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BLF188XR_BLF188XRS.pdf
aaa-009592 G p ηD (dB) (%) 26 64 24 48 (4) (3) (2) (1) 22 32 (4) (3) (2) (1) 20 16 18 0 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 PL(W) P LW) V DS = 50 V; f = 108 MHz;pt = 100 s; = 20 %. VDS = 50 V; f = 108 MHz; p = 100 s; = 20 %. (1) IDq = 20 mA (1) IDq = 20
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3066.pdf
forward transfer admittance : |fs| = 5.5 S (typ.) z Low leakage current : DSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : th = 2.0 to 4.0 V DS = 10 V, D = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 600 V Drain−gate voltage GS = 20 kΩ)
in „Reparatur Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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Datei
sub_irMenu.c
=kkdat[5]*10+kkdat[6]; MON=kkdat[7]*10+kkdat[8]; YEA=kkdat[9]*10+kkdat[10]; //wdg20on; #if use_twi ds1307gefunden = i2c_start(0xd0); //0b11010000 - 188?? if (ds1307gefunden==0){ kk_ds1307_setAll();lcd_write(" ok....");}else{lcd_write("err1307");} #endif ir_cmd=10; //wdg20off; //no break case(10):ir_cmd
in „RC5 code einer IR Fernbedienung auslesen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
S6D0154.c
return KAL_FALSE; } } } lcd_reg_index++; while (LCD_IS_RUNNING); return KAL_TRUE; } LCD_Funcs LCD_FUNCS_DS_S6D0154 = { LCD_Init_DS_S6D0154, LCD_PWRON_DS_S6D0154, LCD_SetContrast_DS_S6D0154, LCD_ON_DS_S6D0154, LCD_BlockWrite_DS_S6D0154, LCD_Size_DS_S6D0154, LCD_EnterSleep_DS_S6D0154, LCD_ExitSleep_DS_S6D0154, LCD_Partial_On_DS_S6D0154, LCD_Partial_Off_DS_S6D0154, LCD_Partial_line_DS_S6D0154, /*Engineering mode*/ LCD_GetParm_DS_S6D0154, LCD_SetBias_DS_S6D0154, LCD_Contrast_DS_S6D0154, LCD_LineRate_DS_S6D0154, LCD_Temp_Compensate_DS_S6D0154
in „Nokia N95-Display“ · Mikrocontroller und Digitale Elektronik ·
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MRF89XAM8A.pdf
Application Maestro, CodeGuard, devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial hold harmless Microchip from any and
in „Was darf man von einer PCB-Antenne erwarten?“ · HF, Funk und Felder ·
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PDF
ISL6545-Renesas.pdf
MOSFET’s r DS(ON) product and 9V/µs slew rate which enables high converter • Small Converter Size in 8 Ld SOIC or 10 Ld DFN bandwidth for fast transient performance. The resulting - 300kHz or 600kHz Fixed Frequency
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
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OV5620_CLCC_DS__1.3_.pdf
HIGH R SCL t tSU:STO t LOW t HD:STA SU:DAT SDA(IN) tSU:STA AA tHD:DAT tBUF SDA(OUT) t DH 5620CLCC_DS_014 Table 7 Serial Bus Timing Specifications Symbol Parameter Min Typ Max Unit SCL Clock frequency 400 KHz LOW Clock low period 1.3 µs HIGH Clock high period 600 ns t SCL low to data Out valid 100 900
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MOSFET-FCPF20N60.pdf
operation for system min- iaturization and higher efficiency. l M O S D F { E T z ▯ ▯ G { z G D TO-220 G DS TO-220F { S S Absolute Maximum Ratings Symbol Parameter FCP20N60 FCPF20N60 Unit V Drain-Source Voltage 600 V DSS D Drain Current - Continuous CT = 25°C) 20 20* A - Continuous CT 100°C) 12.5 12.5* A (
in „Berechnen Irr von MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RJH60F5DPQ.pdf
Preliminary Datasheet RJH60F5DPQ-A0 600 V - 40 A - IGBT R07DS0326EJ0200 Rev.2.00 High Speed Power Switching Jul 22, 2011 Features Low collector to emitter saturation voltage V CE(sat) 1.37 V typ. CI = 40 A, VGE= 15 V, Ta = 25°C) Built
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tk18a60v_en_datasheet_110131.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current GSS VGS = ±30 V, DS= 0 V ±1 µA Drain cut-off current DSS VDS = 600 V, GS= 0 V 1 Drain-source breakdown voltage V(BR)DSS D = 10 mA, GS = 0 V 600 V Gate threshold voltage V V = 10 V, I = 0.9 mA 2.5 3.5 th DS
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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24fc256.pdf
5 TF SDA and SCL Fall Time 1.7V VC 5.5V (24FC256) — 100 ns (Note 1) 4000 — ns 1.7V VC 2.5V 600 — ns 2.5V VC 5.5V 6 THDSTA Start Condition Hold Time 600 — ns 1.7V CC 2.5V (24FC256) 250 — ns 2.5V CC 5.5V (24FC256) 4700 — ns 1.7V VC 2.5V 600 — ns 2.5V CC 5.5V 7 TSUSTA Start Condition
in „Wodtke HP-S5 HP Er3 EEPROM Schreib-/Lesefehler“ · Haus & Smart Home ·
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EA8252.pdf
and SOP-8 (with EP) packages and has a good cooling effect and easy to use. Features Built-in Low DS(ON)ower-MOSFETS Efficiency Up to 95% Light Load Efficiency Up to 81% 4.5V to 18V Input Voltage Range Output Adjustable Down to 0.765V 2A Continuous Load Current Fixed 600KHz Switching Frequency
in „Kurioser DC-DC Step Down Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PT4515deutsch.pdf
SOT89-3L China Resources Silicon Technology WWW.CRPOWTECH.COM Seite 5 (Shanghai) Co., Ltd. PT4515HA_DS_Rev CH 1.0 Machine Translated by Google PT4515HA Einzelsegment-Linear-LED-Treiberchip Millimeter Zoll Symbol Mindest Max Mindest Max A2 1.400 1.600 0,055 0,063 B 0,380 0,470 0,015 0,019 b1 0,370 0,430
in „LED mit mehr als 16V“ · Analoge Elektronik und Schaltungstechnik ·
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ADG507A.pdf
V SS VSS VSS V SS VSS V min VDD V DD VDD VDD V DD VDD V max R ON 280 280 280 typ –10 V V S +10 V, DS=1 mA; Test Circuit 1 450 600 450 600 450 600 max 300 400 300 400 max V DD= 15 V ( 10%), SS= –15 V ( 10%) 300 400 max V = 15 V ( 5%), V = –15 V ( 5%) DD SS R ONDrift 0.6 0.6 0.6 %/°C typ –10 V V S +10
in „Videopfad - LM1881 -Sync-Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DMOS_Analog_Switch_Introduction.pdf
353-0261 recommended for the output. Since C GD < C GS The circuit shown in Figure 4 exhibits the r DS(on) this causes less charge injection noise on the vs. analog signal voltage relationship shown in load. Figure 5. As can be seen from Figures 3a and 3b, the When the analog signal excursion is large
in „Gerät elektronisch abschalten“ · Mikrocontroller und Digitale Elektronik ·
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irl7833.pdf
150 ––– ––– S V = 15V, I = 30A DS D Q g Total Gate Charge ––– 32 47 Qgs1 Pre-Vth Gate-to-Source Charge ––– 8.7 ––– V DS= 16V Qgs2 Post-Vth Gate-to-Source Charge ––– 5.1 ––– nC V = 4.5V GS Qgd Gate-to-Drain Charge ––– 13 ––– ID= 30A Qgodr
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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board_file_format_EN.pdf
text width for texts on copper or technical layers. This is not for text on footprints TextPcbSize 600 600 Current text X Y size EdgeModWidth 120 Current Segment width for footprint edition TextModSize 120 600 Current text XY size for texts for footprint edition TextModWidth 120 Current text width for
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2sk3115.pdf
2SK3115 Isolated TO-220 • Gate voltage rating ±30 V • Low on-state resistance ★ (Isolated TO-220) R DS(on= 1.2 MAX. (V GS = 10 V, I = 3.0 A) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (T = 25°C) A Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (V DS= 0 V) VGSS ±30 V
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Bauteile.pdf
W5NB90 900V 9,7S 1Ω 282 12 74xxxx 74150N Multiplexer 13 13 RAM BS62LV256SCP70 8BitRAM 18 14 Triac BT136-600 600V 25A 1661 15 ShuntWiderstand R068 68mΩ 1% 82 16 Optokoppler SFH620A-3 5,3kV Pin 99 17 DualKomparator LM393 SMD 17 Treiber IR327 150 19 IGBT IRG4PH30K 720V 10A TO-247 106 20 Mos-Fet STW13NB60 600V
in „Elektronik Bauteile Neuwertig , meist Leistungselektronik“ · Markt ·
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3703fc.pdf
Oscillator f Oscillator Frequency R = 25k 270 300 330 kHz OSC SET fSYNC External Sync Frequency Range 100 600 kHz tON(MIN) MinimumOn-Time 200 ns DC MAX MaximumDuty Cycle f < 200kHz 89 93 96 % Driver I BG Driver Peak Source Current 1.5 2 A BG(PEAK) RBG(SINK) BG Driver Pull-Down DS(ON) (Note 8) 1 1.5 Ω ITG(PEAK
in „Längs- oder Querregler 40V 250W als Überspannungsschutz für Tiefstellsetzer“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
stb6nk60z.pdf
maximum ratings Value Symbol Parameter Unit TO-220/D²/I²PAK TO-220FP V Drain-source voltage (V = 0) 600 V DS GS V Gate-source voltage ± 30 V GS (1) ID Drain current (continuous) Ct T = 25 °C 6 6 A ID Drain current (continuous) Ct T = 100 °C 3.8 3.8 (1) A IDM (2) Drain current (pulsed) 24 24(1) A P Total
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PDF
stb6nk60z.pdf
maximum ratings Value Symbol Parameter Unit TO-220/D²/I²PAK TO-220FP V Drain-source voltage (V = 0) 600 V DS GS V Gate-source voltage ± 30 V GS (1) ID Drain current (continuous) Ct T = 25 °C 6 6 A ID Drain current (continuous) Ct T = 100 °C 3.8 3.8 (1) A IDM (2) Drain current (pulsed) 24 24(1) A P Total
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
rtc.pdf
Hand-Held Devices PART TEMP RANGE PIN- TOP MARK GPS/Telematics Devices PACKAGE Embedded Time Stamping DS1390U-18 -40°C to +85°C 10 µSOP DS1390 rr-18 Medical Devices DS1390U-3 -40°C to +85°C 10 µSOP DS1390 rr-3 DS1390U-33 -40°C to +85°C 10 µSOP DS1390 rr-33 DS1391U-18 -40°C to +85°C 10 µSOP DS1391 rr-18 DS1391U-3 -40°C to +85°C 10 µSOP DS1391 rr-3 DS1391U-33 -40°C to +85°C 10 µSOP DS1391 rr-33 DS1392U-18 -40°C to +85°C 10 µSOP DS1393 rr-18 DS1392U-3 -40°C to +85°C 10 µSOP DS1392 rr-3 Typical Operating
in „ein Uhrenquartz für AVR und RTC???“ · Mikrocontroller und Digitale Elektronik ·
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Anlogic_EG4S20_DS301_2.6_03_2020.pdf
of FFs 19,600 19,600 19,600 Number of LUTS 19,600 19,600 19,600 Number of Dis-Ram bits 156,800 156,800 156,800 Number of ERAM (9k) 64 64 64 Number of ERAM (32k) 16 16 16 Total ERAM bits 1,088k 1,088k 1,088k Number
in „SDRAM Burst lesen ohne Unterbrechung über Column, Row und Banks hinaus“ · FPGA, VHDL & Co. ·
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PDF
HY2212_EN.pdf
package 3. Applications Multi Cells LiFePO4 Rechargeable Battery Packs. www.hycontek.comhnology Corp DS-HY221page4_EN HY2212 1 Cell Li-ion/Polymer Battery Charge Balance IC 4. Block Diagram 5. Ordering Information Product Name define . www.hycontek.comhnology Corp DS-HY2212page5EN HY2212 1 Cell Li-ion
in „LiFepo4 balancer - China ICs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Vishay-Silcnx_FET_VoltCntrlRES_AN105.pdf
n-channel FETs specifically 3 ) intended for use as voltage-controlled resistors. These de- m vices have r DS(on) values ranging from 20 ▯ to 4,000 ▯, (2 I –1.5 V where VCR2N = 20 – 60 ▯, VCR4N = 200 – 600 ▯, 1 VCR7N = 4 k – 8 k▯. –2.5 V –1.5 V –3.0 V 5 10 Applications for VCRs 0 V VDS(V) 200 A simple application
in „Spannungsgeregelter Widerstand“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CS20N60.pdf
and DS(ON)Typ enhance the avalanche energy. The transistor can be used in variouspowerswitching circuit for systemminiaturization and higher efficiency. The package form is TO-3P(N), which accords with the
in „Suche nach Bauteil“ · Offtopic ·
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PDF
Bauteile.pdf
Erregerspule24 VDC/200 mA 24 Bauteil IGBT IRG4PH30K 720V 10A TO-247 106 25 Bauteil IGBT STGW45HF60WD 600V 45A TO-247 6 26 Bauteil IGBT G4PH30K 300V 33A TO-247 Leistungstransistor 27 Bauteil IGBT IRG 4PH30K 600 10A N Kanal 28 Bauteil Komparator LM339 Bedrahtet 2 29 Bauteil Leiterplatten SteckverbindeFTMH
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IPB180P04P4.pdf
-6 10-5 10-4 10-3 10-2 10-1 100 -V DS[V] tp[s] Rev. 1.3 page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25°C R = f(I ); T = 25°C D DS j DS(on) D j parameter
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IXTA-TP3N50D2_.pdf
I I - 3.75V 1.0 1.E-04 -2V - 4.00V 0.5 1.E-05 -3V 0.0 1.E-06 0 1 2 3 4 5 6 7 0 100 200 300 400 500 600 V DS- Volts V DS- Volts Fig. 5. Drain Current @ T = 100JC Fig. 6. Dynamic Resistance vs. Gate Voltage 1.E+00 1.E+08 ∆ VDS = 350V - 100V VGS = -2.75V 1.E+07 1.E-01 -3.00V s r -3.25V 1.E+06 p h m1.E-02
in „J-FET N-Channel mit gößer 70V Drain / Source Spannung für Konstantstromsenke“ · Analoge Elektronik und Schaltungstechnik ·
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AP3031.pdf
-23-6 Z G X Y E Dimensions (mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch) (mm)/(inch) Value 3.600/0.142 1.600/0.063 0.700/0.028 1.000/0.039 0.950/0.037 Mechanical Data Moisture Sensitivity: Level 3 per JESD22-A113 Terminals: Matte Tin Plated Leads, Solderable per M2003 JESD22-B102 Weight:
in „Verständnisfrage Datenblatt AP3031 PMIC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl3705n.pdf
5.0V, D = 46A ––– ––– 0.018 V = 4.0V, I = 39A GS D VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = GS ,DI = 250µA g Forward Transconductance 50 ––– ––– S V = 25V, I = 46A fs DS D ––– ––– 25 V DS= 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 µA V = 44V, V = 0V, T = 150°C DS GS J
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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irf3205.pdf
On-Resistance Vs. Temperature IRF3205 8000 VGS = 0V, f = 1MHz 20 C = C + C , C SHORTED ID = 59A 7000 iss gs gd ds ) Crss = C gd V V DS = 44V Coss = C ds+ C gd ( V DS = 28V 6000 g16 V = 11V F C iss t DS ( o e 5000 V c e12 a r i 4000 Coss u c S p - a 3000 - 8 , t C a G 2000 Crss , G 4 V 1000 FOR TEST CIRCUIT SEE FIGURE
in „Schaltung zu Kondensatorentladungsschweißen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
5.0V, D = 46A ––– ––– 0.018 V = 4.0V, I = 39A GS D VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = GS ,DI = 250µA g Forward Transconductance 50 ––– ––– S V = 25V, I = 46A fs DS D ––– ––– 25 V DS= 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 µA V = 44V, V = 0V, T = 150°C DS GS J
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN1154_Precision_Temperature_Sensing_with_RTD_Circuits.pdf
REF u 1 µf c 0 RA 1% A r V V s -0.05 DD REF + e PIC 3 RTD M -0.1 MCP3551 - MCU SPI -200 0 200 400 600 800 Temperature (°C) * See LDO Data Sheet FIGURE 1: RTD Instrumentation Circuit Block Diagram and Output Performance [3]. © 2008 Microchip Technology Inc. DS01154A-page 1 AN1154 Ratiometric Measurement
in „PT100 Zehntel Grad Auflösung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS75LX.pdf
Packages Servers PIN CONFIGURATIONS ORDERING INFORMATION PART TEMP RANGE PIN PACKAGE SDA 1 8 VDD 8 SO D DS75LXS+ -55°C to +125°C (150 mils) SCL 2 L S 7 A0 8 SO X 5 DS75LXS+T&R -55°C to +125°C (150 mils), O.S. 3 6 A 2500 Piece 1 DS75LXU+ -55°C to +125°C 8 µSOP GND 4 5 A2 (µMAX) 8 µSOP SO (150 mils) DS75LXU
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PDF
24lc32a.pdf
frequency FCLK — 100 — 400 kHz Clock high time THIGH 4000 — 600 — ns Clock low time TLOW 4700 — 1300 — ns SDA and SCL rise time TR — 1000 — 300 ns (Note 1) SDA and SCL fall time T F — 300 — 300 ns (Note 1) START condition hold time THD:STA 4000 — 600 — ns After this period the first clock pulse is generated START condition setup TSU:STA 4700 — 600 — ns Only relevant for repeated time START condition Data input hold time THD:DAT 0 — 0 — ns Data input setup time TSU DAT 250 — 100 — ns STOP condition setup time TSU:STO 4000 — 600 — ns Output valid
in „Logikanalzyer mit FT232BL“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Masterarbeit.pdf
Halbleiter SiC SiC Si Package TO-276 TO-247-3 PG-TO 263 Abmaße mm 7,5 × 10 × 3 15 × 21 × 5 10 × 9 × 4,5 U DS V 600 900 600 ID A 20 23 22 ϑ C 25 C◦ U GS (typ.) V 5 -4/15 10 R DS(on) m 170 120 85 ϑ J 25 C, typ. Q nC 31 17,3 42 g Q g R DS(on) pC 5270 4844 3570 Q rr nC keine Angabe 115 4400 R KW −1 1 1,3 1,14 TH
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
24C64.pdf
ns (Note 1) START condition hold time T HDSTA 4000 — ns 1.8V≤ VCC ≤2.5V 600 — 2.5V≤ VCC ≤5.5V START condition setup time T SUSTA 4700 — ns 1.8V≤ VCC ≤2.5V 600 — 2.5V≤ VCC ≤5.5V Data input hold time THD DAT 0 — ns (Note 2) Data input setup time T SUDAT 250 — ns 1.8V≤ VCC ≤2.5V 100 — 2.5V≤ VCC ≤5.5V STOP condition setup time TSU STO 4000 — ns 1.8V≤ VCC ≤2.5V 600 — 2.5V≤ VCC ≤5.5V WP setup time TSUWP 4000 — ns 1.8V≤ VCC ≤2.5V 600 — 2.5V≤ VCC ≤5.5V WP hold time THD:WP 4000 — ns 1.8V≤ VCC ≤2.5V 1300 — 2.5V≤ VCC ≤5.5V Output valid from clock TAA — 3500 ns 1.8V≤
in „Merkwürdiger 24C64N“ · Mikrocontroller und Digitale Elektronik ·
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PDF
542-01945-0-Z86E04.pdf
V 300 mA SS Maximum Allowable Current into VDD 220 mA Maximum Allowable Current into an Input Pin –600 +600 A 3 Maximum Allowable Current into an Open-Drain Pin –600 +600 A 4 Maximum Allowable Output Current Sinked by Any I/O Pin 25 mA Maximum Allowable Output Current Sourced by Any I/O Pin 25 mA Total
in „Pollin Ladegerät WCFD0801500IFOON : Rückwärts Ingenieur gesucht !“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1337-DS1337C.pdf
mils) DS1337 DS1337U -40°C to +85°C 8 µSOP 1337 DS1337U+ -40°C to +85°C 8 µSOP 1337 DS1337C -40°C to +85°C 16 SO (300 mils)DS1337C DS1337C# -40°C to +85°C 16 SO (300 mils)DS1337C + Denotes a lead-free/RoHS-compliant
in „Aufwecken mit Low-Level“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sla7024m.pdf
Symbol Test Conditions Min Typ Max Units FET Leakage Current I V = 100 V, V = 44 V — — 4.0 mA DSS DS CC FET ON Voltage V (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600 mV DS(ON) CC OUT (SLA7026M) V CC = 14 V, IOUT = 3 A — — 850 mV FET ON Resistance r (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600
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irl7486mpbf-936689.pdf
applications V DSS 40V Battery powered circuits Half-bridge and full-bridge topologies R typ. 1.0m DS(on) Synchronous rectifier applications Resonant mode power supplies max 1.25m @ V GS = 10V OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters R DS(on)typ.
in „Reparatur Makita XWT08Z (DTW1002Z)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BS170_2N7000.pdf
V, GS= 0 V 1 Zero Gate Voltage Drain Current DSS mA VDS = 60 V, GS = 0 V,JT = 55_C 10 VGS = 10 V, DS = 7.5 V 0.8 On-State Drain Current ID(on) A V GS= 4.5 V,DS = 10 V 0.5 V GS= 10 V,DI = 0.5 A 1.1 2 Drain-Source On-Resistance DS(on) W VGS = 4.5 VD I = 0.2 A 1.6 4 Forward Transconductance gfs VDS = 10
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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xfft_ds260.pdf
Figure 21 10 0 -10 -20 -30 -40 -50 -60 d -70 -80 -90 -100 -110 -120 -130 -140 100 200 300 400 500 600 700 800 900 1000 FFT BinNumber Figure 21: Input Data: 16 Bits DS260 March 1, 2011 www.xilinx.com 51 Product Specification LogiCORE IP Fast Fourier Transform v7.1 X-Ref Target - Figure 22 10 0 -10 -20
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
A100_IRF3415_IF.pdf
VsT pemueratyre IRF3415PbF 6000 V = 0V, f = 1MHz 20 I = 22A CGS = C + C C SHORTED D Ciss= Cgs gd , ds ) V DS = 120V 5000 rss gd ( V DS = 75V Coss= Cds + Cgd e 16 V DS = 30V ) a p o ( 4000 V c e 12 a Ciss u c 3000 o a - a - 8 C t C 2000 Coss a , Crss S 4 1000 G V FOR TEST CIRCUIT 0 SEE FIGURE 13 1 10
in „Suche IR 513H“ · Analoge Elektronik und Schaltungstechnik ·