF 4.7V MCP1403 Dual Inverting (Each Input) MCP1404 Dual Non-inverting
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004.pdf
GS = 0 V Single Pulse 0.0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100 V SD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area ForwardVoltage 4 www.irf.com IRL1004 140 R V D LIMITED BY PACKAGE DS 120 V GS D.U.T. )100 RG ( -VDD
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PDF
bts117.pdf
R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160
in „BTS117 - maximale Schaltfrequenz?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bts117.pdf
R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160
in „Schaltung mit Taster starten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTS117.pdf
R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160
in „Leistungsschalter für MC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DE.pdf
25.0 12.5 15.24 7.62 6-.047 dia 2.54 12.70 7.62 8-.047 dia .984 .492 .600 .300 .100 .500 .300 12.0 .472 7.62 7.62 .300 .300 3.5 .020 .138 0.8 0.4 .020 dia .032 0.8 .016 Tolerance : ±0.1 ±.004 .032 2.44 7.62 15.24 7.62 1.0 .096 .300 Schematic (Bottom view) .600 .300 .039 Single
in „Spart man Strom wenn man den ADC langsamer taktet?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADG507A.pdf
V SS VSS VSS V SS VSS V min VDD V DD VDD VDD V DD VDD V max R ON 280 280 280 typ –10 V V S +10 V, DS=1 mA; Test Circuit 1 450 600 450 600 450 600 max 300 400 300 400 max V DD= 15 V ( 10%), SS= –15 V ( 10%) 300 400 max V = 15 V ( 5%), V = –15 V ( 5%) DD SS R ONDrift 0.6 0.6 0.6 %/°C typ –10 V V S +10
in „Videopfad - LM1881 -Sync-Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
A200_MCP1407-EP_MIC.pdf
2: Exposed pad of the DFN package is electrically isolated. I G G © 2006 Microchip Technology Inc. DS22019A-page 1 MCP1406/07 Functional Block Diagram (1) VDD Inverting 130 µA 300 mV Output Output Input Non-inverting Effective Input C = 25 pF 4.7V MCP1406 Inverting MCP1407 Non-inverting GND Note 1: Unused
in „Treiber für IRF1404 ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MBI5039_Preliminary_Datasheet_V1.01-English.pdf
IOUT=20mA R ext700Ω - ±3.0 ±6.0 % V DS=1.0V Output Current vs. V DSwithin 1.0V and 3.0V, Output Voltage Regulation* %/dV DS R ext700Ω@20mA - ±0.1 ±0.3 % / V Output Current vs. %/dV DD V DDwithin 4.5V and 5.5V - ±1.0 ±2.0 % / V Supply Voltage
in „LED-Treiber-IC mit möglichst vielen Ausgängen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRL540N-UMW.pdf
Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications. General Features ● V DS = 100V,D =30A RDS(ON)< 28mΩ @ V GS0V (Typ:24 mΩ) Schematic diagram ● Special process technology for high
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh4210d_pbf.pdf
1mA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C Reference to 25°C, ID= 10mA R DS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, D = 50A ––– 1.10 1.35 VGS = 4.5V,DI = 50A V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100µA GS(th) DS GS D V GS(th) Gate
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
SSM5N15FU__DP_.pdf
temperature Ta (°C) Ambient temperature Ta (°C) 3 2014-03-01 SSM5N15FU (Q1, Q2 common) ⎪Y fs⎪ – D IDR – V DS 1000 250 Common Source Common Source 500 V = 3 V VGS = 0 V DS ) e 300 Ta = 25°C m 200 Ta = 25°C c ( D a i 100 D d S) I I a m 50 n 150 G DR e ( e s ⏐ 30 u S a f c t ⏐ s 100 r 10 e w e o 5 n F a 50 3 D
in „(S)uche UPA572“ · Markt ·