Electrical characteristics LM217, LM317
4 Electrical characteristics
VI - VO = 5 V, IO = 500 mA, IMAX = 1.5 A and PMAX = 20 W, TJ = - 55 to 150 °C, unless otherwise specified.
Table 4. Electrical characteristics for LM217
Symbol Parameter Test conditions Min. Typ. Max. Unit
ΔVO Line regulation VI - VO = 3 to 40 V TJ = 25°C 0.01 0.02 %/V
0.02 0.05
ΔVO Load regulation VO ≤ 5 V IO = 10 mA to IMAX TJ = 25°C 5 15 mV
20 50
set +# CONFIG_SENSORS_LM83 is not set +# CONFIG_SENSORS_LM85 is not set +# CONFIG_SENSORS_LM87 is not set +# CONFIG_SENSORS_LM90 is not set +# CONFIG_SENSORS_LM92 is not set +# CONFIG_SENSORS_LM93 is not set +# CONFIG_SENSORS_LTC4215
set +# CONFIG_SENSORS_LM83 is not set +# CONFIG_SENSORS_LM85 is not set +# CONFIG_SENSORS_LM87 is not set +# CONFIG_SENSORS_LM90 is not set +# CONFIG_SENSORS_LM92 is not set +# CONFIG_SENSORS_LM93 is not set +# CONFIG_SENSORS_LTC4215
L National Semiconductor M LM5070 "AE" Evaluation Application Note 1358 5 0 Board Joseph DeNicholas 0 January 2005 " A Introduction Classification Mode E " The LM5070 AE (Area Efficient) evaluation board is de- To classify the PD
Vo + m s Vo + + I I + I C1 - in s in + Vin Co Ro Vin + C o R o - Vgs S - V S C 2- D 2 gs t0 1 t1 2 Lm V + Lm Ls Vo + o + - + I in C1 + in Vin Co Ro Vin Co Ro S D 1 D2 - S - Vgs Vgs t2 3 t3 4 81 Lm Ls V o + Lm Vo + + - + Iin C 1 + in D 1 Vin C R V in Co Ro D1 + o o + D 3 - C2 - - D1 -C2 t4 5 t5 6 m Ls V + Lm Ls Vo + + o + - I ILs C1 in +C1 V in D1 + Vin in Co Ro D Co Ro - D2 D3 - 3 t6 7 t7 8 L L D o V + m s o + Iin Vin Co Ro - t 8 9 Simulation 82 2.0V V 0V gs 8.0A v(pulse) D -0.0A o 25A i(dout) D -5A 1 20A
5 7 B 5V D M 5 35701331 K1 3 1 7 k5 2 KK1 1 BUZ11 IC3 FK209 3 K J4 GND 1 R 1 7 N 3 LM2576?ADJ 1 7 N 1 G 0 P$1 P$4 1 G 1 4 5 IN FB P$2 D L1 1 5 3 K 3 GND + C17 C16 OUT S 3 K 5 3 1D 5 3 D 7 F 0 100µH_SDR1005-101KL 1 7N N 3 10µ/351µ/35V_cer D * 3 K 4 7 3G 5V G 1 C 1 2 N N S C18 C23C25 2 R 3 T B 2 R G O R C22 + + 3K R25 3 K R19 5 B MBR750 1 1 MBR750 1 1 3 5 D M 1µ/35V_cer0Vµ/_21C50eVµK/_2C5eVr_Cer D10 0 R27Z 2.1k D8 0 R20 2.1k P P 8 R 5 3 U 5 2 U K 0 3 10k BC337 3 10k BC337 . 1 5V T3 T2 2 R KK3 GND +24V FK209 J6 1 LM2576
5 7 B 5V D M 5 35701331 K1 3 1 7 k5 2 KK1 1 BUZ11 IC3 FK209 3 K J4 GND 1 R 1 7 N 3 LM2576?ADJ 1 7 N 1 G 0 P$1 P$4 1 G 1 4 5 IN FB P$2 D L1 1 5 3 K 3 GND + C17 C16 OUT S 3 K 5 3 1D 5 3 D 7 F 0 100µH_SDR1005-101KL 1 7N N 3 10µ/351µ/35V_cer D * 3 K 4 7 3G 5V G 1 C 1 2 N N S C18 C23C25 2 R 3 T B 2 R G O R C22 + + 3K R25 3 K R19 5 B MBR750 1 1 MBR750 1 1 3 5 D M 1µ/35V_cer0Vµ/_21C50eVµK/_2C5eVr_Cer D10 0 R27Z 2.1k D8 0 R20 2.1k P P 8 R 5 3 U 5 2 U K 0 3 10k BC337 3 10k BC337 . 1 5V T3 T2 2 R KK3 GND +24V FK209 J6 1 LM2576
Tj 125 °C Junction temperature Durchlassstrom (min.) F 100 mA Forward current (max.) F 1000 mA (T =25°C) A Stoßstrom FM 2000 mA Surge current t ≤10 μs, D = 0.005,TA=25°C Sperrspannung V not designed for V R Reverse voltage reverse operation (TA=25°C) Leistungsaufnahme Ptot 3.8 W Power consumption (T
THERMAL GAIN SET AT 3.66 +5V 0C - 1.8V FOR 4.4V AT 55C, FAN SPEED +15V BE DISCLOSED, REPRODUCED OR USED 25C - 1.58V EMITTER R B PRODUCTION RELEASED PER ECO 8550 03/15/08 RAB DD WITHOUT EXPRESS WRITTEN CONSENT FROM 55C - 1.2V 0C - NIL 65C - 1.07V C45 +15V 25C - NIL 16v EMITTER RESISTORS HAVE NEW PART NUMBER
THERMAL GAIN SET AT 3.66 +5V 0C - 1.8V FOR 4.4V AT 55C, FAN SPEED +15V BE DISCLOSED, REPRODUCED OR USED 25C - 1.58V EMITTER R B PRODUCTION RELEASED PER ECO 8550 03/15/08 RAB DD WITHOUT EXPRESS WRITTEN CONSENT FROM 55C - 1.2V 0C - NIL 65C - 1.07V C45 +15V 25C - NIL 16v EMITTER RESISTORS HAVE NEW PART NUMBER
. Finally, Figure 6 shows the results of testing the noise of the LM317 versus load. Figure 5: The LM317 was tested with various combinations of Cout and Cbypass capacitors (see Figure 4). For comparison a 12 Volt Zener diode biased at 1 mA is also plotted. The LM317
current vs. forward voltage 35 current and temperature 3.0 30 t Normalized to: IP1F I =10 mA, m e 2.5 T =25°C, -25 r 0°C A n c 25°C VD=–15 V e t 2.0 50°C u20 h C P 1.5 75°C D15 d E i -10 a 1.0 I r 5 o 0.5 N 0 0.0 1.0 1.1 1.2 1.3 1.4 0 5 10 15 20 25 VF - LED Forward Voltage - V IF- LED Current - mA Figure 3
Elektronisch stabilisiertes Netzteil 0 V - 25 V / 1 A
Pos. Kennzeichnung Anz. Beschreibung Technische Daten Bestellnummer Lieferant Preis € o.k.
F1 Sicherungshalter 1 5x20 mm, 12,7 mm - Bohrung PL FPG1-40 Reichelt 0,96
F1 Feinsicherung 1 800 mA
is subject to change without notice. 1 NPT LED 0.5W HIGH POWER SMD LED Flux Characteristics (T j= 25°C ;FI = 150)A CCT Range Luminous Color (K) Flux(lm) Ordering Code White 5500~6500 25~35 NPT05W0255565D White 5500~6500 35~45 NPT05W0355565D Warm White 2700~3300 NPT05W0252733D 25~35 Warm White 2700~3300
Untersuchung der Line-Regulation von kaskadierten Spannungsreglern am Beispiel des LDOs LM1086 sowie Besonderheiten beim Messen MNI 10. Sept. 2012 V. 1.0 Inhaltsverzeichnis Messgeräte...........................................................................................................
. 25 Quarzfilter, eine kleine Zusammenfassung DJ6EV Bild 25 Dual Half-Lattice-Filter mit 4 FT243-Quarzen, Darstellbreiten 10kHz und 50kHz. Das rechte Bild zeigt deutlich, warum solche Selbstbaufilter für
. 25 Quarzfilter, eine kleine Zusammenfassung DJ6EV Bild 25 Dual Half-Lattice-Filter mit 4 FT243-Quarzen, Darstellbreiten 10kHz und 50kHz. Das rechte Bild zeigt deutlich, warum solche Selbstbaufilter für
. 25 Quarzfilter, eine kleine Zusammenfassung DJ6EV Bild 25 Dual Half-Lattice-Filter mit 4 FT243-Quarzen, Darstellbreiten 10kHz und 50kHz. Das rechte Bild zeigt deutlich, warum solche Selbstbaufilter für
. 25 Quarzfilter, eine kleine Zusammenfassung DJ6EV Bild 25 Dual Half-Lattice-Filter mit 4 FT243-Quarzen, Darstellbreiten 10kHz und 50kHz. Das rechte Bild zeigt deutlich, warum solche Selbstbaufilter für
for Acriche 1. Pure white–AW2204, AW2214 1-1 Electro-Optical characteristics at 100V/110V RMS, A =25ºC Value Parameter Symbol Unit Min Typ Max Luminous Flux [1] Ф [2] - 80 - lm V Illuminance [3] Ф 91 lx l [4] Correlated Color Temperature CCT - 6500 - K CRI R a - 70 - - Operating Current Iopt - 20 -
u 4 K 2 SN65HVD234D C +3V3 S R 1 P Wechselr P0 V LM393D N P_Ofen P1 SDA I2C_Dat1 K12 K2X5 IC15a g Debug-Port +3V3 TestLEDM1 K3 +12Vi u r R19 47K P_Heizung P2 SCL I2C_Clk1 IC15b e i i P_Brauchw +3V3 BSS123 T16 LM393D O H B 4 P3 INT\ TA_3 TA_2 Hupe _ _
shows how it’s done. Zener diode D1 ensures that course, if the required output current is less than 25 mA, RS the LM317H sees only a 5V input-output differential over thean be increased to reduce the size of the heat sink needed.u p l e s 00733501 C1, C2: 1 µF, 200V MYLARr *Heat Sink FIGURE 1. Basic High
4 S-00788—Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VDand Single Power Supply Voltages Leakage Currents vs. Analog Voltage 250 40 V+ = 22 V ) 225 V+ = 5 V V– = –22 V W 30 T = 25_C ( 200 A c a 20 D(on) i 175 A e ( 10 - 150 7
4 S-00788—Rev. H, 24-Apr-00 DG211B/212B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VDand Single Power Supply Voltages Leakage Currents vs. Analog Voltage 250 40 V+ = 22 V ) 225 V+ = 5 V V– = –22 V W 30 T = 25_C ( 200 A c a 20 D(on) i 175 A e ( 10 - 150 7
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