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PDF
irl2203npbf.pdf
C 60 Pulse Width ≤ 1 µs i Duty Factor ≤ 0.1 % r , D40 I Fig 10ab Switching Time Test Circuit 20 V DS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% Fig 9. Maximum Drain Current Vs. V GS td(on) r d(off)f Case Temperature Fig 103b Switching Time Waveforms 1 ) D =0.50 J t Z ( 0.20 s n p
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datasheet_MOSFET.pdf
Gate-to-Source 4.6 nC Qg(th) Gate Charge at Vth 3.4 nC Q Output Charge V = 30 V, V = 0 V 25 nC oss DS GS d(on) Turn On Delay Time 6 ns r Rise Time 15 ns VDS = 30 V, GS = 10 V, DS= 8 A, RG= 0 Ω d(off) Turn Off Delay Time 5 ns t Fall Time 19 ns ƒ DIODE CHARACTERISTICS VSD Diode Forward Voltage SD = 8 A
in „DRV8711 Steppermotortreiber - Hohe Geschwindigkeiten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LD7536R.pdf
Frequencyvs. Vcc Fig. 5 Frequency vs. Vcc 7 Leadtrend Technology Corporation www.leadtrend.com.tw LD7536R-DS-01a December 2011 LD7536R 85 0.90 80 0.88 ) ) ( 75 ( 0.86 t ) u o x (S a 70 C0.84 M V 65 0.82 60 0.80 -40 0 40 80 120 125 -40 0 40 80 120 125 Temperature (°C) Temperature (°C) Fig. 7 Max Duty vs. Temperature
in „DENON DN-508MX Netzteil defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ds1990a.pdf
DS1990A (Notes 3, 4, and 5) 100 800 pF IO DS1990AA (Notes 4 and 5) 1000 pF Input Load Current I DS1990A (Note 6) 0.25 µA L DS1990AA IO pin at V PUP (Note 6) 0.05 1.75 6.7 µA Input Low Voltage VIL (Notes 1 and 7) 0.3 V VIH DS1990A (Notes 4 and 8) 2.2 Input High Voltage DS1990AA (Notes 4 and 8) 0.75 x V VPUP Output Low Voltage V OL IOL = 4mA 0.4 V DS1990A (Note 1) 1 µs Recovery Time tREC DS1990AA (Note 1) 5 µs DS1990A (Note
in „V 30 iButton DS1990A“ · Markt ·
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PDF
IPD053N06N_Infineon.pdf
Gate-source leakage current IGSS VGS =20 V, VDS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) VGS =10 V, ID=45 A - 4.5 5.3 mW VGS =6 V, D =12 A - 6.0 8.0 Gate resistance R G - 1.5 2.3 W |VDS|>2|ID|RDS(on)max Transconductance g fs I =45 A 38 75 - S D Rev.2.2 page 2 2012-12-20 IPD053N06N Parameter
in „12V mit Logic Mosfet schalten - funktioniert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004.pdf
n e u 80 4.5V C i Duty Factor ≤ 0.1 % r 60 D , I 40 Fig 10a. Switching Time Test Circuit 20 V DS 90% 025 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% V GS Fig 9. Maximum Drain Current Vs. td(on) tr td(off)f CaseTemperature Fig 10b. Switching Time Waveforms 1 ) J D = 0.50 t Z ( e 0.20 n
in „Mosfet als Schalter 100W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF830.pdf
VDS = VGS ID= 250 A 2 3 4 V Voltage R Static Drain-source On V = 10V I = 2.7 A 1.35 1.5 DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) RDS(on)max 4.5 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (∗) Forward V > I x R I = 2.7 A 2.5 S fs DS D(on) DS(on)max D Transconductance C Input Capacitance V = 25 V f = 1 MHz V = 0 610 pF iss DS GS Coss Output Capacitance 120 pF Crss Reverse Transfer 10 pF Capacitance 2/8 IRF830 ELECTRICAL CHARACTERISTICS (continued
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PDF
DMG1024UV.pdf
0.3 0.45 VGS = 4.5V, D = 600mA T 0.4 0.6 VGS = 2.5V, D = 500mA C Static Drain-Source On-Resistance R DS (ON) - 0.5 0.75 Ω VGS = 1.8V, D = 350mA U - 9 VGS = 1.7V, D = 140mA D - 10 VGS = 1.5V, D = 100mA O Forward Transfer Admittance |Yfs - 1.4 - S VDS = 10V, D = 400mA R Diode Forward Voltage 0.7 1.2 V P
in „MOSFET Ersatztypen für DMG1024 u. DMG1023 gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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1-buz171.pdf
Transconductance gfs S V ≥2 I R I = -5 A 1.5 2.3 - DS * D * DS(on)max, D Input capacitance C iss pF V GS= 0 V, DS = -25 V, f = 1 MHz - 750 1000 Output capacitance C oss V = 0 V, V = -25 V, f = 1 MHz - 270 400 GS DS Reverse transfer capacitance C rss V GS
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
A200_MCP1407-EP_MIC.pdf
protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057 DS22019A-page 16 © 2006 Microchip Technology Inc. MCP1406/07 APPENDIX A: REVISION HISTORY Revision A (December 2006) • Original Release of this Document. © 2006 Microchip Technology Inc. DS22019A-page 17
in „Treiber für IRF1404 ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
Gate threshold voltage V GS(th) V GS=VDS, D= 1 mA 2.1 3 4 Zero gate voltage drain current IDSS µA V DS= 100 V, VGS= 0 V, j = 25 °C - 0.1 1 V DS= 100 V, VGS= 0 V, j = 125 °C - 10 100 Gate-source leakage current IGSS nA V GS = 20 V, DS= 0 V - 10 100 Drain-Source on-resistance R DS(on) V GS = 10 V,DI = 6
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Allegro_Stromsensor_0755-050.pdf
last two digits) WW Manufacturing date code: Calendar week 8 115NortheastCutoff,Box15036 ACS755050-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS755xCB-050 Package CB-PFF 9 115NortheastCutoff,Box15036 ACS755050-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000
in „Strommessung an 230V AC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUZ11-FSC.PDF
VGS(TH) VGS = VDS DI = 1mA (Figure 9) 2.1 3 4 V o Zero Gate Voltage Drain Current IDSS TJ= 25 C, V DS = 50V, GS = 0V - 20 250 µA T = 125 C, V = 50V, V = 0V - 100 1000 µA J DS GS Gate to Source Leakage Current I V = 20V, V = 0V - 10 100 nA GSS GS DS Drain to Source On Resistance (Note 2) r I = 15A, V
in „BUZ11 parallel als regelbarer 200 Watt Widerstand bis 20V 10A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM710.PDF
Characteristics Transfer Function Voltage Gain Voltage Gain DS010410-10 DS010410-11 DS010410-12 Input Bias Current Input Offset Current Supply Current DS010410-13 DS010410-14 DS010410-15 Response Time for Response Time for Common Mode Pulse Various Input Overdrives Various Input Overdrives Response DS010410-18 DS010410-16 DS010410-17 5 www.national.com PrintDate=1997/05/16 PrintTime=10:46:12 7730 ds010410 Rev. No. 1 Proof 5 Typical Performance Characteristics (Continued) Output Voltage Level Output
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Datei
serielle_Schnittstelle_EPROM_80C31.asm
Schnittstelle: 9600 Baud, no parity, 8 Bit, 1 Stopbit, (keine Handshakes) Basic: {OPEN "COM1:9600,N,8,1,CS,DS,CD" AS#1} mit WR/STROBE Adres- Da- Mnemonik: Kommentar: sen: ten: -------------------------------------------------------------------- 00 00 ]------ NOP Keine Operation 01 75 ]-START MOV SCON,#50Hex
in „Unsauberes UART Signal“ · Mikrocontroller und Digitale Elektronik ·
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625945.pdf
Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = ±25 V, V = 0 V ⎯ ⎯ ±10 μA GSS GS DS Gate-source breakdown voltage V I = ±10 μA, V = 0 V ±30 ⎯ ⎯ V (BR) GSS G DS Drain cut-off current I V = 600 V, V = 0 V ⎯ ⎯ 100 μA DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 ⎯ ⎯
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfp260n.pdf
28A Ciss= Cgs+ Cgd Cds SHORTED V VDS = 160V 7000 C = C ( VDS = 100V rss gd g VDS = 40V 6000 Coss = ds + gd l 12 F o ( Ciss V c5000 c a u c4000 S 8 p o a Coss - ,3000 t C G 2000 , 4 Crss S V 1000 0 0 0 50 100 150 200 1 10 100 1000 Q , Total Gate Charge (nC) V , Drain-to-Source Voltage (V) G DS Fig 5.
in „Strom bei 50 A begrenzen“ · Analoge Elektronik und Schaltungstechnik ·
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irlml6344pbf.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FDC6327C.pdf
are • N-Channel 2.7A, 20V. R = 0.08Ω @ V = 4.5V produced using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored RDS(on)= 0.12Ω @ V GS = 2.5V to minimize on-state resistance and yet maintain low gat• P-Channel -1.6A, -20V.DS(on) 0.17Ω @ V GS = -4.5V charge
in „Port-Stromverstärkung,Push-Pull-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl630.pdf
On-Resistance GS D ––– ––– 0.50 V GS= 4.0V, D = 4.5A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS ,DI = 250µA gfs Forward Transconductance 4.8 ––– ––– S V DS= 50V, D = 5.4A DSS Drain-to-Source Leakage Current ––– ––– 25 µA V DS= 200V, VGS = 0V ––– ––– 250 V DS= 160V, VGS = 0V, J = 125°C GSS
in „Kontrolle der Kühlkörperberechnung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
umrech.txt
------------------------------------------- Scanning-Bus-for-DS18X20 2-DS18X20-Sensor(s)-available: #-in-Bus-:1-:-FC:10-(18S)SN:-8C-79-0B-02-08-00-CRC:5F--CRC-O.K.- #-in-Bus-:2-:-FC:10-(18S)SN:-E0-76-0B-02-08-00-CRC:8E--CRC-O.K.- Sensor#-1-is-a-DS18S20/DS1820-which-is-parasite-powered Sensor#-2-is-a-DS18S20/DS1820-which-is-parasite-powered DS18x20-EEPROM-support-test-for-first-sensor TH/TL-in-scratchpad-of-sensor-1-now-:-91-/-86 TH+1-and-TL+1-written-to-scratchpad TH/TL-in-scratchpad-of-sensor-1-now
in „DS18S20 - extended resolution bei Temperaturen um 0°C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP1700.pdf
, “A Method to Determine How Much Power a SOT23 Can Dissipate in an Application” (DS00792), Microchip Technology Inc., 2001 GND V IN VOUT * Includes Exposed Thermal Pad (EP); see Table 3-1. 2005-2016 Microchip Technology Inc. DS20001826D-page 1 MCP1700 Functional Block Diagrams MCP1700
in „ESP-01 mit LiPo betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
WIDTH Tj = 150°C Tj = 25°C 0.01 0.01 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 100.0 ID= -4.3A c a Α TJ= 25°C i ( s n R 1.5 r T J 150°C n u 10.0 O d C e e r r zl u o
in „3,3 V schalten mit möglichgst geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO4459.pdf
Drain-Source Breakdown Voltage ID=-250 A, V GSV -30 V V =-30V, V =0V -1 IDSS Zero Gate Voltage Drain Current DS GS A TJ=55°C -5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V ±100 nA V Gate Threshold Voltage V =V I =-250 A -1 -1.5 -2.5 V GS(th) DS GS D ID(ON) On state drain current V GS10V, V =DSV -30 A V GS10V, I =D6.5A 33 42 m R DS(ON) Static Drain-Source On-Resistance V GS=-4.5V, D =-5A 56 60 m gFS Forward Transconductance V DS=-5V, D =-6.5A 14 S V Diode Forward Voltage IS=-1A,V GSV -0.8 -1 V SD IS Maximum Body-Diode Continuous
in „P-Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si9934bdy.pdf
, D = −250 mA −0.6 −1.4 V Gate-Body Leakage IGSS VDS= 0 V, GS = "8 V "100 nA V = −12 V, V = 0 V −1 DS GS Zero Gate Voltage Drain Current DSS V = −12 V, V = 0 V, T = 55_C −5 mA DS GS J On-State Drain Current I V = −5 V, V = −4.5 V −20 A D(on) DS GS V = −4.5 V, I = −6.4 A 0.028 0.035 Drain-Source On-State
in „P-MOS Vgs positiv?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18b20.c
/*! * \file ds18b20.c * \brief DS18B20 Temperatursensor lesen/schreiben * \author Joerg S. * \date 1.2007 */ #include "ds18b20.h" ////////////////////////////////////////////////////////////////////////////////////
in „Wer hat DS18x20 an MSP430 am laufen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mc14553b-d-1192980.pdf
10 LE Q3 5 Parameter Symbol Value Unit O.F. 14 DC Supply Voltage Range V DD −0.5 to +18.0 V 11 DIS DS1 2 Input or Output Voltage Range Vin −0.5 to DD V DS2 1 (DC or Transient) V out + 0.5 13 MR DS3 15 Input Current (DC or Transient) per Pin Iin ±10 mA V DD= PIN 16 Output Current (DC or Transient) per
in „MC14553BCP - Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
GU256X16-333A_1.pdf
DIP Switch(S0-S4). The display accept data or command writing, when *CS is "0" and address line ( DS0-DS3) is equal to DIP Switch setting (S0~S3). 5 9 Functions (Cont’d) The relationship between DS0-DS3 and S0-S3 is as follows. Setting of DIP Switch Device Select Signal Module Address S3 S2 S1 S0 DS3 DS2 DS1 DS0 OFF OFF OFF OFF 1 1 1 1 #0 OFF OFF OFF ON 1 1 1 0 #1 OFF OFF ON OFF 1 1 0 1 #2 OFF OFF ON ON 1 1 0 0 #3 OFF ON OFF OFF 1 0 1 1 #4 OFF ON OFF ON 1 0 1 0 #5 OFF ON ON OFF 1 0 0 1 #6 OFF ON ON
in „[V] Riesiges VFD Grafikdisplay mit 256x16 Pixeln von Noritake“ · Markt ·
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PDF
GU256X16-333A_1.pdf
DIP Switch(S0-S4). The display accept data or command writing, when *CS is "0" and address line ( DS0-DS3) is equal to DIP Switch setting (S0~S3). 5 9 Functions (Cont’d) The relationship between DS0-DS3 and S0-S3 is as follows. Setting of DIP Switch Device Select Signal Module Address S3 S2 S1 S0 DS3 DS2 DS1 DS0 OFF OFF OFF OFF 1 1 1 1 #0 OFF OFF OFF ON 1 1 1 0 #1 OFF OFF ON OFF 1 1 0 1 #2 OFF OFF ON ON 1 1 0 0 #3 OFF ON OFF OFF 1 0 1 1 #4 OFF ON OFF ON 1 0 1 0 #5 OFF ON ON OFF 1 0 0 1 #6 OFF ON ON
in „{V] Verkaufe MEGA VFD Grafikdisplay von Noritake“ · Markt ·
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PDF
LM2574.pdf
DS011394-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011394-33 DS011394-35 DS011394-34 Minimum Operating Voltage Supply Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011394-36
in „Ersatz für 7805 gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2574.pdf
DS011394-32 Oscillator Frequency Switch Saturation Efficiency Voltage DS011394-33 DS011394-35 DS011394-34 Minimum Operating Voltage Supply Current Feedback Voltage vs Duty Cycle vs Duty Cycle DS011394-36
in „Iverting Buck Boost -5V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MRF175GV.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain–Source On–Voltage (GS = 10 V,DI = 5.0 A) V DS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (DS = 10 V,DI = 2.5 A) gfs 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS (1) Input Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) C iss — 180 — pF Output Capacitance (V = 28 V, V = 0, f = 1.0 MHz) C — 200 — pF DS GS oss Reverse Transfer Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) C rss — 20 — pF FUNCTIONAL
in „Dimensionierung eines Kühlkörpers für HF-Modul“ · HF, Funk und Felder ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2sk3115.pdf
s a0.1 r - ( 0.01 r 10 100 1 m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13338EJ2V0DS 3 2SK3115 DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE Pulsed 25 100 Tch= 125˚C - VGS = 10 V - 75˚C t 20 t e 8 V e 10 u u C 15 C i 6 V i Tch= 25˚C r r 1.0 −25˚C D 10 D D
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DMG1023UV.pdf
C IDSS - - -100 nA VDS = -20V, VGS = 0V Gate-Source Leakage I - - ±2.0 μA V = ±4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.5 - -1.0 V VDS = VGS ,DI = -250μA 0.5 0.75 VGS = -4.5V, D = -430mA 0.7 1.05 VGS = -2.5V, D = -300mA Static Drain-Source On-Resistance - 1.0
in „MOSFET Ersatztypen für DMG1024 u. DMG1023 gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1.5KE6V8A.PDF
58.90 65.10 1.0 5.0 85.0 17.7 0.104 1.5KE68A 1.5KE68CA 58.10 64.60 71.40 1.0 5.0 92.0 16.3 0.104 1.5KE75A 1.5KE75CA 64.10 71.30 78.80 1.0 5.0 103.0 14.6 0.105 1.5KE82A 1.5KE82CA 70.10 77.90 86.10 1.0 5.0 113.0 13.3 0.105 1.5KE91A 1.5KE91CA 77.80 86.50 95.50 1.0 5.0 125.0 12.0 0.106 1.5KE100A 1.5KE100CA
in „Welches Bauteil (Diode?) ist das?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FB180SA10P.pdf
0.093 - V/°C coefficient Static drain to source on-resistance R (1) V = 10 V, I = 180 A - 0.0065 - DS(on) GS D Gate threshold voltage V GS(th) V DS = VGS, D = 250 μA 2.0 - 4.0 V Forward transconductance gfs V DS = 25 V, D = 180 A 93 - - S V DS = 100 V, VGS = 0 V - - 50 Drain to source leakage current
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
670135-DS01-1.pdf
Threshold Voltage VGS(TH) V GS = VDS DI = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current DSS V DS = Rated BVDSS , GS = 0V - - 25 µA V = 0.8 x Rated BV , V = 0V, T = 125 C - - 250 µA DS DSS GS J On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , VGS = 10V 14 - - A Gate to Source Leakage
in „Suche IRFP 450B“ · Markt ·
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PDF
Si4838DY.pdf
V On-State Drain Current D(on) DS GS 30 A V = 4.5 V, I = 25 A 0.0024 0.003 Drain-Source On-State Resistance a R DS(on) GS D Ω V GS = 2.5 V,DI = 20 A 0.0031 0.004 Forward Transconductance a g fs V DS = 6 V,DI = 25 A 80 S Diode Forward Voltage a VSD S = 2.9 A, VGS = 0 V 0.75 1.1 V Dynamic b Total Gate Charge Q g 40 60 Q V = 6 V, V = 4.5 V, I = 25 A Gate-Source Charge gs DS GS D 6.7 nC Gate-Drain Charge Q 9.2 gd Gate Resistance R g 1.0 1.7 2.9 Ω Turn-On Delay Time td(on)
in „Verpolungsschutz Mosfet dimensionieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
H21A2.pdf
=100µs,PRR=100pps A M O , A ( C V 1 C 1.8mA I = 30mA F 0.8 IC 0.9mA I = 15mA F 0.6 -50 -25 0 25 50 75 100 TA,AMBIENTTEMPERATURE(°C) DS300290 5/02/01 3 OF 5 www.fairchildsemi.com H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH Figure 4. Leakage Current vs. Temperature DETECTOR EMITTER
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PDF
FDB8832_Logic__N__Temp_ok_.pdf
Source Breakdown Voltage ID= 250µA, VGS = 0V 30 - - V - - 1 DSS Zero Gate Voltage Drain Current V DS= 24V µA V GS= 0V TJ= 150°C - - 250 I Gate to Source Leakage Current V = ±20V - - ±100 nA GSS GS On Characteristics VGS(th) Gate to Source Threshold Voltage V DS= VGS, D = 250µA 1.0 1.6 3.0 V I = 80A,
in „Mini-heizung“ · Mikrocontroller und Digitale Elektronik ·
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irf7389.pdf
5.8A gfs ForwardTransconductance P-Ch 7.7 S V = -15V, I = -4.9A DS D N-Ch 1.0 VDS = 24V, GS = 0V I Drain-to-Source Leakage Current P-Ch -1.0 VDS = -24V, GS= 0V DSS N-Ch 25V µA DS = 24V, GS = 0V, J = 55°C P-Ch -25V = -24V, V = 0V, T = 55°C DS GS J IGSS Gate-to-SourceForwardLeakage
in „Treiber für Push-Pull 12V?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
5.8A gfs ForwardTransconductance P-Ch 7.7 S V = -15V, I = -4.9A DS D N-Ch 1.0 VDS = 24V, GS = 0V I Drain-to-Source Leakage Current P-Ch -1.0 VDS = -24V, GS= 0V DSS N-Ch 25V µA DS = 24V, GS = 0V, J = 55°C P-Ch -25V = -24V, V = 0V, T = 55°C DS GS J IGSS Gate-to-SourceForwardLeakage
in „Brushless DC Motorsteureung Dysfunktion AVR444“ · Analoge Elektronik und Schaltungstechnik ·
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irf740pbf.pdf
Forward Voltage 20 I = 10 A 103 ) D 5 ( VDS = 320 V Operation in this area limited e 16 2 by R a ) 2 DS(on) l V DS= 200 V ( 10 V t 5 e 12 V DS= 80 V e 10 µs r r 2 o C 10 - n 100 µs t 8 a 5 e D 2 1 ms a , G I 1 10 ms ,S 4 5 G TC= 25 °C V For test circuit 2 TJ= 150 °C see figure 13 Single Pulse 0 0.1 2 5
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·