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lm2731.pdf
at fixed frequencies of 1.6 • 1.6-MHz (X Option), 0.6-MHz (Y Option) Switching MHz (X option) and 600 kHz (Y option). Frequency • Low R (DS) DMOS FET The use of SOT-23 package, made possible by the minimal power loss of the internal 1.8-A switch, and • Switch Current Up to 1.8 A use of small inductors
in „[V] 5St. Boost Reg. ADJ TI LM2731XMF 1,6Mhz 1,8A Switch (SOT23-5)“ · Markt ·
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PDF
Normen_bersicht.pdf
IEC DieFormelfürSteckverbindernach 61076-4-101lautet: IEC61076-4-113lautet: DR=Leiterplattentiefe+20 DS=Leiterplattentiefe+12,78 (z.B.80+20=100). Anwendungsbeispiel CompactPCI DieFormelfürSteckverbindernach IEC61076-4-101lautet: DS=Leiterplattentiefe+12,14 Die maximale Dicke der Busplatine sollte 6 mm
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PDF
Normenuebersicht.pdf
IEC DieFormelfürSteckverbindernach 61076-4-101lautet: IEC61076-4-113lautet: DR=Leiterplattentiefe+20 DS=Leiterplattentiefe+12,78 (z.B.80+20=100). Anwendungsbeispiel CompactPCI DieFormelfürSteckverbindernach IEC61076-4-101lautet: DS=Leiterplattentiefe+12,14 Die maximale Dicke der Busplatine sollte 6 mm
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PDF
DW01-P_DataSheet_V10.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „TP4056 Parallel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „Solarlampe (China) Spannungsbegrenzung hinzufügen.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „Frage zu 5V-Mini-USB-1A-Lithium-Li-ion-Akku-Lademodul“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P_DataSheet_V10.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „batteriebetriebener ESP32 --- Batterieschutzschaltung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „Frage zu Li-Ion Akku mit TP4056 laden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „Erstes Board - Feedback willkommen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P.pdf
circuits. No external capacitors required. Fortune Semiconductor Corp.TEL: +886-2-2809-4742 1/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006 DW01-P Product Name List Package Overcharge Overcharge Overdischarge Overdischarge Overcurrent detection release detection release
in „RDSon zur Strombegrenzung nutzen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUZ11.pdf
BUZ11 ∪ N - CHANNEL 50V - 0.03 - 33A TO-220 STripFET∧ MOSFET TYPE VDSS R DS(on) ID BUZ11 50 V < 0.04 33 A TYPICAL R DS(on)= 0.03 AVALANCHERUGGED TECHNOLOGY 100%AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 C OPERATINGTEMPERATURE 23 1 APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
High_Power_IGBT_IXGK-GX320N60A3.pdf
GenX3 TM 600VIGBTs IXGK320N60A3 V = 600V CES IXGX320N60A3 IC25 = 320A V ≤ 1.25V CE(sat) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 600
in „IGBT brennt durch - Weit unter spezifkation.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IXGK-GX320N60A3.pdf
GenX3 TM 600VIGBTs IXGK320N60A3 V = 600V CES IXGX320N60A3 IC25 = 320A V ≤ 1.25V CE(sat) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings V T = 25°C to 150°C 600
in „Impulsbelastung von IGBTs -> Parallelschaltung -> Ausgleichswiderstände“ · Analoge Elektronik und Schaltungstechnik ·
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71858.pdf
VGS(th) VDS = VGS ,DI = 250 µA 0.6 1.4 V Gate-Body Leakage GSS VDS = 0 V, VGS = ± 8 V ± 100 nA I V DS = 12 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 12 V, V = 0 V, T = 70 °C 5 µA DS GS J On-State Drain Currenta ID(on) V DS≥ 5 V, VGS = 4.5 V 40 A V GS = 4.5 V,DI = 17 A 0.0045 0.0055 Drain-Source On-State Resistance a R DS(on) Ω V GS = 2.5 V,DI = 14 A 0.0065 0.008 a Forward Transconductance gfs V DS = 6 V,DI = 17 A 80 S a Diode Forward Voltage VSD IS= 2.7 A, VGS = 0 V 0.70 1.1 V b Dynamic Total Gate Charge Q 21 30 g Gate-Source
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tps2020_1_.pdf
1 A/div) IO(OUT)(2 A/div) V = 5 V I I I(IN) O(OUT) O(OUT) RL= 1.2 Ω TA= 25°C 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 t − Time − µs t − Time − µs Figure 18. 1.2-Ω Load Connected to an Enabled Figure 19. 1.2-Ω Load Connected to an Enabled TPS2022 Device TPS2023
in „DC/DC als Sicherung für AT90USB <-> PC“ · Mikrocontroller und Digitale Elektronik ·
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BUK100-50.pdf
clamping voltage V IS0 V; I DM= 1 A; tp≤ 300 s; - - 70 V δ ≤ 0.01 IDSS Zero input voltage drain current V DS= 12 V; VIS 0 V - 0.5 10 A IDSS Zero input voltage drain current V DS= 50 V; VIS 0 V - 1 20 A I Zero input voltage drain current V = 40 V; V = 0 V; T = 125 ˚C - 10 100 A DSS DS IS j R DS(ON) Drain-source
in „MOSFET SCHMILZT“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FB180SA10P.pdf
0.093 - V/°C coefficient Static drain to source on-resistance R (1) V = 10 V, I = 180 A - 0.0065 - DS(on) GS D Gate threshold voltage V GS(th) V DS = VGS, D = 250 μA 2.0 - 4.0 V Forward transconductance gfs V DS = 25 V, D = 180 A 93 - - S V DS = 100 V, VGS = 0 V - - 50 Drain to source leakage current
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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irlr120n.pdf
= 5.0V, D = 6.0A ––– ––– 0.265 V GS= 4.0V, D = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS, D = 250µA gfs Forward Transconductance 3.1 ––– ––– S V DS= 25V, D = 6.0A I Drain-to-Source Leakage Current ––– ––– 25 V DS= 100V, VGS = 0V DSS ––– ––– 250 µA V DS= 80V, VGS = 0V, J = 150°C I Gate-to-Source
in „was ist denn da los.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IOR__IRFR6215.pdf
On-Resistance––– ––– 0.58 V GS= -10V, D = -6.6A TJ= 150°C VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V V DS= VGS ,DI = -250µA gfs Forward Transconductance 3.6 ––– ––– S V DS= -50V, D = -6.6A I Drain-to-Source Leakage Current ––– ––– -25 V DS= -150V, VGS = 0V DSS ––– ––– -250 µA V DS= -120V, VGS = 0V, J = 150
in „wie 24V-Busspannung mit 3,3V schalten?“ · Mikrocontroller und Digitale Elektronik ·
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device_list_hilo_all03_v9-12.pdf
*CAT28F002B *CAT28F002T CAT28F010/I CAT28F010V5/I CAT28F020/I CAT28F512/I CAT28F512V5/I <<DALLAS>> DS1213B (2K*8) DS1213B (8K*8) DS1213C (32K*8) DS1213C (8K*8) DS1213D (128K*8) DS1213D (32K*8) DS1213D (512K*8) DS1213D (8K*8) DS1216B (2K*8) DS1216B/C/E (8K*8) DS1216C/D/E (32K*8) DS1216D/F (128K*8) DS1216F (32K*8) DS1216F (8K*8) DS1220Y/AB/AD DS1225AB/AD/D/E/Y DS1230Y/AB DS1235Y/AB DS1243Y DS1244Y DS1245EE DS1245Y/AB DS1248Y DS1286 DS12887 DS1386 (32K*8) DS1386 (8K*8) DS1387 DS1486 DS1630Y/AB DS1642 DS1643 DS1645EE
in „PROM programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PHOTOMOS_RELAIS_AQY_1A_400MA_60V.pdf
pcs. type 5,000 V 1 batch contains 400 V 120 mA AQY214EH AQY214EHA AQY214EHAX AQY214EHAZ 1,000 pcs. 600 V 50 mA AQY216EH AQY216EHA AQY216EHAX AQY216EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the initial letters of the part number “AQY”, the SMD terminal shape indicator “A” and
in „Optokoppler 4N35 Fragen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
504859-da-01-en-PHOTOMOS_RELAIS_AQY_1A_130MA_350V.pdf
pcs. type 5,000 V 1 batch contains 400 V 120 mA AQY214EH AQY214EHA AQY214EHAX AQY214EHAZ 1,000 pcs. 600 V 50 mA AQY216EH AQY216EHA AQY216EHAX AQY216EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the initial letters of the part number “AQY”, the SMD terminal shape indicator “A” and
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PDF
0900766b811675e1.pdf
pcs. type 5,000 V 1 batch contains 400 V 120 mA AQY214EH AQY214EHA AQY214EHAX AQY214EHAZ 1,000 pcs. 600 V 50 mA AQY216EH AQY216EHA AQY216EHAX AQY216EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the initial letters of the part number “AQY”, the SMD terminal shape indicator “A” and
in „Heizung PT1000 durch pmoddpot ersetzen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
504846-da-01-en-PHOTOMOS_RELAIS_AQY_1A_400MA_60V.pdf
pcs. type 5,000 V 1 batch contains 400 V 120 mA AQY214EH AQY214EHA AQY214EHAX AQY214EHAZ 1,000 pcs. 600 V 50 mA AQY216EH AQY216EHA AQY216EHAX AQY216EHAZ *Indicate the peak AC and DC values. Note: For space reasons, the initial letters of the part number “AQY”, the SMD terminal shape indicator “A” and
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PDF
irf740pbf.pdf
RDS(on) VGS = 10 V D = 6.0 A - - 0.55 Ω Forward Transconductance g V = 50 V, I = 6.0 Ab 5.8 - - fs DS D S Dynamic Input Capacitance C iss VGS = 0 V, - 1400 - Output Capacitance C oss V DS= 25 V, - 330 - pF Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 5 - 120 - Total Gate Charge Qg - - 63
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
D170086D.pdf
and H-ADJ versions, ILOAD = 100 mA, T A= 25˚C Normalized Efficiency Dropout Voltage Output Voltage DS012661-4 DS012661-5 DS012661-3 Line Regulation Load Regulation Output Ripple Voltage DS012661-6 DS012661-7 DS012661-8 Operating Shutdown Switching Frequency Quiescent Current Quiescent Current DS012661
in „LM2528-3.3 & SI4735 & Bluetooth anliegen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „FET Frage (n oder p)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pl2303.pdf
Release Date: July, 2002 ds_pl2303_v14 Revision History Revision Description Date 1.4 • Add Windows CE .NET support feature August 29, 2002 1.3 • Buffer for upstream and downstream data flow – August 01, 2002 change from 96 to
in „USB - seriell Adapter für 1,- EUR!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2304140030_QX-Micro-Devices-QX2304L30T_C219035.pdf
of 14 QX2304_DS03CN (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter TO92 package dimension diagram: QX2304_DS03CN Quancore Electronics Technology
in „IC (SOT23-3?) aus Christbaumkerze identifizieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73832T.pdf
better an open-drain output on the MCP73832. thermal performance. © 2008 Microchip Technology Inc. DS21984E-page 11 MCP73831/2 NOTES: DS21984E-page 12 © 2008 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the device in
in „LiPo-Charger mit MCP73832T“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP73831-2_ENG_TDS.pdf
better an open-drain output on the MCP73832. thermal performance. © 2008 Microchip Technology Inc. DS21984E-page 11 MCP73831/2 NOTES: DS21984E-page 12 © 2008 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the device in
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm2733.pdf
operating fixed frequency of 1.6 • 1.6-MHz (“X”), 0.6 MHz (“Y”) Switching frequency MHz (“X” option) and 600 kHz (“Y” option). • Low R DS(ON) DMOS FET The use of SOT-23 package, made possible by the • Switch current up to 1 A minimal power loss of the internal 1-A switch and use • Wide input voltage 2.7 V
in „[V] 5 St. LM2733YMF Aufwärtswandler 1,6 MHz, 40-V-internem FET SOT-23 [7€)“ · Markt ·
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Datei
DS18S20.c
); // Write to EEPROM // if( !DS18_Copy_Scratchpad()) //return DS18_LeaveModDS18B20(251); // Read from EEPROM to ensure its correct functional behaviour // if( DS18_Recall_EE()) // Refresh scratchpad from EEPROM // //return DS18_LeaveModDS18B20
in „DS18S20 mit Infineon Mikrocontroller“ · Mikrocontroller und Digitale Elektronik ·
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Datei
UDPPerformanceTest.c
UDPPerformanceTest.c * Dependencies: UDP, Ethernet (ENC28J60.c or ETH97J60.c) * Processor: PIC18, PIC24F, PIC24H, dsPIC30F, dsPIC33F, PIC32 * Compiler: Microchip C32 v1.05 or higher * Microchip C30 v3.12 or higher * Microchip C18 v3.30 or higher * HI-TECH PICC-18 PRO 9.63PL2 or higher * Company: Microchip Technology
in „PIC24FJ128 & MRF24WB: mittels UDP-Performance Test diverse Daten per Broadcast versenden“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CL1506-ChipLink.zh-CN.en.pdf
time tOFF_MAX 240 us tON_MAX maximum on time 40 us V ROVP ROVPelectric potential 0.5 V power tube R DS_ON Power tube conduction resVGS=15V/IDS=0.5A 1.9 2.5 Ω BV DS Power tube breakdown voltVGS=0V/IDS=250uA 500 V IDS Power tube leakage currenVGS=0V/V D=500V 1 uA Overtemperature regulation T REG overheat
in „LED-Strahler mit CL1506IR“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlu024n.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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PDF
irlu024N.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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PDF
IRF4905.pdf
A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 I = -64A c D ) a ( s t s e R 1.5 r TJ= 25°C n u 100 O C T = 175°C e ) c J r e u o l 1.0 o - a - t r - i N i 10
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_IRF630_N-Ch_TO-220AB_200V_9_A.pdf
Gate Threshold Voltage VGS(TH) V GS = VDS D I = 250µA 2 - 4 V Zero Gate Voltage Drain Current IDSS V DS = Rated BVDSS , VGS = 0V - - 25 µA o V DS = 0.8 x Rated BDSS , VGS = 0V, TJ= 125 C - - 250 µA On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , GS = 10V 9 - - A Gate to Source Leakage
in „Hilfe bei transistor auswahl/suche“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mosfet_K3673.pdf
C, See to Avalanche Energy Graph*2 Tch=150°C < < < < *3 F=-D , -di/dt=50A/µs, VccDSS, Tch=150°C *4 DS=700V *5 VGS=-30V *6 t=60sec, f=60Hz Electrical characteristics (c=25°C unless otherwise specified) Item Symbol Test Conditions Min. Typ. Max. Units Drain-source breakdown voltaget V(BR)DSS ID=250 A VGS =0V 700 V Gate threshold voltage VGS(th) ID= 250 A VDS=V GS 3.0 5.0 V V DS=700V V GS=0V T c=25°C 25 µA Zero gate voltage drain current IDSS V DS=560V V GS=0V Tch=125°C 250 Gate-source leakage current IGSS V GS=±30V V DS=0V 100 nA Drain-source on-state resistance RDS(on) ID=
in „Mosfet K3673 01“ · Analoge Elektronik und Schaltungstechnik ·
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VRE104c_Thaler.pdf
excitation are some other applications which can benefit from the high accuracy of the VRE104. VRE104DS REV. C SEPT 1994 ELECTRICAL SPECIFICATIONS Vps =+15V, T = 25°C, RL = 10Kotherwise noted. VRE104 MODEL C CA M MA PARAMETERS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS ABSOLUTE MAXIMUM RATINGS
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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PDF
IRF3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Hohe Ströme aus Akku Entladen ?!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS_IRLZ44N-IR.pdf
Temperature IRLZ44NPbF 2800 15 V GS = 0V, f = 1MHz D = 25A C = C + C , C SHORTED ▯V = 44V C iss= Cgs gd ds ) DS 2400 rss gd ( ▯VDS = 28V C▯iss C oss= Cds + Cgd e12 ) t F 2000 o ( V c e 9 n 1600 r i o a C▯oss - a 1200 - C t 6 , a C 800 , S C▯rss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10
in „IRLZ44N Logic Level? Welcher Parameter?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf3205.pdf
–– ––– 8.0 mΩ VGS = 10V,DI = 62AVR V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 44 ––– ––– S VDS = 25V,DI = 62AR ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Erzeugt ein 9V-Printtrafo mehr als 750V?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLZ44N-IR_Reichelt.pdf
Temperature IRLZ44NPbF 2800 15 V GS = 0V, f = 1MHz D = 25A C = C + C , C SHORTED ▯V = 44V C iss= Cgs gd ds ) DS 2400 rss gd ( ▯VDS = 28V C▯iss C oss= Cds + Cgd e12 ) t F 2000 o ( V c e 9 n 1600 r i o a C▯oss - a 1200 - C t 6 , a C 800 , S C▯rss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10
in „PWM-Drehzahlregelung Wasserpumpe mit DC bürstenloser Motor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Hilfe bei Bauteilidentifizierung erbeten (MOSFET, SOT23)“ · Offtopic ·
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IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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APT34F100B2_L_D-1593638.pdf
rss 0 10 0 5 10 15 20 25 0 200 400 600 800 1000 I , DRAIN CURRENT (A) V , DRAIN-TO-SOURCE VOLTAGE (V) D DS Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage 16 140 D = 18A ) ( 14 A 120 E ( A N T 12 E 100 O
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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MCP1640.pdf
2011 Microchip Technology Inc. DS22234B-page 25 MCP1640/B/C/D NOTES: DS22234B-page 26 2011 Microchip Technology Inc. MCP1640/B/C/D APPENDIX A: REVISION HISTORY Revision B (March 2011) The following is the list of modifications: 1.
in „ESP32-C6 an 18650 Akku betreiben“ · Mikrocontroller und Digitale Elektronik ·