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app162__Interfacing_DS1820_in_a_MC_environment_.pdf
= 0x8F; /*------------------------------------------------ DS5000 TMOD Bit Values ------------------------------------------------*/ #define T0_M0_ 0x01 #define T0_M1_ 0x02 #define T0_CT_ 0x04 #define T0_GATE_ 0x08 #define T1_M0_ 0x10 #define T1_M1_ 0x20 #define
in „DS18B20 zu komplizierte Ansteuerung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
app162__Interfacing_DS1820_in_a_MC_environment_.pdf
= 0x8F; /*------------------------------------------------ DS5000 TMOD Bit Values ------------------------------------------------*/ #define T0_M0_ 0x01 #define T0_M1_ 0x02 #define T0_CT_ 0x04 #define T0_GATE_ 0x08 #define T1_M0_ 0x10 #define T1_M1_ 0x20 #define
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IOR__IRFR6215.pdf
, Drain-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) DS Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com IRFR/U6215 14 R D V DS V 12 GS D.U.T. R G - A 10 + VDD ( n e -10V u 8 Pulse Width ≤ 1 µs C Duty Factor ≤ 0.1 % i r 6 D , Fig 10a. Switching Time Test Circuit ID 4 - d(on) r td(off)f 2 V GS 10% 0 25 50 75 100 125 150 175 ° T C Case Temperature ( C) 90% V Fig 9. Maximum Drain Current Vs. DS Case Temperature Fig 10b. Switching Time
in „wie 24V-Busspannung mit 3,3V schalten?“ · Mikrocontroller und Digitale Elektronik ·
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LM2661.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „pegelanpassung analog“ · Analoge Elektronik und Schaltungstechnik ·
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DS1210.pdf
consumption. The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved. 1 of 6 111899 DS1210 OPERATION The DS1210 nonvolatile controller performs five circuit functions
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PDF
DS1210.pdf
consumption. The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved. 1 of 6 111899 DS1210 OPERATION The DS1210 nonvolatile controller performs five circuit functions
in „DS1210 als Ersatz für BA6162?“ · Mikrocontroller und Digitale Elektronik ·
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31029a.pdf
Contents of Address (FSR) = 0x00 Z = 1 I s r Example 3 DECF CNT, 0 e u Before Instruction t t CNT= 0x10 o W = x n Z = 0 After Instruction CNT= 0x10 W = 0x0F Z = 0 1997 Microchip Technology Inc. DS31029A-page 29-21 PICmicro MID-RANGE MCU FAMILY DECFSZ Decrement f, Skip if 0 Syntax: [label ] DECFSZ f,d Operands
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CET_CEU3252.PDF
CED3252/CEU3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 25A, R = 28mW @V = 10V. DS(ON) GS R = 39mW @V = 4.5V. DS(ON) GS Super high dense cell design for extremely low R. DS(ON) High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package.
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t1610.pdf
R th(j-a)W) 80 D²PAK 70 Epoxy printed board FR4, copper thickness = 35 µm 60 50 40 30 20 10 SCucm²) 0 0 5 10 15 20 25 30 35 40 DS2114 - Rev 11 page 6/18 T1610, T1635, T1650, BTA16, BTB16 Package information 2 Package information In order to meet environmental requirements, ST offers these devices
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sct2750ny-e.pdf
Characteristics(II) 6 3 18V 18V 16V 5 20V 2.5 20V 14V ] 14V ] 16V [ [ I 4 I 2 12V : t n n r 3 r 1.5 u 12V u VGS 10V C C i 2 Ta= 25ºC a 1 r Pulsed r Ta= 25ºC D D Pulsed 1 V = 10V GS 0.5 8V 8V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 Drain - Source Voltage :DS[V] Drain - Source Voltage :DS [V] Fig.6 T = 150°C Typical Output Fig
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MCP6562.pdf
Delays. Low Propagation Delays . DS22139B-page 8 © 2009 Microchip Technology Inc. MCP6561/1R/1U/2/4 Note: Unless otherwise indicated, V DD = +1.8V to +5.5V, V SS = GND, T = A25°C, V + = V IN DD /2, V IN– = GND, R L 10 kΩ to V DD /2, and
in „Schmitttrigger mit MCP6562 unklare Abweichung“ · Analoge Elektronik und Schaltungstechnik ·
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IRF3205S.pdf
e 5.5V r 5.0V r BOTTOM4.5V u100 BOTTOM4.5V C100 e e r r o o - - 4.5V t t i i r 10 r 10 D 4.5V D , , ID ID 20µs PULSE WIDTH 20µs PULSE WIDTH 1 T J 25 C TJ= 175 C 0.1 1 10 100 10.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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21425b.pdf
T = +150C ) J ) 25 ( ( N20 N 20 ( ( TJ = +150°C D15 TJ = +25°C S 15 R R 10 10 5 TJ = +25C 5 04 6 8 10 12 14 16 18 0 4 6 8 10 12 14 16 18 V SUPPLY (V) VSUPPLY (V) FIGURE 2-9: High-State Output FIGURE 2-12: Low-State Output Resistance. Resistance. DS21425B-page 6 © 2002 Microchip
in „Problem mit dem TC4469“ · Mikrocontroller und Digitale Elektronik ·
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APM2095.pdf
Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BVDSS Voltage V GS=0V , DS=-250µA -20 V Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.5 -0.7 -1 V I Gate Leakage Current V =±10V , V =0V ±100 nA GSS GS DS a Drain-Source
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IRF9Z34-Vishay.pdf
vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 20 3 ) D = - 18 A 10 Operation in this area limited ( 5 by R e V DS= - 48 V DS(on) g 16 ) l V = - 30 V ( 2 V DS t 2 e e 10 10 µs r 12 r 5 o u 100 µs S n o a 2 - 8 r 1 ms t , 10 G I , 4 - 5 10 ms G TC= 25 °C V For test circuit
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PSMN8R7-80PS_MOSFET.pdf
- V ID = 250 µA; VGS = 0 V; Tj= 25 °C 80 - - V V GS(th) gate-source threshold voltage ID= 1 mA; V DS= V GS; Tj= 175 °C; 1 - - V see Figure 10 ID = 1 mA; V DS= V GS; Tj= -55 °C; - - 4.6 V see Figure 10 ID= 1 mA; V DS= V GS; Tj= 25 °C; 2.3 3 4 V see Figure 11; see Figure 10 IDSS drain leakage current
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Datasheet.pdf
Drain Resistance ( E100 vs Bias Voltage C 125°C V GS(off) E100 A N S TYP = - 2.0V T 50 VGS(off)5.0V, 10 A S 50 25°C I R E r DS " 125°C VGS(off) R 20 rDS= V O - 55°C D 1 -_______ " TYP = - 7.0V I 10 VGS(off) I L R 20 25°C M 5 D rDS @ VGS = 0 R - N D - 55°C - 2 r D 101 2 5 10 20 50 100 r 1 0 0.2 0.4 0.6
in „Mal wieder: Was ist das für ein SMD?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Atmega48_LED_Test.c
/* Atmega verbunden mit einem DS18S20 Temperatursensor 8 LED's geben die gemessene Temperatur aus Die LED's sind an PORTB Beinchen | Wert in °C --------------------- B0 1 B1 2 B2 4 B3 8 B4 10 B5 20 B6 40 B7 80 die Leuchtenden LED's
in „Anfängerfrage zu switch case“ · Mikrocontroller und Digitale Elektronik ·
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MCP73811_2.pdf
Battery Regulation Voltage Supply Voltage (V DD ). (V ). BAT 2005-2013 Microchip Technology Inc. DS20001984F-page 7 MCP73831/2 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise indicated, V DD = [V REG (typical) + 1V], OUT = 10 mA and T = A25°C, Constant-Voltage mode. 104 525 103 RPROG
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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MCP_73831.pdf
Battery Regulation Voltage Supply Voltage (V DD ). (V ). BAT 2005-2013 Microchip Technology Inc. DS20001984F-page 7 MCP73831/2 TYPICAL PERFORMANCE CURVES (CONTINUED) Note: Unless otherwise indicated, V DD = [V REG (typical) + 1V], OUT = 10 mA and T = A25°C, Constant-Voltage mode. 104 525 103 RPROG
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Uhr_Temp.asm
Time_copy: .byte 4 Wecker_copy: .byte 3 EE_Wecker: .byte 3 EE_copy: .byte 2 RomCopy: .byte 17 ;RomAdresse DS18B20 tempcopy: .byte 8 ;Temperaturwert (+00,0°C) RTC_copy: .byte 8 ;RTC Rohwerte TimeCopy: .byte 10 ;Zeit (00:00:00) DateCopy: .byte 11 ;Datum (01.01.2014) DayCopy: .byte 7 ;Mo - So .cseg .org 0x00 jmp
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ga1.pdf
Temperature ( C) AZ431-A 7 of 19 March 2018 www.diodes.com © Diodes Incorporated Document number: DS36721 Rev. 6 - 2 AZ431-A Performance Characteristics (Cont.) Small Signal Voltage Gain vs. Frequency 70 0 60 TA=25 C I =10mA 50 KA B ( 40 i a G 30 g l o 20 V 10 0 -10 1k 10k 100k 1M Small Signal Frequency
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irfp2907.pdf
10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n (
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n (
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sta508__3_.pdf
E 14.20 BSC E1 11.00 BSC E2 VARIATION E3 - - 2.90 h - - 1.10 L 0.80 - 1.10 L1 1.60 REF L2 0.35 BSC N 36 R 0.20 - - R1 0.20 - - s 0.25 - - DS3503 - Rev 6 page 13/19 STA508 PowerSO-36 exposed pad up package information Table 9. Tolerance of form and position Symbol Databook aaa 0.10 bbb 0.30 ccc 0.075 ddd 0.25 eee 0.10 ggg 0.25 Note 1.2 Table 10. Variations Databook Symbol Opt. Min. Typ. Max. D1 9.40 - 9.80 A E2 5.80 - 6.20 DS3503 - Rev 6 page 14/19 STA508 Revision history Table
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JSM6333C.pdf
JSM6333C N&P-Channel Complementary Power MOSFET Product Summary ● VDS 30V ● RDDS(ON)at GS=10V) ＜95mohm ● R DS(ON)at GS=4.5V) ＜150mohm PMOS ● IDS -2.5A ● R DS(ON)at GS=-10V) ＜220mohm ● R DS(ON)at GS=-4.5V) ● 100% ▽V DSTested r General Description o ● High density cell design for lDS(ON) t ● High
in „Identifizierung Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPB026N06N.pdf
thermal impedance ID=f(V DS); TC=25 °C; D=0 Z thJCf(tp) parameter: t p parameter: D=t /Tp 1000 10 limited by on-state resistance 1 µs 10 µs 100 100 µs 1 0.5 1 ms ] ] DC / [ 10 [ D 10 ms C 0.2 I t Z 0.1 0.1 0.05 0.02 1 0.01 single
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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Low_Drop_Spannungsregler_MCP_1702-5002.pdf
V 5.00 u 5.00 u 4.99 0°C t -45°C t u 0°C u 4.98 O 4.98 +25°C O +25°C 4.97 -45°C 4.96 4.96 6 7 8 9 10 11 12 13 14 0 50 100 150 200 250 Input Voltage (V) Load Current (mA) FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load Voltage. Current. DS22008D-page 8 © 2009 Microchip Technology
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Anlogic_EG4S20_DS301_2.6_03_2020.pdf
IO_BE12P_0, GCLKIOB_5 D4 0 IO_BE29N_0, VREF0_0 A11 0 IO_BE13P_0, GCLKIOB_7 D5 0 IO_BE29P_0, HSWAPEN A10 0 IO_BE13N_0, GCLKIOB_6 B10 0 IO_BE14N_0, GCLKIOB_2 C10 0 IO_BE14P_0, GCLKIOB_3 E9 0 IO_BE15P_0 D9 0 IO_BE15N_0, VREF0_1 B9 0 IO_BE16N_0 A9 0 IO_BE16P_0 C9 0 IO_BE17P_0 DS301_2.6 www.anlogic.com 15 2020.3
in „SDRAM Burst lesen ohne Unterbrechung über Column, Row und Banks hinaus“ · FPGA, VHDL & Co. ·
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PDF
irfb3077pbf.pdf
–– V/°C Reference to 25°C, D= 5mAd RDS(on) Static Drain-to-Source On-Resistance ––– 2.8 3.3 mΩ V = 10V, I = 75A g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lt1153.pdf
Circuit Breaker with Bootstrapped Supply 24V TO 28V + 24V TO 28V + 100 F 3k 100 F 100k + + IN VS 18V 10 F IN VS 18V 10 F 6.2k 5V 5V 51k CT DS 51k CT DS 0.47 F LTC1153 0.47 F LTC1153 1N4148 STATUS G MTP12N06 STATUS G MTP15N06E 30k 30k GND SD 5V GND SD 5V *PTC 24V TO 28V *PTC 24V TO 28V THERMISTOR LOAD THERMISTOR
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Datei
Atmega16_DS18S20.c
DataPin vom DS1820 #define W1_IN PINC //Pin abfragen #define W1_OUT PORTC //Ausg?nge ansteuern #define W1_DDR DDRC //Datenrichtung jeweils festlegen - je nach dem ob Daten zum DS gesedent, oder vom DS empfangen werden
in „Thermomixer noch einmal neu - dieses mal nur ein MEGA16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Linear_Mode_Operation_and_Safe_Operating_Diagram_of_Power-MOSFETs.pdf
continuously decreasing area specific on-resistances. Consequently, compared to Power-MOSFETs from 10 years ago today’s state of the art Power-MOSFETs utilize a much smaller silicon die area for any given R DS(on) Thus the power handling capabilities of devices for a specific R DS(on)enerally have decreased
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PDF
BTS141_DS_14.pdf
shutdown 1) IN(H) T j= 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 12 A, T j 25 °C - 31 34 V IN= 5 V, ID= 12 A, T j 150 °C - 52 68 On-state resistance R DS(on) V IN= 10 V, ID= 12 A, T j 25 °C - 25 28 V IN= 10 V, ID= 12 A, T j 150 °C - 45 56 Nominal
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
f = 1MHz D =25A C iss= Cgs+ Cgd ,Cds SHORTED C = C ) VDS = 44V C rss= Cgd+ C ( VDS = 27V 2000 oss ds gd g 16 VDS = 11V F t ( o e C iss V n 1500 c 12 t u c o p o a 1000 - 8 , t C G Coss , 500 S 4 VG C rss 0 0 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mcp23009.pdf
SS NC 2 17 NC 6 5 4 3 CS 3 16 GP7 VSS 1 12 GP3 SCK 2 EP 11 GP2 SCK 4 15 GP6 17 SI 5 14 GP5 V DD 3 10 GP1 SO 6 13 GP4 CS 4 9 GP0 5 6 7 8 RESET 7 12 GP3 I INT 8 11 GP2 S O E T S S I GP0 9 10 GP1 R * Includes Exposed Thermal Pad (EP); see Table 1-1 and.Table 1-2 DS22121B-page 2 © 2009 Microchip Technology
in „Frage zu SPI und MCP23S09“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1640.pdf
VIN V OUTP 976 K + CIN C OUT N 4.7µF EN VFB 10 µF O I 309 K L - P GND SGND Efficiency vs. I OUT for 3.3V OUT 100.0 VIN 2.5V ) % 80.0 y c e c VIN 0.8V VIN 1.2V f E 60.0 40.0 0.1 1.0 10.0 100.0 1000.0 Output Current (mA) DS22234B-page 2 2011 Microchip
in „ESP32-C6 an 18650 Akku betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
73493.pdf
Leakage GSS VDS = 0 V, VGS = ± 20 V ± 100 nA V = - 40 V, V = 0 V - 1 Zero Gate Voltage Drain Current I DS GS µA DSS V DS= - 40 V, GS = 0 V, J = 55 °C - 10 On-State Drain Current D(on) VDS ≥ 5 V, GS = - 10 V - 120 A Drain-Source On-State Resistancea rDS(on) V GS= - 10 V,DI = - 20 A 0.0041 0.005 Ω a Forward
in „Messungen mit DMM Dual-Slope Verfahren am PMOS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NECCS04393-1.pdf
ch – – 3 ch (UART: 1 ch) 56 4.0 V – control µPD780828B 32KBto60KB 59 Note 16-bit timer: 2 channels 10-bit timer: 1 channel 4 Data Sheet U11776EJ2V1DS µPD78P0308, 78P0308Y • Subseries with the suffix Y Function ROM Timer 8-Bit 10-Bit 8-Bit Serial Interface I/O VDD External Capacity A/D A/D D/A MIN.Value
in „Anschlussbelegung uP D78P0308GF gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7822.pdf
120 nC di/dt ~ 700A/µs ChargeT V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 108 nC di/dt = 700A/µs rr(s) Charge (with Parallel (with 10BQ040) Schottky)T V DS= 16V, VGS = 0V, S = 15A Notes: Q Repetitive rating;pulse width limited by max.junction temperature
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Eagle_DataSheet_V2.8_english.pdf
output, high effective B<11:0> Output (to FPGA) ADC conversion result for the corresponding channel DS300_2.8 www.anlogic.com 63 2018.09 安路科技 EAGLE 系列 FPGA数据手册 Figure 2-10-1 Eagle ADC Sampling Control Timing DS300_2.8 www.anlogic.com 64 2018.09 安路科技 EAGLE 系列 FPGA数据手册 3 DC communication characteristics
in „Sipeed Lichee Tang FPGA mit RISC-V Core aus China unter 20€“ · FPGA, VHDL & Co. ·
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PDF
Eagle_DataSheet_V2.8_english.pdf
output, high effective B<11:0> Output (to FPGA) ADC conversion result for the corresponding channel DS300_2.8 www.anlogic.com 63 2018.09 安路科技 EAGLE 系列 FPGA数据手册 Figure 2-10-1 Eagle ADC Sampling Control Timing DS300_2.8 www.anlogic.com 64 2018.09 安路科技 EAGLE 系列 FPGA数据手册 3 DC communication characteristics
in „SDRAM Burst lesen ohne Unterbrechung über Column, Row und Banks hinaus“ · FPGA, VHDL & Co. ·
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PDF
70622B.pdf
18.0 I -4.0 16.0 -6.0 -8.0 14.0 -10.0 12.0 -12.0 10.0 0123 4567 TX Output Power (TXOPVAL<2:0>) [d]] Pout IDD Note: +10 dBm typical. Output power is achievable, evan at SAW filter’s output. DS70622B-page 124 Preliminary © 2010 Microchip
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70622B.pdf
18.0 I -4.0 16.0 -6.0 -8.0 14.0 -10.0 12.0 -12.0 10.0 0123 4567 TX Output Power (TXOPVAL<2:0>) [d]] Pout IDD Note: +10 dBm typical. Output power is achievable, evan at SAW filter’s output. DS70622B-page 124 Preliminary © 2010 Microchip
in „Wie genau funktioniert die drahtlose Kommunikation?“ · HF, Funk und Felder ·
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PDF
P14067EJ2V0DS00.pdf
(mA) Frequency f (GHz) 4 Data Sheet P14067EJ2V0DS00 NE3210S01 S-PARAMETERS MAG. AND ANG. V DS= 2 V, I = 10 mA FREQUENCY S 11 S21 S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 2000.0000 0.973 –21.2 4.450 154.2 0.022 75.9 0.550 –15.2 2500.0000 0.951
in „Vorverstärker für magnetische Loop“ · HF, Funk und Felder ·
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PDF
MCP9501-2-3-4.pdf
3 require an external pull-up resistor. GND to select output hysteresis.Either 2°C (HYST = GND) or 10°C (HYST = V ) of typical hysteresis can be selected. DD DS22268A-page 6 © 2011 Microchip Technology Inc. MCP9501/2/3/4 NOTES: © 2011 Microchip Technology Inc. DS22268A-page 7 MCP9501/2/3/4 4.0 FUNCTIONAL
in „Thermal Shutdown“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203ns.pdf
1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 100A c D ) n ( s n TJ=
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TC4426.pdf
Technology Inc. DS21422B-page 7 TC4426/TC4427/TC4428 Note: Unless otherwise indicated, T A = +25ºC with 4.5V ≤ V DD ≤ 18V. –8 10 9 8 6 5 e 4 • A 3 2 10–9 4 6 8 10 12 14 16 18 V DD FIGURE 2-19: Crossover Energy vs. Supply
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CS4344-45-46-48_F1.pdf
permanent damage to the device. Normal operation is not guaranteed at these extremes. DS613F1 5 CS4344/5/6/8 DAC ANALOG CHARACTERISTICS (Full-Scale Output Sine Wave, 997 Hz (Note 1), Fs = 48/96/192 kHz; Test load R = 3 k Ω, C = 10 pF (Figure 1). L L Measurement Bandwidth 10 Hz to 20 kHz,
in „STA015, CS4344 Platinencheck“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO4410.pdf
Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to V DS(V) = 30V provide excellent DS(ON) shoot-through immunity, ID= 18A (VGS = 10V) body diode characteristics and ultra-low gate R DS(ON) 5.5mΩ (V GS= 10V) resistance. This device is ideally suited for use
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·