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PDF
2sk3115.pdf
vs. PULSE WIDTH W C ˚ -100 c R th(c=62.5˚C/W n t s e 10 R R th(ch=3.57˚C/W a m r h 1 T n i s a0.1 r - ( 0.01 r 10 100 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13338EJ2V0DS 3 2SK3115 DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN
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TM56E6422-tenxtechnology.pdf
_E 109 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet SOP-14 (150 mil) Package Dimension DS-TM56E6422_E 110 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet SOP-8 (150 mil) Package Dimension DS-TM56E6422_E 111 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet TSSOP-20 (173 mil) Package Dimension DS-TM56E6422_E 112 Rev 0.9, 2024/04/10 TM56E6422 Data Sheet QFN-20 (3x3x0.75-0.4 mm) (L=0.25 mm) Package Dimension DS-TM56E6422_E 113 Rev 0.9, 2024/04/10
in „MCU identifikation/Datenblatt - MC9989A0ZQ“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_32_MX_110_F_016_-_I-SO__11-2-3___SO_28_.pdf
7. “Resets” (DS60001118) • Section 8. “Interrupt Controller” (DS60001108) • Section 9. “Watchdog Timer and Power-up Timer” (DS60001114) • Section 10. “Power-Saving Features” (DS60001130) • Section 12. “I/O Ports” (DS60001120) • Section 13. “Parallel Master Port (PMP)” (DS60001128) • Section 14. “Timers” (DS60001105) • Section 15. “Input Capture” (DS60001122) • Section 16. “Output Compare” (DS60001111) • Section 17. “10-bit Analog-to-Digital Converter (ADC)” (DS60001104
in „pic32 flash und i/o speed“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_32M_X_220_F_032_B-50I-SP_____DIP_28_.pdf
7. “Resets” (DS60001118) • Section 8. “Interrupt Controller” (DS60001108) • Section 9. “Watchdog Timer and Power-up Timer” (DS60001114) • Section 10. “Power-Saving Features” (DS60001130) • Section 12. “I/O Ports” (DS60001120) • Section 13. “Parallel Master Port (PMP)” (DS60001128) • Section 14. “Timers” (DS60001105) • Section 15. “Input Capture” (DS60001122) • Section 16. “Output Compare” (DS60001111) • Section 17. “10-bit Analog-to-Digital Converter (ADC)” (DS60001104
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PDF
IRLZ34.pdf
1000 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( t e r A u ( C 100 n 100 i e 10µs r u D T = 175°C C e J n r a e TJ= 25°C r 100µs e , R 10 D 10 , I D IS 1ms T C = 25°C T J = 175°C 10ms VGS = 0V Single Pulse 1 A 1 A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 VSD , Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ34N 40 R D V DS VGS D.U.T. 30 R G A +
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PDF
irlz34n.pdf
1000 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( t e r A u ( C 100 n 100 i e 10µs r u D T = 175°C C e J n r a e TJ= 25°C r 100µs e , R 10 D 10 , I D IS 1ms T C = 25°C T J = 175°C 10ms VGS = 0V Single Pulse 1 A 1 A 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 VSD , Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ34N 40 R D V DS VGS D.U.T. 30 R G A +
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PDF
NDM3000.pdf
4.5 V, ID= 1.0 A 0.09 0.13 ID(on) On-State Drain Current VGS -10 V, V DS-5 V Q1, Q3, Q5 -10 A VGS 10 V, V DS5 V Q2, Q4, Q6 10 DYNAMIC CHARACTERISTICS C iss InputCapacitance Q1, Q3, Q5 Q1, Q3, Q5 375 pF V = -10 V, V = 0 V, DS GS Q2, Q4, Q6 360 f = 1.0 MHz C oss Output
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PDF
SUM55P06-19L.pdf
DS = - 60 V,GS = 0 V, J = 125 °C - 50 µA V = - 60 V, V = 0 V, T = 175 °C DS GS J - 250 On-State Drain Current I V =- 5 V, V = - 10 V - 120 A D(on) DS GS VGS = - 10 V,DI = - 30 A 0.015 0.019 V GS= - 10
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
plotclock.c
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ThermoBC.c
_PIN PB0 //PC0 Pin soll der W1_PIN sein - in diesem Fall ist es der DataPin vom DS1820 #define W1_IN PINB //Pin abfragen #define W1_OUT PORTB //Ausg?nge ansteuern #define W1_DDR DDRB //Datenrichtung jeweils festlegen - je nach dem ob daten zum DS gesedent, oder vom DS empfangen werden sollen */ // Kommandos an den DS1820 #define MATCH_ROM 0x55 //64 Bit code wird vom Master an ale DS gesendet - nur der DS mit dem Passenden 64Bit "namen" antwortet #define SKIP_ROM 0xCC //Master spricht alle DS simultan an - gefollgt
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PDF
adc0831.pdf
t 0H DS005583-49 DS005583-50 t1H t0H DS005583-51 DS005583-52 Timing Diagrams Data Input Timing Data Output Timing DS005583-24 DS005583-25 ADC0831 Start Conversion Timing DS005583-26 www.national.com 8 Timing
in „Ein an die SPI - Schnittstelle angeschlossener ADC macht Probleme“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRL1004.pdf
= 175 C e )1000 r ( C n 10us i e r u D 10 C 100 100us e i r TJ= 25 C r v , 1ms R D , 1 I 10 10ms D IS C = 25 C J = 175 C V GS = 0 V Single Pulse 0.0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100 V SD ,Source-to-Drain Voltage (V) V DS ,
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opb_emc.pdf
Bank 2 C_MEM2_BASEADDR C_MEM2_HIGHADDR Read/Write Bank 3 C_MEM3_BASEADDR C_MEM3_HIGHADDR Read/Write 10 www.xilinx.com DS421 January 16, 2006 Product Specification OPB External Memory Controller (OPB EMC) (2.00a) Memory Data Types and Organization Memory can be accessed through the OPB EMC as one of three
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PDF
RGB_Bildsensor_-_D100997D.pdf
φ T V e v H t φ φ φ t t I C 1 t T e k G G G O S a I φ T V t m M ( o e T N R Data Sheet S15330EJ4V0DS 9 µPD8872 TIMING CHART 2 (Bit clamp mode, for each color) t1 t2 90% φ1 10% φ2 90% 10% t1' t2' φ1L 90% 10% φ2L 90% 10% t5 t3 t6 t4 t5 t3 t6 t4 φ RB 90% 10% t7 t9 t8 t10t11 t7 t9 t8 t10t11 φ CLB 90% 10%
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PDF
Ferritperlen.pdf
Internal Fig. 3 Fig. 10 *Note: DS 310 Series Footprint for Bulk and Tape & Reel are different. Consult your local MAll DS 310H units are rated at 7A max. and 250VDC. Current rating is 7Amps for bulk packaged units, 6 Amps for
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PDF
A200_MCP1407-EP_MIC.pdf
1.7 r h 1.6 u 100 e 1.5 t 80 h e T 1.4 VLO c 60 u 1.3 i 40 n 1.2 u INPUT = 0 I Q 20 1.1 0 1 4 6 8 10 12 14 16 18 -40 -25 -10 5 20 35 50 65 80 95 110 125 o Supply Voltage (V) Temperature ( C) FIGURE 2-9: Quiescent Current vs. FIGURE 2-12: Input Threshold vs. Supply Voltage. Temperature. DS22019A-page
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PDF
Infineon-ApplicationNote_Linear_Mode_Operation_Safe_Operation_Diagram_MOSFETs-AN-v01_00-EN.pdf
continuously decreasing area specific on-resistances. Consequently, compared to Power-MOSFETs from 10 years ago today’s state of the art Power-MOSFETs utilize a much smaller silicon die area for any given R DS(on) Thus the power handling capabilities of devices for a specific R DS(on)enerally have decreased
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PDF
DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
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PDF
DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
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PDF
23x256.pdf
9 10 11 21 22 23 24 25 26 27 28 29 30 31 SCK Instruction 16-bit Address Data Byte SI 0 0 0 0 0 0 1 0 15 14 13 12 2 1 0 7 6 5 4 3 2 1 0 High-Impedance SO DS22100C-page 6 Preliminary © 2009 Microchip Technology
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
= 10V ( i GS n 100 e r R 2.5 u TJ= 175°C n C O ) r r de2.0 u 10 o l S - a t T = 25°C t o1.5 n J i ( r r D 1 D 1.0 , ,) ID V = 50V o DS S 0.5 ≤ 60μs PULSE WIDTH D 0.1 R 0.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60
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PDF
Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25 °C; SMD R = f(I ); T = 25 °C; SMD D DS j DS(on) D j parameter: V GS parameter: V GS 300 6.5 V 15 5.5 V 6 V 240 13 7V 11 180 ] Ω ] [ 9 [ 10 V n ID 6.5 V S D 120 R 7 7 V 6 V 5 60 10 V 5.5 V 3 5 V 0 1 0 1 2 3 4 0 20 40 60 80 100 120 140 V DS
in „Hilfe bei Halbbrückenschaltung benötigt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
usblc6-2.pdf
10 -15.00 F(Hz) Tj(°C) -20.00 100.0k 1.0M 10.0M 100.0M 1.0G 1 25 50 75 100 125 150 DS4260 - Rev 7 page 3/20 USBLC6-2 Technical information 2 Technical information 2.1 Surge protection The USBLC6-2 is particularly
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PDF
625945.pdf
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = ±25 V, V = 0 V ⎯ ⎯ ±10 μA GSS GS DS Gate-source breakdown voltage V I = ±10 μA, V = 0 V ±30 ⎯ ⎯ V (BR) GSS G DS Drain cut-off current I V = 600 V, V = 0 V ⎯ ⎯ 100 μA DSS DS GS Drain-source breakdown voltage V I = 10 mA, V
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DM8203.pdf
link ready fail 1 0 0 0 Auto-negotiation completed successfully Preliminarydatasheet 39 DM8203-15-DS-P05 October23,2008 DM8203 2-portswitchwithMII /RMIIInterface 8.10 10BASE-T Configuration/Status (10BTCSR) – 12H Bit Bit Name Default Description 15 Reserved 0, RO Reserved Read as 0, ignore on write
in „2 Port Switch IC wie in IP telefonen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DM8203.pdf
link ready fail 1 0 0 0 Auto-negotiation completed successfully Preliminarydatasheet 39 DM8203-15-DS-P05 October23,2008 DM8203 2-portswitchwithMII /RMIIInterface 8.10 10BASE-T Configuration/Status (10BTCSR) – 12H Bit Bit Name Default Description 15 Reserved 0, RO Reserved Read as 0, ignore on write
in „[V] DM8203 & DM8603“ · Markt ·
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Datei
RTC_NVRAM_DUMP.c
DATE_TIME_BYTE_COUNT]; #define RTC_NVRAM_START_ADR 7 #define RTC_NVRAM_END 0x3F #define RTC_ENABLED_MASK 0x10 /****************************************************************************** * Function: void RTC_REG_DUMP(void) * Description: Print RTC register dump for DS1307/DS3231 chip * Uses: none * Returns
in „I2C mit DS3132 - Peter Fleury I2C implementierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
REN_r01ds0145ej0102_v850e2fe4l_DST_20140421.pdf
Chapter 9 Pinning and package specification 9.2 Package specification 64-PIN PLASTIC LQFP(FINE PITCH)(10x10) θ ITEM DIMENSIONS ± ± ± ± ± ± + − + − ± ± θ °− ° NOTE P64GB-50-GAH R01DS0145EJ0102 52 Data Sheet Revision History Version Date Document number Description 1.0 2012-08-30 R01DS0145ED0100 Initial release (previous document was EASE-DS- 0033-1.2) 1.01 2013-09-10 R01DS0145ED0101 Chapter 3: - CPU Start-up time Tcpusu was 750μs typ. - VPOC was 2.80V min. Chapter 7: - VLVI Detection Voltage VRAMHF was 1.80V min. - Added DPIN characteristics
in „Renesas V850 (3572 (A2) FE4-L) auslesen / programmieren?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mcp23008.pdf
C 13 GP3 18-pin PDIP (300 mil) CS 7 M 12 GP2 INT 8 11 GP1 18-pin SOIC (300 mil) 20-pin SSOP VSS 9 10 GP0 SSOP SCK 1 20 VDD SI 2 19 GP7 SO 3 18 GP6 A1 4 8 17 GP5 A0 5 S 16 GP4 2 RESET 6 P 15 GP3 CS 7 C 14 GP2 INT 8 M 13 GP1 VSS 9 12 GP0 N/C 10 11 N/C © 2005 Microchip Technology Inc. DS21919B-page 1 MCP23008
in „MCP23008 Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
564932.pdf
V ID= –1 mA, V DS–10 V 1 Static drain to source on stateRDS(on) — 0.1 0.14 ½ ID= –4 A, VGS = –10 V* 1 resistance — 0.15 0.22 ½ ID= –4 A, VGS = –4 V* 1 Forward transfer admittance |yfs 4 6 — S ID= –4 A, VDS –10 V* Input
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP1403.pdf
6 r 0.3 Both Inputs = 1 ( u - 5 t U e 0.2 O 4 TJ= +25 C s R i 0.1 Both Inputs = 0 u 3 Q 0 2 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-9: Quiescent Current vs. FIGURE 2-12: Output Resistance (Output Supply Voltage. Low) vs. Temperature. DS22022B-page 6 ©
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PDF
ART2K0FE_2K0FES_2K0FEG.pdf
1600 2000 2400 0 400 800 1200 1600 2000 2400 P (W) P (W) L L V = 65 V; f = 108 MHz; t = 100 s; = 10 %. V = 65 V; f = 108 MHz; t = 100 s; = 10 %. DS p DS p (1) IDq = 50 mA per section (1) IDq = 50 mA per section (2) IDq = 100 mA per section (2) IDq = 100 mA per section (3) IDq = 200 mA per section
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PDF
SI7611.pdf
≤ - 5 V,GS = - 10 V - 10 A V = - 10 V, I = - 9.3 A 0.021 0.025 Drain-Source On-State Resistancea RDS(on) GS D Ω V GS = - 4.5 VD I = - 8.1 A 0.027 0.033 a g V = - 15 V, I = - 9.3 A Forward Transconductance fs DS D 25 S
in „gleichwertiger Ersatztyp für Mosfet gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
JMTK4004A.pdf
Characteristics Figure 6: Capacitance Characteristics VGS(V) 5C(pF) 10 10 VDS=20V D=30A 8 4 Ciss 10 6 4 103 C oss 2 C rss Q g(nC) 102 V DS(V) 0 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 40 JieJie Microelectronics CO. , Ltd Version :1.0 - 3 - JMTK4004A Figure 7: Normalized
in „Bauteil Identifikation SMD erwünscht => MosFet?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AVR128DA28_32_48_64.pdf
529) Custom Logic (LUTs) 1(4) 1(4) 1(6) 1(6) Watchdog Timer (WDT) 1 1 1 1 Event System channels 8 8 10 10 © 2020 Microchip Technology Inc. Preliminary Datasheet DS40002183A-page 2 AVR128DA28/32/48/64 ...........continued AVR128DA28 AVR128DA32 AVR128DA48 AVR128DA64 Feature AVR64DA28 AVR64DA32 AVR64DA48
in „AVR64EA28: PIT-Interrupt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FQPF6N90C.pdf
Variation with Source Current and Temperature 2000 C =C +C (C =shorted) 12 C =C +C gd ds Crss gd gd VDS180V Ciss 10 VDS450V 1500 V =720V [ DS e8 F t [ C o c1000 oss V6 t r c o p ※Notes: - C 2.f=1MHz a4 500 G C G rss V2 ※Note:ID=6A 0 0 -1 0 1 0 5 10 15 20 25 30 35 10 10 10 V ,Drain-SourceVoltage
in „Suche MOSFET und passenden Treiber mit galvanischer Trennung für Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SMDB3.pdf
220 V C = 0.1 µF P 50 Hz Vo T410 R = 20 Ω DS2125 - Rev 3 page 3/11 DB3, DB4, SMDB3 Characteristics Figure 3. Rise time measurement p 90 % 10 % t r DS2125 - Rev 3 page 4/11 DB3, DB4, SMDB3 Characteristics (curves) 1.1 Characteristics curves Figure
in „Diac und Triac in einem Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
_ATSAMD20E18A-MU.pdf
directly. Refer to the Product Mapping for PAC locations. Related Links Product Mapping 10.6.1 PAC0 Register Description © 2017 Microchip Technology Inc. Datasheet Complete DS60001504B-page 41 SAM D20 Family Processor And Architecture 10.6.1.1 Write Protect Clear Name: WPCLR Offset: 0x00 Reset
in „Exposed Pad anschließen? (ATSAMD20E18A-MU und ELMOS E981.03)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDT455N.pdf
= V , I = 250 µA 1 1.5 3 V GS(th) DS GS D 0.7 0.9 2.2 TJ= 125°C Static Drain-Source On-Resistance 0.013 0.015 R DS(ON) VGS 10 V, I D 11.5 A Ω TJ= 125°C 0.019 0.03 VGS 4.5 V, ID= 10 A 0.018 0.02 ID(on) On-State Drain Current VGS 10 V ,V =DS V 30 A VGS 4.5 V, V DS5 V 15 gFS Forward Transconductance VGS 10 V, ID= 11.5 A 26 S DYNAMIC CHARACTERISTICS C iss InputCapacitance VDS 15, V GS0 V, 1220 pF Output Capacitance f = 1.0 MHz 715 pF C oss
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no
in „Temperatursteuerung“ · Markt ·
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PDF
SW6007.pdf
单位为 mAh，Rset 单位为Ω。 Mode: iSW_Release_DS06第 10 页 共 19 页 www.ismartware.com 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. 电量计的恒流充电时间参数可配置。在 I2C模式下，此参数通过寄存器设置。在 LED 显示模式下， 此参数通过 LED3/IRQ P设置，可通过 LED3/IRQ P是否对地接 100K电阻进行设置。 9.9 ADC SW6007内部集成了
in „I2C: Li/ion Mobile Power Shield SW6007<->SW6115“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TM56M152A-tenxtechnology.pdf
power consumption at slow mode 25. Package Types: 16-pin SOP (150 mil) 14-pin SOP (150 mil) 10-pin MSOP (118 mil) 8-pin SOP (150 mil) 16-pin QFN (3*3*0.75 - 0.5mm) 10-pin DFN (3*3*0.75 - 0.5mm) 26. Supported EV board TM56F1552/22 DS-TM56M152A_E 10 Rev 0.96, 2024/05/16 TM56M152A Data Sheet
in „MCU identifikation/Datenblatt - MC9989A0ZQ“ · Mikrocontroller und Digitale Elektronik ·
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Datei
source.txt
-----------------------------------------------*/ /* write temp from DS1620 */ /*----------------------------------------------------------------------*/ void Write1620byte(char m) { unsigned char k,b=1; pd10_1=0xff; RST=1; for (k=0; k<10; k++) { CLK=0; asm ("NOP"); asm
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PDF
CS4272.pdf
) Figure 44. DAC Quad Speed (slow) Passband Ripple 52 DS593PP3 CS4272 0 0 -10 -10 -20 -20 -30 -30 -40 -40 -50 -50 B B ( -60 ( -60 d e t -70 u -70 p l m -80 p A A -80 -90 -90 -100 -100 -110 -110 -120 -120 -130 -130 -140 -140 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
in „was ist "ATAPI channel mixing" Warum kein Ausgangssignal?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZXLD1366.pdf
U S 20 1.2390 1.2385 10 1.2380 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) ZXLD1366 15 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A
in „Spannungsteiler zwischen Arduino und KSQ“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2097320.pdf
U S 20 1.2390 1.2385 10 1.2380 0 0 10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) ZXLD1366 15 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A
in „ZXLD1366 Beschaltung ADJ Pin“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
25AA640A_25LC640A-MIC.pdf
1,1 8 3 SCK Mode 0,0 5 6 SI MSB in LSB in High-Impedance SO FIGURE 1-3: SERIAL OUTPUT TIMING CS 9 10 3 Mode 1,1 SCK Mode 0,0 13 15 14 SO MSB out ISB out Don’t Care SI 2003-2013 Microchip Technology Inc. DS21830F-page 5 25AA640A/25LC640A 2.0 FUNCTIONAL DESCRIPTION 2.1 Principles of Operation 2.3 Write
in „Atmega 328p uint16_t auf EEPROM per SPI geht nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PAN1555__ENW89815A__Datasheet.pdf
Downloaded froArrow.com. CLASSIFICATION PRODUCT SPECIFICATION No. REV. Einstufung Produktspezifikation DS-1x55-2400-102 1.10 SUBJECT CLASS 2 BLUETOOTH MODULE PAGE Thema Bluetooth Modul der Klasse 2 Seite 10 of 34 CUSTOMER’S CODE PANASONIC’S CODE DATE PAN1455/1555 ENW89815CxKF/ENW89815AxKF Datum 27.06.2011
in „Bluetooth-Modul "BlueMod+P25" von Stollmann - Ersatztyp“ · Mikrocontroller und Digitale Elektronik ·
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PDF
K4097.pdf
200V IN DD 10V L 0V ≥50Ω I =5A V R =40Ω RG IN L D VOUT PW=10µs 2SK4097LS D.C.≤0.5% 10V V 0V 50Ω DD G 2SK4097LS P.G R GS=50Ω S No.A0775-2/5 2SK4097LS I -- V I -- V 30 D DS 30 D GS Tc=25°C V DS =20V 25 25 Tc= --25°C 15 V 25°C A 1 0V A - 20 8V - 20 ID ID 7 5°C t t e 15 e 15 u u C C a 10 a 10 r r D D 6V 5 5 V =5V GS 00 5 10 15 20 25 30 00 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, V DS -- V IT12372 Gate-to-Source Voltage, V GS -- V IT12373 R DS (on) -- V GS R DS (on) -- Tc 2.0
in „MOSFET (K4097) Ersatztyp“ · Analoge Elektronik und Schaltungstechnik ·
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2sk1402.pdf
voltage V 2.0 — 3.0 V I = 1 mA, V = 10 V GS(off) D DS Static drain to source K1402 R — 1.8 2.4 I = 2 A, V = 10 V *1 DS(on) D GS on state resistance K1402A — 2.0 2.6 Forward transfer admittance |yfs| 2.2 3.5 — S ID= 2 A, V DS= 10 V *1 Input
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·