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A200_MCP1407-EP_MIC.pdf
1.7 r h 1.6 u 100 e 1.5 t 80 h e T 1.4 VLO c 60 u 1.3 i 40 n 1.2 u INPUT = 0 I Q 20 1.1 0 1 4 6 8 10 12 14 16 18 -40 -25 -10 5 20 35 50 65 80 95 110 125 o Supply Voltage (V) Temperature ( C) FIGURE 2-9: Quiescent Current vs. FIGURE 2-12: Input Threshold vs. Supply Voltage. Temperature. DS22019A-page 6
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BMA423.pdf
fifo_self_wakeup enabled write_reg(addr=0x7C,val=0x03) read sensor data accel_data[]=burst_read(addr=0x12, bytes=6) End BST-BMA423-DS000-00 | Version 1.0 | August 2017 Bosch Sensortec © Bosch Sensortec GmbH reserves all rights even in the event of industrial property rights. We reserve all rights of disposal
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dds_ds558.pdf
plots by the parameter A is the peak spur level achieved for the simulation. The eight spurs are –88.12, –88.22, –86.09, –88.80, –87.21, –87.55, –87.83, 8 www.xilinx.com DS558 April 19, 2010 Product Specification LogiCORE IP DDS Compiler v4.0 –87.12 dB below the output frequency. The worst case value of
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IRLZ34.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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irlz34n.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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NDP6020P.pdf
VGS -4.5 V, ID=-12 A 0.041 0.05 Ω T =125°C 0.06 0.08 J R StaticDrain-SourceOn-Resistance V = -2.7 V,I =-10 A 0.059 0.07 DS(ON) GS D R StaticDrain-SourceOn-Resistance V = -2.5 V, I =-10 A 0.064 0.075 DS(ON) GS D ID(on)
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Datei
familycode10.txt
Familycodes aus app155.pdf http://pdfserv.maxim-ic.com/en/an/AN155.pdf DS1990A 01 1 Wire Address only DS1990R 01 1 Wire Address only DS2401 01 1 Wire Address only DS2411 01 1 Wire Address only DS1205 02 lt. ibview32.hlp/crc-by..3.pas DS1425 02 MultiKey iButton, 1152 bit secure
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DS1615.pdf
rate-Register geschrieben wird, startet Elektor 9/99 21 IC3 78L05 D3 Bild 3. Die Harware 3 R3 R2 R1 1N4148 des DS1615-Evalua- 0 1 1 C6 C3 tionkits. 1 C1 C2 10µ16V 100n D1 D2 10µ 16V 10µ 25V DTR C5 C4 5 6 INS OUTS 10µ 16V 100n BT1 1 VBAT 16 2 K1 X1 X1 IC1 12 8 3V6 SCLK 1 RST 10 6 NC V DRV 2 6 3 X2 I/O11 IC2 32.768k4z
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IRFR2307Z.pdf
250µA ∆V (BR)DSSTJ Breakdown Voltage Temp. Coefficient ––– 0.072 ––– V/°C Reference to 25°C,D= 1mA R DS(on) Static Drain-to-Source On-Resistance ––– 12.8 16 mΩ VGS= 10V, D = 32A e V GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS= VGS ID= 100µA gfs Forward Transconductance 30 ––– ––– S VDS= 25V, D = 32A
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PDF
BF245abc.pdf
MIN. TYP. MAX. UNIT VDS drain-source voltage − − ±30 V VGSoff gate-source cut-off voltage D = 10 nA; DS = 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V I drain current V = 15 V; V = 0 DSS DS GS BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb= 75
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MBI5040_Datasheet_V1.00-English.pdf
18 OUT15 LE 4 21 GCLK OUT0 2 17 OUT14 OUT0 5 20 OUT15 OUT1 3 16 OUT13 OUT1 6 19 OUT14 OUT2 4 15 OUT12 OUT2 7 18 OUT13 OUT3 8 17 OUT12 OUT3 5 14 OUT11 OUT4 6 13 OUT10 OUT4 9 16 OUT11 7 8 9 10 11 12 OUT5 10 15 OUT10 OUT6 11 14 OUT9 OUT7 12 13 OUT8 MBI5040GF/GP/GTS MBI5040GFN Terminal Description Pin Name
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irlu024n.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A
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irlu024N.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A
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STP6NK90ZFP.pdf
2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS2985 - Rev 6 page 11/26 STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z D²PAK (TO-263) package information Figure 24. D²PAK (TO-263) type B package outline 0079457_24_B DS2985 - Rev 6 page 12/26 STB6NK90ZT4
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PDF
STP6NK90ZFP.pdf
2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R 0.40 V2 0° 8° DS2985 - Rev 6 page 11/26 STB6NK90ZT4, STP6NK90Z, STP6NK90ZFP, STW7NK90Z D²PAK (TO-263) package information Figure 24. D²PAK (TO-263) type B package outline 0079457_24_B DS2985 - Rev 6 page 12/26 STB6NK90ZT4
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AVR128DA28_32_48_64.pdf
data loss may result during halted debugging. © 2020 Microchip Technology Inc. Preliminary Datasheet DS40002183A-page 105 AVR128DA28/32/48/64 SLPCTRL - Sleep Controller 12.4 Register Summary Offset Name Bit Pos. 0x00 CTRLA 7:0 SMODE[2:0] SEN 0x01 VREGCTRL 7:0 PMODE[2:0] 12.5 Register Description © 2020
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IRF7416_datasheet.pdf
–– ––– 100 nA V = 20V GS Q g Total Gate Charge ––– 61 92 ID= -5.6A Q Gate-to-Source Charge ––– 8.0 12 nC V = -24V gs DS Q gd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 18 ––– VDD = -15V tr Rise Time ––– 49 ––– ID= -5.6A ns td(off) Turn-Off Delay
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RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
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PDF
OB2223CPA.pdf
reliability.ditions for extended f o n t C h i g r - B n O ©On-Bright Electronics Confidential OB_DOC_DS_2223A0 - 2 - High Precision Low Cost MCM Power Switch Marking Information ▯ l { l t o TPin NumPin NameEI/O Description tia 3 ENBP I Connected to GND for 12V output to GNDck 5/6 DRAIN O of the transformer
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irfiz34n.pdf
16A C iss= Cgs + Cgd , Cds SHORTED ▯VDS = 44V C rss= Cgd V ▯V = 28V 1000 Ciss C oss= Cds + Cgd (16 DS g ) l p 800 o e V c Coss c12 a u c 600 o a - a - 8 C t C 400 a C▯rss , S4 200 VG FOR TEST CIRCUIT▯ SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (
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Datei
neuro.asm
rd_puffer_off] ; read the original bytes from there mov cx,[rd_bytes] mov bx,[rd_handle] mov ah,3fh push [rd_ds_merk] ; set DS to readbuffer pop ds pushf call cs:[int21alt] push cs pop ds mov cx,[rd_endpos_hi] mov dx,[rd_endpos_lo] mov al,0 call set_pos ; correct the pointer position jmp do_ret1 fall_12: ; ---
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irlr120n.pdf
1MHz ID = 6.0A Ciss = Cgs + Cgd , Cds SHORTED C = C ) VDS = 80V rss gd ( VDS = 50V Coss = Cds + Cgd e12 V = 20V 600 Ciss a DS F l ( o e V c c 9 a u i 400 o a - a C oss t C e 6 , a C G 200 C , rss G3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) Q G
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PDF
IOR__IRFR6215.pdf
= Cgs + Cgd , Cds SHORTED VDS = -120V C rss= Cgd V VDS = -75V C oss= Cds + Cgd ( V = -30V 1600 g16 DS ) t p C iss o ( V c 1200 e12 n r i o c C S p oss o a 800 - 8 , t C Crss G , 400 S G4 - FOR TEST CIRCUIT 0 A 0 SEE FIGURE 13 A 1 10 100 0 20 40 60 80 -VDS , Drain-to-Source Voltage (V) Q G Total Gate
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PDF
OV528_DS_1.3.pdf
power 13, 23, 31, 37, 46, DVSS Digital ground 57, 63 5, 42 CVSS Digital ground OV528 Datasheet Doc #DS201 © OmniVision Technologies Inc., 2002, version 1.0 Page 11 D ATASHEET OV528-T100 Pin Descriptions Table 12. OV528-T100 Pin Descriptions – All Pins in Numeric Order Pin # Name I/O Function 1 P0[1] I
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NL6448AC33-29.pdf
synchronous signals (Hsync, Vsync), dot clock (CLK) Supply voltages 3.3 V [5.0 V] (Logic, LCD driving), 12.0 V (Backlight) Backlight Edge light type, two cold cathode fluorescent lamp Power consumption 7.1 W (typ., 3.3 V, 12.0 V) 4 Data Sheet EN0439EJ1V0DS00 NL6448AC33-29 GENERAL SPECIFICATIONS Item Specification
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Datei
umrech.txt
, z.B. (-1)/2=+0 Wer seinen Algorithmus testen will, hier die korrekte Zuordnung: Mein Testobjekt: DS1820 von Pollin 180014 (2,50) 0 1 6 7 9bit 12bit 12bit-Äquivalent ff 00 01 10 127,5 127,6875 07fb max. Temp (lötkolbengetestet ;-)) ff 00 02 10 127,5 127,6250 07fa ff 00 03 10 127,5 127,5625 07f9 ff 00
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2N4416.pdf
Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage 10 500 100 20 ) r @ I = 300 mA,V = 0 V s Ω DS D GS A I − ( gos@ VDS = 10 V, GS= 0 V g ( 16 DSS 8 F c 400 f = 1 kHz 80 s t r a − e a i O u d e p C g 6 T - 300 rDS 60 u i 12 fs n n c r c O gos n D n r u i d o 40 t r 8 4 c - 200 n t n i e a c r µ −
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ssr2n60a.pdf
MOSFET SSR/U2N60A FEATURES BV DSS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology R DS(on) = 5 Ω Lower Input Capacitance I = 1.8 A Improved Gate Charge D Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 25 μA (Max.) @ V DS = 600V Lower R : 3.892 Ω (Typ.) 2 DS(ON) 1 12 3
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PDF
PMV48XPA.pdf
250 µA; V GS = 0 V; Tj= 25 °C -20 - - V breakdown voltage VGSth gate-source threshold ID= -250 µA; V DS = VGS ; j = 25 °C -0.75 -1 -1.25 V voltage IDSS drain leakage current V DS = -20 V; GS = 0 V; Tamb = 25 °C - - -1 µA IGSS gate leakage current V GS = -12 V; DS = 0 V; Tj= 25 °C - - -100 nA R drain-source
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PDF
datasheet.pdf
I –12 n r –3 V u–8 C i r VGS = –2.5 V D–4 0 –2 –4 –6 –8 –10 Drain to Source VoltagV DS (V) 4 www.DataSheet4U.com 2SJ332(L), 2SJ332(S) Typical Tranfer Characteristics –20 ) –16 V DS = –10 V ( Pulse Test I –
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PDF
SH367107X_BMS_IC.pdf
R10 1K 8 21 1 3 C 9 DSG VC4 20 VC5 1K(0805) 2 R V 10 DSD VC5 19 VC3A R11 D3 RB501 3 11 CDC VC6 18 R12 1K 4 1 RS2 VC7 R13 1K 8 12 RS1 VC8 17 R14 1K 5 4 4 6 13 TS GND 16 GND R15 1K 6 D 4 1 0 14 DS SEL0 15 7 N R 5 5 5 ) ) 8 1 104/25V / / 7 / SH367106 K 0 0 C5 0 0 1 4 1 1 8 8 CON8 1 1 R 1 ( ( 5 V V 0 0 5
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PDF
UP6281B8.pdf
and PHASE pins provides the bias current for the high-T sidegatedriver. Rev. F03, File Name: uP6281-DS-F0300upi-semi.com 3 Free Datasheet http://www.Datasheet4U.com uP6281 Absolute Maximum Rating SupplyInputVoltage,VCC12(Note1)---------------------------------------------------------------------------
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PDF
Datasheet__ICM-20948_.pdf
.............................................................................. 76 Document Number: DS-000189 Page 5 of 89 Revision: 1.3 ICM-20948 12 REGISTER MAP FOR MAGNETOMETER...........................................................................................................77 12.1 R EGISTERM
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PDF
stm32g030c6.pdf
NRST 4 7 7 11 PA0 E/A FT_a (3) SPI2_SCK, USART2_CTS, ADC_IN0, TAMP_IN2,WKUP1 SPI1_SCK/I2S1_CK, 4 8 8 12 PA1 E/A FT_ea (3) USART2_RTS_DE_CK, ADC_IN1 I2C1_SMBA, EVENTOUT DS12991 Rev. 4 31/94 34 Machine Translated by Google STM32G030x6/x8 Pinbelegung, Pinbeschreibung und alternative Funktionen Tabelle 12.
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PDF
DS8816A-05.pdf
B TON Balance S/H GM - + V B - I 40µ CS Current + To Protection Logic Limit CS To SSOK - 10µ X(-1/12) + OCSET/SS Copyrigh©2019 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. DS8816A-05 March 2019 www.richtek.com 3 RT8816A Operation The
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PDF
16F648a_40044F.pdf
TRISA0 1111 1111 1111 1111 Legend: - = Unimplemented, read as ‘0’. © 2007 Microchip Technology Inc. DS40044F-page 69 PIC16F627A/628A/648A NOTES: DS40044F-page 70 © 2007 Microchip Technology Inc. PIC16F627A/628A/648A The USART can be configured in the following modes: 12.0 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS
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PDF
IRF9Z34-Vishay.pdf
THEPRODUCTDESCRIBEDHEREINANDTHISDATASHEETARESUBJECTTOSPECIFICDISCLAIMERS, SETFORTHATwww.vishay.com/doc?91000 IRF9Z34, SiHF9Z34 Vishay Siliconix L I V AS Vary t to obtain DS p required AS V R D.U.T DS G -V + DD AS VDD - 10 V tp 0.01 Ω p V DS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms 1200 ) ID J Top - 7.3 A ( 1000 - 13 A y Bottom - 18 A r n 800 E e l 600 P l g 400 i , A 200 E VDD = - 25 V 0 25 50 75 100 125 150 175 91092_12c Starting T , Junction Temperature (°C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 50 kΩ - 10 V 12 V 0.2 µF 0.3 µF - Q GS QGD D.U.T. +V DS V G V
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PDF
TC4420.pdf
10,000 1 5 7 9 11 13 15 Frequency (kHz) Supply Voltage (V) FIGURE 2-9: Supply Current vs. FIGURE 2-12: Low-State Output Frequency. Resistance vs. Supply Voltage. DS21419C-page 6 2004 Microchip Technology Inc. TC4420/TC4429 Note: Unless otherwise indicated, T = +25°C with A.5V ≤ V DD ≤ 18V. 4 - 13 )
in „Peltier-Driver Flyback-Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_SX1261-2_V1.1-1307803.pdf
chapter 12.1 Register Map SX1261/2 www.semtech.com 2 of 107 Data Sheet Rev.1.1 Semtech DS.SX1261-2.W.APP December 2017 Table of Contents 1. Architecture..........................................................
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TM56M152A-tenxtechnology.pdf
~ADC12 Internal channel Pin Change VBG,1/4VCC 8-bit Wake All Pins RISC core PWM0P PWM0N WKT PWM Timer0 WDT PWM1O~PWM5O LVR Timer1 Reset nRESET LVD VSS VCC TM56M152A Block Diagram DS-TM56M152A_E 11 Rev 0.96,
in „MCU identifikation/Datenblatt - MC9989A0ZQ“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ890-Datenblatt.pdf
R16 200K 2 Vcc I11 R5 560/2512MPCHG AOD407/TO252 3 2 CHG CHG 1 R13 OZ890 5uA DC R11 560/2512 PCHG I12 1 2.2M 18V Cells R15 200K 2 D20 DSG PCHG 5uA DC R84 1K 1 MDSG6 SUP85N10/TO220 3 2 GND PACK- Fig.12 MOSFET drive circuit with P-type charge and pre-charge MOSFET CONFIDENTIAL OZ890 - DS-V1.6 Page 36 OZ890
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MCP2551.pdf
is in permanent dominant state Note 1: This parameter is periodically sampled and not 100% tested. DS21667E-page 12 © 2007 Microchip Technology Inc. MCP2551 2.4 Timing Diagrams and Specifications FIGURE 2-4: TIMING DIAGRAM FOR AC CHARACTERISTICS VDD TXD (transmit data input voltage) 0V VDIFF(CANH, CANL
in „CAN-BUS - Nur empfangen - Was mache ich mit dem TXD Pin am Tranceiver??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7401_IR.pdf
25 µA V = 16V, V = 0V, T = 125 °C DS GS J I Gate-to-Source Forward Leakage 100 nA VGS = 12V GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Qg Total Gate Charge 48 D = 4.1A Q Gate-to-Source Charge 5.1 nC V = 16V gs DS Qgd Gate-to-Drain
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PDF
opb_emc.pdf
:3] F 0 F 0 Mem_CKEN Mem_CEN Mem_WEN Mem_OEN Mem_DQ[0:31] D0 D1 D0 D1 Legend: WR = Write RD = Read DS421_12_011306 Figure 12: OPB EMC Burst Write and Burst Read to 32-bit Asynchronous SRAM 20 www.xilinx.com DS421 January 16, 2006 Product Specification OPB External Memory Controller (OPB EMC) (2.00a)
in „ext. Flash-ROM in C beschreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
f = 1MHz D =25A C iss= Cgs+ Cgd ,Cds SHORTED C = C ) VDS = 44V C rss= Cgd+ C ( VDS = 27V 2000 oss ds gd g 16 VDS = 11V F t ( o e C iss V n 1500 c 12 t u c o p o a 1000 - 8 , t C G Coss , 500 S 4 VG C rss 0 0 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS
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PDF
bts117.pdf
On-state resistance Typ. input threshold voltage R ON = f(T j; I D 3.5A; V =5VIN V = f(T ); I =0.7mA; V =12V IN(th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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PDF
bts117.pdf
On-state resistance Typ. input threshold voltage R ON = f(T j; I D 3.5A; V =5VIN V = f(T ); I =0.7mA; V =12V IN(th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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PDF
BTS117.pdf
On-state resistance Typ. input threshold voltage R ON = f(T j; I D 3.5A; V =5VIN V = f(T ); I =0.7mA; V =12V IN(th) j D DS 250 2.0 Ω V 200 1.6 ) o 175 ) 1.4 S ( D I R 150 V 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 -50 -25 0 25 50 75 100 °C 150 0-50 -25 0 25 50 75 100 °C 150 T T j j Page 6 19.05.2000 BTS 117 Typ. transfer characteristics Typ. output characteristic ID= f(V );IN DS =12V; T =2j°C ID= f(V DS ); T j25°C Parameter: V IN 10 10 10V 6V 5V A A 4V ID 6 I 6 4 4 Vin=3V 2 2 0 0 0 1 2 3 4 5 6 V 8 0 1 2 3 4 V 6 VIN V DS Transient thermal impedance Z thJC = f (tp) parameter :
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IRLIZ44N_IR.pdf
Temperature IRLIZ44NPbF 15 2800 V = 0V, f = 1MHz ID = 25A CGS = C + C , C SHORTED ▯V = 44V Ciss = Cgs gd ds ) DS 2400 rss gd ( ▯VDS = 28V C▯iss Coss = Cds + Cgd e 12 ) t F 2000 o ( V c e 9 n 1600 r i o a C▯oss - p 1200 - C t 6 , a C 800 , S C▯rss G 3 400 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0
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NECCS04393-1.pdf
supply D0 to D7: Data bus V PP: Programming power supply OE: Output enable V SS: Ground PGM: Program 12 Data Sheet U11776EJ2V1DS µPD78P0308, 78P0308Y BLOCK DIAGRAM TO0/P30 P00 TI00/INTP0/P00 16-bit timer/ TI01/INTP1/P01 event counter Port 0 P01 to P05 P07 TO1/P31 8-bit timer/event TI1/P33 counter 1 Port
in „Anschlussbelegung uP D78P0308GF gesucht“ · Analoge Elektronik und Schaltungstechnik ·