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PIC12FLF1822PIC16FLF1823.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „PIC16lf1823 General purpose I/Os mit Schmitt Trigger ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1703_MIC.pdf
Loggers 3-Pin SOT-89 SOT-223-3 Related Literature VIN • AN765, “Using Microchip’s Micropower LDOs”, DS00765, Microchip Technology Inc., 2002 • AN766, “Pin-Compatible CMOS Upgrades to BiPolar LDOs”, DS00766, 1 2 3 1 2 3 Microchip Technology Inc., 2002 GND VINVOUT V IN GND V OUT • AN792, “A Method to Determine
in „Was ist das für ein IC“ · Mikrocontroller und Digitale Elektronik ·
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en.CD00002654.pdf
conditions Min. Typ. Max. Unit V Drain-source I = 1 mA, V = 0 100 V (BR)DSS Breakdown voltage D GS V DS= max rating 50 µA DSS Zero gate voltage V = max rating, Drain currentGSV= 0) T C=125°C 500 µA s ) GSS Gate-body leakage V GS= ± 20 V ±400 nA current DS = 0) u c VGS(th) Gate threshold voltage V DS= VGS, D = 250 µA 2 d3 4 V R Static drain-source on V = 10 V, I = 125 A r o 0.0045 0.0055 Ω DS(on) resistance GS D P te Table 6. Dynamic le o Symbol Parameter Tess conditions Min. Typ. Max. Unit gfs Forward transconductance VDS = 20 , D =70 A - 60 - S Ciss Input capacitance - O 31 nF ) Coss Output
in „STE250NS10 Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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AND9093-D.PDF
When EN is HIGH, Q1 turns on, the pass transistor gate is pulled to ground, and the MOSFET has an R DS(on) advantage over the P-channel MOSFET for a given die size. The R DS(on)of an N-channel load switch turns off. Resistor R1 is selected so that device can be two times lower than the R DS(on) of milliamps
in „Widerstandsdimensionierung im Betrieb als Schalter für RC Elektronik mit IRLIZ44N“ · Analoge Elektronik und Schaltungstechnik ·
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74f595.pdf
Change H L X ⇓ X L0 L Q0–Q7 Z L Clear shift register, hold latch L L X ⇓ X L0 L Q0–Q7 Q0–Q7 L H H ⇓ ⇓ ds Ds o0–o6 Q0–Q7 Z o6 Shift L H ⇓ ⇓ ds Ds o0–o6 Q0–Q7 Q0–Q7 o6 H H ⇓ ⇓ X O0 O1–O7 o0–o7 Z Q7 Store L H ⇓ ⇓ X O0 O1–O7 o0–o7 o0–o7 Q7 H H ⇓ ⇓ ds Ds o0–o6 o0–o7* Z o6 Store, then Shift L H ⇓ ⇓ ds Ds o0–o6
in „Schnelleres IC als STPIC6C595“ · Mikrocontroller und Digitale Elektronik ·
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IRLZ44NPBF-HXY.pdf
Drain-Source Breakdown Voltage (Note 1) BVDSS VGS0 V D=250μ A 60 - - V Zero Gate Voltage Drain Current DSS V DS0V,V =0GS 60 68 - nA Gate-Bod y Leakage Current GSS VGS=± 20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDSV ,GS D50μ A 2.0 - 4.0 V Drain-Source On-State Resistance R DS(ON) V GS0V, ID=25A - 17 20 mΩ Forward Transconductance gFS V DS0V,I =D0A 15 - - S Input Capacitance C - 4050 - PF lss V =25V,V =0 V, Output Capacitance C DS GS - 430 - PF oss F=1.0MHz Reverse Transfer Capacitance Crss - 110 - PF Turn-on Delay Time d(on) - 60 - nS
in „LED-Streifen fiepen bei PWM <=100%“ · Analoge Elektronik und Schaltungstechnik ·
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3454fa.pdf
700 T 1.8 H VIH T 600 VIL O V FALLING E 600 V E V 1.7 IN B 500 IL B 500 U N N 1.6 E 400 E 400 1.5 300 300 1.–55 –35 –15 5 45 85 105 125 200 200 25 65 –55 –35 –15 5 25 45 65 85 105 125 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 TEMPERATURE (°C) TEMPERATURE (°C) VIN(V) 3454 G01 3454 G02 3454 G03 I Servo Voltage
in „Gibt es Buck-Converter, die einen regelbaren Konstantstrom liefern?“ · Analoge Elektronik und Schaltungstechnik ·
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DS8816A-05.pdf
currentlimit,andthermalshutdowninto the WQFN-20L 3x3 package. Dynamic Phase Number Control LosslessR DS(ON)CurrentSensingforCurrentBalance The RT8816A adopts R DS(ON)urrent sensing technique. Currentlimitisaccomplishedthroughcontinuousinductor- Internal/External Soft-Start Adjustable Current Limit
in „Spule auf Synchronwandler wird innerhalb sekunden brennend heiß“ · Analoge Elektronik und Schaltungstechnik ·
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LT1014.pdf
OUTPUT A S500 TESTED FROM 12 3 + 10mV/°C N THREE RUNS 14 + 11 O400 J PACKAGE LT1014 260Ω 1.8k E –13 M300 1M N 200 4k 6 – 100 USE TYPE K THERMOCOUPLES. ALL RESISTORS = 1% FILM. 7 OUTPUT B COLD JUNCTION COMPENSATION ACCURATE 5 +LT1014 10mV/°C 0 USE 4TH AMPLIFIER FOR OUTPUT C. –300 –200 –100 0 100 200 300
in „Unterschied beim LT1014 ?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
serieltest1.c
#include "i2cmaster.h" #include <util/delay.h> /* 9600 baud */ #define UART_BAUD_RATE 9600 #define DS1307 0xD0 //Adresse des DS1307 #define PCF_Write 0x70 //Adresse für PCF Porterweiterung schreiben #define PCF_Read 0x71 //Adresse für PCF Porterweiterung lesen unsigned char time_s; unsigned char time_m
in „PCF8574 Ausgänge“ · Mikrocontroller und Digitale Elektronik ·
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MCP1700.pdf
2029C 2005-2016 Microchip Technology Inc. DS20001826D-page 21 MCP1700 /HDG 3ODVWLF 7UDQVLVWRU 2XWOLQH 72 >72 @ 1RWH E A 1 N L 1 2 3 b e c D R 1RWHV DS20001826D-page 22 2005-2016 Microchip Technology Inc. MCP1700 2005-2016 Microchip Technology Inc. DS20001826D-page 23 MCP1700 DS20001826D-page 24 2005-2016 Microchip Technology Inc. MCP1700 NOTES: 2005-2016 Microchip Technology Inc. DS20001826D-page 25 MCP1700 APPENDIX A: REVISION HISTORY Revision
in „ESP-01 mit LiPo betreiben“ · Mikrocontroller und Digitale Elektronik ·
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HYCON-Tech-HY2213-BB3A_C113632.pdf
HY2213 Datasheet 1 Cell Li-ion/Polymer Battery Charge Balance IC . www.hycontek.comON Technology Corp. DS-HY2213-V05_EN HY2213 1 Cell Li Battery Charge Balance IC Table of Contents 1. GENERAL DESCRIPTION .....................................................................................................
in „LiFePo Balancer: CF-4S30A-A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLU2905.pdf
175°C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 60 ) Α TJ= 25°C ( 50 T J 175°C ( e n n r t u100.0 T J 175°C u 40 C n r c u s 30 TJ= 25°C S r t T n 10.0 r a a 20
in „Batterieschutzschaltung. Murks oder möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Hilfe bei Bauteilidentifizierung erbeten (MOSFET, SOT23)“ · Offtopic ·
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IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PMBFJ620_1.pdf
reference data Symbol Parameter Conditions Min Typ Max Unit Per FET V drain-source voltage - - ±25 V DS VGSoff gate-source cut-off VDS = 10 V;DI = 1 A −2 - −6.5 V voltage DSS drain current VGS = 0 V; DS = 10 V 24 - 60 mA Ptot total power Ts≤ 90 °C - - 190 mW dissipation y forward transfer V = 10 V;
in „Doppelfet für Vorstufe“ · Analoge Elektronik und Schaltungstechnik ·
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3703fc.pdf
RBG(SINK) BG Driver Pull-Down DS(ON) (Note 8) 1 1.5 Ω ITG(PEAK) TG Driver Peak Source Current 1.5 2 A RTG(SINK) TG Driver Pull-Down DS(ON) (Note 8) 1 1.5 Ω Feedback Amplifier A Op Amp DC Open Loop Gain (Note 4) 74 85 dB VOL fU Op Amp
in „Längs- oder Querregler 40V 250W als Überspannungsschutz für Tiefstellsetzer“ · Analoge Elektronik und Schaltungstechnik ·
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Chess-Schematic.PDF
LED3 RL3 PILED200 PR21D20150 5V 5V PICab1e202 PICable25V SIPO_SRCK 5V PIS15O10VCC DRAIN2 PI6IPO1ILED300 PIR31300150 5V LED4 RL4 5V PICab3e204 PICable25V PISI7O10SRCK DRAIN3 PI14PO106 LED5 RL5 PILED400 PR41D40150 5V 3.3V PICab5e206 PICable23.3V 5V PISIPO10CLR DRAIN7 PISIPO1ILED500 PIR51500R52 5V COED CRL
in „Spannungsabfall bei Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datenblatt.pdf
Voltage VGS(TH) V GS = VDS DI = 250µA (Figure 10) 2 - 4 V o Zero Gate Voltage Drain Current IDSS V DS = 60V, TC= 25 C - - 1 µA V GS = 0V o TC= 150 C - - 50 µA Gate to Source Leakage Current I V = ±20V - - ±100 nA GSS GS Drain to Source On Resistance r I = 50A, V = 10V (Figures 9) - - 0.022 Ω DS(ON) D
in „Motorensteuerung Raspberry PI“ · Mikrocontroller und Digitale Elektronik ·
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YX8183H.pdf
电池电压范围 VBAT - 2.7 4.2 V 输入电流范围 I - 0 300 mA BAT 光控关断状态电流 SD V BAT3.7V，V SOL=1.0V 14 μA 过放保护 VGFP 3.7V锂离子电池 2.7 V 过放释放 VGFR 3.7V锂离子电池 3.3 V 过充保护电压 VGFP 4.1 4.2 4.3 V R 0.5 Ω 开关导通电阻 DS(ON) V BAT3.7V，Rs=1.0Ω 空载电流 dd VBAT=3.7V 38 μA 亮灯时光控电压 0.5
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datasheet.pdf
systems to be economically constructed based on ‘in-service proven’ technology. Dimensions mm 5.0 1.6 300 typical ∅ 5.0 optional + 0 rear shaft ∅ Ds -0.013 23HS X series +0.05 ∅ 38.1 19 47.2 dimension L 20.6 57.2 Mechanical Specification: 1.8 degree high performance stepper motors motor type length Shaft
in „Schrittmotor -> Schrittmotorsteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
stm32g030c6.pdf
- - - 5 mA Eingespritzter Strom am Pin VDDIO1-VIN Spannung über VDDIO1 IINJ = 5 mA - - 2 V Rd - - 300 ÿ Dynamischer Serienwiderstand für Dioden IINJ = 5 mA DS12991 Rev. 4 61/94 79 Machine Translated by Google Elektrische Eigenschaften STM32G030x6/x8 Abbildung 17. Stromeinspeisung in den FT_e-Eingang
in „Muß der STM32G programmiert werden?“ · Mikrocontroller und Digitale Elektronik ·
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CY8C4147AZI.pdf
– 25 µs – Usable Deep Sleep Mode 2 is lowest current range. Mode Mode 1 has higher GBW. I – – SID_DS_1 DD_HI_M1 Mode 1, High current 1400 25 °C I – – SID_DS_2 DD_MED_M1 Mode 1, Medium current 700 25 °C SID_DS_3 I Mode 1, Low current – 200 – 25 °C DD_LOW_M1 µA SID_DS_4 IDD_HI_M2 Mode 2, High current
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Display_Controller.pdf
338 VEXT 33 SEG0 337 VSS 336 REF 335 VDD 326~334 T8~T0 320~325 VOUT_IN 314~319 VOUT_OUT 313 VDD 312 DS1 311 DS0 310 MF0 8 309 MF1 308 MF2 2 307 TA 306 Mode 5 300~305 VSS . . 7 284~299 VSS2 268~283 VDD2 T 262~267 VDD 260~261 D7(SCL) 258~259 S D6(SDA_IN) 256~257 D5(SDA_IN) 254~255 D4(SDA_IN) 252~253 D3(
in „LCD Controler mit Spannungsregulier-Eingängen“ · Mikrocontroller und Digitale Elektronik ·
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EDN_DI_6594092.pdf
thV sFBsi- VFB FB VFB OUT0 IR1 =I R2 +I DS4404 , tuting, wIR1h=yelds: ; R2 = , R2 R FSI =I DETERMINES MAXIMUM Equation 8 V �VR1 R 2 2 IR1S=IR2R+I DS4404SCALE CURRENT IDS4404 = OUTMAX OUTNOM . (8) Equation 5 FOR DS4404 R 1 In margin
in „Einstellbarer Step-Up Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
EDN_DI_6594092.pdf
thV sFBsi- VFB FB VFB OUT0 IR1 =I R2 +I DS4404 , tuting, wIR1h=yelds: ; R2 = , R2 R FSI =I DETERMINES MAXIMUM Equation 8 V �VR1 R 2 2 IR1S=IR2R+I DS4404SCALE CURRENT IDS4404 = OUTMAX OUTNOM . (8) Equation 5 FOR DS4404 R 1 In margin
in „mit µc einstellbarer Spannungsregler“ · Mikrocontroller und Digitale Elektronik ·
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ADG714_715.pdf
max I = 3 mA OL SINK 0.6 V max ISINK= 6 mA DYNAMIC CHARACTERISTICS 2 t ADG714 20 ns typ V = 3 V, R = 300 Ω, C = 35 pF ON S L L 32 ns max tON ADG715 95 ns typ VS= 3 V, RL= 300 Ω, C L 35 pF 140 ns max t ADG714 8 ns typ V = 3 V, R = 300 Ω, C = 35 pF OFF S L L 15 ns max tOFFADG715 85 ns typ VS= 3 V, RL= 300
in „Arduino Uno & ADG714 via SPI funktioniert nur sporadisch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CS5532-34-BS_F3.pdf
with crystal parameters. This specification does not apply when using an external clock source. 10 DS755F3 CS5532/34-BS CS t3 SDI MSB MSB-1 LSB t4 t5 t1 t6 SCLK t2 Figure 1. SDI Write Timing (Not to Scale) CS t7 t9 SDO MSB MSB-1 LSB t8 t2 SCLK t1 Figure 2. SDO Read Timing (Not to Scale) DS755F3 11 CS5532
in „CS5534 Referenzspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
12887.pdf
– +5 Volt Supply – End of clock update cycle GND – Ground DESCRIPTION The DS12887 Real Time Clock plus RAM is designed to be a direct replacement for the DS1287. The DS12887 is identical in form, fit, and function to the DS1287, and has an additional 64 bytes of general purpose
in „Anschluss von AT89C55WD“ · Mikrocontroller und Digitale Elektronik ·
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Datei
880eed3fe10373c0a5d4ca8d0892cc67.txt
SUPPORT is not set # FS20_SEND_SUPPORT is not set # FS20_RECEIVE_SUPPORT is not set # FS20_RECEIVE_WS300_SUPPORT is not set # DEBUG_FS20_REC is not set # DEBUG_FS20_REC_QUEUE is not set # DEBUG_FS20_REC_VERBOSE is not set # DEBUG_FS20_WS300 is not set # DEBUG_FS20_WS300_VERBOSE is not set # IR_SUPPORT
in „Ethersex will nicht so richtig“ · Mikrocontroller und Digitale Elektronik ·
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PDF
VRE104c_Thaler.pdf
VOLTAGE ERRORS Initial Error 800 400 800 400 μV Warmup Drift(1) 2 1 2 1 ppm Tmin- Tmax 400 200 600 300 μV Long-Term Stability 6 * * * ppm/1000hrs Noise (.1-10Hz) 3 * * * μVpp OUTPUT CURRENT Range ±10 * * * mA REGULATION Line 6 10 * * * * * * ppm/V Load 3 * * * ppm/mA OUTPUT ADJUSTMENT Range 10 * * *
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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PDF
datenblatt_pic.pdf
10 k 600 400 200 100 k 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) 2001 Microchip Technology Inc. DS35007B-page 65 PIC16F84A FIGURE 10-9: AVERAGE F OSC vs. V DD FOR R (RC MODE, C = 300 pF, 25 C) ° 900 800 3.3 k 700 600 5.1 k z H500 ( e F400 10 k 300 200 100 100 k 0 2.0 2.5 3.0 3.5 VDD (V) 4.0 4.5 5.0
in „Flußdiagramm Digitale stoppuhr auf PIC 16F84A“ · Mikrocontroller und Digitale Elektronik ·
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16F84.pdf
10 k 600 400 200 100 k 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VDD (V) 2001 Microchip Technology Inc. DS35007B-page 65 PIC16F84A FIGURE 10-9: AVERAGE F OSC vs. V DD FOR R (RC MODE, C = 300 pF, 25 C) ° 900 800 3.3 k 700 600 5.1 k z H500 ( e F400 10 k 300 200 100 100 k 0 2.0 2.5 3.0 3.5 VDD (V) 4.0 4.5 5.0
in „Probleme mit Taktversorgung auf Steckbrett“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MRF150.pdf
Zero Gate Voltage Drain CurrDSt= 50 V,GS = 0) DSS — — 5.0 mAdc Gate–Body Leakage CurrentGSV= 20 V, DS = 0) GSS — — 1.0 Adc ON CHARACTERISTICS Gate Threshold Voltage (= 10 V, I = 100 mA) V 1.0 3.0 5.0 Vdc DS D GS(th) Drain–Source On–Voltage (V= 10 V, I = 10 A) V 1.0 3.0 5.0 Vdc GS D DS(on) Forward Transconductance (V= 10 V, I = 5.0 A) g 4.0 7.0 — mhos DS D fs DYNAMIC CHARACTERISTICS Input CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Ciss — 400 — pF Output CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer CapacitancDS(= 50 V,GS =
in „Wärmeleitpad gesucht für POWER FET MRF150“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFHS8342-DataSheet-v01_01-EN.pdf
IRFHS8342PbF HEXFET Power MOSFET V 30 V TOP VIEW DS V GS max ± 20 V D R DS(on) max D 1 6 D D 16.0 mΩ D G (@V GS = 10V) D 2 D 5 D Q g(typical) 4.2 nC D (@V = 4.5V) D S GS G 3 S 4 S S I D 8.5 d A 2mm x 2mm PQFN (@T c(Bottom) 25°C) Applications • Control
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SMK0825F.pdf
temperature ② L=8.9mH, I =8A, V =50V, R =25Ω, Starting T =25℃ AS DD G J ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature KSD-T0O040-001 2 SMK0825F Electrical Characteristic Curves Fig. 1 D - V DS Fig. 2 D - V GS ℃ - Fig. 3 RDS(on)- ID Fig. 4 S - VSD Fig. 5 Capacitance - V Fig. 6 V - Q DS GS G ℃ KSD-T0O040-001 3 SMK0825F Fig. 7 VDSS - T J Fig. 8 RDS(on)- T J C C Fig. 9 ID - T C Fig. 10 Safe OperatingArea * KSD-T0O040-001 4 SMK0825F Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive
in „Mosfet defekt“ · Analoge Elektronik und Schaltungstechnik ·
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AN1325_Metall_Over_Cap.pdf
Cost and Low Power • Simple to implement • Flexible button shape 2010 Microchip Technology Inc. DS01325A-page 5 AN1325 NOTES: DS01325A-page 6 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
in „Tastenverriegelung (Tastensperre)“ · Mikrocontroller und Digitale Elektronik ·
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DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
in „TFT Display 8bit 16bit 8080 Interface über LVDS“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS90LV047A.pdf
D S January 2003 9 0 V 0 4 DS90LV047A A 3V LVDS Quad CMOS Differential Line Driver 3 V General Description Features L The DS90LV047A is a quad CMOS flow-through differential Mbps (200 MHz) switching rates V line driver designed for
in „Analogsignal über Twisted-Wire übertragen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS1302_V12.bas
************************************************************************ '************************ DS1302 RealTimeClock ********************************* '******************************************************************************* '****************************** Allgemein ************************
in „DS1302 Bascom mit Mega8 ohne Funktion“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2013821185244121.pdf
Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode MOSFET FEATURES 8205A 5A,20V.r DS(on)0.025 @ VGS= 4.5 V rDS(on) 0.040 @ VGS = 2.5 V. TSSOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) P aram eter S ym bol R ating U nit D rain-S ource V oltage VD S 20 V G ate-S ource
in „Laderegler Li-Ion 3s“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sm6t100a.pdf
200 60 sec (90 max) -3 °C/s 150 -6 °C/s 100 0.9 °C/s 50 Time (s) 0 30 60 90 120 150 180 210 240 270 300 Note: Minimize air convection currents in the reflow oven to avoid component movement. Maximum soldering profile corresponds to the latest IPC/JEDEC J-STD-020. DS0684 - Rev 14 page 9/12 SM6TxxA, SM6TxxCA
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tps62200.pdf
TPS62200 VI= 3.6 V to 6 VO I = 0 mA 0% 3% Feedback voltage Adjustable VI= 3.6 V to 6 V, 0 mA O I ≤ 300 mA –3% 3% TPS62207 V = 2.5 V to 6 V, I = 0 mA 0% 3% I O 1.2 V VI= 2.5 V to 6 V, 0 mA O I ≤ 300 mA –3% 3% TPS62201 VI= 2.5 V to 6 VO I = 0 mA 0% 3% 1.5 V VI= 2.5 V to 6 V, 0 mA O I ≤ 300 mA –3% 3% TPS62204
in „Schaltregler für 1,2 V (oder 1,5 V ?) aus Li-Ion-Akku“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datasheet_LT3433.pdf
SHDN 3433 TA03aINL-H: 8.3V 3433 TA03b 3433f 13 LT3433 U TYPICAL APPLICATIO S 8V-60V to 12V Converter DS1 L1 B160A 200µH TDK SLF12565T-221M1R0 VOUT 12V D2 8V < IN< 18V: 125mA 1N4148 DS2 + C5 18V < V < 60V: 380mA B120A 47µF IN C7 V SW_L 25V 0.47µF BST 20V SW_H PWRGND VIN LT3433 8V TO 60V V IN VOUT D1 C6
in „Burst Mode Lt3433“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
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TNY256.pdf
125 135 145 °C Temperature Thermal Shutdown 70 °C Hysteresis OUTPUT TJ= 25 °C 15.6 18.0 ON-State R DS(ON) D = 50 mA Ω Resistance T J 100 °C 25.7 30.0 OFF-State I V BP= 6.2 V, EN/UV 0 V, DSS V = 560 V, T = 125 °C 50 µA Leakage DS J Breakdown BV VBP= 6.2 V, EN/UV 0 V, Voltage DSS I = 100 µA, T = 25 °C
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en.DM00023581.pdf
= 1.5 A — 5.0 — S transconductance C Output capacitance V = 13 V; f = 1 MHz; = 0 V — 150 — pF OSS DS IN Doc ID 018529 Rev 2 7/21 Electrical specifications VNS3NV04DP-E Table 7. Switching Symbol Parameter Test conditions Min Typ Max Unit d(on) Turn-on delay time 90 300 ns tr Rise time V DD= 15 V; D =
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