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tps2020_1_.pdf
T = 125°C, I = 1.8 A 51 61 r Static drain-source on-state resistance I(IN) J O mΩ DS(on) V = 5 V, T = 25°C, I = 0.18 A 30 34 I(IN) J O VI(IN)= 5 V, TJ= 85°C, IO = 0.18 A 35 41 VI(IN)= 5 V, TJ= 125°C, IO = 0.18
in „DC/DC als Sicherung für AT90USB <-> PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1640.pdf
VIN V OUTP 976 K + CIN C OUT N 4.7µF EN VFB 10 µF O I 309 K L - P GND SGND Efficiency vs. I OUT for 3.3V OUT 100.0 VIN 2.5V ) % 80.0 y c e c VIN 0.8V VIN 1.2V f E 60.0 40.0 0.1 1.0 10.0 100.0 1000.0 Output Current (mA) DS22234B-page
in „ESP32-C6 an 18650 Akku betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf3205.pdf
1MHz 20 C = C + C , C SHORTED ID = 59A 7000 iss gs gd ds ) Crss = C gd V V DS = 44V Coss = C ds+ C gd ( V DS = 28V 6000 g16 V = 11V F C iss t DS ( o e 5000 V c e12 a r i 4000 Coss u c S p - a 3000 - 8 , t C a
in „Schaltung zu Kondensatorentladungsschweißen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RequiresAcrobat6-5.pdf
ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 V DS, Drain-to-SourceVoltage(V) Q G Total GateCharge(nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OB2502.PDF
Temperature ) 7.50 ( 7.30 N ( 7.10 _ O 6.90 V 6.70 U 6.50 -40 -10 20 50 80 110 140 Temperature( ℃ Vref(V) vs Temperature Vocp(V) vs Temperature 2.600 0.600 2.540 0.560 V 2.480 V 0.520 f p r 2.420 o 0.480 V V 2.360 0.440 2.300 0.400 -40 -10 20 50 80 110 140 -40 -10 20 50 80 110 140 Temperature( ℃ ) Temperature( ℃ Icable(uA)vsTemperature 48 ) 46.4 A ( 44.8 b c 43.2 I 41.6 40 -40 -10 20 50 80 110 140 Temperature( ) ℃ ©On-Bright Electronics Confidential Datasheet OB_DOC_DS_2502xA2 - 6 - OB2502x High Precision CC/CV Primary-Side Power Switch OPERATION DESCRIPTION
in „SNT Gartenbeleuchtung defekt, pulst aber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
VGS = 0V, f = 1MHz D Ciss = Cgs + C gd , C ds SHORTED ) V DS = 44V Crss = C gd ( V = 28V 5000 Ciss Coss = C ds+ C gd e 12 DS g ) l F o ( 4000 V e e 9 n r t o c 3000 C oss S p o a - 6 C t , 2000 a C , S Crss G3 1000 V FOR TEST CIRCUIT SEE
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
VGS = 0V, f = 1MHz D Ciss = Cgs + C gd , C ds SHORTED ) V DS = 44V Crss = C gd ( V = 28V 5000 Ciss Coss = C ds+ C gd e 12 DS g ) l F o ( 4000 V e e 9 n r t o c 3000 C oss S p o a - 6 C t , 2000 a C , S Crss G3 1000 V FOR TEST CIRCUIT SEE
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf7389.pdf
Voltage (V) DS Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 ) ) ( ( t t e e r r T J 25°C C u i T = 150°C C r J r TJ= 150°C D u 10 e 10 o r - v TJ= 25°C - e i , r D D -S ,D -
in „Treiber für Push-Pull 12V?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
Voltage (V) DS Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics 100 100 ) ) ( ( t t e e r r T J 25°C C u i T = 150°C C r J r TJ= 150°C D u 10 e 10 o r - v TJ= 25°C - e i , r D D -S ,D -
in „Brushless DC Motorsteureung Dysfunktion AVR444“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
176141-da-01-en-DS_1621_1621S.pdf
DS1621 DS1621 Digital Thermometer and Thermostat FEATURES PIN ASSIGNMENT Temperaturemeasurementsrequirenoexternalcom- ponents SDA 1 8 VDD SCL 2 7 A0 Measures temperatures from –55⋅C to +125⋅C in TOUT 3
in „Temperatursensor DS1621 über I²C ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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Datei
test.ino.asm
::write_low: if (msg.data[msg.position] & (1 << i)) { 3b0: e0 91 62 01 lds r30, 0x0162 ; 0x800162 <ds+0x9> 3b4: 80 91 5f 01 lds r24, 0x015F ; 0x80015f <ds+0x6> 3b8: 90 91 60 01 lds r25, 0x0160 ; 0x800160 <ds+0x7> 3bc: e8 0f add r30, r24 3be: f9 2f mov r31, r25 3c0: f1 1d adc r31, r1 3c2: 80 81 ld r24
in „Atmega328 1-Wire mit Timer CTC/PWM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MRF89XAM8A.pdf
to provide a low impedance during startup sequences. © 2010 Microchip Technology Inc. Preliminary DS70651A-page 9 D M 7 FIGURE 2-2: MRF89XAM8A SCHEMATIC 6 R A p F e 8 0 9 X A M 8 A P e m n a y Note: Designators not used: C6, L5 © 0 0 c c p e h l y n . MRF89XAM8A TABLE 2-1: MRF89XAM8A BILL OF MATERIALS
in „Was darf man von einer PCB-Antenne erwarten?“ · HF, Funk und Felder ·
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PDF
jkem_pwb_productrange.pdf
Activator. provement of the whole Perfekto process. With the use The unique optimum process PERFEKTO A.C.S gives perfect adhesion, no blisters and excellent coverage on exposed P.I. ACID COPPER PLATING For special plating demands J-KEM has the optimum solution J-PLATE Cu 90 H J-PLATE Cu 400 J-PLATE PPR
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PDF
AP3031.pdf
vs. Output Current Efficiency vs. Input Voltage 90 95 85 90 80 85 ) 75 ) 80 ( ( y 70 y n n 75 i i f 65 f 70 E E 60 65 o o 55 VIN5V, V OUT10V, T =A25 C 60 VOUT=10V, I OUT260mA,T =+A5 C C =10 F, C =0.47 F, L=4.7 H C =10 F, C =0.47 F, L=4.7 H 50 IN OUT 55 IN
in „Verständnisfrage Datenblatt AP3031 PMIC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DAC014N120Z5.pdf
Drain Current ID,pulse 400 A Total Power Dissipation PD 600 W Storage Temperature Range TSTG -55 to +175 °C Operating Junction Temperature Range TJ -55 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may
in „Doppelter Sourceanschluss bei SiC-Mosfets“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Microchip_AppNote_00994a.pdf
smaller shunts for meter designs, with higher dynamic range requirements. As an example, a VPEAK 5(80) A Class 1 meter with a meter constant of 100 imp/kWh. C F1=2.4 The 80A maximum current could easy dissipate over C F21.9 2W through a larger shunt, so the goal is to choose as low a value shunt as is
in „Strom 10A bis 300A messen mit Tiny26“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lt1157.pdf
S 3.3V, VIN1= VIN2= 0V (Note 1) 3 10 A Quiescent Current ON V S 3.3V, VIN 3.3V (Note 2) 80 160 A V S= 5V, VIN 5V (Note 2) 180 400 A V INH Input High Voltage 70%× V S V V INL Input Low Voltage 15%× V S V IIN Input Current 0V ≤V INV S ±1 A C IN Input Capacitance 5 pF V GATE– VS Gate Voltage
in „3V Gate-Treiber gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1337-DS1337C.pdf
Disabled) CCTDDR 2 of 16 DS1337 I C Serial Real-Time Clock AC ELECTRICAL CHARACTERISTICS (VCC = 1.8V to 5.5V, TA= -40°C to +85°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Fast mode 100 400 SCL Clock Frequency fSCL
in „[V] DALLAS RTCs : 10x DS1337S+ SO8 und 4x DS1337U+ 8 uSOP“ · Markt ·
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PDF
t1610.pdf
3.3 kΩ, T = 125 °C All Min. 0.2 V GD D DRM L j (2) IH IT= 500 mA Max. 25 50 mA I - III - IV Max. 40 60 IL IG= 1.2 GT mA II Max. 80 120 DS2114 - Rev 11 page 2/18 T1610, T1635, T1650, BTA16, BTB16 Characteristics BTA16 BTB16 Symbol Parameters Quadrant Unit C B (2) dV/dt V D 67 % V DRM gate open, j = 125 °C Min. 200 400 V/µs (dV/dt)c2) (dI/dt)c = 7 A/msj T = 125 °C Min. 5 10 V/µs 1. Minimum IGT is guaranteed at 5 % GT Ix. 2. For both polarities of A2 referenced
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PDF
APM2601.pdf
Delay Time d(ON) V DD10V , I DS1A , 8 18 T r Turn-on Rise Time 4 10 V GEN-4.5V , RG=6Ω ns d(OFF) Turn-off Delay Time 20 45 T Turn-off Fall Time f 7 16 Ciss Input Capacitance V GSV 550 C oss Output Capacitance V DS-15V 265 pF C Reverse
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6344pbf.pdf
DS= VGS ID= 10μA IDSS ––– ––– 1.0 V DS=24V, V GS= 0V Drain-to-Source Leakage Current μA ––– ––– 150 V DS= 24V, VGS = 0V, J = 125°C I Gate-to-Source Forward Leakage ––– ––– 100 V = 12V GSS nA GS Gate-to-Source
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
DS= VGS ID= 10μA IDSS ––– ––– 1.0 V DS=24V, V GS= 0V Drain-to-Source Leakage Current μA ––– ––– 150 V DS= 24V, VGS = 0V, J = 125°C I Gate-to-Source Forward Leakage ––– ––– 100 V = 12V GSS nA GS Gate-to-Source
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF_1404_S.pdf
V VDS = 32V C oss= Cds + Cgd e 16 VDS = 20V g F l ( 8000 Ciss V e e 12 n r i 6000 o a S p t C e 8 , 4000 a C Coss G , 2000 G 4 V FOR TEST CIRCUIT Crss SEE FIGURE 13 0 0 1 10 100 0 40 80 120 160 200 240 V DS , Drain-to-Source
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RT8477A.pdf
Technology Corporation. All rights reseis a registered trademark of Richtek Technology Corporation. DS8477A-01 December 2014 www.richtek.com 5 RT8477A Typical Application Circuit D1 VIN R1 4.5V to 50V C1 0.1 C4 R5 10µF 1µF 10 RT8477A .LEDs 1 VCC ISP 2 C6 L1 1µF 22µH ISN 3 Analog Dimming 5 CTL DRV 7 M1
in „Frage zum LED-Treiber RT8477A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUZ11-FSC.PDF
PULSE DURATION (s) FIGURE 3. MAXIMUMTRANSIENTTHERMAL IMPEDANCE 103 60 PULSE DURATION = 80µs OPERATION INTHIS PD= 75W VGS = 20V DUTY CYCLE = 0.5% MAX AREA MAY BE LIMITED 50 ) BY DS(ON) A 10V ( 2.5µs ( T 102 N40 E 10µs E R R VGS = 8.0V U U30 C 100µs C VGS = 7.5V I I VGS = 7.0V A A VGS = 6.5V
in „BUZ11 parallel als regelbarer 200 Watt Widerstand bis 20V 10A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MIC5239_Data.pdf
to 100 kHz, V = 3.0V, Output Noise en — 160 — µVRMS OUT CL= 3.3 µF 2021 Microchip Technology Inc. DS20006544A-page 3 MIC5239 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical CharacteristicsIN= VOUT + 1V; EN ≥ 2.0V;OUT = 100 µA; J = +25°C, bold values valid for –40°C ≤ TJ≤ +125°C; unless noted. (Note
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PDF
20002234D.pdf
4.7 µF EN VFB 10 µF N - 309 k L - PGND S GND Efficiency vs. I OUT for 3.3V OUT 100.0 VIN 2.5V ) % 80.0 ( c e c V IN0.8V V IN1.2V f E 60.0 40.0 0.1 1.0 10.0 100.0 1000.0 Output Current (mA) DS20002234D-page 2 2010-2015 Microchip Technology Inc. MCP1640/B/C/D 1.0 ELECTRICAL † Notice: Stresses above
in „NRF24L01+ durch MCP1640 gestört?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2n3958.pdf
On-Resistance vs. Drain Current 100 1 k ) Ω e n 80 t 800 i n e a - G 60 n g VGS(off)–3 V e 600 l r V = –2 V o o GS(off) – –2 V - V 40 g R i 400 A A + fs L r V 1 ) R L os D –3 V ) 20 Assume VDD = 15 V,DS = 5 V ( 200 D R + 10 V r L ID 0 0 0.01 0.1 1 0.01
in „JFET prüfen mit transistortester“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2n3958.pdf
On-Resistance vs. Drain Current 100 1 k ) Ω e n 80 t 800 i n e a - G 60 n g VGS(off)–3 V e 600 l r V = –2 V o o GS(off) – –2 V - V 40 g R i 400 A A + fs L r V 1 ) R L os D –3 V ) 20 Assume VDD = 15 V,DS = 5 V ( 200 D R + 10 V r L ID 0 0 0.01 0.1 1 0.01
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PDF
mcp6004.pdf
Mode Input Voltage at V DD = 1.8V. Output Voltage. 0 35 V DD= 5.5V t ) e µ -100 r 30 +ISC VDD= 5.5V ( C g -200 i 25 l u o -300 i ) 20 V C A e -400 TA= -40°C r ( 15 -SC, DD = 5.5V s o O TA= +25°C S -SC, DD= 1.8V t -500 TA= +85°C t 10 p TA= +125°C p I -600 u 5 O +ISC VDD= 1.8V -700 0 -0.5 0.0 0.5 1.0 1.5
in „Nichtinvertierender Operationsverstärker“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
A300_25AA640A_25LC640A-MIC.pdf
write sequence and ends when the internal write cycle is complete. © 2008 Microchip Technology Inc. DS21830D-page 3 25AA640A/25LC640A TABLE 1-2: AC CHARACTERISTICS (CONTINUED) Industrial (I)TA = -40°C to +85°C VCC = 1.8V to 5.5V AC CHARACTERISTICS Automotive (E): T= -40°C to +125°C VCC = 2.5V to 5.5V
in „SPI funktioniert nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
rt8016_richtek_FT8.pdf
lookingintotheLXpinisafunctionofbothtopandbottom o MOSFET R and the duty cycle (DC) as follows : a 500 DS(ON) i WDFN-6L 2x2 i 400 R SW = RDS(ON)TOPx DC + R DS(ON)BOT x (1−DC) D e 300 TheR DS(ON)forboththetopandbottomMOSFETscanbe w obtained from the Typical Performance Characteristics P 200 curves. Thus,
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PDF
BTB16-600C.pdf
IV 40 50 IL IG= 1.2 GT Max. mA II 80 100 dV/dt (2) V D 67 % V DRM gate open, j = 125 °C Min. 200 400 V/µs (dV/dt)c(2) (dI/dt)c = 5.3 A/ms, T = 125 °C Min. 5 10 V/µs j 1. Minimum I GT is guaranteed at 5 % GT max. 2. For both polarities of
in „Leistung für Gatewiderstand Triac“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
fm600tu-07a_e.pdf
6 7.3 V IGSS Gate leakage current VGS = VGSS , DS = 0V — — 1.5 µA rDS(ON) Static drain-source D = 300A T ch= 25°C — 0.53 0.73 (chip) On-state resistance VGS = 15V T ch= 125°C — 0.87 — mΩ V DS(ON) Static drain-source D = 300A T ch= 25°C — 0.16 0.22 (
in „Wechselrichter mit MOSFET Endstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LT3800.pdf
X7R Si7370DP FB B160 ×2 ×2 VC PGND R3 62k C10 R5 SENSE– SENSE+ C9 100pF 47k SGND 470pF RS 0.01Ω D2 1N4148 VOUT DS1 C6 + 5V AT 10A DS2 MBRO520L M3 10μF C5 MBRO520L 1/2 Si1555DL 6.3V 220μF Efficiency and Power Loss X7R ×2 3800 TA02a 100 12 C4 M4
in „LT3800 Frage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
WS3441-WINSEMI.pdf
WS3441 ProductDescription Package Information SOP8 Package Outline Dimensions A 1 B B B 1 D D A1 A2 C4 0.* 0.125±0. 05 A3 球形标记 R2 θ 3 θ 3 R1 2 4 1 C θ θ C C 1 C Winsemi Dimensions in Millimeters Dimensions in Inches Symbol Min Max Min Max A 4.70 5.10 0.185 0.201 B 3.70 4.10 0.146 0.161 C 1.30 1.50 0.051 0.059 A1 0.35 0.48 0.014 0.019 A2 1.27TYP 0.05TYP A3 0.345TYP 0.014TYP B1 5.80 6.20 0.228 0.244 B2 5.00TYP 0.197TYP C1 0.55 0.70 0.022 0.028 C2 0.55 0.70 0.022 0.028 C3 0.05 0.225 0.002 0.009 C4 0.203TYP 0.008TYP D 1.05TYP 0.041TYP D1 0.40 0.80 0.016 0.031 WINSEMMICROELECTRONIWINSEMMICROELECTRONIWINSEMMICROELECTRONIWINSEMMICROELECTRONIWINSEMMICROELECTRONICS
in „LED Deckenleuchte integriert - glimmt nur leicht“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
bios6V127.asm
==== ; ; Disk Parameter Block ; ;==================================================== ; ; dpb0 für 80 Spur Laufwerke ; Blockgroesse 2k ; dpb0: dw 20h ; Sectors per Track db 04h ; Block shift db 0Fh ; Block Mask db 0h ; Extnt Mask dw 97h ; Disk Size-1 dw 3fh ; Directory max. db 0c0h ; Alloc0 db 00h ;
in „Suche MOPPEL Projekt in Heft oder .PDF“ · Mikrocontroller und Digitale Elektronik ·
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PDF
eeprom_24lc65_i2c.pdf
S A WORD R DATA n T R BYTE ADDRESS (1) ADDRESS (0) T BYTE O T P SDA LINE 0 0 0 P S S A A A A N BUS C C C C O ACTIVITY K K K K A C K FIGURE 4-5: SEQUENTIAL READ S T BUS ACTIVITY CONTROL O MASTER BYTE DATA n DATA n + 1 DATA n + 2 DATA n + X P SDA LINE P A A A A N BUS ACTIVITY C C C C O K K K K A C K DS21073G-page
in „64K EEPROM 24LC65 Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZXBM5210.pdf
Document number: DS36765 Rev. 1 - 2 ZXBM5210 Thermal Performance (1) Package Type: SO-8 MSOP8-EP Power Dissipation De-rating Curve (Note 11) TA (°C) -40 0 25 50 60 70 80 85 90 95 100 105 110 120 125 130 140 150 P DmW) 1043 1043 1043 835 751 668 584 543 501 459 417 376 334 250 209 167 83 0 1200 o o T Rthja= 120 C/WRthjc = 19.9 C/W C 1000 ) U m D n 800 O i a 600 R s P i r 400 w W o E P 200 N 0 -40 -20 0 20 40 60 80 100 120 140 160 Temperature (°C) SO-8 Thermal Derating Curve Note: 11. SO-8 soldered to minimum
in „Overcurrent Protecion (OCP) bei integrierten Voll-/Halbbrücken“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mc33151u.pdf
is with Respect V = 12 V N C = 1.0 nF to the Logic Input Lower Threshold N to the Logic Input Lower Threshold C = 1.0 nF T 160 T = 25⋅C T 160 L G A G TA= 25⋅C P P O O P 120 P 120 U U T T U 80 U 80 E E I I D 40 D 40 ,) ,) U U / 0
in „Mosfett-Driver Art-Kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF1404.pdf
isSdoDinated by L +L ) Notes: Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) Cosseff. is a fixed capacitance that gives the same charging time Starting T = 25°C, L = 85µH J as Cosswhile DS is rising from 0 to 8DSSV
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
05_TLV272CS-13.pdf
125°C 55 — — P Common Mode Rejection RS= 50Ω +25°C 65 80 — CMRR VDD= 5V dB W Ratio -40°C to +125°C 62 — — E VIC= -5 toDD-1.35V, +25°C 69 85 — VDD= ±5V N RS= 50Ω -40°C to +125°C 66 — — Input Characteristics
in „TLV272 Rail to Rail Problem DIODES“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.ino
is not a DS18x20 family device."); return; } ds.reset(); ds.select(addr); ds.write(0x44,1); // start conversion, with parasite power on at the end delay(1000); // maybe 750ms is enough, maybe not // we might do a ds.depower() here, but the reset will take care of it. present = ds.reset(); ds.select(addr); ds.write(0xBE); // Read Scratchpad Serial.print(" Data = "); Serial.print(present,HEX); Serial.print(" "); for
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
l6203.pdf
Supply Current EN = H V IN= L 10 15 mA EN = H V IN= H IL= 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA c Commutation Frequency (*) 30 100 KHz Tj Thermal Shutdown 150 ⋅C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 s = 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON
in „L6203 und 100% Einschaltdauer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6203.pdf
Supply Current EN = H V IN= L 10 15 mA EN = H V IN= H IL= 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA c Commutation Frequency (*) 30 100 KHz Tj Thermal Shutdown 150 ⋅C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 s = 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON
in „Eingangsfrequenz Vollbrückentreiber L6203“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6202_L6203_STM.pdf
Supply Current EN = H V IN= L 10 15 mA EN = H V IN= H IL= 0 10 15 mA EN = L ( Fig. 1,2,3) 8 15 mA c Commutation Frequency (*) 30 100 KHz Tj Thermal Shutdown 150 ⋅C T d Dead Time Protection 100 ns TRANSISTORS OFF DSS Leakage Current Fig. 11 s = 52 V 1 mA ON RDS On Resistance Fig. 4,5 0.3 0.55 V DS(ON
in „L6203 DMOS Full Bridge Driver testen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
e1529_k8v.pdf
128M NANYA NT128D64SH4B1G-5T NANYA SS NT5DS16M16BT-5T 512M NANYA N512D64S8HB1G-5T NANYA DS NT5DS32M8BT-5T 256M Hynix HYMD232646B8J-D43AA Hynix SS HY5DU56822BT-D43 256M Kingston KVR400X64C3A/256 Hynix SS HY5DV56822BT-D43 512M Kingston KVR400X64C3A/512 Hynix DS HY5DV56822BT-D43 512M Winbond W9451GCDB-5 Winbond DS W942508CH-5 256M Kingston KVR400X64C25/256 Winbond SS W942508BH-5 256M ADATA MDOWBFF3G31JB1EAE Winbond SS W942508BH-5 512M TwinMOS M2G9J16AGATT9F081AA4T