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Service_Guide_DS1000E.pdf
RIGOL Service Guide DS1000E, DS1000D Series Digital Oscilloscopes DS1102E, DS1052E, DS1102D, DS1052D RIGOL Technologies, Inc. RIGOL Copyright © 2009 RIGOL Technologies, Inc. All Rights Reserved. Trademark Information RIGOL
in „Rigol 1052e: Akkubetrieb zurüsten“ · Mikrocontroller und Digitale Elektronik ·
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DS1000Z_Analog.pdf
2017/5/6 Time: 21:07:52 SP I U 5 0 5 * P I U 5 0 8 PIU609 PIU602 COC16 10 File: C:\Users\Andy\Desktop\DS1000Z_Analog\DAC.SchDoc P I U 6 0 4 1 2 3 4 5 6 7 8 PIU606 10 PIU205 I0 PIU2010 PIU207 PIU208 PIU607 PIU608 PIU206 PIU209 COC9 PIC901 PIC902 COR13 PIR1301 PIR1302 COR30 COR31 COR32 COR3 PIR3002 PIR3001
in „Analogverstärker für Mikrocontroller Oszilloskop“ · Analoge Elektronik und Schaltungstechnik ·
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eSpDS1k2.pdf
Acute DS-1000 series Digital Storage Oscilloscope PRODUCT DESCRIPTION The DS-1000 series (DS-1002, DS-1102, DS-1202) is a PC-based, pocket-sized digital storage oscilloscope (DSO) with various high-end functions
in „USB Oszilloskop“ · Mikrocontroller und Digitale Elektronik ·
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VMO1200-01F.pdf
auxiliary AC drives of TVJ 125°C 6 mA electric vehicles I V = ± 20 V;V = 0 V 1.2 µA - DC drives GSS GS DS Q g 1710 nC - power supplies Q V = 10 V;V = 50 V; I = 1000 A 396 nC gs GS DS D Q gd 1020 nC td(on) 360 ns tr inductive load 1620 ns td(off) 460 ns tf VGS= 10 V;V DS= 50 V 1020 ns E D = 1000 A; RG= 1.8
in „Impulsströme“ · Analoge Elektronik und Schaltungstechnik ·
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VMO1200-01F.pdf
auxiliary AC drives of TVJ 125°C 6 mA electric vehicles I V = ± 20 V;V = 0 V 1.2 µA - DC drives GSS GS DS Q g 1710 nC - power supplies Q V = 10 V;V = 50 V; I = 1000 A 396 nC gs GS DS D Q gd 1020 nC td(on) 360 ns tr inductive load 1620 ns td(off) 460 ns tf VGS= 10 V;V DS= 50 V 1020 ns E D = 1000 A; RG= 1.8
in „Wie wähle ich Treiber für VMO1200-01F?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DisplayT.asm
3= Tausender Dezimalpunkt ;auf 3 DS prüfen; ja= zu Dezimalpunkt, da führende Null erlaubt und kein Minus cpi r16,3 breq Dezimalpunkt ;ab hier keine 3 Dezimalstellen ; Prüfung auf führende Null cpi LED1000,0b00010010 ;LED1000 Null? brne Dezimalpunkt ;ist nicht Null: zu Dezimalpunkt, da Tausender Zahl ist und kein Minus ser LED1000 ;ist Null= r setzen für T aus ;ab hier ist Tausender leer und keine 3 DS ;auf 2 DS prüfen; ja= zu Minus, da Hunderter Null sein darf cpi r16,2 breq Minus ;hat 2 DS: ;ab hier Tausender leer, keine 3
in „Hausbus für Meß- und Steueraufgaben mit Attiny“ · Haus & Smart Home ·
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onewire.c
= 0xFF && j<1000) { //4. wait until conversion is finished // _delay_ms(1); // j++; //} _delay_ms(1000); //} error=ds1820_reset(used_pin); //5. Reset ds1820_wr_byte(0xCC,used_pin); //6. skip ROM ds1820_wr_byte(0xBE,
in „Delay mit Timer“ · Mikrocontroller und Digitale Elektronik ·
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MOSFET.pdf
10 0.01 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c D = 180A a V = 10V Α i GS n e e R 2.0 u 100 TJ= 175°C n C O ) c c e u u l o S a1.5 o T J 25°C o r - - N a 10
in „LeistungsMosfet Kühlfläche als Drain-Anschluss nutzen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
++; delay_ms(1000); ds1307_write_byte(0x00, ((u8_sec & SECONDS) | CH)); } if(!io_get(GPIO_PUSH_BUTTON_1)){ state=Zeitsecondes10; delay_ms(1000); } break; case Zeitsecondes10: if(!io_get(GPIO_PUSH_BUTTON_0)){ u8_sec10
in „AVR32 Timer Interrupt“ · Mikrocontroller und Digitale Elektronik ·
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LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 LUXEON K2 Emitter Datasheet DS51 (5/06) 2 Product Nomenclature In order to satisfy market requirements, the LUXEON K2 will be available in two configurations, one tested and binned at 350 mA and a second tested and binned at 1000
in „[S] LED aus Feuerwehr Singalleuchte (Blitzlicht)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
I I 4.5V 4.5V ≤60μs PULSE WIDTH Tj = 175°C 0.01 1 0.1 1 10 100 1000 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 c D = 81A ) t 3.0 V = 10V (
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS1302.cpp
2010; this->mon = 1; this->date = 1; this->hour = 0; this->min = 0; this->sec = 0; this->dow = 5; } DS1302_RAM::DS1302_RAM() { for (int i=0; i<31; i++) cell[i]=0; } DS1302::DS1302(uint8_t ce_pin, uint8_t data_pin, uint8_t sclk_pin) { _ce_pin = ce_pin; _data_pin = data_pin; _sclk_pin = sclk_pin; pinMode
in „rtc 1302 tage vergleichen (arduino)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
qcamber-qt6.patch
TextSymbol::painterPath(void) QString filename = ctx.loader->absPath("fonts/" + m_font); FontDataStore* ds = CachedFontParser::parse(filename); - QMatrix mat(m_xsize / ds->xsize(), 0, 0, m_ysize / ds->ysize(), 0, 0); + QTransform mat(m_xsize / ds->xsize(), 0, 0, m_ysize / ds->ysize(), 0, 0); for (int i =
in „Qt4 -> Qt5/6: scrollbar signal handling“ · Softwareentwicklung ·
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Datei
DS1302.cpp
2010; this->mon = 1; this->date = 1; this->hour = 0; this->min = 0; this->sec = 0; this->dow = 5; } DS1302_RAM::DS1302_RAM() { for (int i = 0; i < 31; i++) cell[i] = 0; } DS1302::DS1302(uint8_t ce_pin, uint8_t data_pin, uint8_t sclk_pin) { _ce_pin = ce_pin; _data_pin = data_pin; _sclk_pin = sclk_pin;
in „rtc 1302 tage vergleichen (arduino)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TC4426.pdf
FIGURE 2-6: Propagation Delay Time vs. Temperature. Supply Voltage. 2003 Microchip Technology Inc. DS21422B-page 5 TC4426/TC4427/TC4428 Note: Unless otherwise indicated, T A = +25ºC with 4.5V ≤ V DD ≤ 18V. 60 C = 1000pF 45 c 55 LOAD C LOAD= 1000 pF e VDD= 12V 40 V IN5V n 50 c V DD= 18V ( 45 t s 35 t
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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Ferritperlen.pdf
222 e e s n 271 n 101 I 271 I 80 I 80 470 80 220 100 100 100 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000 Frequency (MHz) Frequency (MHz) Frequency (MHz) DSS310 Series Fig. 9 DS310H Fig. 7 DST310H Fig. 8 BL222/DL223 0 0 0
in „24Bit Delta-Sigma ADC-Eingang vor ESD und Überspannung schützen“ · Analoge Elektronik und Schaltungstechnik ·
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DS60VGPV.pdf
Kom bi-Ableiter Typ 1+2 für Iim p DC-Anwendungen und Photovoltaik 12,5kA DS60VGPV-500, DS60VGPV-1000 Maßbild und Prinzipschaltbild te aran rsGu 0Yea it DS60VGPV-... 1 ua 70 72 P ium Q e m + - 90 File: E326289 9 + - Ft MI Ft MI Ft MI t° t° t° DS60VGPV-1000 GSG GSG Der DS60VGPV
in „USB Steckdose, Klingeltrafo Gleichstrom, Zukunft“ · Haus & Smart Home ·
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PDF
DS1775R.pdf
Time tCONVT 9-bit 125 187.5 ms conversion 10-bit 250 375 conversion 11-bit 500 750 conversion 12-bit 1000 1500 conversion 12 of 14 DS1775 AC ELECTRICAL CHARACTERISTICS: 2–WIRE INTERFACE (–55°C to +125°C; V DD =2.7V to 5.5V) PARAMETER SYMBOL CONDITION MIN TYP MAX UNITS NOTES SCL clock frequency f Fast Mode
in „AkkuPack mit 12 Volt 2100mAh wie laden ?“ · Mikrocontroller und Digitale Elektronik ·
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DS_IRFB7430.pdf
14.0 VGS = 0V, f = 1 MHZ I = 100A Ciss = gs + gd, CdsSHORTED D C = C ) 12.0 rss gd ( VDS = 32V Coss = ds + gd g V = 20V ) l 10.0 DS ( o e Ciss V n r 8.0 i10000 u c S p C oss t 6.0 C C e , rss a C G 4.0 ,S G V 2.0 1000 0.0 1 10 100 0 50 100 150 200 250 300 350 400 VDS , Drain-to-Source Voltage (V) Q G Total
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
MSO_DS1000Z_Upgrade_Instructions.txt
This documentation is designed to provide guidance to customers on how to upgrade the MSO/DS1000Z series digital oscilloscope to the version in the "DS1000Z(ARM)update.rar" file. The applicable models include DS1XX4Z, DS1XX4Z Plus, DS1XX4Z-S Plus, MSO1XX4Z and MSO1XX4Z-S. New versions of firmware
in „Rigol-DS1054Z“ · Mikrocontroller und Digitale Elektronik ·
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sm6t100a.pdf
1 MHz Vosc 30 mVRMS Vosc 30 mVRMS Tj= 25 °C Tj= 25 °C 1000 SM6T6V8A SM6T6V8CA 1000 SM6T15CA SM6T15A 100 SM6T30CA SM6T30A SM6T68CA 100 SM6T100CA SM6T68A 10 SM6T100A SM6T220CA SM6T220A V R(V) VR(V) 10 1 1 10 100 1000 1 10 100 1000 DS0684 - Rev 14 page 4/12 SM6TxxA
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
termometer.c
FDEV_SETUP_STREAM(uart_putchar, NULL, _FDEV_SETUP_WRITE); void led_beep() { DDRA = 0x80; PORTA = 0x00; _delay_ms(1000); PORTA = 0x80; _delay_ms(1000); PORTA = 0x00; _delay_ms(1000); PORTA = 0x80; } //Wandelt einen Hexa-Dezimalwert in eine Dezimalzahlum int char2int(char hex) { int zahl; if ( hex >= 65 && hex <= 70)
in „Hilfe bei meinem DS1621 Problem am ATmega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfb3077pbf.pdf
°C 10 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c ID = 75A ) a V = 10V Α i GS n e e R 2.0 u 100 n C T = 175°C O ) c J r e u u l S S a1.5 o t r - n N a 10 TJ= 25
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRFP_3703.pdf
1 TJ= 25 C 10 TJ= 175 C 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10000 2.0 D = 260A c ) a ( i n s 1.5 r R 1000 T = 25 C n C
in „[Projekt] Einstellbares Netzteil 12V/60A auf 0,5-2,5V/250A“ · Analoge Elektronik und Schaltungstechnik ·
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irf3205.pdf
On-Resistance Vs. Temperature IRF3205 8000 VGS = 0V, f = 1MHz 20 C = C + C , C SHORTED ID = 59A 7000 iss gs gd ds ) Crss = C gd V V DS = 44V Coss = C ds+ C gd ( V DS = 28V 6000 g16 V = 11V F C iss t DS ( o e 5000 V c e12 a r i 4000 Coss u c S p - a 3000 - 8 , t C a G 2000 Crss , G 4 V 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 30 60 90 120 150 180 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) A t n 10µs
in „Schaltung zu Kondensatorentladungsschweißen“ · Analoge Elektronik und Schaltungstechnik ·
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irl7833.pdf
WIDTH 20µs PULSE WIDTH Tj = 25°C Tj = 175°C 1 1 0.1 1 10 100 1000 0.1 1 10 100 1000 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e I = 75A n D ) t VGS = 10V
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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ALD110800-1489.pdf
CURRENT vs. ON RESISTANCE▯ GATE SOURCE VOLTAGE vs. DRAIN ▯ V +4 SOURCE ON CURRENT GS(TH) V T 100000 ) D DS N TA= 25°C ( VDS = 0.5V E 10000 VDS=+10V V =-4.0V to +5.4V EGS(TH)3 I TA= +125°C R GS A VGS DS(ON) U 1000 T S C OVGS(TH) N ▯ 100 V O A ▯ E VDS = 0.5V C ( CV +1 T = +25°C R 10 U GS(TH) A VDS = 5V U O TA= +25°C S 1 DS =+0.1V VDS=+5V S - TVGS(TH) A VDS=+1V A VDS = 5V V = R • I R 0.1 G T = +125°C DS ON DS(ON) D VGS(TH) A 0.01 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000 DRAIN SOURCE ON CURRENT (µA) ON RESISTANCE
in „Radiobasteln - Was hat 2018 noch Aussicht auf Erfolg ?“ · HF, Funk und Felder ·
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GA4A4P.pdf
Electronics sales representative for availability and additional information. Document No. D16494EJ2V0DS00 (2nd edition)The mark ★ shows major revised points. Date Published February 2003 NS CP(K) Printed in Japan 2002 GA4xxx ELECTRICAL CHARACTERISTICS (T A= 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS
in „Was für ein Bauteil?“ · Mikrocontroller und Digitale Elektronik ·
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lt1153.pdf
CGATE = 1000pF Time for GATE < 1V 10 36 60 s VS= 12V, CGATE = 1000pF Time for GATE < 1V 10 28 60 s tTD MinimumTrip Delay VS= 5V, CGATE = 1000pF Time for GATE < 1V 5 25 40 s VS= 12V, CGATE = 1000pF Time for GATE
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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DS_UJ3N120070K3S-1530204.pdf
u r 30 C1.E-05 C g n k r 20 e D L i1.E-06 10 r D 0 1.E-07 0 1 2 3 4 5 6 7 8 9 10 200 400 600 800 1000 1200 Drain-Source Voltage,DS (V) Drain-Source Voltage, DS(V) Figure 3 Typical output characteristics Figure 4 Typical drain-source leakage at TJ= 175°C at VGS= -20V Rev. B, December 2018 4 For more
in „SiC Kaskoden Body Diode“ · Analoge Elektronik und Schaltungstechnik ·
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A100_IRF3415_IF.pdf
VsT pemueratyre IRF3415PbF 6000 V = 0V, f = 1MHz 20 I = 22A CGS = C + C C SHORTED D Ciss= Cgs gd , ds ) V DS = 120V 5000 rss gd ( V DS = 75V Coss= Cds + Cgd e 16 V DS = 30V ) a p o ( 4000 V c e 12 a Ciss u c 3000 o a - a - 8 C t C 2000 Coss a , Crss S 4 1000 G V FOR TEST CIRCUIT 0 SEE FIGURE 13 1 10
in „Suche IR 513H“ · Analoge Elektronik und Schaltungstechnik ·
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IRL3713.pdf
Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3713/S/L 14 I = 100000 V = 0V, f = 1 MHZ D 30A V DS = 24V GS V DS = 15V C iss = gs+ Cgd C ds SHORTED V 12 V DS = 6V C rss = gd ( C = C + C g oss ds gd l 10 F o (10000 V c Ciss c 8 n Coss u i o a - a - 6 C t C 1000 Crss a G 4 S G V 2 100 0 1 10 100 0 40 80 120 160 Q , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) A t n100
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS1000Z-SCPI-Keyboard.txt
DS1000Z Firmware 04.03.SP1 :SYST:KEY:PRESs <key> :SYST:KEY:INCRease <knop>,<step> :SYST:KEY:DECRease <knop>,<step> knop = VPOSITION | VSCALE | HPOSITION | HSCALE | TLEVEL | KFUNCTION e.g: :SYST:KEY:INCR
in „Erfahrungen mit Oszi Rigol DS1074Z bzw. DS1104Z?“ · Mikrocontroller und Digitale Elektronik ·
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irfp260n.pdf
28A Ciss= Cgs+ Cgd Cds SHORTED V VDS = 160V 7000 C = C ( VDS = 100V rss gd g VDS = 40V 6000 Coss = ds + gd l 12 F o ( Ciss V c5000 c a u c4000 S 8 p o a Coss - ,3000 t C G 2000 , 4 Crss S V 1000 0 0 0 50 100 150 200 1 10 100 1000 Q , Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 1000 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) A t e00 ) r ( u TJ= 175 C n100 10us n e a u D 10 C e i 100us r r v TJ= 25 C D e , 10 R ID 1ms D 1 I TC= 25 C 10ms T = 175 C VGS = 0 V Single Pulse 0.1
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
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sqjq160e.pdf
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
On-Resistance Vs. Temperature IRL3705N 6000 15 I = 46A VGS = 0V, f = 1MHz D Ciss = Cgs + C gd , C ds SHORTED ) V DS = 44V Crss = C gd ( V = 28V 5000 Ciss Coss = C ds+ C gd e 12 DS g ) l F o ( 4000 V e e 9 n r t o c 3000 C oss S p o a - 6 C t , 2000 a C , S Crss G3 1000 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 120 140 V DS , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
On-Resistance Vs. Temperature IRL3705N 6000 15 I = 46A VGS = 0V, f = 1MHz D Ciss = Cgs + C gd , C ds SHORTED ) V DS = 44V Crss = C gd ( V = 28V 5000 Ciss Coss = C ds+ C gd e 12 DS g ) l F o ( 4000 V e e 9 n r t o c 3000 C oss S p o a - 6 C t , 2000 a C , S Crss G3 1000 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 120 140 V DS , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
21425b.pdf
1000 pF A 40 ) 40 m A Y ( L 30 L 30 P 500 kHz P I U 20 20 I 100 pF 10 200 kHz 10 20 kHz 100 1000 10,000 0 10 100 1000 10,000 C LOAD (pF) FREQUENCY (kHz) FIGURE 2-13: Supply Current vs. FIGURE 2-16: Supply
in „Problem mit dem TC4469“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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IRF4905.pdf
A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 ▯I = -64A c D ) a ( s t s e R 1.5 r TJ= 25°C n u 100 O C T = 175°C e ) c J r e u o l1.0 o - a - t r - i N i 10
in „P Kanal Mosfet schlägt immer wieder mal Durch.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlr3717.pdf
I = 12A C iss= Cgs+ Cgd, CdsSHORTED D C = C ) 5.0 rss gd ( VDS = 16V C oss= Cds+ Cgd g V = 10V ) l DS (0000 o 4.0 e V n r i C o 3.0 a iss - a t C C oss e C1000 a 2.0 , C rss S V 1.0 100 0.0 1 10 100 0 5 10 15 20 25 30 VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 1000.00 10000 TJ= 25°C OPERATION IN THIS AREA ) ) LIMITED BY R (on) ( T = 175°C ( DS n J n1000 e e u100.00 u C C i c r u 100 D S r o 100µsec v n e 10.00 a , D 10 1msec D , IS I Tc = 25°C Tj = 175°C 10msec
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irfp2907.pdf
TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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1789204.pdf
pF t20 t n n 15 r r 470 pF 100 pF u15 50 kHz 200 kHz u C C 10 p10 p 1,000 pF p p S 5 S 5 0 0 100 1000 10000 10 100 1000 Capacitive Load (pF) Frequency (kHz) FIGURE 2-15: Supply Current vs. FIGURE 2-18: Supply Current vs. Capacitive Load. Frequency. 2007-2013 Microchip Technology Inc. DS20002052C-page
in „Low Side MOSFET Treiber als Pegelwandler“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
neuds1820.h
lcd_write( "" ); } //------------------------------------------------------------------------------ void ds1820_auslesen_to_global_TR(){ u8 i; for(i=0;i<anz_sensor;i++)ds1820_temperature[i] =851; uint8_t durchlauf; //ds1820_start_meas(); #if use_wdt //wdt_reset(7); #endif //_delay_ms(1000); #if use_wdt //wdt_reset
in „ds1820 + isr/Impulszähler“ · Mikrocontroller und Digitale Elektronik ·
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TPCA8048-H_Toshiba.pdf
current I (A) D D 4 2009-07-02 Free Datasheet http://www.datasheet4u.com/ TPCA8048-H R – Ta I – V DS (ON) DR DS 12 1000 Common source Common source Pulse test ) Ta = 25°C e 10 ( 4.5 Pulse test n t R 100 i ) 8 I 10 e Ω ID = 9, 18, 35 A t - ( n 3 N ) r 2 O N 6 u 10 c ( D = 9, 18, 35 A e u S r 1 s D 4
in „WER KENNT DIESES 10S BMS von 36V Lion Akku vom Hersteller GW.“ · Mikrocontroller und Digitale Elektronik ·
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stgw60h65dfb.pdf
=60A (µJ) 4000 800 TJ=175°C 3500 700 TJ=175°C 3000 600 2500 500 Vr=400V, F =60A 2000 400 1500 300 1000 200 TJ=25°C TJ= 25°C 500 100 0 0 0 500 1000 1500 2000 2500 di/dt(A/µs) 0 500 1000 1500 2000 2500 di/dt(A/µs) Figure 23. Capacitance variations Figure 24. Collector current vs switching frequency Ic(A) GIPD080120151105FSR GIPD280820131518FSR C(pF) f=1MHz 100 Tc=80°C 10000 Cies 80 Tc=100 C 1000 60 Rectangularcurrentshape, 100 40 Ω Coes (dutycycle=0CC,V00V,G =10 Cres VGE=J/15V,T =17)°C 20 10 1 10 f(kHz) 0.1 1 10 100 VCE(V) DS9535 - Rev 8 page 8/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB
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ga1.pdf
are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AZ431-A 1 of 19 March 2018 Document number: DS36721 Rev. 6 - 2 www.diodes.com © Diodes Incorporated AZ431-A Typical Applications Circuit Shunt Regulator High Current Shunt Regulator
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IRLR6225PBF_NMOS.pdf
On-Resistance vs. Temperature 100000 VGS = 0V, f = 1 MHZ 14.0 C = C + C , C SHORTED ID= 17A iss gs gd ds Crss = Cgd V 12.0 C = C + C ( VDS = 16V oss ds gd g V = 10V F l 10.0 DS ( 10000 V VDS = 4.0V c e n Ciss r 8.0 i o a C - a oss - 6.0 C C rss t C 1000 a , 4.0 S V 2.0 100 0.0 1 10 100 0 25 50 75 100 125
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