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PDF
MRF272L.pdf
Current IDSS — — 2.5 mAdc (VDS= 28 V, GS= 0) Gate–Body Leakage Current IGSS — — 1.0 Adc (VGS= 20 V, DS= 0) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF275L MOTOROLA WIRELESS
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PDF
uhp-ma_e.pdf
/A.C LP-425Z JYs275/A.C CP-S830 JYs150/A.C LP-420 JYs275/D.C CP-X800 JYd120/D.C LP-400 JYs275/A.C CP-S220 JYd120/A.C 55x50 LP-350 JYd275/A.C CP-HS1000 JYd150/D.C LP-340 JYd275/A.C CP-HS2000 JYd200/D.C LP-335 JYs120/A.C
in „Beamer 'wiederverwerten'?“ · Mikrocontroller und Digitale Elektronik ·
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DS1615.pdf
DS1615 14 1 DS275 7 2 9 NC RX 13 3 RX OUT RX IN5 7 ST TX TX IN TX OUT 3 7 INT COMS 15 8 S1 4 4 8 9 5 990073 - 11 auch die Messung. Setzt man dagegen zu werden. Entweder nutzt man das den Speicher der Temperaturm
in „Temperaturlogger+Funk“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP9101C.pdf
-AZTRG1 Release AP9101Cxxx 4.475V 4.275V 2.500V 2.900V 0.150V 0.500V -0.150V 8.0V 7.3V Selectable Auto Option 1 Permission -BATRG1 Release AP9101Cxxx Auto -BBTRG1 4.475V 4.275V 2.500V 2.900V 0.200V 0.500V -0.200V 8.0V 7.3V Selectable Release
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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PDF
sia817edj_MOSFET_SCHOTTKY.pdf
GSS V DS = 0 V, GS = ± 12 V ± 10 µA V DS = - 30 V,GS = 0 V - 1 Zero Gate Voltage Drain Current DSS V = - 30 V, V = 0 V, T = 55 °C DS GS J - 10 On-State Drain Currenta ID(on) VDS 5 V, GS = - 10 V - 8 A V = -
in „Korrekte LIPO-Ladeschaltung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2761.pdf
DS2761BE/T&R D2761EB DS2761BE on Tape-and-Reel DS2761AE-025 2761A25 TSSOP, 25mW Sense Resistor, 4.275V VOV DS2761BE-025 2761B25 TSSOP, 25mW Sense Resistor, 4.35V VOV DS2761AE-025/T&R 2761A25 DS2761AE-025 in Tape-and-Reel DS2761BE-025/T&R 2761B25 DS2761BE-025 in Tape-and-Reel DS2761AX-025/T&R DS2761AR Flip-Chip, 25mW Sense Resistor, Tape-and-Reel, 4.275OVV DS2761BX-025/T&R DS2761BR Flip-Chip, 25mW Sense Resistor, Tape-and-Reel
in „Akkustand mit AVR feststellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
cassegrain01.pdf
429,6068 52,37 -300 967,0202 23,27 -300 Phir (rad) 0,6063 34,6314 83,0702 -36,0000 3,1122 429,6068 44,01 -275 967,0202 19,55 -275 Pgir (deg) 34,7411 34,6314 83,0702 -28,0000 1,9144 429,6068 36,37 -250 967,0202 16,16 -250 Fe/Fm = Magnification 2,2509 34,6314 83,0702 -20,0000 0,9896 429,6068 29,46 -225 967,0202
in „Suche Wellen Adapter "ding" ?“ · Mechanik, Gehäuse, Werkzeug ·
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DS337_2.pdf
ceramic filters to provide good adjacent channel 8 433.425 25 434.275 9 433.475 26 434.325 (1) rejection. Baseband demodulation is recovered 10 433.525 27 434.375 from this IF and applied to a squelch circuit. Therefore, data is only available when a RF signal 11 433.575
in „RFM12 - Funkmodul“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Spezifikationstabelle für Series 900 Disk und Washer Resistors
RoHS Compliant SPECIFICATION Type Style Res. range (Ω) Peak energy (J) Watts Typical weight (g) 911DS Disk 10-750 9,000 9.5 80 912DS Disk 5-350 21,000 12 165 913DS Disk 3-220 33,000 14 275 914DS Disk 2-140 52,500 16 455 915DS Disk 1.5-100 70,000 18 608 913WS Washer 3.5-260 27,600 14 230 914WS Washer
in „Neue Bauteile – kleine Relais, nicht durchbrennende LED-Serienschaltungen und Co“ · Analoge Elektronik und Schaltungstechnik · · Screenshots
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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no autostart/only with default values ->DS1775 ->DS1702K DS275 V24 converter in DS1678-ds1682sch.pdf novram Akku- us.st.com/stonline/books/pdf/docs/7048.pdf us.st.com/stonline/books/pdf/docs/1773.pdf nach cytherm suchen MAX1298 Thermometer with
in „Temperatursteuerung“ · Markt ·
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PDF
R7G_-_T7G.pdf
433.925(2) 2 433.125(2) 19 433.975(2) 3 433.175(2) 20 434.025(2) 4 433.225(2) 21 434.075 (1) 5 433.275(2) 22 434.125(2) 6 433.325(2) 23 434.175(2) 7 433.375(2) 24 434.225(1) 8 433.425(2) 25 434.275(2) 9 433.475(2) 26 434.325 (2) 10 433.525(2) 27 434.375(2) 11 433.575(2) 28 434.425(2) 12 433.625(2) 29
in „LED als Signalanzeige für Funkempfänger R7G“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SBR05M60BLP.pdf
0.815 H D3 B 0.35 0.45 0.40 H 0.05 0.15 0.10 E3 I D 2.90 3.10 3.00 I 0.20 0.30 0.25 E2 D1 1.075 1.275 1.175 J 0.185 0.285 0.235 E K J D2 0.925 1.125 1.025 K 0.065 0.165 0.115 D2 D3 1.075 1.275 1.175 L 0.30 0.60 0.45 E1 D1 M E 2.90 3.10 3.00 M 0.05 0.15 0.10 e - - 1.30 Z - - 0.65 L All Dimensions in
in „kleine SMD Graetz-Brücke gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
d041048.pdf
IRF830A GT FB 1 b 100n 100n ( CY2 C1 C1* 5 CS VCC 12 2x 1mH 265V f R1.1 R1.2 1n 0,5A 33n s m 7 7 6 11 N 275V e 3 4 4 COM ENI D HV9901P S10K275 sCDV-1.0-A / 42V15 10 01l 7 SYNC ENO 10 S07K275 R1: 2%-WiderständeR2 PE 8 9 560k RT POL Vorsicht: Netzspannung - keine galvanischeTrennung! GND lokale Masse - nicht
in „Cree LED an 230V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Bauteile.pdf
20 Bauteil FolienKondensator B81130X2 100nF 250VAC 643 21 Bauteil FolienKondensator KNB1530 0,1µF 275VAC 171 22 Bauteil FolienKondensator X2 275VAC 167 Schaltspannungmax.6000 VAC Dauerstrommax.30 A 23 Bauteil HVRelais RL42 ZweiWechsler 10 20,00€ Fastonanschlüsse 6,3mm Erregerspule24 VDC/200 mA 24 Bauteil
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PDF
P5504EDG.pdf
250µA V Gate Threshold Voltage V GS(th) VDS = VGS ID= -250µA -1 -1.5 -2.5 Gate-Body Leakage IGSS V DS= 0V, VGS = ±20V ±250 nA V = -32V, V = 0V 1 Zero Gate Voltage Drain Current I DS GS DSS V = -30V, V = 0V, T = 125 °C 10 µA DS GS J 1 On-State Drain Current D(ON) V DS= -5V, VGS = -10V -32 A AUG-19-2004
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CYStech_MTB09N03H8.pdf
Min. Typ. Max. Unit Test Conditions Static BV DSS 30 - - V V GS, I D250μA VGS(th) 1.0 1.7 3.0 V V DS= V GSI D250μA G FS *1 - 20 - S V DS=5V, ID=20A GSS - - ± 100 nA V GS20 DSS - - 1 μA V DS=24V, V GS =0 - - 25 V DS=20V, V GS =0, Tj=125°C ID(ON)*1 50 - - A V DS=10V, V GS =10V - 8 9.5 m Ω V GS=10V, ID
in „[S] CYStech MOSFETs“ · Markt ·
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PDF
P2804BDG.pdf
Voltage V (BR)DSS V = 0V, I = 250µA 40 GS D V Gate Threshold Voltage VGS(th) V = V , I = 250µA 1 1.5 2.5 DS GS D Gate-Body Leakage IGSS VDS = 0V, GS= ±20V ±250 nA V DS= 32V, VGS= 0V 1 Zero Gate Voltage Drain Current IDSS µA VDS= 30V, VGS= 0V, TC= 125 °C 10 On-State Drain Current ID(ON) VDS = 10V, GS = 10V
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CAN_Bit_Timing.pdf
SyncSeg = 1TQ PropSeg = t PROP = 1TQ PS1 = SJW MAX = 4TQ PS2 = SJW = 4TQ MAX SJW MAX = 0.4NBT = 4TQ DS00754A-page 8 2001 Microchip Technology Inc. AN754 EXAMPLE 3: Maximum Bit Rate Given the same delays as the previous example: tBUS = 50 m @ 5.5 ns/m = 275 ns The previous example showed that for a given
in „Infos zum CAN Bit-Timing gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AD7376.pdf
ms –42 H –42 V = +15V 50m Lw HO5 A V DD= +15V A W VDD= –15V –48 W V SS= –15V –48 VAMPL= 50mVrms B OP275 V AMPL 50mVrms B OP275 RAB= 1MV 5mS/DIV 1k 10k 100k 1M 100 1k 10k 100k FREQUENCY – Hz FREQUENCY – Hz Figure 14. 10 k Gain vs. Frequency Figure 15. 1 M Gain vs. Frequency Figure 16. Midscale Transition
in „1-10 V digitales Potentiometer“ · Mikrocontroller und Digitale Elektronik ·
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HCS-3602_schematics_opt.pdf
Rl9 L4 250VAC 250VAC r 1% * 1%0K VCC I s 3.3uH RS R6 DS LI 270 10 RS Rl7 R20 Cl7 ESID C23 • C24 ,I * s 10 330K * 330K 220pF/250V 470uF/16V 22uF 1.6mH s 1% 1% R27 +/-25% RlS R21 *10 C25 R7 s 220pF/250V C2 15 331% * 31%K 0.6SuF s CIS D6 L5 275VAC !OOuF ESID 3.3uH J 25V s +5V Cl I I 0.6SuF 275VAC + C27 CIO Ul 0.0luF C19 R33 IOOuF * * IR1150 s R22 R32 C20 PC!~ 120 6.3V RI R2 !SK 0.047uFI !SOK 4700pF IOV lLP781 s i 150K !SOK Rl3 1% 630V R29 * 630V I s s 100 750K I ('' s s 1% D C29 cl I RIO
in „Manson HCS-3602 HCS-3600 Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
beispiel.html
Dispositivos_I2C.lib.zip <br> <ul> <li><b> Dispositivos_I2C.lib </b> 6106 Bytes - <span style="color: blue;"><b> DS1631 </b></span> - <span style="color: blue;"><b> DS1803 </b></span> - <span style="color: blue;"><b> DS3231N </b></span> - <span style="color: blue;"><b> PCA9535 </b></span> - <span style="color: blue
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
IRFP_3703.pdf
D ––– 2.8 3.9 V GS= 7.0V, D = 76A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D ––– ––– 20 µA V DS= 24V, VGS= 0V DSS Drain-to-Source Leakage Current ––– ––– 250 V DS= 24V, VGS= 0V, TJ= 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 V GS= 20V Gate-to-Source Reverse Leakage
in „[Projekt] Einstellbares Netzteil 12V/60A auf 0,5-2,5V/250A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ART2K0FE_2K0FES_2K0FEG.pdf
drain-source breakdown voltage V GS = 0 V; D = 5.5 mA 203 208 - V V GS(th) gate-source threshold voltage V DS = 20 V; D = 550 mA 1.5 2.1 2.5 V I drain leakage current V = 0 V; V = 65 V - - 2.8 A DSS GS DS IDSX drain cut-off current V GS = VGS(th)+ 3.75 V; - 77 - A V = 20 V DS IGSS gate leakage current V GS
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51292S.pdf
the target. FIGURE 2: DIMENSIONS – AC162052, AC162055, AC162056, AC162057 Dimensions are in inches 1.275 0.700 1 J1 P1 Top 1.300 0.825 J2 Target Pin 1 Located on 6 Conductor Bottom side of Header Modular Cable 0.165 Typical 0.560 Typical Side 0.062 Typical 2010 Microchip Technology Inc. DS51292S-page
in „PIC18F877 ICD2 bzw Brenner gesucht :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CJ2303.pdf
Maximum ratings (T a=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 Continuous Drain Current ID -1.9 A Continuous Source-Drain Diode Current IS -0.83 Maximum Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient(t≤
in „Suche Transistor equivalent zu „S3“ SOT-23“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DM0465RE.pdf
Unit R E SenseFET SECTION , F VDS = 650V, GS = 0V 250 D FSDM0465RE V = 520V, V = 0V, T = 125°C 250 M DS GS C 0 Zero Gate Voltage VDS = 650V, GS = 0V 500 5 IDSS Drain Current FSDM0565RE V = 520V, V = 0V, T = 125°C 500 µA 5 DS GS C R VDS = 650V, GS = 0V 500 E FSDM07652RE , VDS = 520V, GS = 0V, C = 125°C
in „Wie von 400 V Gleichspannung auf 5 V für den AVR kommen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SW6007.pdf
支持 BC1.2 DCP 模式 • QFN-32(4x4mm) 封装 支持苹果/三星模式 • Lightni解密 内置 Lightning 解密功能 Mode: iSW_Release_DS066_第 1 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. 4. 功能框图 Mode: iSW_Release_DS066_v1.0 第 2 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO.,
in „I2C: Li/ion Mobile Power Shield SW6007<->SW6115“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm3150.pdf
Device IN-SD VEN = 0V 32 55 µA Shutdown GATE Drive IQ-BST Boost Pin Leakage VBST – VSW = 6V 2 nA R DS-HG-Pull-Up HG Drive Pull–Up On-Resistance HG Source = 200 mA 5 Ω R HG Drive Pull–Down On-Resistance I Sink = 200 mA 3.4 DS-HG-Pull-Down HG Ω R DS-LG-Pull-Up LG Drive Pull–Up On-Resistance LG Source =
in „LM3150 zu geringe Ausgangsspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STD60N55F3.pdf
= 10V, I = 32A DS(on) resistance GS D 6.5 8.5 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit (1) Forward transconductance V =25V, I =32A 50 S gfs DS D Ciss Input capacitance 2200 pF C Output capacitance V = 25V, f = 1MHz, V=0 500 pF oss DS GS Crss Reverse transfer capacitance 25 pF Q g Total gate charge VDD= 27V, D = 65A 33.5 45 nC Q gs Gate-source charge VGS=10V 12.5 nC Q Gate-drain charge 9.5 nC gd (see Figure 15) 1. Pulsed: pulse duration
in „Frage zu MOSFET STF60N55F3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Platinfuch_IIa_BOM_20210217.pdf
1 Produktion 1.000 1.000 1 L4 Inductor Bourns SDR1005 SDR1005-682KL Digi-Key SDR1005-682KLTR-ND 0.275 0.275 42 43 1 L5 Inductor Bourns SDR1005 SDR1005-102KL Digi-Key SDR1005-102KLTR-ND 0.275 0.275 44 2 L6, L7 Inductor Multicomp MCSDC0604 MCSDC0604-150YU Farnell 186-4167 0.123 0.246 45 1 L8 Inductor
in „Platinfuchs IIa: Isolierter, bidirektionaler 45W DC/DC Wandler zum Laden/Entladen eines Liion-Akkus“ · Projekte & Code ·
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PDF
MRF150.pdf
Zero Gate Voltage Drain CurrDSt= 50 V,GS = 0) DSS — — 5.0 mAdc Gate–Body Leakage CurrentGSV= 20 V, DS = 0) GSS — — 1.0 Adc ON CHARACTERISTICS Gate Threshold Voltage (= 10 V, I = 100 mA) V 1.0 3.0 5.0 Vdc DS D GS(th) Drain–Source On–Voltage (V= 10 V, I = 10 A) V 1.0 3.0 5.0 Vdc GS D DS(on) Forward Transconductance (V= 10 V, I = 5.0 A) g 4.0 7.0 — mhos DS D fs DYNAMIC CHARACTERISTICS Input CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Ciss — 400 — pF Output CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer CapacitancDS(= 50 V,GS =
in „Wärmeleitpad gesucht für POWER FET MRF150“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mdlm7301.pdf
otherwise specified Supply Current vs VOS vs VOS vs V CM Supply Voltage Supply Voltage V = ± 1.1V S DS012842-3 DS012842-4 DS012842-5 V OS vs VCM VOS vs VCM Inverting Input, V = ± 2.5V V = ± 15V S S Bias Current vs Common Mode Voltage V = ± 1.1V S DS012842-6 DS012842-7 DS012842-8 5 www.national.com = =
in „Problem mit OP als Spannungsfolger vor ADC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sm6t100a.pdf
are required to provide reliability and stability over time. The SM6T series are packaged in SMB. DS0684 - Rev 14 - September 2024 www.st.com For further information contact your local STMicroelectronics sales office. SM6TxxA, SM6TxxCA Characteristics 1 Characteristics Table 1. Absolute maximum ratings
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2750ny-e.pdf
49 - G *4 Transconductance gfs VDS = 10V, D = 1.7A - 0.6 - S Input capacitance C iss VGS = 0V - 275 - Output capacitance Coss VDS = 800V - 19 - pF Reverse transfer capacitance C rss f = 1MHz - 7 - Effective output capacitance, VGS = 0V energy related C o(er) V = 0V to 800V - 21 - pF DS *4 Turn - on
in „"Leiterbahn-Sicherung" erstezen - was würdet ihr tun?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm35_Temp.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
3454fa.pdf
C 130 mΩ ON Forward Current Limit Switch A 2.5 3.4 A Reverse Current Limit Switch D (VOUT = 3.6V) 275 mA PMOS Switch Leakage Switches A, D –1 1 μA NMOS Switch Leakage Switches B, C –1 1 μA 3454fa 2 LTC3454 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
in „Gibt es Buck-Converter, die einen regelbaren Konstantstrom liefern?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1307.pdf
ORDERING INFORMATION PART TEMP RANGE VOLTAGE (V) PIN-PACKAGE TOP MARK* DS1307+ 0°C to +70°C 5.0 8 PDIP (300 mils) DS1307 DS1307N+ -40°C to +85°C 5.0 8 PDIP (300 mils) DS1307N DS1307Z+ 0°C to +70°C 5.0 8 SO (150 mils) DS1307 DS1307ZN+ -40°C to +85°C 5.0 8 SO (150 mils) DS1307N
in „[V] noch 2 x 10St. Dallas RTC DS1307Z (SO8) abzugeben“ · Markt ·
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PDF
DS1307.pdf
ORDERING INFORMATION PART TEMP RANGE VOLTAGE (V) PIN-PACKAGE TOP MARK* DS1307+ 0°C to +70°C 5.0 8 PDIP (300 mils) DS1307 DS1307N+ -40°C to +85°C 5.0 8 PDIP (300 mils) DS1307N DS1307Z+ 0°C to +70°C 5.0 8 SO (150 mils) DS1307 DS1307ZN+ -40°C to +85°C 5.0 8 SO (150 mils) DS1307N
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PDF
ds1307.pdf
ORDERING INFORMATION PART TEMP RANGE VOLTAGE (V) PIN-PACKAGE TOP MARK* DS1307+ 0°C to +70°C 5.0 8 PDIP (300 mils) DS1307 DS1307N+ -40°C to +85°C 5.0 8 PDIP (300 mils) DS1307N DS1307Z+ 0°C to +70°C 5.0 8 SO (150 mils) DS1307 DS1307ZN+ -40°C to +85°C 5.0 8 SO (150 mils) DS1307N
in „Probleme mit DS1307 und dessen Zeitausgabe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mc14553b-d-1192980.pdf
10 LE Q3 5 Parameter Symbol Value Unit O.F. 14 DC Supply Voltage Range V DD −0.5 to +18.0 V 11 DIS DS1 2 Input or Output Voltage Range Vin −0.5 to DD V DS2 1 (DC or Transient) V out + 0.5 13 MR DS3 15 Input Current (DC or Transient) per Pin Iin ±10 mA V DD= PIN 16 Output Current (DC or Transient) per
in „MC14553BCP - Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sqjq160e.pdf
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mic3202.pdf
Bias Current V = 0V 0.1 1 µA DIM fDIM Maximum Dimming Frequency 20 kHz Internal MOSFET R MOSFET R DS(ON) ILX= 200mA 275 625 mΩ DS(ON) LX Leakage Current V EN= 0V; V INV =LX7V 5 50 µA Thermal Protection T LIM Over-Temperature Shutdown T Jising 160 °C T LIMHYS Over-Temperature Shutdown Hysteresis 20 Notes
in „MIC3202 : welche empfohlene Schaltung ist geeignet?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_Controller.pdf
X 160 SEG MF[2:0] I Manufacturer ID code for reference, suggestion setting [ MF2.MF1.MF0 = 0.0.0 ] DS[1:0] I Display size ID code for reference, suggestion setting [ DS1.DS0 = 1.0 or DS1.DS0 = 0.0] Ver2.3 17/97 2007/1/3 ST7528 MICROPROCESSOR INTERFACE Microprocessor Interface Pin Description Name I/O
in „LCD Controler mit Spannungsregulier-Eingängen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STD5NM50.pdf
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK MDmesh™Power MOSFET TYPE VDSS R DS(on) ID STD5NM50 500V <0.8 7.5 A STD5NM50-1 500V <0.8 7.5 A n TYPICAL R DS(on) = 0.7 n HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3 2 n 100% AVALANCHE TESTED 1 1 n LOW INPUT CAPACITANCE AND GATE CHARGE n
in „Dynamischer Wärmewiderstand => Cth Rth“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
2051.txt
5Vdc o-------+----+---------+----------+ | | ds1232| | --- | 1__ | | +------+-----------+ .1uF --- | -o| |o+ | | | | | +---o| |o-+ 10k | | __ | max275 | | +---o| |o-| ___ | | |o __ | +--------o|__|o-|--|___|--+ | |o +----o| |o----+--------+ | | |
in „Spikes im Lüftertachosignal unterdrücken“ · Mikrocontroller und Digitale Elektronik ·
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RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
Technology Corporation. All rights reserveis a registered trademark of Richtek Technology Corporation. DS9080-05 June 2017 www.richtek.com 1 RT9080 Pin Configuration (TOPVIEW) VOUT SNS/NC 5 4 VOUT 1 4 VIN SGND 2 3 GND 2 5 3 EN VIN GND EN TSOT-23-5 ZQFN-4L 1x1 (ZDFN-4L 1x1) Functional Pin Description Pin
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Clock_LTC1064.pdf
277 139 69 277 139 69 35 452 553 277 138 69 277 138 69 35 453 552 276 138 69 276 138 69 34 454 551 275 138 69 275 138 69 34 455 549 275 137 69 275 137 69 34 456 548 274 137 69 274 137 69 34 457 547 274 137 68 274 137 68 34 458 546 273 136 68 273 136 68 34 459 545 272 136 68 272 136 68 34 460 543 272
in „Digital verstellbarer Analoger Filter“ · Analoge Elektronik und Schaltungstechnik ·
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en.DM00023581.pdf
specifications Figure 3. Current and voltage conventions IIN1 R IN1 D1 INPUT 1 DRAIN 1 V IN2 R IN2 D2 V IN1 DS1 INPUT 2 DRAIN 2 VIN2 SOURCE 1 SOURCE 2 V DS1 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device
in „Trix Mobile Station seltsamer Fehler“ · Mikrocontroller und Digitale Elektronik ·
