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ADS1211.pdf
19.5 age Step or ADS1211 Channel Change to Fully 60 1.25 8 19.5 60 0.625 16 19.5 Settled Output Data. 100 10 1 18.0 100 5 2 18.0 TURBO MODE 100 2.5 4 18.0 The ADS1210/11 offers a unique Turbo Mode feature which 100 1.25 8 18.0 100 0.625 16 18.0 can be used to increase the modulator sampling rate by 2, 4
in „Hardware SPI vs. BIT BANGING AD Wandler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
INF-8074i.pdf
compatibility (see Table 3.4) 11 1 Encoding Code for serial encoding algorithm (see Table 3.5) 12 1 BR, Nominal Nominal bit rate, units of 100 MBits/sec. 13 1 Reserved 14 1 Length(9m) - km Link length supported for 9/125 mm fiber, units of km 15 1 Length (9m) Link length supported for 9/125 mm fiber,
in „SFP - Single Fibre Port Chip Ansteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
715G7312_PSU.pdf
BD9902 NC 3 NC TS10P06G-04 ! 4 4 - + 1 1 R9903 R9904 2 510K 1/4W 510K 1/4W ! U9901 CAP004DG-TL NC BR_IN 3 1 2 3 4 C9903 C 1 1C 100PF 500V ! N D DN R9906 R9905 NC NC N D D N ! GND1 GND2 100PF 500V 8 7 6 5 1 1 2 R9907 R9908 FB9904 510K 1/4W 510K 1/4W HOT 127R ! GND GND ! 1 C9917 C9916 470pF 250V 1 GND3
in „Phillips 55PUS6561/12 keine Hintergrundbeleuchtung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lmh6629.pdf
100k 1M 10M 100M 1G 100k 1M 10M 100M 1G f (Hz) f (Hz) Figure 4. Figure 5. Non-Inverting Frequency Response Non-Inverting Frequency Response 1 1 Vo = 2Vpp Vo = 1Vpp (COMP Pin = LO) Vs = +/-1.5V Av = 4V/V 0 0 B B (-1 Av = 200V/V ( -1 i Av = 100V/V i Av = 200V/V a a d-2 Av = 30V/V d -2 Av = 100V/V z z a a Av = 30V/V m Av = 4V/V m o-3 (COMP Pin = LO) o -3 N N Av = 10V/V Av = 10V/V -4 -4 -5 -5 100k 1M 10M 100M 1G 100k 1M 10M 100M 1G f (Hz) f
in „Ausgangswiderstand in OPV Datenblatt“ · HF, Funk und Felder ·
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PDF
Regler_LM3488.pdf
(RoHS CU SN Level-1-260C-UNLIM & no Sb/Br) LM3488QMMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS CU SN Level-1-260C-UNLIM & no Sb/Br) (1The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY
in „Kein PWM-Signal bei DC-DC Wandler; 12->140V“ · Analoge Elektronik und Schaltungstechnik ·
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Schaltplan_HEM_4PA.pdf
1 2 3 4 5 6 7 2X1 T1 BR1 80V, 1,5A AC S1 _ 2A mT U1 230 VAC + 78S05 C1 C2 C3 R1 R2 AC 1000uF 100nF 100nF R3 R4 2X2 10 kOhm 10 kOhm 10 kOhm 10 kOhm 1X1 1X2 1X3 A Aus 3bar Temp.1 A 1X4 1X5 1X6 Pri: 2x 115VAC Sek: 2x 12VAC BR2
in „Probleme ATmega8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
slau056e.pdf
) 1) UxBR ) 3 –4 Ǔ 100% + 2.83% BRCLK ǒbaud rate Ǔ Data bit D3 Error [%] + BRCLK (4 ) 1) UxBR ) 3 –5 100% +*1.95% Data bit D4 Error [%] +bBRCLKate (5 ) 1) UxBR ) 4 –6 Ǔ 100% + 0.59% Data bit D5 Error [%] +baud
in „MSP430 LCD Controller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
slau056e.pdf
) 1) UxBR ) 3 –4 Ǔ 100% + 2.83% BRCLK ǒbaud rate Ǔ Data bit D3 Error [%] + BRCLK (4 ) 1) UxBR ) 3 –5 100% +*1.95% Data bit D4 Error [%] +bBRCLKate (5 ) 1) UxBR ) 4 –6 Ǔ 100% + 0.59% Data bit D5 Error [%] +baud
in „MSP430FG439 mit LCD“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRG4BC20U_INR.pdf
Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltag600 V VGE = 0V,CI = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltag1 8 V GE = 0V,CI = 1.0A ∆V(BR)CESJ Temperature Coeff. of Breakdown Volta e 0.69 V/°C VGE
in „LED Stripe über IGBT schalten“ · Analoge Elektronik und Schaltungstechnik ·
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Vishay_Diode_Marking.pdf
P4SMA82A 82A 82C SMA5J7.0A 5AM 5AM BYG10K BYG10K P4SMA91A 91A 91C SMA5J7.5 5AN 5AN BYG10M BYG10M P4SMA100A 100A 100C SMA5J7.5A 5AP 5AP BYG10Y BYG10Y P4SMA110A 110A 110C SMA5J8.0 5AQ 5AQ BYG20D BYG20D P4SMA120A 120A 120C SMA5J8.0A 5AR 5AR BYG20G BYG20G P4SMA130A 130A 130C SMA5J8.5 5AS 5AS BYG20J BYG20J P4SMA150A
in „Unbekanntes Bauteil“ · Mikrocontroller und Digitale Elektronik ·
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marking.pdf
P4SMA82A 82A 82C SMA5J7.0A 5AM 5AM BYG10K BYG10K P4SMA91A 91A 91C SMA5J7.5 5AN 5AN BYG10M BYG10M P4SMA100A 100A 100C SMA5J7.5A 5AP 5AP BYG10Y BYG10Y P4SMA110A 110A 110C SMA5J8.0 5AQ 5AQ BYG20D BYG20D P4SMA120A 120A 120C SMA5J8.0A 5AR 5AR BYG20G BYG20G P4SMA130A 130A 130C SMA5J8.5 5AS 5AS BYG20J BYG20J P4SMA150A
in „Suche Datenblatt zu S422“ · Mikrocontroller und Digitale Elektronik ·
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marking.pdf
P4SMA82A 82A 82C SMA5J7.0A 5AM 5AM BYG10K BYG10K P4SMA91A 91A 91C SMA5J7.5 5AN 5AN BYG10M BYG10M P4SMA100A 100A 100C SMA5J7.5A 5AP 5AP BYG10Y BYG10Y P4SMA110A 110A 110C SMA5J8.0 5AQ 5AQ BYG20D BYG20D P4SMA120A 120A 120C SMA5J8.0A 5AR 5AR BYG20G BYG20G P4SMA130A 130A 130C SMA5J8.5 5AS 5AS BYG20J BYG20J P4SMA150A
in „Suche die Bezeichnung eines Bauteils“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
88912_Marking_Diodes_Vishay-061201.pdf
P4SMA82A 82A 82C SMA5J7.0A 5AM 5AM BYG10K BYG10K P4SMA91A 91A 91C SMA5J7.5 5AN 5AN BYG10M BYG10M P4SMA100A 100A 100C SMA5J7.5A 5AP 5AP BYG10Y BYG10Y P4SMA110A 110A 110C SMA5J8.0 5AQ 5AQ BYG20D BYG20D P4SMA120A 120A 120C SMA5J8.0A 5AR 5AR BYG20G BYG20G P4SMA130A 130A 130C SMA5J8.5 5AS 5AS BYG20J BYG20J P4SMA150A
in „Bauteil identifizieren diode, SMC, "G DE 47"“ · Mikrocontroller und Digitale Elektronik ·
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Datei
demo-bom.html
Weichinger snaky.1@gmx.at</p> <h1>BOM: Projektname</h1> <p><b>Created:</b>Sam 23 Jul 2016 22:06:48 CEST<br><b>Rev:</b>16.07<br><b>Company:</b>Firma<br><b>Source:</b>projekt.sch<br><b>File:</b>......projekt.sch</p> <div id="BOM1"> <h2>BOM-Grouped by Value and Footprint [<a onclick='var element = document.getElementById
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Futro_S700_fuer_Freifunk_nutzen.pdf
gateway '::' option proto 'dhcpv6' option interface 'loopback' option sourcefilter '0' option ifname 'br-wan' config interface 'mesh_wan' option ip6table '1' option ifname 'br-wan' option peerdns '0' option auto '0' option transitive '1' config switch option fixed_mtu '1' option name 'switch0' option proto
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mpsa42.pdf
Max Units M B OFFCHARACTERISTICS T V Collector-Emitter Breakdown Voltage* I = 1.0 mA, I = 0 300 V A (BR)CEO C B 4 V (BR)CBO Collector-Base Breakdown Voltage C = 100 µ, IE= 0 300 V 2 V (BR)EBO Emitter-Base Breakdown Voltage E = 100 µ, IC= 0 6.0 V / I Collector-Cutoff Current V = 200 V, I = 0 0.1 A P CBO
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Datei
0.4.25_SD_Setup.diff
serEn\">print inverter data</label><input type=\"checkbox\" class=\"cb\" name=\"serEn\" {SER_VAL_CB}/><br/><label for=\"serDbg\">print RF24 debug</label><input type=\"checkbox\" class=\"cb\" name=\"serDbg\" {SER_DBG_CB}/><br/><label for=\"serIntvl\">Interval [s]</label><input type=\"text\" class=\"text\"
in „Wechselrichter Hoymiles HM-xxxx 2,4 GhZ Nordic Protokoll?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
0.4.25_SD_Setup_V2.diff
serEn\">print inverter data</label><input type=\"checkbox\" class=\"cb\" name=\"serEn\" {SER_VAL_CB}/><br/><label for=\"serDbg\">print RF24 debug</label><input type=\"checkbox\" class=\"cb\" name=\"serDbg\" {SER_DBG_CB}/><br/><label for=\"serIntvl\">Interval [s]</label><input type=\"text\" class=\"text\"
in „Wechselrichter Hoymiles HM-xxxx 2,4 GhZ Nordic Protokoll?“ · Mikrocontroller und Digitale Elektronik ·
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lm5107_MOSFET_Treiber.pdf
Hysteresis 0.4 V BOOT STRAP DIODE VDL Low-Current Forward Voltage IVDD-HB= 100 µA 0.58 0.9 V VDL = VDD - VHB VDH High-Current Forward Voltage IVDD-HB= 100 mA 0.82 1.1 V VDH = VDD - VHB RD Dynamic Resistance IVDD-HB= 100 mA 0.8 1.5 Ω LO GATE DRIVER VOLL ILO= 100 mA Low-Level Output
in „Spannungsversorgung IC 50V auf 12V/5V regeln“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P5504EDG.pdf
Logic Level Enhancement P5504EDG Mode Field Effect Transistor TO-252 Lead-Free D PRODUCT SUMMARY V(BR)DSS R DS(ON) ID G 1. GATE -40V 55mƸ -8A 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (T = 25 °C Unless Otherwise Noted) C PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -40
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tps65136.pdf
to negstart 6 8.7 11 ms V Feedback ground regulation –10 0 10 mV FBG M1 MOSFET on-resistance sw = 100 mA 200 M2 MOSFET on-resistance sw = 100 mA 400 rDS(on) mΩ M3 MOSFET on-resistance sw = 100 mA 900 M4 MOSFET on-resistance I = 100 mA 600 sw SW Switch current limit (M2) Vin 3.7 V 620 700 940 mA Vin
in „OLED Sammelbestellung“ · Markt ·
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PDF
ISO1050.pdf
TEMPERATURE 100 3.5 V O CANH I 2 = 5 V 3 CC A - - t e e a 2.5 r l C V y 10 t p t u u 2 S O - -O IC V I 1 = 5 V CC 1.5 VO= CANL I 1 = 3.3 V 1 CC 1 250 350 450 550 650 750 850 950 -60 -40 -20 0 20 40 60 80 100 120 Signaling
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Datei
webpage.h
r\n" "<div id=\"nav\"><a href=\"index.htm\">Home</a><a href=\"status.htm\">Status</a></div>\r\n" "<br><br>\r\n" "<div style=\"width:200px;margin: 0 auto;\">\r\n" "<div style=\"float:left;width:100px\">\r\n" "<form method=\"post\" action=\"index.htm\">\r\n" "<input name=\"OUT\" type=\"hidden\" value=\
in „AVR Webserver Radig eingabe speichern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162828-da-01-en-IRLML_2803TR.pdf
Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250µA (BR)DSS GS D ∆V(BR)DSSJ Breakdown Voltage Temp. Coefficient 0.029 V/°C Reference to 25°C,DI = 1mA 0.25 V = 10V, I = 0.91A RDS(on) Static Drain-to-Source On-Resistance Ω GS D 0.40 VGS = 4.5V,DI = 0.46A V
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
K176IE18_VFD_IV6y.pdf
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - UH=1,2V~ 100 R8 100k __________ R9 100k F1 V R10100k _____ 100 0,24V~ Tr1 , R21 1,8 br 8 R11100k V 63mA + 8 D4 R22 1,8 1,4V~ . R12100k , BZY8,2 blck , 7 7 R13100k C7 gr C9 - _____ 22nF 230V~ R14100k B40C1500 0,1 6,3V~ /1000V Vcc(+9V) (+) (-) 5 bl 0V(GND) 0 R23 0,1 w f g e d c b a R15 R16 R7 R17 R18 1 10k Br1 12,6V~ 100k 100k 12k 100k 100k 0 Brightn. C8 16 15 14 13 12 11 10 9 gr n IC3 K176ИД3 C5 _____ 1 2 3 4 5 6 7 8 H10 H01 M10 M01 470uF /35V 128Hz 26,4V V , D2 D1 D3 D0 Vcc(+9V) R24 1 blkg 2,2k . -C- 1
in „LED-Uhr mit Attiny26“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7401.pdf
junction temperature. ( See fig. 11 ) T SD ≤ 4.1A, di/dt ≤ 100A/µDD ≤ V(BR)DSS S Surface mounted on FR-4 board, t ≤ 10sec. TJ≤ 150°C IRF7401 1000 VGS 1000 VGS TOP 7.5V TOP 7.5V 4.0V 5.0V ) 3.5V 3.5V A 3.0V A 3.0V t 2.5V ( 2.5V n BOTTOM 1.5V n BOTTOM 1.5VV r e u 100 u 100 C C e e r r o u S S o o - - i 10 i 10 r r D D , , 1.5V I D ID 1.5V 20µs PULSE WIDTH 20µs PULSE WIDTH TA= 25°C TJ= 150°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) V DS
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BC846BDNPN.PDF
Collector−Base Voltage V 80 50 30 V CBO 1 Emitter−Base Voltage VEBO 6.0 6.0 5.0 V Collector Current − IC 100 100 100 mAdc 1x = Specific Device Code Continuous x = B, F, G, L Stresses exceeding Maximum Ratings may damage the device. Maximum M = Date Code Ratings are stress ratings only. Functional operation
in „Leckströme für NPN Transistor“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MSP430F5438IPZ.pdf
ACTIVE LQFP PZ 100 1000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) MSP430F5435IPN ACTIVE LQFP PN 80 119 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) MSP430F5435IPNR ACTIVE LQFP PN 80 1000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) MSP430F5436IPZ ACTIVE LQFP PZ 100 90 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) MSP430F5436IPZR ACTIVE LQFP PZ 100 1000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) MSP430F5437IPN
in „Strombelastbarkeit MSP430“ · Mikrocontroller und Digitale Elektronik ·
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Datei
boxverschieben__min_v_.htm
innerHTML+='<div style="position:absolute; max-width:200px; max-height:200px; padding:7px; top:300px; left:100px;" ondblclick="this.style.opacity=0;" onmousedown="startDrag(this);"><img alt="'+beschreibung+'" src="'+text+'"/><div contenteditable="true">'+beschreibung+'</div><div onclick=Drehe dieses Element"
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PDF
LTH301-05.pdf
Dissipation 75 mW IR Diode Peak Forward Current (Pulse Wide = 10S, 300 pps) 1 A Diode Power Dissipation 100 mW Phototransistor Collector-Emitter Voltage 30 V Phototransistor Emitter-Collector Voltage 5 V Operating Temperature Range -25℃ to + 85 Storage Temperature Range -40℃ to + 100 Lead Soldering Temperature
in „Relais durch Halbleiter ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tps7a4001.pdf
C = 0nF V 100mV/div BYP OUT V OUT 50mV/div CBYP= 10nF VOUT 100mV/div VIN I OUT 10mA/div 50V/div Time (1ms/div) Time (100ms/div) Figure 1. Line Transient Response vs C BYP Figure 2. Load Transient Response 10 1.275
in „Frage zur Spannungserzeugung in Verstärkerschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
top200yai.pdf
UG8BT 3.3 H 7.5 V R1 39 R2 68 VR1 C2 C3 P6KE150 680 F 120 F 25 V 25 V U2 D1 NEC2501 VR2 UF4005 1N5234B BR1 C1 6.2 V L2 400 V 33 F RTN 22 mH 400 V D3 1N4148 CIRCUIT PERFORMANCE: Line Regulation - ±0.5% C6 C5 C7 (85-265 VAC) 0.1 F 47 F T1 1 nF Load Regulation - ±1% DRAIN Y1 (10 -100%) F1 SOURCE Ripple Voltage
in „Reparatur Ladegerät DBL430-14 Überspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BAR63.pdf
otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Breakdown voltage V(BR) 50 - - V I(BR)= 5 µA Reverse current R - - 50 nA VR= 20 V Forward voltage VF - 0.95 1.2 V I = 100 mA F AC characteristics Diode capacitance C pF T VR = 0 V, f= 100 MHz - 0.3 - V = 5 V, f= 1 MHz - 0.21
in „Alternative Firmware für Sparmatic Zero Heizungsthermostat“ · Mikrocontroller und Digitale Elektronik ·
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Datei
dateierstellen.php
das ganze optisch ein wenig ansprechender wird ... */ body { background-color: lightblue; margin: 100px auto; width: 500px; text-align: center; } #eInhalt, #eName, #eTyp, #eSubmit{ border: 1px solid #ABABAB; width: 500px; height: 30px; text-align: center; } #eInhalt { height: 200px; } </style> </head
in „Webserver Zugriff auf Dateien, wie programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bc557.pdf
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V (BR)CEO V (C = –2.0 mAdc,BI = 0) BC556 –65 – – BC557 –45 – – BC558 –30 – – Collector–Base Breakdown Voltage V V (BR)CBO (C = –100 Adc) BC556 –80 – – BC557 –50 – – BC558 –30 – – Emitter–Base Breakdown Voltage V(BR)EBO V (E = –100 ▯Adc,CI = 0) BC556 –5.0 – – BC557 –5.0 – – BC558 –5.0 – – Collector–Emitter Leakage Current I CES (VCES = –40 V) BC556 – –2.0 –100 nA (VCES = –20 V) BC557 – –2.0 –100 BC558 – –2.0 –100
in „bc557 kennlinie im datenblatt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
_AM_Mittelwellen-Pruefsender.pdf
7.049f Xti=3 Eg=1.11 Vaf=59.93 Bf=375.6 Ise=56.03f 33k 4.7k 1k + Ne=1.553 Ikf=87.07mNk=.4901 Xtb=1.5 Br=2.886 Isc=7.371p + Nc=1.508 Ikr=5.426 Rc=1.175 Cjc=5.5pMjc=.3132 Vjc=.4924 Fc=.5 + Cje=11.5pMje=.6558 Vje=.5 Tr=10n Tf=417.3pItf=1.512 Xtf=39.51 + Vtf=10) C4 Q1 V1 * PHILIPS pid=bc549b case=TO92 1n BC550C
in „AM Mittelwellensender Prüfsender“ · HF, Funk und Felder ·
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PDF
RFM12BP.PDF
30 us frequency error <10 kHz With a running crystal tst, P PLL startup time oscillator 200 300 us BR Data rate With internal digital 0.6 115.2 kbps demodulator BR A Data rate With external RC filter 256 kbps Pmin Sensitivity 433MHz band -118 -116 dBm (BER 10 -, 868MHz band -114 -112 BW=134KHz,BR=1 915MHz
in „Verkaufe Hoperf - 10 rfm12b und 2 rfm12bp 868 MHz“ · Markt ·
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PDF
irlml6302.pdf
Drain-to-Source Leakage Current µA -25 VDS = -16V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage -100 VGS = -12V GSS nA Gate-to-Source Reverse Leakage 100 VGS = 12V Qg Total Gate Charge 2.4 3.6 ID= -0.61A Qgs Gate-to-Source Charge 0.56 0.84 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge 1.0 1.5 VGS
in „LCD-Hintergrundbeleuchtung dimmen (PWM)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2SA2022.pdf
=(–)125mA (–)0.85 (–)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(–)10µA, I =0 (–50) V (BR)CBO C E 60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO C =(–)1mA, BE = (–)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO E =(–)10µA,CI =0 (–)6 V Turn-ON Time t See specified Test Circuit 30 ns
in „Ersatztyp 2SA2022 / 2SC5610 oder 2S1469 / 2SC3746“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Protection_of_automotive_electronics_STM_AN2689.pdf
C) Figure 24. Peak pulse power versus exponential time duration P PP(W) 3000 Tjinitial = 25°C 1000 100 p (µs) 10 1 10 100 In the same way as for the SM6T27A, the calculations give: R d = 1 Ω, Vcl 42.5 V, pp = 12.5 A then P = 531 W pp and the t’ current pulse duration is still 457 ns. Figure 24 shows
in „Sinn der Dioden in Schaltung (Bild)“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
I2C_ADXL345_26_04_12.c
BIT6 + BIT7; P1SEL2 |= BIT6 + BIT7; UCB0CTL1 |= UCSWRST; UCB0CTL0 = UCMST + UCMODE_3 + UCSYNC; UCB0BR0 = 10; UCB0BR1 = 0; UCB0CTL1 = UCSSEL_2; UCA0CTL1 &= ~UCSWRST; //Take UCA0 out of reset } void uart_init() { P1SEL |= BIT1 + BIT2 ; P1SEL2 |= BIT1 + BIT2; UCA0CTL1 = UCSWRST; //UCA0 in Reset UCA0CTL1 |= UCSSEL_2; // SMCLK UCA0BR0 = 104; // 1MHz 9600 UCA0BR1 = 0; // 1MHz 9600 UCA0MCTL = UCBRS0; // Modulation UCBRSx = 1 } void i2c_write(uint8_t address, uint8_t* data, uint8_t len) { // Warten, bis Bus frei while (UCB0CTL1 & UCTXSTP
in „MSP430G2553, I2C read falsche Reihenfolge bei der Ausgabe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRL3713.pdf
) 6.0V ) 6.0V ( 4.5V ( 4.5V n 3.3V n 3.3V e100 2.8V e 2.8V u BOTTOM2.5V u BOTTOM2.5V C C100 c c u u o 10 o - - - - i i 2.5V r r 10 D 1 D ,D 2.5V D I I 20µs PULSE WIDTH 20µs PULSE WIDTH 0.1 TJ= 25 C 1 TJ= 175 C 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BC337-D.PDF
A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO 45 − − Vdc (I= 10 mA, I = 0) C B Collector−Emitter Breakdown Voltage V 50 − − Vdc (BR)CES (C= 100 mA, E = 0) Emitter−Base Breakdown Voltage V(BR)EBO 5.0 − − Vdc (E= 10 mA, C = 0) Collector Cutoff
in „Grundlagenproblem Transistor?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ArmAssemblerTutorial.pdf
#0xfffffff0 orr r0, #2 str r0, [r1] @ Set CNF8:MODE8 in GPIOA_CRH to 2 ldr r1, =0x40010810 ldr r0, =0x100 str r0, [r1] @ Set BS8 in GPIOA_BSRR to 1 to set PA8 high ldr r1, =0x40010810 ldr r0, =0x1000000 str r0, [r1] @ Set BR8 in GPIOA_BSRR to 1 to set PA8 low b 0x8000104 Example name: “Blink” The address
in „ARM-Assembler-Tutorial“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tlc59401.pdf
www.ti.com SBVS137 –DECEMBER 2009 Table 1. Test Parameter Equations I - I D(%) = OUTn OUTavg _0-15´100 IOUTavg _0-15 (1) IOUTavg - OUT(IDEAL) D(%) = ´100 OUT(IDEAL) (2) æ1.24V ö IOUT(IDEAL) = 31.5 ´ ç ÷ è RIREF ø (3) (IOUTn at VCC = 5.5V) (I OUTn at VCC = 3.0V) 100 D(%/ V) = ´ (OUTn at VCC = 3.0V) 2.5
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Aim_TTi_QL_Series_II_Service_Manual_48511-1740.pdf
Part No. Description Position 20073-9801 SCREW No.4x1/4in. Plastite HEATSINKS 20613-0026 SIL-PAD 900S 100MM X 25MM FOR HS1, HS2 20670-0366 HEATSINK LS01000 100MM PLAIN SK1-2 20670-0367 CLIP 1 FOR TO220/TO247 H/S FOR IC1-3,Q22,SCR1-2,BR1,Q15,Q16 22240-0150 RELAY 12V DPDT 8A RL1-2 22312-0242 FUSE CLIPS PCB
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Steuersystem_Gew_shaus_4.pdf
von Micronas Pullup am Ausgang ist notwendig. Anschlussplan 1&6 Motor Minus, schwarz (br/bl) 2&7 Motor Plus, rot (br/rt) 3 GND, blau (br/gb) 8 Signal A, gelb (br/gn) 5 +5V +24V, braun (br/ws) Tauchpumpen (mit Rückschlagventil) Hersteller Reich Spannung 12 VDC Strom 2A Volumenleistung 12
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564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD < 3 A, di/dt < 100 ADS(peak) (BR)DSS 4. V DS≤ 640 V Table 3. Thermal data Value Symbol Parameter DPAK, Unit TO-220FP TO-220 IPAK Rthj-caseThermal resistance junction-case max 2.08 6.25 2.08 °C/W R thj-ambThermal resistance
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STP15N80K5.pdf
temperature 1. Limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 14 A, di/dt ≤ 100 A/µsPeak≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 TO-247 D PAK TO-220FP Thermal resistance junction-case Rthj-case 0.66 3.6 max °C/W Rthj-amb Thermal resistance junction-amb
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2SA1216.pdf
CHARACTERISTICS T C25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; B = 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; B = -0.8A -2.0 V ICBO Collector Cutoff Current V CB-180V; I E 0 -100 μA IEBO Emitter
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