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PDF
LM317_Datenblatt.pdf
15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DS0433 - Rev 22 page 17/34 LM217, LM317 TO-220FP type A package
in „12V Membranpumpe (KNF) läuft nur mit halber Leistung bei interner 3V-Steuerspannung (LM317)“ · Analoge Elektronik und Schaltungstechnik ·
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AND9093-D.PDF
of 1.8 V or higher. intersects the outer SOA boundaries in two places: at the Safe Operating Area R DS(on) limit and at the V DS limit. Additional lines are The Safe Operating Area (SOA) defines the safe operating plotted for a single pulse of 10 ms, 1 ms, 100 ms and 10 ms duration. The safe operation
in „Widerstandsdimensionierung im Betrieb als Schalter für RC Elektronik mit IRLIZ44N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN-9010.PDF
is almost C + DS P−body N Wd(epi.) no change in the value of P , as the depletion region doesn’t exceed 10% of the P−body. Hence, the change of C gse to X / 2 V DS is very small. Cds Cgd: Capacitance between Gate and
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
20002019c.pdf
10 100 1000 Capacitive Load (pF) Frequency (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency. 2006-2016 Microchip Technology Inc. DS20002019C-page 9 MCP1406
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PDF
LMD18200.pdf
implemented (see Types of PWM Signals). www.national.com 8 M D Typical Applications (Continued) 1 2 0 0 DS010568-10 FIGURE 7. Fixed Off-Time Control DS010568-11 FIGURE 8. Switching Waveforms TORQUE REGULATION Locked Anti-Phase Control of a brushed DC motor. Current sense output of the LMD18200 provides load
in „Halbbrücke für BLDC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Solar-DS.pdf
generalize everything, is because i might try this on an old cell phone before on an expensive thing (a la DS). This is theoretically not DS specific, right? Sorry to bother. If this is getting old, just don't reply. thanks for the help :) dark sponge says: May 31, 2009. 1:10 PM REPLY You would have to have
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PDF
DS_UJ3N120070K3S-1530204.pdf
°C 20 VGS2V, I D10A, T = 25°C 63 J VGS0V, I D10A, 70 90 TJ= 25°C Drain-source on-resistance RDS(on) mW VGS2V, I D10A, T = 175°C 139 J V =0V, I =10A, GS D 154 TJ= 175°C Gate threshold voltage V G(th) V DS5V, I D 35mA -14
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PDF
UPA1721.pdf
SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, I = 5.0 A 8.0 10.5 m R DS(on)2 VGS = 4.5 V, I = 5.0 A 10.0 14.0 m R DS(on)3 VGS = 4.0 V, I = 5.0 A 12.0 17.0 m Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, I = 1 mA 1.5 2.0 2.5
in „RC-Steller Kontronik Smile 30-6-12 Bestückung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP2021.pdf
40 -25 -10 5 20 35 50 65 80 95 110 125 Temperature( C) DS22298A-page 24 2012 Microchip Technology Inc. MCP2021A/2A FIGURE 2-8: TYPICAL I BBQ VS. FIGURE 2-10: TYPICAL I PD VS. TEMPERATURE - 3.3V TEMPERATURE -
in „MCP2021 -> Welcher ESD Level wird erreicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Explanation_of_Data_Sheet_Parameters__INF.pdf
Inhalt Seite Contents Page 4.5 Typischer Drain-Source 4.5 Typical Drain-Source On State Widerstand R DS(on) f ID) . . . . 29 Resistance R DS(on) f(ID) . . . . . 29 4.6 Drain-Source 4.6 Drain-Source On State Widerstand R = f T ) . . . . 30 Resistance R = f(T ) . . . . 30 DS(on) J DS(on) J 4.6.1 N-Kanal
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PDF
IRFB3006_IR.pdf
= 175°C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c D = 170A a V = 10V
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PDF
FB180SA10P.pdf
T = 150 C V V DS= 80V t J ( V DS= 50V n g 15 V DS= 20V r l u100 o C V r r u T = 25 C u S J S 10 o o - - a 10 t r G , , 5 D S I V VDS = 25V FOR TEST CIRCUIT 1 20µs PULSE WIDTH 0 SEE FIGURE 13 4 5 6 7 8 9 10 0 50 100 150
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PDF
IRFP450B-1.pdf
6 8 10 10 10 10 V ,Drain-SourceVoltage[V] V GSate-SourceVoltage[V] DS Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.5 V =10V 1.2 GS 1 c ]10 t t ] i0.9 VGS20V e [ e u N - C S O i D
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Datei
DS18x20_Temperature.ino
OneWire ds(10); // on pin 10 (a 4.7K resistor is necessary) void setup(void) { Serial.begin(9600); } void loop(void) { byte i; byte present = 0; byte type_s; byte data[12]; byte addr[8]; float celsius, fahrenheit
in „DS18B20 Verkabelungs od Software Problem“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS18x20_Temperature.ino
OneWire ds(10); // on pin 10 (a 4.7K resistor is necessary) void setup(void) { Serial.begin(9600); } void loop(void) { byte i; byte present = 0; byte type_s; byte data[12]; byte addr[8]; float celsius, fahrenheit
in „DS18B20 an Arduino“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS169.pdf
(tp) parameter: t p parameter: D=t /Tp 1 1000 limited by on-state 10 µs resistance 100 µs 1 ms 0.5 0.1 10 ms 100 0.2 ] ] / 0.1 [ [ D A 0.05 I t Z 0.02 0.01 10 0.01 DC single pulse 0.001 1 -4 -3 -2 -1 0 1 2 1 10 100 1000 010 10 10 100 101 10 10 10 100 V DS [V] tp[s] Rev
in „Strombegrenzung mit Fet um Akku zu laden“ · Analoge Elektronik und Schaltungstechnik ·
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BUZ71.pdf
10 0 1 2 3 0 GS 10 10 10 10 0 1 2 3 4 5 6 V , DRAINTO SOURCEVOLTAGE (V) V , DRAINTO SOURCEVOLTAGE (V) DS DS FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS ©2001 Fairchild Semiconductor
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2N7002.pdf
drain-to-source - - 7.5 VGS = 5.0V, ID= 50mA R DS(ON) Ω on-state resistance - - 7.5 V = 10V, I = 500mA GS D ∆R Change in R with temperature - - 1.0 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 80 - - mmho V = 25V, I = 500mA
in „MOSFET Beschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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DM8603EP.pdf
: DM8603-DS-P01 November 8, 2010 Preliminarydatasheet 1 DM8603-12-DS-P01 November8,2010 Downloaded from Elcodis.com electronic components distributor DM8603 10/100Mbps3-portEthernetSwitchControllerwithMII/RMIIInterface
in „2 Port Switch IC wie in IP telefonen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DM8603EP.pdf
: DM8603-DS-P01 November 8, 2010 Preliminarydatasheet 1 DM8603-12-DS-P01 November8,2010 Downloaded from Elcodis.com electronic components distributor DM8603 10/100Mbps3-portEthernetSwitchControllerwithMII/RMIIInterface
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IRFI4212H-117.pdf
On-Resistance vs. Temperature 10000 12.0 VGS = 0V, f = 1 MHZ C = C + C , C SHORTED ID= 6.6A iss gs gd ds Crss = Cgd V 10.0 V DS= 80V Coss = Cds+ Cgd e V DS= 50V ) g F 1000 l 8.0 V DS= 20V ( V c Ciss e a r c o 6.0 a - a C oss - , 100 t 4.0 C Crss G , G V 2.0 10 0.0 1 10 100 0 2 4 6 8 10 12 14 VDS , Drain-to-Source
in „UV-Laserdrucker II“ · Platinen ·
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Datei
messung.c
bei parasitärer Spannungsversorgung) if ( DS18X20_start_meas( DS18X20_POWER_PARASITE, tempID ) == DS18X20_OK ) { // warten bis Messung fertig ist. DS18S20 braucht die vollen 750ms if (tempID[0] == DS18B20_ID) _delay_ms(DS18B20_TCONV_10BIT); else
in „Ulrich Rading Logdatei ändern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1801.pdf
Inc. DS22051D-page 9 MCP1801 NOTES: DS22051D-page 10 2010 Microchip Technology Inc. MCP1801 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: MCP1801 PIN FUNCTION TABLE
in „USB-Spannungsversorgung lässt PIC24FJ128 abstürzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDS356AP.pdf
V = -5 V, I = -1.1 A 2 S FS DS D DYNAMIC CHARACTERISTICS C InputCapacitance V = -10 V, V = 0 V, 280 pF iss DS GS f = 1.0 MHz C oss Output Capacitance 170 pF C rss ReverseTransferCapacitance 65 pF SWITCHING CHARACTERISTICS (Note2)
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PDF
DS_SJDP120R085_rev1.3.pdf
Typical Output Characteristics I = f(V ); T = 25 °C; parameter: V I = f(V ); T = 100 °C; parameter: V D DS j GS D DS j GS 70 40 ) ) 35 2.0 V ( 60 2.0 V ( 1.0 V t 1.0 V n 0.0 V e 50 0.0 V e 30 r u -1.0 V C C 25 e 40 -1.0 V e r r 20 o o -2.0 V - 30 - 15 i -2.0 V i r 20 r 10 D D ID ID 10 5 0 0 0 1 2 3 4 5 0
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS10-g0066b-4xDS18B20_PID.c
// ******************* // * Datenspeicher 10 * // ******************* // Flüssigkristallanzeige LMK62R125A1 // DS18B20 NR. 13,14,15,16 an 63-10 Adresse 0x18 // ************************************************************************* #include <MSP430x16x.h> // für MSP430F1611 #include "DS10-gP12-SD_MAINTI.c" #include "DS10-g0066a-LMK62-SD.h" #include "DS10-gP11-DS32C35.h" #include "DS10-g0066a-DS18B20-NR1bis18-LP63-11.h" #include "DS10-g0066a-SD_Karte.h" #include <signal.h> unsigned char
in „Digitaler PID-Regler für elektromotorisches Heizkörperventil“ · Mikrocontroller und Digitale Elektronik ·
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Datei
PLC-LOX-300.ino
inputs 1-8 6 digital inputs 9-16 7 digital inputs 17-24 8 analog input 1 0-256 9 analog input 2 0-256 10 service - reset (bit 0) 11 1st DS2438 Temp (value multiplied by 100) 12 1st DS2438 Vad (value multiplied by 100) 13 1st DS2438 Vsens (value multiplied by 100) - 39 DS2438 values (up to 10 sensors) 40-50 DS18B20 Temperature (up to 10 sensors) (value multiplied by 100) Combination of 1wire sensors must be up to 10pcs maximum (DS18B20 or DS2438) using RS485 the UDP syntax must have \n symbol at the end of
in „1 Wire auf 2 GPIO pins“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Atmega16_3x_DS18S20.c
W1_DDR DDRC //Datenrichtung jeweils festlegen - je nach dem ob Daten zum DS gesedent, oder vom DS empfangen werden sollen #define LED_OUT PORTB //PORT für die LED Anzeige #define LED_DDR DDRB //DDR für die LED Anzeige // Kommandos an den DS1820 #define MATCH_ROM 0x55 //64 Bit code wird vom Master an ale DS gesendet - nur der DS mit dem Passenden 64Bit "namen" antwortet #define SKIP_ROM 0xCC //Master spricht alle DS simultan an - gefollgt von einem Convert_t beginnen alle mit der Temp. Konvertierung #define
in „Thermomixer noch einmal neu - dieses mal nur ein MEGA16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GU256X16-333A_1.pdf
DIP Switch(S0-S4). The display accept data or command writing, when *CS is "0" and address line ( DS0-DS3) is equal to DIP Switch setting (S0~S3). 5 9 Functions (Cont’d) The relationship between DS0-DS3 and S0-S3 is as follows. Setting of DIP Switch Device Select Signal Module Address S3 S2 S1 S0 DS3
in „[V] Riesiges VFD Grafikdisplay mit 256x16 Pixeln von Noritake“ · Markt ·
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PDF
GU256X16-333A_1.pdf
DIP Switch(S0-S4). The display accept data or command writing, when *CS is "0" and address line ( DS0-DS3) is equal to DIP Switch setting (S0~S3). 5 9 Functions (Cont’d) The relationship between DS0-DS3 and S0-S3 is as follows. Setting of DIP Switch Device Select Signal Module Address S3 S2 S1 S0 DS3
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IRLB8748PBF.PDF
250µA ∆Β V / T DSS J Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C,DI = 1mA R DS(on) Static Drain-to-Source On-Resistance––– 3.8 4.8 V GS= 10V, D = 40Ae m Ω ––– 5.5 6.8 V GS= 4.5V, D = 32Ae V GS(th) 1.35 1.8 2.35 V Gate Threshold Voltage V DS= VGS ID= 50µA ∆V GS(th)TJ Gate Threshold
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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MCP1802.pdf
2-26: Power Up Timing. FIGURE 2-29: Power Up Timing From SHDN. 10 5.0V I = 100 mA OUT z 1 / µ 0.1 2.5V ( i o N0.01 0.001 0.01 0.1 1 10 100 1000 Frequency (KHz) FIGURE 2-27: Dynamic Load Response. FIGURE 2-30: Noise Graph. 2010 Microchip Technology Inc. DS22053C-page
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PDF
NDP6020P.pdf
V = -2.5 V, I =-10 A 0.064 0.075 DS(ON) GS D ID(on) On-StateDrainCurrent VGS-4.5 V,V =-DSV -24 A gFS ForwardTransconductance VDS-5 V,I =D12A 14 S DYNAMICCHARACTERISTICS C iss InputCapacitance VDS-10 V, V =0GS 1590 pF f
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PDF
DS1307.pdf
internal circuitry as 1.25 x V nominal. A BAT lithium battery with 48mAhr or greater will back up the DS1307 for more than 10 years in the absence of power at 25ºC. UL recognized to ensure against reverse charging current when used in conjunction with a lithium battery. See “Conditions of Acceptability”
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfiz34n.pdf
°C 1 C A 1 A 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.4▯ID = 26A c ) a A i 2.0 t TJ=
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PDF
irl1404.pdf
1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 e ID= 160A ) c ( t t i 2.0
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PDF
LND150_C041114.pdf
- - 100 nA V GS= ± 20V, V DS0V - - 100 nA V GS= -10V, V DS450V I Drain-to-source leakage current D(OFF) - - 100 µA V DS= 0.8V Max Rating, V GS= -10V, TA= 125 C IDSS Saturated drain-to-source current 1.0 - 3.0 mA V GS= 0V, V DS=
in „DDR- Mosfet SM104 in Sinusgenerator GF22“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf740pbf.pdf
10 4 5 6 7 8 9 10 V , Drain-to-Source Voltage (V) 91054_01 DS 91054_03 VGS ,Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T C 25 °C Fig. 3 - Typical Transfer Characteristics c 3.0
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
stgw60h65dfb.pdf
IGBT K ZthTO2T_A δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10 -1 δ = 0.01 Single pulse 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 p (s) Figure 26. Thermal impedance for diode DS9535 - Rev 8 page 9/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Test circuits 3 Test circuits
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PDF
irlml6344pbf.pdf
150°C Tj = 25°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.0 c I = 5.0A a D A i V GS = 4.5V
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
150°C Tj = 25°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.0 c I = 5.0A a D A i V GS = 4.5V
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlr3717.pdf
49 ––– ––– S V = 10V, I = 12A DS D Q g Total Gate Charge ––– 21 31 Qgs1 Pre-Vth Gate-to-Source Charge ––– 6.4 ––– V DS= 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC V = 4.5V GS Qgd Gate-to-Drain Charge ––– 7.2
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PDF
Si2302.pdf
Voltage VGS(th) V DS= VGS, D = 50 mA 0.65 Gate-Body Leakage I V = 0 V, V = ▯8 V ▯100 nA GSS DS GS V DS= 20 V, GS = 0 V 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20 V,GS = 0 V,JT = 55▯C 10 a VDSw 5 V, VGS = 4.5 V 6
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70628.pdf
Voltage VGS(th) V DS= VGS, D = 50 mA 0.65 Gate-Body Leakage I V = 0 V, V = ▯8 V ▯100 nA GSS DS GS V DS= 20 V, GS = 0 V 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20 V,GS = 0 V,JT = 55▯C 10 a VDSw 5 V, VGS = 4.5 V 6
in „MOSFET CJ2302 geht kaputt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK100-50GL_1.pdf
) = f(T ); cmbditions: V = 5 V IS ID = f(V ); parameter V ; t = 250 s & t < t DS IS p p d sc 100 ID & IDM / A BUK100-50GL ID / A BUK100-50GL 40 DS/I tp = VIS / V = 6 )V 35 S(ON 10 us 5.5 RD 30 10 5 100 us 25 4.5 1 ms 20 DC 10 ms 15 4 1 100 ms 3.5 10 3 Overload protection characteristics
in „Beleuchtung mit 8515 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
670135-DS01-1.pdf
DS DSS GS J On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , VGS = 10V 14 - - A Gate to Source Leakage Current IGSS V GS = ±20V - - ±100 nA On Resistance (Note 2) rDS(ON) ID= 7.9A, VGS =
in „Suche IRFP 450B“ · Markt ·
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Datei
messung.c
!= 0) { // T messen (einzeln starten und messen bei parasitärer Spannungsversorgung) if ( DS18X20_start_meas( DS18X20_POWER_PARASITE, tempID ) == DS18X20_OK ) { // warten bis Messung fertig ist. DS18S20 braucht die vollen 750ms if (tempID[0] == DS18B20_ID) _delay_ms(DS18B20_TCONV_10BIT); else
in „1Wire DS18B20 auslesen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18s20.c
=DS18B20Sensor; // Set the resolution to its default value pDS18x20->scratchpad[4]=CONF_RES_12b; } break; case 0x10: pDS18x20->SensorModel=DS18S20Sensor; break; default: return 1; } return 0; } /* Reads
in „Timerberechnung die hunderste“ · Mikrocontroller und Digitale Elektronik ·