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Schaltplan_Durchflussregler_V2.pdf
+3V3 +3V3 IC2 R TP1 621-AP7370-33Y-13 +3V3 6 0A S1 R 5 2 1 1 O2 D1 3 VI VO 1 , 1N4148W E TP2 DS01-254-S-01BE C4 GND + C5 C7 DE 100n 2 47u 100n ER L G GND GND GND GND GND GND G N E U 0 G - O - S G R 1 V 3 IO5_IR_VERSORGUNG _ 2 I 6 5 r I s
in „Redesign Platine“ · Platinen ·
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DS-TWN4-MultiTech-LEGIC-42_DocRev14.pdf
option available on request + 3D construction data (STEP) available on request © 2019 – ELATEC GmbH – DS TWN4 MultiTech LEGIC 42 – DocRev14 – 9/2019 Page 1 of 3 TECHNICAL DATA FREQUENCY 125 kHz/134.2 kHz (LF) / 13.56 MHz (HF) ANTENNA Integrated HOUSING Material: ABS UL94-V0, color: black or white DIMENSIONS
in „Erbitte Hilfe bei RFID Projekt Tierchip von Streunerkatzen auslesen“ · Offtopic ·
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IS42S16160B.pdf
tCMH DQM/DQML DQMH AS tAH A0-A9, A11, A12 ROW COLMNm (2) AS tAH A10 ROW AS tAH BA0, BA1 BANK BANK DS tDH DS tDH tDS tDH DS DH tDS tDH tDS tDH DQ DINm DINm+ 1 DINm+ 2 D INm+3 DINm- 1 tRCD Full page completed DON'T CARE Notes: 1) Burst Length = Full Page 2) x16: A9, A11, and A12 = "Don't Care" x8: A11
in „Fragen zu SDRAM“ · Mikrocontroller und Digitale Elektronik ·
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Tabelle mit Pinbelegungen verschiedener Mikrocontroller-Boards
| STM32F4x1 Nucleo | STM32F4x1 Blackpill | STM32F103C8T6 BluePill | Remarks User button | GPIO: PC13 (on board) | GPIO: PA0 (on board) | GPIO: PA6 | on board Board LED | GPIO: PA5 | GPIO: PC13 | GPIO: PC13 | on board TSOP312388 (IRMP) | GPIO: PC10 | GPIO: PB4 | GPIO: PB3 | DS18xx (Onewire) | GPIO: PD2
in „WordClock mit WS2812“ · Projekte & Code · · Screenshots
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Datei
Drehzahl-ST.asm
wr0 ; IRQ bei k = 1/2 * fpwm ldi drehzahl, dz ; nur bei 1 MHZ !!! ; Prescaler = 128 ; Fclk/128 -> DS S.119 T46, Phase Correctly PWM - ein DS. S.117 T42 ; OC2 pin 14 PB3 - HIGH = Match->TOP->Match -DS. S118 T45 ldi wr0, 0x75 ; 01110101 out TCCR2, wr0 ; ; Timer0/Counter0 einstellen ; f = 3,815 KHz ; T
in „Fehler im ASM-Code zur Motorsteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1331276981-613264.pdf
pin. 8 CSD I Corrent sense input pin. C h t i g B r n - O ©On-Bright Electronics Confidential OB_DOC_DS_333000sheet - 3 - High Performance LED Lighting Driver Functional Block Diagram qg u ▯ Œ PWM t til Figure2: OB3330 Functional Block Diagram of htC Bri On- ©On-BrigCo- 4 -nOB_DOC_DS_333000sheet OB3330
in „LED Netzteil identifizierung“ · Analoge Elektronik und Schaltungstechnik ·
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MCP3221.pdf
LSB 1.5 LSB DD V DD-2.5 LSB 2.5 LSB FIGURE 4-1: Transfer Function. 2003 Microchip Technology Inc. DS21732B-page 13 MCP3221 4.5 Differential Non-Linearity (DNL) 4.8 Gain Error In the ideal A/D converter transfer function, each code The gain error determines the amount of deviation from has a uniform
in „Suche Bauteilbezeichnung 5-Pin SOT-23 mit "S1SD" Marking“ · Mikrocontroller und Digitale Elektronik ·
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DG506_507_508_509A.pdf
15 A2 EN 2 15 GND NC 3 26 S8 NC 3 26 S8A V- V+ V- 3 14 GND 3 14 S16 4 25 S7 S8B 4 25 S7A S S S 1 4 13 V+ 1A 4 13 1B S15 5 24 S6 S7B 5 24 S6A S2 5 12 S S2A 5 12 S S 6 23 S S 6 23 S 5 2B 14 5 6B 5A S3 6 11 S6 S3A 6 11 S3B S13 7 22 S4 S5B 7 22 S4A S4 7 10 S7 S4A 7 10 S4B S12 8 21 S3 S4B 8 21 S3A D 8 9 S8
in „Bestimmtes Bauteil gesucht zur Signalverteilung“ · Mikrocontroller und Digitale Elektronik ·
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93LC46.pdf
0 0 1 0 X X 11 10 High-Z DO Busy Ready High-Z Ensured by Characterization at Vcc = 4.5V to +5.5V. 13 2004 Microchip Technology Inc. DS21712B-page 9 93LC46/56/66 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE ROTATED Name PDIP SOIC TSSOP Description
in „Probleme mit SPI EEPROM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IPD025N06N-DS-v02_05-EN.pdf
Symbol Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 5200 6500 pF VGS0 V, V =DS V, f=1 MHz Output capacitance Coss - 1200 1500 pF VGS0 V, V =DS V, f=1 MHz Reverse transfer capacitance Crss - 48 96 pF VGS0 V, V =DS V, f=1 MHz Turn-on delay time d(on) - 16 - ns VDD30 V, V =GS V, I
in „N-Channel Mosfet gesucht - IPD025N06N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
app105.pdf
the DS1624 already provides a 13– bit number with 0.03125°C resolution, no further processing is possible to achieve any higher temperature resolution. DS1821: 1. Issue Start Convert protocol (EEh). 2. When
in „DS18S20 hohe Auflösung berechnen“ · Mikrocontroller und Digitale Elektronik ·
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irfb3077pbf.pdf
On-Resistance ––– 2.8 3.3 mΩ V = 10V, I = 75A g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= 20V Gate-to-Source
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
User_Guide_ETEMB043013XDHAL_Interface_Description_V1.0.pdf
PCB 20-21054-4 V1.0 Written by: Paul Kleist Reviewed by: Channing Interface Description V1.0 2020-03-13 page 1 of 17 Revision history: Date Page, change Version 2020-03-13 First Release 1.0 Legal Disclaimer: THIS INFORMATION / SOFTWARE IS PROVIDED BY THE COPYRIGHT HOLDERS AND CONTRIBUTORS "AS IS" AND ANY
in „EDT Display Interface mit STM32F7“ · Mikrocontroller und Digitale Elektronik ·
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Datei
shugart.txt
POW2 +12 V 4 POW1 FDC 2 DENSEL 2 REDWC 5 LSD 2 DENSEL/REDWC FDC 4 INU/HLD 4 NC 16 INU/DLOCK FDC 6 DS3/4 6 NC 32 SEL4 Drive 2 IDX 8 IDX 8 INDEX 6 IDX 20 IDX FDC 4 DRSEL 10 DS0/1 10 MOTEA 7 MOT1 26 SEL1 FDC 12 DS1/2 12 DRVSB 8 DS2 28 SEL2 FDC 14 DS2/3 14 DRVSA 9 DS1 30 SEL3 FDC 10 MOTon 16 MOTON 16 MOTEB
in „Ersatz einer Diskette im Diskettenlaufwerk??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET_IRF630_N-Ch_TO-220AB_200V_9_A.pdf
Gate Threshold Voltage VGS(TH) V GS = VDS D I = 250µA 2 - 4 V Zero Gate Voltage Drain Current IDSS V DS = Rated BVDSS , VGS = 0V - - 25 µA o V DS = 0.8 x Rated BDSS , VGS = 0V, TJ= 125 C - - 250 µA On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , GS = 10V 9 - - A Gate to Source Leakage
in „Hilfe bei transistor auswahl/suche“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN11158_Understanding_MOSFET_data_sheet_parameters__NXP.pdf
aaa-002473 (2) IDS (3) (A) (1) 10 (5) (4) 1 10-1 1 10 102 103 VDS (V) (1) R limit (V /I is constant) DS(on) DS DS (2) Maximum pulsed drain current (IDS is constant) (3) Maximum pulsed power dissipation (V DS DS is constant) (4) Maximum allowed voltage (V DS is constant) (5) Linear mode derating - a departure
in „Flyback-Wandler Störungen auf Versorgung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
twi_lib.c
; twi1.Addr_SLA_Base = DS1631_BaseAdr; twi1.NrBytesToTransmit = 1; twi1.NrBytesToReceive = 0; twi1.TxRxBuffer[0] = DS1631_StartConvert; // &h51 TWI_TransmitReceive(); } // TWI_DS1631_StartConvertT // Reads Temperatur out of a
in „TWI MUX per SW an einem Port“ · Mikrocontroller und Digitale Elektronik ·
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PDF
z16c30um.pdf
an 8-bit data bus) the USC samples the and other pins as described below, at the rising/trailing AD13-AD9 pins as a RegAd to select which register to edge of /AS, or, if /AS is pulled up so that it’s always Hiaccess, and samples AD8 as U//L to select which byte of at the falling/leading edge of /DS,
in „unbekanntes Bus (Frame) entziffern, brauche Hilfe.“ · Mikrocontroller und Digitale Elektronik ·
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AVRnDxBoard.pdf
100n C20 3 3 1 D C 2 D 1 C 4 3 Q5 A0 V P0 2 5 4 NXV75UP 3 A1 P1 6 5 2 VCC A2 P2 R48 1K P3 7 6 1 U7 13 7 3 ~{INT} RTC DS323x P4 9 8 R31 VCC 10 9 P5 BAT1 4 5 14 SCL P6 11 10 100K VCC ~{INT}/SQW 15 12 11 6 SDA N P7 ~{RST} G 12 13 JP19 Battery 18 8 16 SCL 17 14 VBAT SDA 15 VBE R32 15 3 16 GND 32KHz 220 100n C21 Alternatively suitable footprintalso for DS321 and DS3232M E E Sheet:/I2C/ FileI2C.kicad_sch Title: I2C Section Size:A3 Date:2024-06-19 Rev: KiCad E.D.A. 8.0.3 Id: 3/10 F 1 2 3 4 5 6 7 8 F 1 2 3 4 5 6 7 8 A A B B C C D D E E Sheet:/OneWire/ FileOneWire.kicad_sch
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DE2012010361.pdf
R2 R3 R4 R5 R6 R7 J1 1 5 10 12 U1A 9k31 20k 7k15 14k3 3k65 4k22 14 1 CD1 2 U1B 7 U1C 8 U1D 3 2 6 9 13 1 U2A 3 R10 2 1 TO ACTIVE ANTENNA R11 C8 C4 C5 C6 C7 1 A3V3 4n7 120p 120p 120p 4n7 BSR18A A3V3 = mica 1% C9 Q1 = metal film 1% J4 10n R12 1 4 8 R13 R14 1 1 ISO1 6 C13 U1 = MCP6024 PWM1 6 U2 = MCP6022
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LT3800.pdf
a CC BOOST CC DS(ON) voltagecanbeusedtodetermineQ G.Requireddrivecur- normalized R DS(ON) vs Temperature curve in a MOSFET rent for a given FET follows the simple relation: data sheet. GATE = Q G(8V)• O TheC RSS termistypicallysmallerforhighervoltageFETs
in „LT3800 Frage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
emmc.pdf
Information Base Part Number Density Package Shipping MTFC4GACAJCN-4M IT 4GB 153-ball VFBGA Tray 11.5mm x 13.0mm x 1.0mm Tape and reel MTFC8GAKAJCN-4M IT 8GB 153-ball VFBGA Tray 11.5mm x 13.0mm x 1.0mm Tape and reel Device Marking Due to the size of the package, the Micron-standard part number is not printed
in „Pin-Swap/Cross IC?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS-NEOZED-D0-fuse-links-gG-400-440VAC-DE.pdf
Ausschaltvermögen AC (IEC) 50 kA Baugröße D01 bis D03 Niederspannungssicherungseinsätze nach IEC / DS-LFDID0GGNEFL-04-0321_DE Mersen behält sich das Recht vor ohne vorherige Ankündigung jede in diesem Datenblatt enthaltene Information zu verändern, EP.MERSEN.COM zu aktualisieren oder zu korrigieren.
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Datei
test.ino
msg.position == msg.length) { irq_flag = irq_flag_e::end; } } break; } OCR1A = delay; } }; OneWire ds(9); void setup() { Serial.begin(115200); digitalWrite(13, HIGH); pinMode(13, OUTPUT); delay(10); digitalWrite(13, LOW); TCCR1A = (1 << COM1A0); // CTC (Mode 4) TCCR1B = (1 << WGM12); uint8_t data[3] = {0x33, 0xff, 0x00}; ds.write(data, 3); } void loop() { } ISR(TIMER1_COMPA_vect) { ds.event_handlerCTC(); }
in „Atmega328 1-Wire mit Timer CTC/PWM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AG101.pdf
S12 (ang) S22 (dB) S22 (ang) 50 -4.72 -30.88 15.44 164.91 -21.66 30.26 -9.38 -40.39 250 -8.67 -27.48 13.93 165.39 -20.26 3.92 -16.70 -32.88 500 -8.96 -37.68 13.75 157.18 -20.14 -2.25 -17.56 -31.25 750 -9.06 -51.15 13.60 148.11 -20.02 -7.65 -18.25 -35.67 1000 -9.04 -66.87 13.47 137.91 -19.92 -10.63 -19.05 -43.62 1250 -9.00 -82.11 13.39 128.62 -19.85 -15.19 -20.28 -51.49 1500 -8.89 -97.31 13.13 118.57 -19.73 -18.74 -21.30 -61.37 1750 -8.74 -112.48 12.91 109.09 -19.56 -23.00 -22.57 -73.75 2000 -8.65 -128.51 12.68 99.48 -19.71 -28.33
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RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
Technology Corporation. All rights reseis a registered trademark of Richtek Technology Corporation. DS9080-05 June 2017 www.richtek.com 13 RT9080 1 1 2 2 DETAILA Pin #1 IDand Tie Bar Mark Options Note:TheconfigurationofthePin#1identifierisoptional, but must be located within the zone indicated. Dimensions
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R7G_-_T7G.pdf
26 434.325 (2) 10 433.525(2) 27 434.375(2) 11 433.575(2) 28 434.425(2) 12 433.625(2) 29 434.475(2) 13 433.675(2) 30 434.525 (1) 14 433.725(2) 31 434.575(2) 15 433.775(2) 32 434.625(2) 16 433.825(2) 33 434.675(2) 17 433.875(2) 34 434.725(2) (1) Stock Item (2) Future Development DS307-7 Oct 05 ©2004 REG
in „LED als Signalanzeige für Funkempfänger R7G“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Ausschnitt eines Schaltplans
RA102 8x4,7k -5V P00 P01 P02 P03 P04 P05 P07 IC 108 DS 8897 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 2 1 0 ZA101 Nec. Fip 9D13 -5V RA101 8x4,7k -5V PG G5 G4 G3 G2 G1 G0 P17 P16 P15 P14 P13 P12 P11 P10 IC 107 DS 8897 18 17 16 15 14 13 12 11 10 9 8 7 6 5 2
in „VFD Segment leuchtet immer“ · Analoge Elektronik und Schaltungstechnik · · Schaltpläne
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PDF
20002019c.pdf
= Total load capacitance V DD = MOSFET driver supply voltage 2006-2016 Microchip Technology Inc. DS20002019C-page 13 MCP1406/07 5.0 PACKAGING INFORMATION 5.1 Package Marking Information (Not to Scale) 8-Lead SOIC (3.90 mm) Example MCP1406E SN ^^1510 256 NNN 5-Lead TO-220 Example MCP1406 XXXXXXXXX EAT
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.h
use_pos_craq 0 #if use_pos_spartec == 1 #define use_i2c_lcd 1 //#define use_no_lcd 1 #define tr_wzb ds1820_val[0] #define tr_vl ds1820_val[1] #define tr_rl ds1820_val[2] #define tr_t0 ds1820_val[3] #define tr_t1 ds1820_val[4] #define tr_au ds1820_val[5] #define tr_hg ds1820_val[6] #endif #if use_pos_flur
in „Temperatursensor DHT22/AM2302 // ATMega328P“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Drehzahl-ST.asm
wr0 ; IRQ bei k = 1/2 * fpwm ldi drehzahl, dz ; nur bei 1 MHZ !!! ; Prescaler = 128 ; Fclk/128 -> DS S.119 T46, Phase Correctly PWM - ein DS. S.117 T42 ; OC2 pin 14 PB3 - LOW = Match->TOP->Match -DS. S118 T45 und PD5 = LOW -> rechts ldi wr0, 0x65 ; 01100101 out TCCR2, wr0 ; ; Timer0/Counter0 einstellen
in „Motorentreiber L293D“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
boot.asm
) bootdrive db 0 ; text db "Hier kommt der Test-Bootloader fuer Christian von mikrocontroller.net",13,10,"Das Betriebssystem wird geladen...",13,10,0 label1: mov ax, cs ; Die Segment-Register aktualisieren mov ds, ax mov es, ax cli ; Jetzt bauen wir uns noch einen Stack (dabei lassen wir keine Interrupts
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PDF
DS_IRFB7430.pdf
Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 150 ––– ––– S V = 10V, I = 100A DS D Qg Total Gate Charge ––– 300 460 nC D = 100A Q Gate-to-Source Charge ––– 77 ––– V =20V gs DS Qgd Gate-to-Drain ("Miller") Charge ––– 98 ––– VGS= 10V g Q Total Gate Charge Sync. (Q - Q ) ––– 202 –––
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP4821-MCP4822.pdf
9 9 0 0 1 1 2 2 3 3 2 2 2 3 3 3 3 3 3 3 3 3 3 3 3 > 3 3 3 4 4 4 4 4 4 4 4 DD (μA) IDD(μA) FIGURE 2-13: MCP4821 I DD Histogram FIGURE 2-16: MCP4822 I DD Histogram (V DD = 5.0V). (V DD = 5.0V). DS21953A-page 10 © 2005 Microchip Technology Inc. MCP4821/MCP4822 Note: Unless otherwise indicated, T = +25°C
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS32kHz_-_temp-co_osci_1min_per_y.pdf
§ Low-power consumption GND § Surface mountable using BGA package GND 9 9 – V : C2, C3, D2, D3 CC DS32kHz 36-Pin SMD – V BAT: A4, A5, B4, B5 (Top View) – 32kHz: C4, C5, D4, D5 – GND: All Remaining Balls NC 1 14 NC – TPIN: A7, A8, B7, B8, C7, C8, 2 13 VCC D7, D8 3 12 32kHz OUT GND 4 11 TPIN ORDERING INFORMATION VBAT 5 10 TPIN DS32kHz/BGA 36-Pin BGA 0ºC to +70ºC NC 6 9 NC DS32kHz-N/BGA 36-Pin BGA -40ºc to +85ºC NC 7 8 NC DS32kHz/DIP 14-Pin DIP 0ºC to +70ºC DS32kHz-N/DIP 14-Pin DIP -40ºc to +85ºC DS32kHz 14-Pin DIP Module (300
in „RTC mit ATMega8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HAP-CU-TechDok-20080319.pdf
6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 LByte 3 2 1 0 -1 -2 -3 -4 2 2 2 2 2 2 2 2 Bit 15 Bit 14 Bit 13 Bit 12 Bit 11 Bit 10 Bit 9 Bit 8 HByte S S S S S 2 6 25 24 Abb. 4.4: Werteformat beim digitalen Thermometer (DS18B20) Die nachfolgende Tabelle gibt einige Temperaturwerte und deren zugehöriges Bitmuster
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PDF
PSMN5R5-60YS.pdf
breakdown voltage D = 250 µA; V GS = 0 V; j = 25 °C 60 - - V VGS(th) gate-source threshold D = 1 mA; V DS= V GS; Tj= 25 °C; 2 3 4 V voltage see Figure 10 and 11 VGSth D = 1 mA; V DS= V GS; Tj= -55 °C; - - 4.6 V see Figure 11 D = 1 mA; V DS= V GS; Tj= 175 °C; 0.95 - - V see Figure 11 DSS drain leakage current
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PDF
camaro_stand_alone.pdf
PD4 6 R T 11 R10 9833 Genrator PWR_FLAG 5 PD5 TX-328P D5 4 T2 OK1 D + PD6 12 RX-328P D6 0 BC337 N 3 13 4 PC817 G GND D PD7 2 N 2,2k +5V GND5 +5V 7 k 2 N D 1 3 2 1 , 1 G S R 4 8 R3 220 I 4 1 Luefter2 0 0 0 M J1 1 1 1 DS18B20 R11 X X X DS1820 OK2 V GND + C C Brake und Getriebetemp Eingänge Wahlhebel GND
in „Stn1110 am atmega2560 uart probleme“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MTE011N10RFP-CystechElectonics.pdf
- - V V GSV, I =D50μA ∆BV DSS/∆Tj - 74 - mV/C Reference to 25C, ID=250μA V GS(th) 2.0 - 4.0 V V DS = V GSI D250μA *G FS - 14.5 - S V DS =10V, ID=10A IGSS - - ±100 nA V GS20V IDSS - - 1 μA V DS =80V, V GS =0V - - 5 V DS =80V, V GS =0V, Tj=55C *R DS(ON) - 11 13.8 m Ω V GS =10V, ID=11A Dynamic *Qg - 42 - *Qgs - 13 - nC V DD0V, I =2DA,V =10VGS *Qgd - 11.9 - *td(ON) - 26.8 - *tr - 21.6 - V DD0V, I =1DA, V =10GS ns Ω *d(OFF) - 50 - R G4.7 *tf - 10.8 - Ciss - 2442 - Coss - 294 - pF V GSV, V =3DS, f=1MHz Crss - 21
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3930.pdf
5 DS3930 16 LO 0-5 2-WIRE INTERFACE SCL LO0-5 I/O0 6 15 HI3-5 DS3930 I/O 7 14 I/0 H3-5 1 W3 I/O2 8 13 W4 NONVOLATILE I/O I/1 W3 V CC 9 12 W 5 VCC I/2 W4 TERMINALS W GND 10 11 I/3 VCC 5 DECOUPLI0.1µFP DIGITAL
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PDF
LM3647-1.pdf
dimensioned for a maximum current of about 1.1A. This was calculated using the following formula: DS101318-13 4.3.3.2 Constant Current Power Supply Example: A constant current power supply can only be used with R3 = 5.1 k , R1 = 100 k , R5 = 0.047 , V REF = 2.5V Ni-Cd/Ni-MH batteries, it can not be
in „Heizungssteuerung mit Funk-Temperaturfühler“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Devices.txt
TP06SQ 14 RES10 14 QG5860 14 MA04-2 14 MA04-1 14 L-EU0204/5 14 IRFP240 14 CPOL-EU153CLV-0405 14 C1206 13 NC 13 LEDCHIP-LED0805 13 JP1Q 13 IRF540 13 HD-H103 13 ELC-5 13 CRYSTALHC49U70 13 CPOL-EUSMCC 13 CPOL-EUB45181A 13 B-DIL 13 1N4446 12 TRIM_EU-B25P 12 TLC5940-PWPOTV 12 SJ 12 RESEU-18 12 R 12 C-2.5-5/2
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
gbdso_uk.pdf
13 REF– A1 21 1 G 7 15 9 D1 13 2 2 3 A13 1 +5V D2 100n NC DQ 12 3 IC6 2 ECLK 5V 5V A SOUT 14 12 11 74HC138D 3 DS1267S100 4 WR C13 10 5 4 A14 4 RD BAV199 3 H1 L1 4 9 6 5 ECLK 5 RAM_CS D1 7 & 6 A15 A0 6 S2
in „Bameboy-LCD mit avr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
gbdso_uk.pdf
13 REF– A1 21 1 G 7 15 9 D1 13 2 2 3 A13 1 +5V D2 100n NC DQ 12 3 IC6 2 ECLK 5V 5V A SOUT 14 12 11 74HC138D 3 DS1267S100 4 WR C13 10 5 4 A14 4 RD BAV199 3 H1 L1 4 9 6 5 ECLK 5 RAM_CS D1 7 & 6 A15 A0 6 S2
in „Alternative zu teurem Oszilloskop“ · Analoge Elektronik und Schaltungstechnik ·
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at49f1024.pdf
A0 - A15 Addresses A9 1 40 GND CE Chip Enable A10 2 39 A8 A11 3 38 A7 A12 4 37 A6 OE Output Enable A13 5 36 A5 A14 6 35 A4 WE Write Enable A15 7 34 A3 NC 8 33 A2 I/O0 - I/O15 Data Inputs/Outputs WE 9 32 A1 VCC 10 31 A0 NC No Connect NC 11 30 OE CE 12 29 I/O0 I/O15 13 28 I/O1 I/O14 14 27 I/O2 I/O13 15
in „Atmel Programmiersoftware“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mosfet.pdf
power MOSFET is made up of several components as shown in Figure 8: R = R + R + R +R +R +R +R (1) DS(on) source ch A J D sub wcml where: 25 R source Source diffusion resistance R ch= Channel resistance 7 R A= Accumulation resistance R J= "JFET" component-resistance of the Gate Voltage region between
in „MOSFET - welche Leistung?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mosfet.pdf
power MOSFET is made up of several components as shown in Figure 8: R = R + R + R +R +R +R +R (1) DS(on) source ch A J D sub wcml where: 25 R source Source diffusion resistance R ch= Channel resistance 7 R A= Accumulation resistance R J= "JFET" component-resistance of the Gate Voltage region between
in „NT mit Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Mosfet-Basics-IR.pdf
power MOSFET is made up of several components as shown in Figure 8: R = R + R + R +R +R +R +R (1) DS(on) source ch A J D sub wcml where: 25 R source Source diffusion resistance R ch= Channel resistance 7 R A= Accumulation resistance R J= "JFET" component-resistance of the Gate Voltage region between
in „MOSFET Sättigung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS84.pdf
drain-source breakdown I =D−10 A; V GS = 0 V −50 - - V voltage V GS(th) gate-source threshold ID= −1 mA; V DS = VGS ; voltage see Figure 8 T j= 25 °C −0.8 - −2 V T j= −55 °C - - −1.8 V IDSS drain leakage current V DS = −40 V; VGS = 0 V T j= 25 °C - - −100 nA V DS = −50 V; VGS = 0 V T j= 25 °C - - −10 A T j=
in „Batterie von ADC-Eingang des uC trennen (low power)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
On-Resistance vs. Temperature 16000 16 VGS = 0V, f = 1 MHZ ID= 81A Ciss = gs+ Cgd CdsSHORTED ) C = C ( V DS= 160V rss gd e V = 100V 12000 Coss = ds+ Cgd a 12 DS F C o V DS= 40V ( iss V e c n u i 8000 o 8 a o p - C a , G C , 4 4000 G C V oss Crss 0 0 0 40 80 120 160 200 1 10 100 Q Total Gate Charge (nC) V ,
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
