2SB1116 datasheet
2SB1116 price
2SB1116 data
2SB1116 ic
NEC PNP SILICON TRANSISTORS
2SB1116, 2SB1116A
DESCR IPTION The 2SB1 1 16/2SB1 1 16A are designed for use in driver
and output
stages of AF amplifier, general purpose application. PACKAGE DIMENSIONS
in millimeters
5.2 MAX.
FEATURES • Low Collector Saturation Voltage.
VCE(sat) = —0.20 V TYP. (Ic = —1.0 A, lB = —50 mA)
• High Break Down Voltage.
VCEO =—50 V/—60V (2SB1116/2SB1116A)
• High Total Power Dissipation. : = 0.75 W (Ta = 25 °C)
• Complementary to the NEC 2SD1616/2SD1616A NPN Transistor.
ABSOLUTE MAXIMUM RATINGS Maximum Temperatures
Storage Temperature
Junction Temperature
Maximum Power Dissipation (Ta = 25 °C) Total Power Dissipation
—55to+150°C
150 C Maximum
Maximum Voltages and Currents (Ta = 25 °C)
VCBO Collector to Base Voltage VCEO Collector to Emitter Voltage VEBO
Emitter to Base Voltage
IC Collector Current (DC)
Ic Collector Current (pulse)*
•PW 10 ms, Duty Cycle 50 %
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2SB1 11 6/2SB1 1 16A
—60 V/—80 V
—50V/—60V
1 2 3 r.-j
1. Emitter EIAJ : SC-43B
2. Collector JEDEC : TO-92
3. Base 1EC : PA33
2S81 116/2SB1 1 16A
hFE1 **
CHARACTER ISTIC DC Current Gain
DC Current Gain
TYP. MAX. UNIT
TEST CONDITIONS VCE = 2.0 V. IC = —100 mA
VCE = —2.0 V. IC —1.0 A
‘EBO VBE**
V CE (sat ) **
VBE(sat)
ton tstg
Gain Bandwidth Product Output Capacitance Collector Cutoff Current
Emitter Cutoff Current Base to Emitter Voltage
Collector Saturation Voltage
Base Saturation Voltage
Turn-On Time
Storage Time
MHz pF
—100 nA
—100 nA
—700 mV
—1.2 V Ps
VCE = —2.0 V. ‘C = —100 mA VCB = —10 V. E = 0, f = 1.0 MHz VCB = —60
VI—80 V. ‘E 0
VEB = —6.0 V, IC = 0
VCE = —2.0 V. Ic = —50 mA
‘c—l•O A, IB—5OmA Jc = —1.0 A, lB = —50 mA
/VCC= —10 V, I= —100 mA
1B1=—IB2—lOmA
tf Fall Time
**Pulsed PW 350 ps, Duty Cycle 2 %
C lassification of hFE1
Rank L K U Range 135to270 200to400 300to600
Test Conditions: VCE —2.0 V, IC = —100 mA
P5 \VBE(off) = 2to3 V
2SB1116,2SB1116A NEC
TYPICAL CHARACTERISTICS (Ta = 25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
JFree Airj
SAFE OPERATING AREAS (TRANSIENT THERMAL RESISTANCE METHOD)
tI[1[IIt I I[I1
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
‘ _200 J
—60 —150 jzA
25 50 75 100 125 150
Ta—Ambient Temperature—C
I =—5OuA
0 —2 —4 —6 —8 —10
VCE—Collector to Emitter Voltage—V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
—1 —2 —5 —10—20 —50—100
VCE—Collector to Emitter Voltage—V
DC CURRENT GAIN vs. >
COLLECTOR CURRENT
1000 >
COLLECTOR AND BASE SATURA TION VOLTAGE vs. COLLECTOR CURRENT
VCE—2.OV
—2 11 [11111
I -{ f[EIIfj
lC=2O•IB
I —0.8
—3.0 mA
.E 200
VBE(sot) .
——2.5 mA—
—2.0 mA
—1.5 mA
-1.0 mA
2-0.2 IB=—O.5 mA
LIJ U
-0.1 till
0.05 —(- uj,IliI
—0.01—0.02 -0.05—0.1—0.2 —0.5—1 —2
0 —0.2 —0.4 —0.6 —0.8 —1.0
—0.01—0.02 —0.05—0.1 —0.2 —0.5—1 —2 —5 —10 >>
IC—Collector Current—A
VCE—Collector to Emitter Voltage—V
IC—Collector Current—A
GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT
OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
SWITCHING TIME vs. COLLECTOR CURRENT
1.11000 -t VCE—2.OV
1 HI H1[
1=1.0 MHz 2
Vyotf)= 2 to 3 V PW2 gS
1 Duty CycIe2 %
0 Cu 0.5 tstg
0 o.1f411
‘LL 111JJ1Nl
—0.01—0.02—0.05 —0.1 —0.2 —0.5 —1 —2 —5—10
IC—Collector Current—A
—1 —2 —5 —10 —20 —50—10
VCB—Collector to Base Voltage—V
—0.01 —0.02 —0.05 —0.1 —0.2 —0.5 —1
IC—Collector Current—A
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