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PDF
21058F.PDF
time THIGH 4000 — 600 — ns Clock low time TLOW 4700 — 1300 — ns SDA and SCL rise time TR — 1000 — 300 ns Note 1 SDA and SCL fall time TF — 300 — 300 ns Note 1 START condition hold timeHDSTA 4000 — 600 — ns After this period the first clock pulse is generated START condition setup TSUSTA 4700 — 600 —
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PDF
LTC4414_Power_Manegement.pdf
to obtain the desired V while operating at full voltagetransientscanbegeneratedunder somestart-up DS(ON) DS conditions such as connecting a supply input to a hot loadcurrentandanachievableV .TGSMOSFETnormally power source. To reduce the Q and prevent these tran- operates in the linear region and acts
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PDF
SW6007.pdf
支持 BC1.2 DCP 模式 • QFN-32(4x4mm) 封装 支持苹果/三星模式 • Lightni解密 内置 Lightning 解密功能 Mode: iSW_Release_DS066_第 1 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. 4. 功能框图 Mode: iSW_Release_DS066_v1.0 第 2 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO.,
in „I2C: Li/ion Mobile Power Shield SW6007<->SW6115“ · Mikrocontroller und Digitale Elektronik ·
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RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no
in „Temperatursteuerung“ · Markt ·
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PDF
EUA2005.pdf
Shutdown current V(SHUTDOWN )=0.35V, 0.5 2 µA VDD 2.5V to 5.5V VDD 2.5V 700 Static drain-source on-state rDS(on) resistance VDD 3.6V 500 mΩ V = 5.5V 400 DD Output impedance in V(SHUTDOWN )=0.4V >1 kΩ SHUTDOWN f(sw) Switching frequency VDD 2.5V to 5.5V 200 250 300 kHz Resistance from shutdown toGND 300 kΩ DS2005
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tc4420.pdf
TC4429IJA Inverting 8-Pin CerDIP – 25°C to +85°C TC4429MJA Inverting 8-Pin CerDIP – 55°C to +125°C 300 mV OUTPUT INPUT 4.7V TC4420 GND EFFECTIVE INPUT C = 38 pF © 2001 Microchip TechnoloDS21419A TC4420/9-6 10/18/96 6A HIGH-SPEED MOSFET DRIVERS TC4420 TC4429 ABSOLUTE MAXIMUM RATINGS* Storage Temperature
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PDF
STP16NF_--_156110-da-01-en-PWRMOS_60V_16A_STP16NF06L_STM.pdf
Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
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PDF
TXSTM-POWERMOSFET-STX-16NF06L_EN.pdf
Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „TLC5940 (Arduino Mega) flackert. Wie Kondensatoren einsetzen?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Multi_DS18x20.ino
der Sensoren und Index der Sensoren im Userdata des Sensors zurücksetzen Limit = -300.0; sensors.requestTemperatures(); oneWire.reset_search(); while(oneWire.search(DS1820Address)) { Limit = max(Limit, sensors.getTempC(DS1820Address)); sensors.setUserData(DS1820Address, 0); } Serial.print
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PDF
BST-BMP180-DS000-07.pdf
BMP180 Data sheet Document revision 2.3 Document release date 25 May 2011 Document number BST-BMP180-DS000-07 Technical reference code(s) 0 273 300 244 Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the
in „Suche Projektpartner für Kalmanfilter-Implementierung“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
BUZ71.pdf
= 0V 50 - - V DSS D GS Gate to Threshold Voltage V V = V , I = 1mA (Figure 9) 2.1 3 4 V GS(TH) GS DS D Zero Gate Voltage Drain Current I T = 25 C, V = 50V, V = 0V - 20 250 µA DSS J DS GS TJ= 125 C, V DS = 50V, GS = 0V - 100 1000 µA Gate to Source Leakage Current IGSS VGS = 20V, VDS = 0V - 10 100 nA
in „BUZ 71 Wie anschliessen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf540n.pdf
––– ––– 44 mΩ VGS = 10V,DI = 16A▯R V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 21 ––– ––– S VDS = 50V,DI = 16AR ––– ––– 25 V = 100V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 80V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet vor negativer Spannung / Wechselspannung schützen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
625945.pdf
Type (π-MOSVI) 2SK3569 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: R DS (ON) = 0.54Ω (typ.) • High forward transfer admittance: |Y fs = 8.5S (typ.) • Low leakage current: IDSS = 100 μA (V DS = 600 V) • Enhancement mode: V th= 2.0~4.0 V (VDS = 10 V, D = 1 mA) www.DataSheet4U.com
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2sk1402.pdf
breakdown voltage K1402A 650 — — Gate to source breakdown V ±30 — — V I = ±100 µA, V = 0 (BR)GSS G DS voltage Gate to source leak current IGSS — — ±10 µA V GS= ±25 V, V DS= 0 Zero gate voltage K1402 I — — 250 µA V = 500 V, V = 0 DSS DS GS drain current K1402A V = 550 V, V = 0 DS GS Gate to source cutoff
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfp260n.pdf
On-Resistanc––– ––– 0.04 VGS = 10V,DI = 28A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 27 ––– ––– S VDS = 50V,DI = 28A ––– ––– 25 V = 200V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 160V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS84_P-Kanal_FET.pdf
Temperature D = –250 µA,Referenced to 25°C mV/°C ∆T J Coefficient –48 IDSS Zero Gate Voltage Drain Current V DS= –50 V, V GS= 0 V –15 µA VDS= –50 V,V GS = 0 V TJ= 125°C –60 µA IGSS Gate–Body Leakage. V GS = ±20 V, V DS= 0 V ±10 nA On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS= V GS ID= –1 mA
in „FET-Schaltung für Relais-Steuerung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7314.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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DG506_507_508_509A.pdf
- +15 V VANALOG Drain-Source ON SequenceEach I =S-200µA, V = D10V - 270 400 - 270 450 Ω Resistance,DS(ON) Switch ON V = 0.8V S = -200µA, VD= -10V - 230 400 - 230 450 Ω AL VAH = 2.4V r Matching -10V ≤ V ≤ +10V - 6 - - 6 - % DS(ON) S Between Channels DS(ON)MAX – DS(ON)MIN ∆r DS(ON) = - DS(ON)AVG Source
in „Bestimmtes Bauteil gesucht zur Signalverteilung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
xfft_ds260.pdf
X-Ref Target - Figure 21 10 0 -10 -20 -30 -40 -50 -60 d -70 -80 -90 -100 -110 -120 -130 -140 100 200 300 400 500 600 700 800 900 1000 FFT BinNumber Figure 21: Input Data: 16 Bits DS260 March 1, 2011 www.xilinx.com 51 Product Specification LogiCORE IP Fast Fourier Transform v7.1 X-Ref Target - Figure 22
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
irl2203ns.pdf
6000 VGS = 0V, f = 1MHz D = 60A Ciss= Cgs + Cgd ,Cds SHORTED C = C ) V = 24V 5000 Crss= Cgd + C ( V DS= 15V oss ds gd g 12 DS F t ( 4000 o e V n Ciss c 9 t u c 3000 o p o a - 6 , 2000 Coss t C G , S 3 1000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 20 40 60 80 V DS , Drain-to-Source Voltage
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IRF3205S.pdf
Temperature www.irf.com 3 IRF3205S/IRF3205L 6000 V = 0V, f = 1 MHZ 16 I = 62A GS D Ciss= Cgs + Cgd, ds SHORTED V 14 V DS= 44V 5000 Crss = Cgd ( V DS= 27V C = C + C g V DS= 11V ) oss ds gd l 12 F4000 o e Ciss V 10 n r i u c3000 S 8 p o C - 6 ,2000 Coss a C G , 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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irfp2907.pdf
20µs PULSE WIDTH TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
20µs PULSE WIDTH TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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oncilla_schaltplaene.pdf
1N5408 R5106 68R 2 1 5 6 C5101 C5103 1n 2kV 1n 2kV J5102 F5101 R5101 250mAT 283V 1 10R 160mA 2 1 2 +300V 160mA max. V5101A 1 2 6080 + + R5117 + C5105 R5102 R5105 470K C5102 C5104 250uF/450V 100K / 2W 68R 1n 2kV 1n 2kV 2 3 2 1 R5113 D5103 D5104 C5108 C5109 C5110 R5118 DS5101 27K C 1N5408 1N5408 100uF 400V
in „Unbekannter Geräteeinschub (Impulszähler)“ · Mikrocontroller und Digitale Elektronik ·
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TN2404K.pdf
unless otherAise noted) Parameter Symbol TN2404K TN2404KL/BS107KL Symbol Drain-Source Voltage V 240 DS V Gate-Source Voltage VGS ± 20 T A 25 °C 0.2 0.3 Continuous Drain Current (J = 150 °C) T = 70 °C D 0.16 0.25 A A Pulsed Drain Current (t = 300 µs) IDM 0.8 1.4 T A= 25 °C 0.36 0.8 Maximum Power Dissipation
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PT4515deutsch.pdf
0,560 0,018 0,022 a1 0,450 0,510 0,018 0,020 D 0,360 0,460 0,014 0,018 d1 0,350 0,410 0,014 0,016 D 4.300 4.700 0,169 0,185 D1 1.700REF 0,067REF UND 4.000 4.400 0,157 0,173 E1 2.300 2.700 0,091 0,106 Und 1.500 BSC 0,059 BSC L1 0,800 1.200 0,031 0,047 Wichtige Aussage China Resources Silicon Technology WWW.CRPOWTECH.COM
in „LED mit mehr als 16V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP738312.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2014 Microchip Technology Inc. DS20001984G-page 9 MCP73831/2 NOTES: DS20001984G-page 10 2005-2014 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
05_TLV272CS-13.pdf
Signal Response — 26 — Crosstalk vs. frequency 27 TLV271/ TLV272 7 of 17 July 2014 Document number: DS35394 Rev. 6 - 2 www.diodes.com © Diodes Incorporated TLV271/TLV272 Typical Performance Characteristics (cont.) 0 300.0 VDD=5V,IC= DD/2 V = +2.7V 270.0 V = V /2, R = 50Ω DD O DD S ) VDD= ±5V ) 240.0 V
in „TLV272 Rail to Rail Problem DIODES“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO4459.pdf
Drain-Source Breakdown Voltage ID=-250 A, V GSV -30 V V =-30V, V =0V -1 IDSS Zero Gate Voltage Drain Current DS GS A TJ=55°C -5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V ±100 nA V Gate Threshold Voltage V =V I =-250 A -1 -1.5 -2.5 V GS(th) DS GS D ID(ON) On state drain current V GS10V, V =DSV -30 A V GS10V, I =D6.5A 33 42 m R DS(ON) Static Drain-Source On-Resistance V GS=-4.5V, D =-5A 56 60 m gFS Forward Transconductance V DS=-5V, D =-6.5A 14 S V Diode Forward Voltage IS=-1A,V GSV -0.8 -1 V SD IS Maximum Body-Diode Continuous
in „P-Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCAC75N06YBTP-datasheet-3.pdf
60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
in „Suche Ersatz für obsoleten MOSFET MCAC75N06YB-TP (oder Bezugsquelle)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
B1nn.pdf
Data (n + 1)Data (n + 2) Data (n + x) P SDA Line 1 P A A A A N Bus Activity C C C C o K K K K C K DS21711J-page 12 © 2009 Microchip Technology Inc. 24AA01/24LC01B 9.0 PACKAGING INFORMATION 9.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 24LC01B T/XXXNNN I/Pe313F YYWW 0527 8-Lead
in „IPL Lampe Blitzcounter rücksetzten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
handbuch_tx-ds575x_manual_e.pdf
INPUTSAND 4A/V INPUTS 4 S-VIDEO INPUTS, 2 S-VIDEO OUTPUTS AUTO DIGITAL/ANALOG SIGNAL DETECTION & 75/300 ohm antenna Conversion plug 1 SWITCHING adapter 1 Use this plug if the power cord plug of the TX-DS575X “POWER ON” VOLUME FUNCTION does not fit your AC outlet. POWERFUL BACKLIT LEARNING REMOTE WITH
in „Verstärker ONKYO TX-DS 575 funktioniert nicht mehr richtig“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BF256_ON.pdf
Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (–I = –1.0 Adc, V = 0) –V 30 – — Vdc G DS (BR)GSS Gate–Source Voltage (DS = 15 Vdc,D= 200 A) –V GS 0.5 — 7.5 Vdc Gate Reverse Current (–VGS = 20 Vdc, DS = 0) –IGSS — — 5.0 nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current (Note 1.) (VDS
in „BF256, Pinbelegung unterschiedlich“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon_IRLB8721_DataSheet_v01_01_EN-3363432.pdf
On-Resistance vs. Temperature www.irf.com 3 IRLB8721PbF 10000 14 V GS = 0V, f = 1 MHZ ID= 25A C iss= gs + gd, dsSHORTED ) C = C ( 12 V DS= 24V rss gd g V = 15V ) C oss= ds + gd t DS F Ciss o 10 ( 1000 V c r 8 a Coss u c S a t 6 a Crss e , 100 a C , 4 S G V 2 0 10 1 10 100 0 4 8 12 16 20 24 28 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) ) ) DS ( ( n 100 n 100 100μsec e T = 175
in „LED Ansteuerung für Lazertag Projekt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P_DataSheet_V10.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „TP4056 Parallel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „Solarlampe (China) Spannungsbegrenzung hinzufügen.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „Frage zu 5V-Mini-USB-1A-Lithium-Li-ion-Akku-Lademodul“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P_DataSheet_V10.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „batteriebetriebener ESP32 --- Batterieschutzschaltung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „Frage zu Li-Ion Akku mit TP4056 laden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-P_DataSheet_V10.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „Erstes Board - Feedback willkommen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01-P.pdf
e1 DETAIL A Unit : mm b SYMBOL MIN. TYP. MAX. A 1.050 - 1.250 A1 0.000 - 0.100 A2 1.050 - 1.150 b 0.300 - 0.400 c 0.100 - 0.200 1 E D 2.820 - 3.020 E E 1.500 - 1.700 E1 2.650 - 2.950 e 0.950 TYP e1 1.800 - 2.000 c L 0.700REF e L1 0.300 - 0.600 θ 0 - 8 2 A A GAUGE PLANE 0.2 SEATING PLANE 1 θ A L1 L DETAIL A Fortune Semiconductor Corp. TEL: +886-2-2809-4742 11/11 DW01-P-DS-10_EN Rev. 1.0 http://www.fsc.com.tw FAX: +886-2-2809-4874 Sep, 2006
in „RDSon zur Strombegrenzung nutzen?“ · Analoge Elektronik und Schaltungstechnik ·
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p75nf75.pdf
0.0095Ω- 80A - TO-220 - TO-220FP - D PAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STB75NF75 75V <0.011Ω 80A (1) (1) 3 3 STP75NF75 75V <0.011Ω 80A 1 2 1 2 STP75NF75FP 75V <0.011Ω 80A (1) TO-220 TO-220FP 1. Current limited by package ■ Exceptional dv/dt capability ■ 100% avalanche
in „Unbekanntes Bauteil im Akkuschrauber“ · Analoge Elektronik und Schaltungstechnik ·
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670135-DS01-1.pdf
Threshold Voltage VGS(TH) V GS = VDS DI = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current DSS V DS = Rated BVDSS , GS = 0V - - 25 µA V = 0.8 x Rated BV , V = 0V, T = 125 C - - 250 µA DS DSS GS J On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , VGS = 10V 14 - - A Gate to Source Leakage
in „Suche IRFP 450B“ · Markt ·
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CJ2303.pdf
Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 Continuous Drain Current ID -1.9 A Continuous Source-Drain Diode Current IS -0.83 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t≤
in „Suche Transistor equivalent zu „S3“ SOT-23“ · Analoge Elektronik und Schaltungstechnik ·
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S2-L2-5V.pdf
pattern (Copper-side view) 1.102±0.02 .472 .039 .394±0.02 4 0.5 2.54 .157 1.0 .016 .020 .100 .055 .039 .300 12-1.3 DIA. 3 .047-.051 DIA. .118 1 2 3 4 5 6 7.62 12 .100 12 11 10 9 8 7 .300.472 .020 5.08 .200 General tolerance: ±0.3 ±.012 Tolerance: ±0.1 ±.003 2 en_ds_61105_0000: 130804D S Schematic (Bottom
in „24V Relais ansteuern“ · Analoge Elektronik und Schaltungstechnik ·
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S2-L2-5V.pdf
pattern (Copper-side view) 1.102±0.02 .472 .039 .394±0.02 4 0.5 2.54 .157 1.0 .016 .020 .100 .055 .039 .300 12-1.3 DIA. 3 .047-.051 DIA. .118 1 2 3 4 5 6 7.62 12 .100 12 11 10 9 8 7 .300.472 .020 5.08 .200 General tolerance: ±0.3 ±.012 Tolerance: ±0.1 ±.003 2 en_ds_61105_0000: 130804D S Schematic (Bottom
in „(V) 4-Fach 5*7 Punktmatrix Osram DLR 2416, Bistabile Relais SDS, LED-Display 7-Seg. 4-Fach“ · Markt ·
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STW12NK90Z.pdf
breakdown voltage VDS = max rating I Zero gate voltage V = max rating, 1 µA DSS drain currentGSV= 0) DS 50 µA TC = 125°C Gate-body leakage GSS current (V = 0) VGS = ± 20V ±10 µA DS V Gate threshold voltage V = V , I = 100µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on RDS(on) VGS = 10V,DI = 5.5A
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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irlr120n.pdf
= 5.0V, D = 6.0A ––– ––– 0.265 V GS= 4.0V, D = 5.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS, D = 250µA gfs Forward Transconductance 3.1 ––– ––– S V DS= 25V, D = 6.0A I Drain-to-Source Leakage Current ––– ––– 25 V DS= 100V, VGS = 0V DSS ––– ––– 250 µA V DS= 80V, VGS = 0V, J = 150°C I Gate-to-Source
in „was ist denn da los.“ · Analoge Elektronik und Schaltungstechnik ·