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PDF
FB180SA10P.pdf
transconductance gfs V DS = 25 V, D = 180 A 93 - - S V DS = 100 V, VGS = 0 V - - 50 Drain to source leakage current IDSS μA V DS = 80 V, VGS= 0 V, TJ= 125 °C - - 500 V GS = 20 V - - 200 Gate to source forward leakage IGSS V =
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MCP73837.pdf
°C. Typical values are at +25= [VV (typical) + 1.0V] A DD REG Parameters Sym Min Typ Max Units Conditions USB-Port Fast Charge Current REG 80 90 100 mA PROG2 = Low 400 450 500 mA PROG2 = High TA=-5°C to
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PDF
NTMFS4C09N.pdf
2) TA= 80°C 6.8 D Power Dissipation TA= 25°C P D 0.76 W A = Assembly Location RqJA(Note 2) Y = Year Continuous Drain T = 25°C I 52 A C D W = Work Week Current qJC T =80°C 39 ZZ = Lot Traceabililty (Note 1) C Power
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NHD-0420CW-AY3-587980.pdf
Rise Time - - 15 ns t Fall Time - - 15 ns F [14] Serial Interface: Symbol Parameter Min Typ Max Unit tC Serial Clock Cycle Time 1 - 20 µs t , t Serial clock rise/fall time - - 15 ns R F tW Serial clock width (high, low) 400 - - ns tsu1 Chip select setup time 60 - - ns t Chip select hold time 20 - - ns
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PDF
BUK100-50GL_1.pdf
= 25 ˚C. Fig.12. Typical overload protection characteristics. D = f(V IS; conditions: V DS = 10 V; t =p250 s td sc f(P DS conditions: V ≥ 4 IS T = 25 ˚C.j gfs / S BUK100-50GL PDSM% 12 120 11 10 9 100 8 7 80
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Datei
0217b-DS10-SD-sektor_auslesen-als_antwort_senden.c
********************************************* #include <MSP430x16x.h> // für MSP430F1611 #include "DS10-iar-0206-SD_MAINTI.c" #include "DS10-iar-LMK62-SD.h" #include "DS10-iar-DS32C35.h" //#include "DS10-iar_DS18B20_Nr29_30_31_32_33_34.h" #include "DS10-iar-0206-SD_karte.h" #include <signal.h> #include
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21483b.pdf
frequency set point is determined by adjusting the voltage at this pin. 2002 Microchip Technology Inc. DS21483B-page 9 TC9400/9401/9402 5.0 VOLTAGE-TO-FREQUENCY FIGURE 5-1: RECOMMENDED C REF VS. V REF (V/F) CONVERTER DESIGN INFORMATION 500 V DD = +5V R SS= 1MΩ 5.1 Input/Output Relationships 400 V IN= +10V
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24C64.pdf
24AA64/24LC64 2 ™ 64K I C CMOS Serial EEPROM DEVICE SELECTION TABLE PACKAGE TYPE 8-LEAD PDIP Part Vcc Max Clock Temp Number Range Frequency Ranges A0 1 8 Vcc 24AA64 1.8-5.5V 400 kHz † C A1 2 4 7 WP x 24LC64 2.5-5.5V 400 kHz I
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PDF
DS1337.pdf
INFORMATION APPLICATIONS PART TEMP RANGE PIN-PACKAGE TOP MARK Handhelds (GPS, POS Terminal, MP3 Player) DS1337 -40°C to +85°C 8 DIP (300 milDS1337 Consumer Electronics (Set-Top Box, VCR/Digital Recording) DS1337S -40°C to +85°C 8 SO (150 mil)DS1337 Office Equipment (Fax/Printer, Copier) DS1337U -40°C to +
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LTC3824fg.pdf
CC Switching Frequency vs R SET ΔV REF vs Temperature 0.4 700 5 600 4 0.2 3 z500 V ( V ( Y ( 2 E 0 N400 E VR U V 1 Δ E ∆ F300 –0.2 0 200 –1 –0.4 100 –2 0 10 20 30 40 50 60 100 200 300 400 –75 –50 –25 0 25 50 75 100 125 150 V CC(V) R SETkΩ) DIE TEMPERATURE (°C) 3824 G04 3824 G05 3824 G06 3824fg 4 LTC3824
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PDF
CPC1981Y.pdf
4.5 1200 F 0.06 )4.0 ) ) A3.5 P1000 m0.05 ( ( ( I =20mA n3.0 m 800 m0.04 F e2.5 T T u n 600 f0.03 C2.0 - I = 20mA - I=10mA D1.5 r 400 F r0.02 F L T T 1.0 200 0.01 0.5 0 0 0 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 -40 -20 0 20 40 60 80 100 Temperature (ºC) Temperature (ºC) Temperature (ºC
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PDF
Infineon-IRLIB9343-DS-v01_02-EN.pdf
1.0 r (1.0 a D D ) , n -D V = -25V ( DS D 60µs PULSE WIDTH R 0.1 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 5.0 10.0 15.0 T , Junction Temperature (°C) -V GS , Gate-to-Source Voltage (V) J Fig. 4 Normalized On-Resistance vs. Temperature Fig. 3 Typical Transfer Characteristics 10000 20 VGS = 0V, f = 1 MHZ D = -14A C iss= Cgs + Cgd, CdsSHORTED ) V = -44V C = C ( DS rss gd g 16 VDS= -28V C oss = ds + Cgd t VDS= -11V F o ( 1000 V e Ciss c 12 n u i S a Coss o a - 8 C Crss a C 100 G ,S G 4 - FOR TEST CIRCUIT SEE FIGURE
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IRF7822.pdf
S GS Voltage* Reverse Recovery Q rr 120 nC di/dt ~ 700A/µs ChargeT V = 16V, V = 0V, I = 15A DS GS S Reverse Recovery Q 108 nC di/dt = 700A/µs rr(s) Charge (with Parallel (with 10BQ040) Schottky)T V DS= 16V, VGS = 0V, S = 15A Notes: Q Repetitive
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PDF
IRFI4212H-117.pdf
Characteristics Fig 2. Typical Output Characteristics 100 2.5 e D = 6.6A n ) s VGS = 10V ( s t R 2.0 e n u 10 O C T = 150°C c d c J u z u o a 1.5 o o r o TJ= 25°C - o - a ( a 1 r D , 1.0 , n ID V = 50V ( DS S ≤60µs PULSE WIDTH RD 0.1 0.5 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) GS Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 10000 12.0 VGS = 0V, f = 1 MHZ C = C + C , C SHORTED ID= 6.6A iss gs gd ds Crss = Cgd V 10.0 V DS= 80V Coss
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PDF
dds_ds558.pdf
cause of the spectral artifacts. Figure 3 provides an exploded view of the spectral plot in Figure 2 (c). X-Ref Target - Figure 2 1 (a) 0.5 0 0 20 40 60 80 100 1 (b) 0 -10 20 40 60 80 100 0 (c) -50 B D-100 0 0.1 0.2 0.3 0.4 0.5 FREQUENCY Figure 2: Phase Truncation DDS. f out = 0.022Hz, Table Depth = 256
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DS_K4B8G1646Q-MY_Rev10.pdf
DQS tQH 0.38 - 0.38 - 0.38 - 0.38 - tCK(avg) 13, g DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 -450 225 ps 13,14, f DQ high-impedance time from CK, CK tHZ(DQ) - 400 - 300 - 250 - 225 ps 13,14, f 1.35V tDS(base) AC160 90 - 40 - - - - - ps d,17,33 tDS(base) 140 - 90 - 45 - 25
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PDF
LT3756.pdf
SS SENSE RT PWMOUT 0.033Ω LED 80 0.01μF VC GND INTVCC STRING 0 20 40 60 80 VIN(V) 28.7k C2 400kHz 30k 4.7μF 37561 TA04b 10k 10V 0.001μF M2 3756 TA04a L1: COILCRAFT MSD1278T-333 M1: VISHAY SILICONIX Si7430DP D1: ON SEMICONDUCTOR MBRS3200T
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24fc256.pdf
Leakage Current — ±1 µA VIN= VSS or CC, WP = VCC D6 LO Output Leakage Current — ±1 µA VOUT = VSSor VCC C I, Pin Capacitance VCC = 5.0V (Note 1) D7 — 10 pF COUT (all inputs/outputs) TA= +25°C, FCLK= 1 MHz D8 ICCRead — 400 µA VCC = 5.5V, SCL = 400 kHz Operating Current D9 ICC Write — 3 mA VCC = 5.5V — 1 µA
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PDF
MC_product_selection_AN.pdf
battery chemistries for portable applications Low SLA 2-8 2.5-25 50-500 <15C -20-+50 Low and fully integrated low cost single-cell Lithium-Ion/ Lithium Polymer battery charge management NiCd 15-20 3.5-3001500 <10C -20-+60 Low solutions. 20-25 10-400 800 <3C 0-+60 Med References
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PDF
BSN10.pdf
transistors handbook, halfpage MRA782 MRA783 500 handbook, halfpage 500 VGS = 10 V ID I (mA) D 7 V 400 (mA) 400 5 V 300 300 4 V 200 200 3 V 100 100 2.5 V 0 0 0 4 8 V (V) 12 0 2 4 6 8 10 DS VGS (V) Tj= 25 °C. VDS= 10 V; j = 25 °C. Fig.4 Typical output characteristics. Fig.5 Typical transfer characteristics
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lm2731.pdf
(continued) Unless otherwise specified: V = 5 IN SHDN pin tied to V . IN 100 100 90 90 80 80 70 % 70 ) ( ( 60 C 60 Y N C 50 I 50 I F I 40 F 40 F E E 30 30 20 20 10 10 0 0 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 LOAD (mA) LOAD (mA) VIN = 2.7 V VOUT = 5 V VIN = 4.2 V VOUT
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (8€)“ · Markt ·
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PDF
lm2731.pdf
(continued) Unless otherwise specified: V = 5 IN SHDN pin tied to V . IN 100 100 90 90 80 80 70 % 70 ) ( ( 60 C 60 Y N C 50 I 50 I F I 40 F 40 F E E 30 30 20 20 10 10 0 0 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 LOAD (mA) LOAD (mA) VIN = 2.7 V VOUT = 5 V VIN = 4.2 V VOUT
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (15€)“ · Markt ·
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PDF
MCP73811_2.pdf
BAT ) vs. Ambient Temperature (T ). A Supply Voltage (V DD ). ) 0.40 516 A RPROG= 2 kΩ t 0.35 +85°C A 514 n 0.30 m 512 r t u 0.25 -40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP_73831.pdf
BAT ) vs. Ambient Temperature (T ). A Supply Voltage (V DD ). ) 0.40 516 A RPROG= 2 kΩ t 0.35 +85°C A 514 n 0.30 m 512 r t u 0.25 -40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLN540.pdf
ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 V DS, Drain-to-SourceVoltage(V) Q G Total GateCharge(nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA
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PDF
IRL540N.pdf
ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20 40 60 80 100 V DS, Drain-to-SourceVoltage(V) Q G Total GateCharge(nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1331276981-613264.pdf
20 50 80 110 140 Temperature(℃) e Temperature℃ ) Ivdd_startup vs Temperature i d 10 f VcsVSVmult ) 8 n 1.6 ( 6 o 1.2 a 4 C c.8 I 2 t 0.4 0 -40 -10 20h 50 80 110 140 0.0 g 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r i Temperature
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PDF
lm35_Temp.pdf
1 mA load n with improved accuracy). The LM35 series is available pack- s o Typical Applications s DS005516-4 DS005516-3 Choose R1= −VS/50 µA FIGURE 1. Basic Centigrade Temperature Sensor V OUT=+1,500 mV at +150˚C (+2˚C to +150˚C) = +250 mV at +25˚C = −550 mV at −55˚C FIGURE 2. Full-Range Centigrade
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP4151.pdf
INL 125C INL -40C INL25C INL 85C INL 125C INL ) -40C DNL 25C DNL 85C DNL 125C DNL 0.2 ) -40C DNL25C DNL 85C DNL 125C DNL RW 100 R 100 0.75 e DNL INL e INL c 0.1 b c b a s80 S a s80 0.25 S i m 0 ( i m ( s o o
in „Frage zum MCP4151 SPI Digital Poti?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pnFET_Si1551.pdf
N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
top222y.pdf
5Voutputwindingisrectifiedby for the main supply and are not shown. The input DC rail may D2 and filtered by C2, L1 and C3. C 6 12/97 TOP221-227 D2 L1 MUR420 3.3 µH +12V VR1 C2 C3 P6KE200 330 F 220 F 35 V 35 V RTN BR1 D1 L2 400 V BYV26C D3 22 mH 1N4148 R1 C1 100 47 F 400 V U1 C4 C6 TOP224P 0.1 F R2 0.1 F D 220
in „Suche Ersatz für TOP222Y“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BAT54.pdf
M 0.85 0.80 a 0° 8° · Ordering Information: See Page 3 All Dimensions in mm BAT54 Marking: KL1 BAT54A Marking: KL2 BAT54C Marking: KL3 BAT54S Marking: KL4 Maximum Ratings @ T A 25°C unless otherwise specified Characteristic
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PDF
DS1337-DS1337C.pdf
mils) DS1337 DS1337U -40°C to +85°C 8 µSOP 1337 DS1337U+ -40°C to +85°C 8 µSOP 1337 DS1337C -40°C to +85°C 16 SO (300 mils)DS1337C DS1337C# -40°C to +85°C 16 SO (300 mils)DS1337C + Denotes a lead-free/RoHS-compliant
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PDF
2sk3115.pdf
≤ 1% Starting ch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA RL PG. 50 VDD 2 Data Sheet D13338EJ2V0DS 2SK3115 ★ TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE 100 80 % - W e - w 80 n o t 60 P a t s a 60 i R D o r 40
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP738312.pdf
Ambient Temperature (T ). Supply Voltage (V ). BAT A DD ) 0.40 516 µ ) 514 RPROG= 2 kΩ t 0.35 +85°C A e 0.30 ( 512 r -40°C n 510 C 0.25 e e 0.20 u 508 a +25°C C a 0.15 g 506 L a 504 t 0.10 h t 0.05 C 502 u 500 O 0.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.50 4.75 5.00 5.25 5.50 5.75 6.00 Battery Regulation
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IOR__IRFR6215.pdf
Characteristics Fig 2. Typical Output Characteristics 100 2.5 e ID = -11A n ) t ( i t s 2.0 n R r n u TJ= 25°C O C e ) e r d 1.5 r TJ= 175°C u i u 10 o a o - m - - o 1.0 t i N n r ( a D r , , n 0.5 D ( - S V DS = -50V D R VGS = -10V 1 20µs PULSE WIDTH 0.0 A 4 5 6 7 8 9 10 A -60 -40 -20 0 20 40 60 80 100 120 140
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PDF
Mosfet_-_ti_-_csd19536kcs_TO220.pdf
SLPS485B –JANUARY 2014–REVISED OCTOBER 2014 www.ti.com 5.3 Typical MOSFET Characteristics (T = 25°C unless otherwise stated) A Figure 1. Transient Thermal Impedance 200 200 ) 180 ) 180 VDS= 5V ( ( n 160 t 160 e e u 140 u 140 C C c 120 c 120 u u S 100 o 100 o 80 o 80 - - a 60 a 60 D r - 40 VGS=10V -
in „MOSFET CSD19536KCS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2sk1402.pdf
50 100 150 1 3 10 30 100 300 1,000 Case Temperature T (°C) Drain to Source Voltage V (V) C DS Typical Output Characteristics Typical Transfer Characteristics 5 5 10 V 6 V V = 20 V 5 V Pulse Test DS Pulse Test 4 4 ) ) ( ( D I 3 4.5 V ID 3 t t e n r r u u C 2 C 2 i i TC= –25°C r r 25°C D D 1 4 V 1 75°C VGS = 3.5 V 0 10 20 30 40 50 0 2 4 6 8 10 Drain to Source Voltage DS (V) Gate to Source Voltage GS (V) 4 2SK1402, 2SK1402A Drain to Source Saturation Voltage
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
of leads Holding Holding Inertia Torque Torque ‘L’ ‘ Ds ’ mm Mm Kg Ncm Ncm Kgcm 2 23HSX-102 41 6.35 8 0.5 37 47 0.077 23HSX-202 55 6.35 8 0.7 75 98 0.22 23HSX-206 23HSX-306 78.5 8.0 8 1.0 125 163 0.34 Electrical Specification : Uni-polaroperation Bi-polar
in „Schrittmotor -> Schrittmotorsteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lg_flatron_l1800p_lb886f_ch_cl-29.pdf
D3SBA60BKSHINDENGEN 600V C22 0CH3105F946 1UF16VZF2012R/TP D901 0DD400709CB UF4007 TPG.IDO204AL1000V C23 0CE107WF6DC 100UFMVK16V20%R/TP(SMD) D902 0DR400409AB UF4004TPG.IDO204AL400V1 C24 0CE477EF638 470UFKMG16VMFM5TP5 D907 0DS113309AA
in „Überspannung in Mehrparteien-Wohunung. Baustrom, oder Kabel angebohrt?“ · Haus & Smart Home ·
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PDF
Disketten_Info.pdf
Laufwerken sind meist nur die Laufwerksauswahleingänge DS0 und DS1 angeschaltet (Leitungen 10, 12); die Auswahlsignale DS2, 3 (Leitungen 14, 6) werden nicht ausgewertet. Abb. 1.7 Die Anschlüsse an marktüblichen Laufwerken (Beispiele; Ansicht von hinten in normaler
in „Floppy FDD Diskette an AVR Mikrocontroller ATmega Beispiele Assembler“ · Projekte & Code ·
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PDF
70044.pdf
. VDand Power Supply Voltage vs. Positive Supply Voltage ) 500 100 V– = 0 V V– = –15 V ( TA= 25_C TA= 25_C e 7.5 V VINH= 4 V n 400 VINL= 0 V s s 80 R s n ( 300 OFF O 10 V F c O u 60 , S N i t 200 ON r 15 V D n 40 20 V t ( 100 OPEN S r DG301/303 Only 20 0 0 5 10 15 20 0 5 10 15 VD– Drain Voltage (
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PDF
irlr120n.pdf
Voltage 1.0 ––– 2.0 V V DS= VGS, D = 250µA gfs Forward Transconductance 3.1 ––– ––– S V DS= 25V, D = 6.0A I Drain-to-Source Leakage Current ––– ––– 25 V DS= 100V, VGS = 0V DSS ––– ––– 250 µA V DS= 80V, VGS = 0V, J = 150°C I Gate-to-Source
in „was ist denn da los.“ · Analoge Elektronik und Schaltungstechnik ·
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rdr-840q_30w_INN3977CQ.pdf
Measurements taken at 0% to 100% of rated load. 8.2.1 SR FET Version 100 30 VDC 60 VDC 130 VDC 95 400 VDC 500 VDC ) 90 % ( c n 85 i i f E 80 75 70 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Load (A) Figure 11 – Efficiency vs. Load and Line (VDC), Room Temperature – SR FET Version. Power Integrations, Inc. Tel: +1
in „Frage zu PowerInc INN3977CQ“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL3713.pdf
Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e ID= 260A n A t t i e e 1.5 r TJ= 175 C R C 100 n ) e O d r c zi o u a S S r 1.0 t o o n - ( a 10 a D TJ= 25 C r , , 0.5 ID n ( V DS= 15V S 20µs PULSE WIDTH D VGS =10V 1 R 0.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FB180SA10.pdf
Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 e ID= 180A ) n A T J 150 C t t i 2.0 e e r R C100 n e O d r c ez1.5 u T = 25 C u a S J o m o - o n - (1.0 a 10 i D r , , D ) 0.5 I o V = 25V S DS D V =10V 1 20µs PULSE WIDTH R 0.0 GS 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100
in „Strom bis 200A schalten mit Power MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7416_datasheet.pdf
Voltage (V) DS Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.0 e D = -5.6A c ) a A s t s n T J 25°C e e R 1.5 r n u TJ= 150°C O C e ) c r e r u i o 10 S a 1.0 S - m - - o - i N i
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1339.pdf
SO (300 mils) DS1339C-3 DS1339C-33 -40°C to +85°C 3.3 16 SO (300 mils) DS1339C-33 DS1339C-33+ -40°C to +85°C 3.3 16 SO (300 mils) DS1339C-33 DS1339U-2 -40°C to +85°C 2.0 8 mSOP 1339 ##-2 DS1339U-3 -40°C to +85°C 3.0
in „Sehr lange Zeitspannen?“ · Mikrocontroller und Digitale Elektronik ·