––– 0.29 R θS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W R θA Junction-to-Ambient ––– 40 www.irf.com 1 5/21/08 IRFP4468PbF Static @ T =J25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 ––– ––– V V = 0V, I = 250μA (BR)DSS
0_1 4 VS COM 2 2 COM VS 4 HEATER_0_2 1 1 HEATER_1_2 4 VS COM 2 A 3 5 Q301 5 3 3 5 Q309 5 3 IN HO 4 IRF7842 4 HO IN IN HO 4 IRF7842 4 HO IN 1 0 5 0 0 0 3 0 GND PWM_0 3 2 8 Q305 8 3 2 PWM_1 GND GND PWM_0 3 2 8 Q311 8 3 2 PWM_2 GND R IRF7842 R R IRF7842 R HEATER_0_0 HEATER_0_1 HEATER_0_2 HEATER_1_2 +12V
6 +5V 9 NC HO 8 GND R11 R12 1 2 C8 11 4.7Ω 4.7Ω 6 FRQADJ/VFB2R R M C LCDDI 5 C9 C10 10 NC VB 7 R13 IRF840C25 R14 IRF840 C26 V S S D D 0.1uF10uF/16V +5V S 10uF/16V 2HO 10 10K 0.1uF/630V 10K 0.1uF/630V E L L E S N N L 11 VDD 0 VS 6 L1 3.3mH P2 F 0 1 L T C C K C13 C14 12 HIN 1 NC 5 VS2 9 L 正弦 220V 输出 7
K K V 1 ,2 , 1 , 2 , M M M 0 6 N6 N 3 N 3 N 8 OK1 + X SX S X S X S 4 HIN1 2 8 Q8 K K K K AGND 7 R4 IRF3710Z M M M M 6 N N 4,7 G G 3 5 +5V +5V ACPL-312T GND D RST OK2 N Mega 8/48/68/168 LIN1 2 8 Q3 G R10 3 X2-1 7 R1 IRF3710Z 0 C 1 PC6(/RESET) PC0(ADC0) 23 HALL_A MKDSN1,5/3-5,08 6 +5V 1 PC1(ADC1) 24 HALL_B
s V /V 400 to 1200 V DRM RRM t typical 110 µs case style q TO-209AC (TO-94) T - 40 to 125 °C J www.irf.com 1 80RIA Series Bulletin I25201 rev. B 03/03 ELECTRICALSPECIFICATIONS Voltage Ratings Voltage VDRM /V RRM , max. repetitive V RSM , maximum non- IDRM RRM max. Type number Code peak and off-state
(V) J Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLR/U120N 800 15 VGS = 0V, f = 1MHz ID = 6.0A Ciss = Cgs + Cgd , Cds SHORTED C = C ) VDS = 80V rss gd ( VDS = 50V Coss = Cds + Cgd e12 V = 20V 600 Ciss a DS F l ( o e V c c 9 a u i 400 o a -
to 1200 1400 to 1600 V DRM RRM q typical 110 μs Case Style TJ - 65 to 125 °C TO-208AA (TO-48) www.irf.com 1 25RIA Series Bulletin I2402 rev. C 05/06 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /V RRM , max. repetitive VRSM , maximum non- IDRM RRM max. Type number Code peak and off-state voltage
auf Grund ihrer Einfachheit gut zum Selbstbau. +6V / +12V D1 C1 SK15 47u/25V R2 150k R4 P6KE24CA 47k IRF4905 TS912 R3 5 150k 8 + 7 1A 1 8 +Us 3 +A1 1- 2 7 2A TS912 1 6 - 1+ 3 6 2- 2 - 4 R5 -Us 4 5 2+ 220k T1 G D S C2 IRF4905 1u/63V M BLI Der Doppel-OPV TS912, von dem nur ein System genutzt wird, arbeitet
saturation can be guaranteed. 3. Switching times are longer than those for TTL (Table 2). VH 12V 680 680 IRF320 7407 Figure 8. High Voltage TTL driver and its waveforms When C-MOS outputs are directly coupled to the gate of ® V a HEXFET , the dominant limitation to performance is IRF7307 OR IRF7507 H not the
s V /V 400 to 1600 V DRM RRM t typical 100 µs case style q TO-209AC (TO-94) TJ - 40 to 125 °C www.irf.com 1 ST110S Series Bulletin I25167 rev. C 03/03 ELECTRICALSPECIFICATIONS Voltage Ratings Voltage V /V , max. repetitive V , maximum non- I /I max. DRM RRM RSM DRM RRM Type number Code peak and off-state
OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. A SUBSTRATE. 01-6027 01-0021 11 (MS-012AA) 8-Lead SOIC 6 www.irf.com IR2184 4 ( ) (S) 01-6010 14-Lead PDIP 01-3002 03MS-001AC) 14-Lead SOIC (narrow body) 01-6019 01-3063 00S-012AB) www.irf.com 7 IR2184 4 ( ) (S) IN IN (LO) 50% 50% SD IN (HO) ton r off tf HO 90% 90%
IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE. 01-6027 8-Lead SOIC 01-0021 11 (MS-012AA) 6 www.irf.com IR2184 4 ( ) (S) 14-Lead PDIP 01-3002 03MS-001AC) 01-6019 14-Lead SOIC (narrow body) 01-3063 00S-012AB) www.irf.com 7 IR2184 4 ( ) (S) IN IN (LO) 50% 50% SD IN (HO) ton r off tf HO 90% 90% LO LO
Max. Units Maximum Junction-to-Ambient R θJA 50 °C/W Maximum Junction-to-Case R 1.09 °C/W θJC www.irf.com 1 11/21/2000 IRLR8103V Electrical Characteristics Parameter Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – V VGS= 0V, ID= 250µA Breakdown Voltage Static Drain-Source R 6.9 9.0 m V GS
Home » Halbleiter » Transistoren » FET » P - Kanal » IRF5305
IRF5305
Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube
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Allgemeiner Aufbau des Moduls Die gesamte Schaltung beschränkt sich auf zwei P- Kanal Power MOSFETs vom Typ IRF 4905 oder IRF 5305, drei kleinen Widerständen und drei Elektrolyt Kondensatoren (Elkos). Alle relevanten Bauelemente wurden stark überdimensioniert. Die MOSFETs sind 75 A Typen mit 55 V, bzw. die IRF5305
MSTBV2 i i s MSTBV2 D D Second_Supply GND VT3A VT3B E 10k R33 s 10k R55 s L K L pas 1 pashp1iz 0 G IRF8910 pas 1 pashp1iz 0 G IRF8910 A T K C C POWER_OUT_1 POWER_OUT_2 N A C S S E D R V 1 S 1 S 4 3 2 1 - - - - p 5 - - - - 0 0 0 0 s + 3 i 5 i B 5 0 5 0 5 0 0 5 X X X X X X X X s R s R B + u + u + u u +
IR2136S, +12V, zu U41(78L05), R, zu U36(78L05), S, +76V, Drain, IRFP260, Motor Wicklung, Source, Masse, Q19, Q21, D37, D44, 549, 549, 56R, 56R, 15M, 15M, 237k, 237k, R237, R238, R235, R236, 5K, 5K, 5K, High Seite Versorgung, High Fet Get, Fet Brücke Mitte, High Seite Versorgung, High Fet Get, Fet Brücke Mitte, High Seite Versorgung, High Fet Get, LOW Fet Get, LOW Fet Get, VCC, PHN1, PHN2, PHN3, PHN, EN, EN, EN, RCIN, VSS, COM, SET, LO1, LO2, LO3, VB1, HO1, VS1, HO2, VS2, VB2, HO3, VS3, VB3, HO4, VS4, ...
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