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DS_OPA657_2008-12.pdf
OPA657 OP6 7 www.ti.com SBOS197E – DECEMBER 2001 – REVISED DECEMBER 2008 1.6GHz, Low-Noise, FET-Input OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● HIGH GAIN BANDWIDTH PRODUCT: 1.6GHz The OPA657 combines a high gain bandwidth, low distortion, ● HIGH BANDWIDTH 275MHz (G = +10) voltage-feedback op amp with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high ● LOW INPUT OFFSET VOLTAGE: ± 0.25mV precisionADC(Analog-to-DigitalConverter)drivingorwideband ● LOW INPUT BIAS CURRENT: 2pA transimpedance applications. Photodiode applications will see ● LOW INPUT VOLTAGE
in „Stabilität OPV OPA657“ · Analoge Elektronik und Schaltungstechnik ·
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Micrel.pdf
Short-Circuit vs. Temperature. Current vs. Temperature. FIGURE 2-9: MIC2915x Ground Current FIGURE 2-12: MIC2915x Ground Current vs. Input Voltage. vs. Temperature. DS20005685B-page 10 2016-2019 Microchip Technology Inc. MIC2915X/30X/50X/75X FIGURE 2-13: MIC29151-xx/2 Enable FIGURE 2-16: MIC29152/3 Adjust
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Littelfuse_Discrete_MOSFETs_N-Channel_Standard_IXT_1N450HV_Datasheet.PDF.pdf
Typ. Max. Easy to Mount J Space Savings V V = V , I = 250A 3.5 6.0 V High Power Density GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS IDSS VDS = 3.6kV, VGS 0V 5 A Applications V DS= 4.5kV 25 μA V = 3.6kV T = 100C 15 μA DS J High Voltage Power Supplies R V = 10V, I =
in „SOA Diagramm richtig anwenden“ · Analoge Elektronik und Schaltungstechnik ·
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irl630.pdf
On-Resistance GS D ––– ––– 0.50 V GS= 4.0V, D = 4.5A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS ,DI = 250µA gfs Forward Transconductance 4.8 ––– ––– S V DS= 50V, D = 5.4A DSS Drain-to-Source Leakage Current ––– ––– 25 µA V DS= 200V, VGS = 0V ––– ––– 250 V DS= 160V, VGS = 0V, J = 125°C GSS
in „Kontrolle der Kühlkörperberechnung“ · Mikrocontroller und Digitale Elektronik ·
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PIC18F46J11_39932D.pdf
Output Function is Assigned to RP11 Output Pin bits (see Table 10-14 for peripheral function numbers) DS39932D-page 164 2011 Microchip Technology Inc. PIC18F46J11 FAMILY REGISTER 10-33: RPOR12: PERIPHERAL PIN SELECT OUTPUT REGISTER 12 (BANKED ED2h) U-0 U-0 U-0 R/W-0 R/W-0 R/W-0 R/W-0 R/W-0 — — — RP12R4
in „PIC18F46J11 und RTC. Quarz nötig? Anfängerfrage Übersicht verloren ;-(“ · Mikrocontroller und Digitale Elektronik ·
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PIC18Fxx2.pdf
PSPIF, PSPIE and PSPIP bits are reserved on the PIC18F2X2 devices; always maintain these bits clear. DS39564B-page 110 2002 Microchip Technology Inc. PIC18FXX2 12.0 TIMER2 MODULE 12.1 Timer2 Operation The Timer2 module timer has the following features: Timer2 can be used as the PWM time-base for the
in „AD1 und AD2 Multiplexen (PIC18F452)“ · Mikrocontroller und Digitale Elektronik ·
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Display_-_NL10276BC30-04D.pdf
type: Four cold cathode fluorescent lamps in two holders, Inverter-less Lamp holder: Part no. 150LHS12 Recommended inverter Part no. 150PW081 Power consumption 17 W (typ., Checker flag pattern, at I = 6 mA rms/lamp) 2 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D BLOCK DIAGRAM I/F LCD module A 4 F ) D0+/
in „VIA Nano Board LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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Display_-_NL10276BC30-04D.pdf
type: Four cold cathode fluorescent lamps in two holders, Inverter-less Lamp holder: Part no. 150LHS12 Recommended inverter Part no. 150PW081 Power consumption 17 W (typ., Checker flag pattern, at I = 6 mA rms/lamp) 2 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D BLOCK DIAGRAM I/F LCD module A 4 F ) D0+/
in „günstiges ITX Mainboard mit LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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IXFH13N50.PDF
Switched-modeandresonant-mode V DSS VGS = 0 V, D = 250 mA 500 V V V = V , I = 2.5 mA 2 4 V powersupplies GS(th) DS GS D ● DC choppers ● Temperatureandlightingcontrols IGSS VGS = ±20 VDC V DS= 0 ±100 nA ● Low voltage relays IDSS VDS = 0.8 • DSS T J 25°C 200 mA V = 0 V T = 125°C 1 mA Advantages GS J ● Easy to mount
in „Betriebsstrom des MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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IXFH13N50.PDF
Switched-modeandresonant-mode V DSS VGS = 0 V, D = 250 mA 500 V V V = V , I = 2.5 mA 2 4 V powersupplies GS(th) DS GS D ● DC choppers ● Temperatureandlightingcontrols IGSS VGS = ±20 VDC V DS= 0 ±100 nA ● Low voltage relays IDSS VDS = 0.8 • DSS T J 25°C 200 mA V = 0 V T = 125°C 1 mA Advantages GS J ● Easy to mount
in „Wie heiß wird mein MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IXFH13N50.PDF
Switched-modeandresonant-mode V DSS VGS = 0 V, D = 250 mA 500 V V V = V , I = 2.5 mA 2 4 V powersupplies GS(th) DS GS D ● DC choppers ● Temperatureandlightingcontrols IGSS VGS = ±20 VDC V DS= 0 ±100 nA ● Low voltage relays IDSS VDS = 0.8 • DSS T J 25°C 200 mA V = 0 V T = 125°C 1 mA Advantages GS J ● Easy to mount
in „Puls weiten modulation“ · Analoge Elektronik und Schaltungstechnik ·
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BUK100-50GL_1.pdf
voltage V IS0 V; I DM = 1 A; p ≤ 300 s; - - 70 V δ ≤ 0.01 IDSS Zero input voltage drain current V DS= 12 V; V IS0 V - 0.5 10 A IDSS Zero input voltage drain current V DS= 50 V; V IS0 V - 1 20 A I Zero input voltage drain current V = 40 V; V = 0 V; T = 125 ˚C - 10 100 A DSS DS IS j R DS(ON) Drain-source
in „Beleuchtung mit 8515 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PIC16F8X_JP.pdf
ϏοτΛΫϦΞ͢Δͱબ͞Ε·͢ (STATUS<5>)ɻ RP0 ϏοτΛηοτ͢ΔͱɺBank 1 ͕બ͞Ε·͢ɻ ֤όϯΫ࠷େ 7Fh (128 όΠτ ) ·Ͱ֦ுͰ͖·͢ɻ ֤όϯΫͷ࠷ॳͷ 12 ݸͷϩέʔγϣϯɺಛघػೳ ϨδελͷͨΊʹ༧͞Ε͍ͯ·͢ɻΓελ ςΟοΫ RAM ͷ൚༻Ϩδελ༻Ͱ͢ɻ DS30430C-J2-page 12 1998 Microchip Technology Inc. ͜ͷຊޠσʔλïįĻĻķ:ööľľľõĴİĪĹĶĪįİķõĪĶĴ ͔ΒೖखͰ͖·͢ ð PIC16F8X ਤçûôøā ϨδελϑΝΠϧஔਤçôç ਤçûôùā ϨδελϑΝΠϧ
in „Denglisch sprechender Kollege“ · Ausbildung, Studium & Beruf ·
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564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
characteristics Figure 9. Transfer characteristics AM15989v1 AM15990v1 ID(A) D (A) VGS=10, 11V 5 5 DS=20V 9V 4 4 3 3 8V 2 2 7V 1 1 6V 0 0 0 4 8 12 16 VDS(V) 5 6 7 8 9 10 VG(V) Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance *,3'▯▯▯▯▯▯▯▯▯▯▯▯59 V GS AM15991v1 5'6▯RQ▯ (V) VDS (V) ▯ȍ▯ V DS VDD=640V 12 I=3A 600 9*6 ▯▯9 ▯▯▯ 10 500 8 400 ▯▯▯ 6 300 ▯▯▯ 4 200 ▯▯▯ 2 100 0 0 ▯▯▯ 0 2 4 6 8 10 Qg(nC) ▯ ▯ ▯ ▯ ▯ ▯ ,'▯$▯ Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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EUA2005.pdf
1.0 VDD3.6V u u t O u 1.0 - VDD2.5V - PO O 0.5 P RL = 8 ohm, 10% THD 0.5 RL= 8 ohm, 1% THD 0.0 0.0 8 12 16 20 24 28 32 2.5 3.0 3.5 4.0 4.5 5.0 RL - Load Resistance - ohm V - Supply Voltage -V CC Figure8. Figure9. Figure10. Figure11. Figure12. Figure13. DS2005 Ver 1.1 Nov. 2006 7 EUA2005 TOTAL HARMONIC
in „"Brainstorming" Verstärker für hochohmige Kopfhöhrer“ · Analoge Elektronik und Schaltungstechnik ·
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3003E.pdf
LR1 1 00/2W +8V L 2 ADJ OUT COM LD1 C1 1 K2A K1A 4 ARC OUT 2 ARC OUT 1 1 LD2 120 4 70 u/35CON2 3 2 12V D6 12V D5 2 3 1 BQ20 1N4148 1N4148 1 ARC OUT 1 ARC OUT 2 4 COM ADJ OUT Q2 Q1 K1 103/2KV CN2 CN4 R24 R23 CON4 CON4 LR2 2A 30k 30k N 120 C940 C940 Adjustboard FUSE2 -5V -5V IC1 R10 R9 C +8V 7805 +5V VREF
in „Suche Schaltplan Netzgerät QJ3003E“ · Analoge Elektronik und Schaltungstechnik ·
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QJ3003E_S_netzteil.pdf
LR1 1 00/2W +8V L 2 ADJ OUT COM LD1 C1 1 K2A K1A 4 ARC OUT 2 ARC OUT 1 1 LD2 120 4 70 u/35CON2 3 2 12V D6 12V D5 2 3 1 BQ20 1N4148 1N4148 1 ARC OUT 1 ARC OUT 2 4 COM ADJ OUT Q2 Q1 K1 103/2KV CN2 CN4 R24 R23 CON4 CON4 LR2 2A 30k 30k N 120 C940 C940 Adjustboard FUSE2 -5V -5V IC1 R10 R9 C +8V 7805 +5V VREF
in „QJE 3005E III Schaltbild“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
); lcd_puts("Einstellungen:"); cli(); } } void disptemp(int sensor) { // Routine für 2x40 LCD if ( DS18X20_start_meas( DS18X20_POWER_PARASITE, &gSensorIDs[sensor-1][0] ) == DS18X20_OK ) { delay_ms(DS18B20_TCONV_12BIT); if ( DS18X20_read_meas( &gSensorIDs[sensor-1][0], &subzero, &cel, &cel_frac_bits)
in „Interrupts machen mich irre... HILFEEEE!!! :-)“ · Mikrocontroller und Digitale Elektronik ·
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ISL6545-Renesas.pdf
soft-start ramp might be over well before 12V is reached. So with lower gate drive voltages, the time-outs, plus whatever fraction of the real soft-start time passes before the detection and shutoff; at that point, the rDS(ON) of the MOSFETs will
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
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4620.pdf
0.16 103 1201 -0.16 51 2.4 2.404 0.16 103 2403 -0.16 51 2403 -0.16 25 9.6 9.615 0.16 25 9615 -0.16 12 — — — 19.2 19.231 0.16 12 — — — — — — 57.6 62.500 8.51 3 — — — — — — 115.2 125.000 8.51 1 — — — — — — 2004 Microchip Technology Inc. Preliminary DS39626B-page 207 PIC18F2525/2620/4525/4620 TABLE 18
in „SPI master/slave - schreib/lese befehle ?“ · Mikrocontroller und Digitale Elektronik ·
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FDC6327C.pdf
are • N-Channel 2.7A, 20V. R = 0.08Ω @ V = 4.5V produced using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored RDS(on)= 0.12Ω @ V GS = 2.5V to minimize on-state resistance and yet maintain low gat• P-Channel -1.6A, -20V.DS(on) 0.17Ω @ V GS = -4.5V charge
in „Port-Stromverstärkung,Push-Pull-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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Auswahl_Oszilloskop.pdf
Sampling Display Pixel Speichertiefe Rate 1. Kanal 239,00 50 2 1 GSa/s 5,7“ 320 x 234 1 MPts Rigol DS1052E Rigol DS1102E 387,94 100 2 1 GSa/s 5,7“ 320 x 234 1 MPts Rigol DS1052D 570,00 50 2 1 GSa/s 5,7“ 320 x 234 1 MPts 744,94 100 2 1 GSa/s 5,7“ 320 x 234 1 MPts Rigol DS1102D Tektronix TDS2001C 829,43
in „Agilent DSOX2002A vs Rigol DS2072“ · Mikrocontroller und Digitale Elektronik ·
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KS0073.pdf
: cursor shift, R/L = "1" : shift to right, R/L = "0" : shift to left. Shift Enable 1 0 0 0 0 0 1 DS4 DS3 DS2 DS1 (when DH = "1") 39μs Determine the line for display shift . DS1 = "1/0": 1st line display shift enable/disable DS2 = "1/0": 2nd line display shift enable/disable DS3 = "1/0": 3rd line display
in „Eigene Zeichen bei LCD mit KS0073 für blöde“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960_O2MICRO.pdf
OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description CTIMR 1 I Capacitor for CCFL ignition duration OVP
in „Ic´s (unbekannt) für den Tft monitor gesucht“ · Mikrocontroller und Digitale Elektronik ·
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OZ960.pdf
OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description CTIMR 1 I Capacitor for CCFL ignition duration OVP
in „BenQ FP71Bildschirm fällt nach einiger Zeit aus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960.pdf
OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description CTIMR 1 I Capacitor for CCFL ignition duration OVP
in „Monitor defekt!“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Kuehlschrankplatine_12.bas.txt
Tim0_isr 'Wenn Timer überläuft, löse den Interrupt "Tim0_isr" aus Enable Timer0 Enable Interrupts Dim Ds18b20_scratchpad_k(9) As Byte 'Kühlschrankfühler Dim Ds18b20_scratchpad_p(9) As Byte 'Platinenfühler Dim Ds18b20_scratchpad_a(9) As Byte 'Außenfühler Dim Kuehlschrank_integer_temp As Integer At Ds18b20
in „unzuverlässiger Temperaturregler“ · Mikrocontroller und Digitale Elektronik ·
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Ausschaltverhalten_0_47Ohm.pdf
500 D (5A) i (7,5A) D 400 D (10A) D (12,5A) A 300 / D (15A) 1 D (17,5A) · 200 i (20A) i D V 100 uDS(5A) / uDS(7,5A) S D 0 uDS(10A) u uDS(12,5A) u (15A) −100 DS uDS(17,5A) −200 uDS(20A) −20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50 55 60 t /
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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XC9500XL.pdf
in any order. This makes the XC9500XL devices immune to power supply pinout. sequencing problems. 12 www.xilinx.com DS054 (v1.8) August 2, 2004 1-800-255-7778 Preliminary Product Specification R XC9500XL High-Performance CPLD Family Data Sheet The XC9500XL architecture provides for superior pin-lock
in „Oszilloskop mit AVR“ · Mikrocontroller und Digitale Elektronik ·
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MCP_2210.pdf
chipKIT, devices in life support and/or safety applications is entirely at chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, the buyer’s risk, and the buyer agrees to defend, indemnify and dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, hold harmless Microchip from any and all damages, claims, FanSense, HI-TIDE
in „USB - SPI Adapter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Si9435BDY.PDF
Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET V DS (V) rDS(on) (W) D (A) 0.042 @ VGS = −10 V −5.7 −30 0.055 @ VGS= −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 S SO-8 S D 1 8 G S D 2 7 S D 3 6 G 4 5 D Top View D Ordering Information: Si9435BDY Si9435BDY-T1 (with
in „AVR Ausgang an FET, galvanisch getrennt, so ok?“ · Analoge Elektronik und Schaltungstechnik ·
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mXrruyr.pdf
– b 0.35 0.4 0.5 c 0.13 0.15 0.2 e D 14.8 15.0 15.2 E 8.2 8.4 8.6 2 e – 0.8 – H E 11.63 11.93 12.23 L 0.3 0.5 0.7 2 L1 – 1.765 – y – – 0.15 0° – 10° b2 – 0.5 – e1 – 11.43 – 2 1.27 – – Copyright Semtech 2000-2001 8 www.semtech.com DOC7-TS2-U860-DS-101 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings
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___MPASM_USER_S_GUIDE_with_MPLINK_and_MPLIB.pdf
development products. Refer to Appendix B for access information. 1997 Microchip Technology Inc. DS33014F - page 11 MPASM USER’S GUIDE with MPLINK and MPLIB Notes: DS33014F - page 12 1997 Microchip Technology Inc. MPASM USER’S GUIDE with MPLINK and MPLIB P r t Chapter 2. Environment and Usage 1 –
in „Anfängerfrage zu Assembler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS Drain-Source On-state V GS4.5V , IDS-3A 80 100 RDS(ON) mΩ Resistance V GS-2.5V , DS=-2A 110 135 V SD Diode Forward Voltage ISD-1.25A , VGS0V -0.7 -1.3 V b Dynamic Q Total Gate Charge V =-10V , I =-1A g DS DS 6.4 8 Qgs Gate-Source Charge V GS=-4.5V 1 nC Qgd Gate-Drain Charge 1.8 t Turn-on
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Einschaltverhalten_0Ohm.pdf
500 D (5A) i (7,5A) 400 D D (10A) 300 D (12,5A) A / D (15A) 1 200 D (17,5A) · i (20A) i 100 D V uDS(5A) / 0 uDS(7,5A) S D uDS(10A) u−100 uDS(12,5A) u (15A) −200 DS uDS(17,5A) −300 uDS(20A) −20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50 55 60 t /
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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A300_25AA640A_25LC640A-MIC.pdf
10 11 21 22 23 24 25 26 27 28 29 30 31 SCK Instruction 16-bit Address SI 0 0 0 0 0 0 1 1 15 14 13 12 2 1 0 High-Impedance Data Out 7 6 5 4 3 2 1 0 SO © 2008 Microchip Technology Inc. DS21830D-page 7 25AA640A/25LC640A FIGURE 2-2: BYTE WRITE SEQUENCE CS Twc 0 1 2 3 4 5 6 7 8 9 10 11 21 22 23 24 25 26
in „SPI funktioniert nicht“ · Mikrocontroller und Digitale Elektronik ·
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PICkit_3_Programmer_Application_User_s_Guide_50002158a.pdf
for more information on using the push button with the logic tool. 2013 Microchip Technology Inc. DS50002158A-page 11 PICkit™ 3 Programmer Application User’s Guide NOTES: DS50002158A-page 12 2013 Microchip Technology Inc. PICkit™ 3 PROGRAMMER APPLICATION USER’S GUIDE Chapter 2. Getting Started 2.1
in „PICkit3 und Windows 11“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FQB34P10.pdf
Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 6500 12 Ciss gs gd dshorted) 6000 Coss ds gd 5500 Crss gd VDS-20V C ]10 V DS50V 5000 oss [ 4500 C e VDS-80V F iss t 8 [4000 ※ Notes: o s 1.GS=0V V c3500 2.f=1MHz c t3000 u 6 c C o p2500 rss - a2000 a 4 C G 1500
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
MINI68.TXT
: DS 1; !CHECKINST VECTOR7: DS 1; !TRAPOVERFL VECTOR8: DS 1; !PRIVILEGE; VECTOR9: DS 1; !TRACEVEC FUER TRACE-INSTR. VECTOR10: DS 1; !LINE1010 EMULATOR VECTOR11: DS 1; !LINE1111 EMULATOR VECTOR12: DS 1; !TRAPERR
in „[S] MPU (Z80/6502/68k)“ · Markt ·
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PDF
gdm12864a.pdf
SEG128 C64 C1 R CR C M FRM CLK1 CLK2 K CL2 S VDD 0 SHL 1 0 S1 S64 FS 7 M MS B FRM PCLK2 KS0108B CLK1 DS2 CLK2 DS1 (Bottom view) CL2 VSS R V S B C C V V V V V V E S E : R R 1 2 S E V V V V V V V A 0 1 2 3 4 5 E 3 B ] S W E B B S E 5 4 3 2 1 0 D C VSS VDD 12 V0 V1 E U VSS V2 P RW M RS V3 DB[0:7] RESETB V4
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PDF
IPP120P04.pdf
-03, IPP120P04P4L-03 5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID= f(V DS); Tj= 25 °C; SMD R DS(on)= (D ); Tj= 25 °C; SMD parameter: V GS parameter: V GS 640 20 -10 V -2.8 V -3 V -3.5 V -5 V 560 18 16 480 -4.5 V 14 400 W ] m 12 [ [) D320 ( - -4 V D 10 R 240 8 160 -3.5 V 6 -4 V 80 -3 V 4 -4.5 V -5 V -10V 0 2 0 1 2 3 4 5 6 0 40 80 120 -V [V] DS -D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I = f(V ); V = -6V R = f(T ); I = -100 A; V = -10 V; SMD D GS DS DS(on) j D GS parameter: T j 640 4.5 25 °C 560 -55 °C 175
in „Highside, FET wird heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ssd1803_2_0.pdf
are only activated in internal divider option (when DH = "1") Determine the line for display shift. DS1 = "1/0": 1st line display Shift shift enable/disable 39us 1 0 0 0 0 0 1 DS4 DS3 DS2 DS1 DS2 = "1/0": 2nd line display enable shift enable/disable DS3 = "1/0": 3rd line display shift enable/disable DS4
in „DIP203 LCD mit TMS320F28335 per SPI“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Plotclock_v1_2.ino
instructions on how to hook up a real time clock, // see here -> http://www.pjrc.com/teensy/td_libs_DS1307RTC.html // DS1307RTC works with the DS1307, DS1337 and DS3231 real time clock chips. // Please run the SetTime example to initialize the time on new RTC chips and begin running. #include <Wire.h>
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET-FCPF20N60.pdf
operation for system min- iaturization and higher efficiency. l M O S D F { E T z ▯ ▯ G { z G D TO-220 G DS TO-220F { S S Absolute Maximum Ratings Symbol Parameter FCP20N60 FCPF20N60 Unit V Drain-Source Voltage 600 V DSS D Drain Current - Continuous CT = 25°C) 20 20* A - Continuous CT 100°C) 12.5 12.5* A (
in „Berechnen Irr von MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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STEVAL-3DP001V1_Data.pdf
C V D D G C M c 1 2 3 4 56 7 8 9 0 e 1 n V n _ o D N c V 6 0 e V C 1 n _ o 4 F D l R 0 6 0 V 1TAD_DS n C 1 0TAD_DS O KLC_DS 3TAD_DS 2TAD_DS D D DC_DS _ _ T T R O O O T R R C 1 1 1 1 1 1 1 9 r 0 0 E t N C C EE E E E E c 5 6 N V V 23 D K 0 1 e R R O A AA M C A A n C A DD C D D o 6 5 4 D c 6 S 4 D R 1
in „3D-Drucker Board bzw CNC-Board mit STM32F401“ · Mechanik, Gehäuse, Werkzeug ·
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IRF540-VIS.PDF
Impedance, Junction-to-Case L VDS VDS Vary p to obtain tp requiredAS V DD R D.U.T G + -V DD V IAS DS 10 V t 0.01 Ω p I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: 91021 www.vishay.com S-81240-Rev. A, 16-Jun-08 5 IRF540, SiHF540 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 kΩ 10 V 12 V 0.2 µF 0.3 µF QGS Q GD + VDS D.U.T. - V G VGS 3 mA Charge IG ID Current sampling resistors Fig.
in „MOSFET für eine Stromgesteuerte Stromquelle“ · Analoge Elektronik und Schaltungstechnik ·
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KM416C1204C.pdf
SS DQ0 2 41 DQ15 DQ0 2 43 DQ15 DQ1 3 40 DQ14 DQ1 3 42 DQ14 DQ2 4 39 DQ13 DQ2 4 41 DQ13 DQ3 5 38 DQ12 DQ3 5 40 DQ12 VCC 6 39 V SS VCC 6 37 VSS DQ4 7 38 DQ11 DQ4 7 36 DQ11 DQ5 8 37 DQ10 DQ5 8 35 DQ10 DQ6 9 36 DQ9 DQ6 9 34 DQ9 DQ7 10 35 DQ8 DQ7 10 33 DQ8 N.C N.C 11 34 N.C 11 32 N.C N.C 12 31 LCAS N.C 12
in „Suche DRAM Chips“ · Mikrocontroller und Digitale Elektronik ·
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MOSFET.pdf
Normalized On-Resistance vs. Temperature 35000 V = 0V, f = 100 kHz 16 GS ID= 180A C iss= Cgs+ Cgd C dsSHORTED V V = 80V 30000 C rss= Cgd ( DS C = C + C g V DS = 50V ) oss ds gd l 12 V = 20V F 25000 o DS ( Ciss e c r n 20000 o i - 8 a t a 15000 e C a C G 10000 ,S 4 Coss G V 5000 Crss 0 0 0 50 100 150 200
in „LeistungsMosfet Kühlfläche als Drain-Anschluss nutzen“ · Analoge Elektronik und Schaltungstechnik ·
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Infineon-IPD025N06N-DS-v02_05-EN.pdf
R typ 2.0 1.5 1 1.0 0.5 0.0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj[°C] T j°C] R DS(on)f(Tj; D =90 A; VGS10 V VGS(th)(T)j V GS DS Diagram 11: Typ. capacitances Diagram 12: Forward characteristics of reverse diode 104 103 25 °C 175 °C Ciss 3 2 10 Coss 10 F ] p [ F C I 102 101 Crss 101 100 0 20 40 60 0.0 0.5 1.0 1.5 2.0 V DSV] V SDV] C=f(V DS V =GSV; f=1 MHz F =f(SD); parameter: T j Final Data Sheet 9 Rev. 2.5, 2014-07-23 OptiMOS Power-Transistor, 60 V IPD025N06N Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge 2 10 12 30
in „N-Channel Mosfet gesucht - IPD025N06N“ · Analoge Elektronik und Schaltungstechnik ·
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LM1086.pdf
-43 DS100948-44 Ripple Rejection vs. Frequency (LM1086-5) Ripple Rejection vs. Output Current (LM1086-5) DS100948-46 DS100948-45 Line Transient Response Load Transient Response DS100948-47 DS100948-48 7 www.national.com
in „Spannungsregler“ · Analoge Elektronik und Schaltungstechnik ·