collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500 mW hFE DC current gain
collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500 mW hFE DC current gain
collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500 mW hFE DC current gain
V (DC) Miniature ceramic plate capacitors (flanged types) Table 4 Preferred capacitance range for 2222 640 ..... SUFFIX OF CATALOGUE CAPACITANCE VALUE SIZE MARKING NUMBER (pF) (see Table 1) (see Table 2) 1000 I 1n0 102 1500 I 1n5 152 2200 I 2n2 222 3300 IIA 3n3 332 4700 IIB 4n7 472 6800 III 6n8 682 10000 IV 10n 103 15000 V 15n 153 Table 5 Preferred capacitance range for 2222 629 ..... SUFFIX OF CATALOGUE CAPACITANCE VALUE SIZE MARKING NUMBER (pF) (see Table 1) (see Table 2) 1000 I 1n0 102 2200 I 2n2 222 4700
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219/D General Purpose Transistors NPN Silicon 2N2219 2N2219A * 0 COLLECTOR 0 3 2N2222 / 3 2 2N2222A * BASE *Motorola Preferred Devices / 1 1 EMITTER 2 MAXIMUM RATINGS 2N2219 2N2219A P Rating Symbol
applications. NPN types 2N2218 thru 2N2222 are complementary to CASE 22 PNP types 2N2904 thru 2N2907. (TO-18) Collector connected to case 2N2221 CASE 31 2N2222 (TO-5) 2N2906 2N2218,2N2219, 2N2907 2N2904, 2N2905 MAXIMUM RATINGS
BREAKER U E #22AWG 1 2 2N2222 2N2222 ( 7A(US) 1 ) 2 ( T V 24V-ON 100K,1%,1/4W AC-INLET 1 H 5A(INT) U A I J 2 2 C 1 1A,125VAC 1 1 R132 - V J 3 0 J 9 N 3 1N4148 V 4 F6I 1 2 1 0 M 9 C 2 6 V - DN4005 1 2 0 1 1 2 430-0003 HOT V
New Taipei City 235, Taiwan (R.O.C) Website: www.opled.com.tw E-mail: sales@opled.com.tw Tel: 886-2-2222-5698 Fax: 886-2-2222-2566 FOR-046A Opto Plus LED Corp. 2.3” Case Mold Type LED Display OPD-S23010LB-BW OPD-S23011LB-BW ! LB: SUPER BRIGHT BLUE (InGaN/GaN) CURVE Typical Electro-optical Characteristic
A B C D E F G H 1 1 + V1 2 - 5v 2 2N2222A 3 3 15 6 k 14 R 1 13 reset m 12 5 k 2N2222A 3v3 m e D A 11 R 1 n e l e d 10 d a m u 9 4 k 2N2222A 4 n 6 i i 8 R 1 4 - l n 0 a o 6 R 1 0 u n 5 1 v 4 2N2222A 2 e 3 R 1 3 2 4 1 R 1 5 0 5 2N2222A 5 2N2222A 6 6 R7 R8 R9 R10 R11 R12 1k 1k 1k 1k 1k 1k B C A 7 7 Test LEDs Motor 8 8 9 Brushless DC motors require a driver called an ESC (Electronic Speed Control). 9 This circuit serves as a learning
4-4. CONNECTION TO I/O DEVICE FIG.6 show the example for connecting to typical I/O device. AN-E-2222A [11/15] M404SD01BB MECHANICAL DIMENSIONS FIGURE-1 m : I N U 5. 0- ) 8. 5( XAM81 D 7. 0+. 84 6. 1t . 0. 1 0. 31 4 ) 5. 03( 0. 1+8. 41 + . . + - 7 . 0 0 1 0 1 +- +- 2 ( . . 2 3 2 2 A E R A A P I ) D . . R 1 +- O 5. 0+0. 52 . ( . T +- 2 E . N 5. 0 0. 05 - 5 N + 0.+1 0. 5 C 0. 1+0. 06 AN-E-2222A [12/15] M404SD01BB CIRCUIT BLOCK DAIGRAM FIGURE-2 E I ) R i E 0 D ( N A 4 R 1 V I R t R D b G E 4 w O ( o E N 4 o I s A s d R b i × D 0 E i
Mot N SOT23 2N2222A 1P BC847PN Sie DI - pnp/npn separate pair gp AF p1P PMBT2222A Phi N SOT23 2N2222A p1P PXT2222A Phi N SOT89 2N2222A t1P PMBT2222A Phi N SOT23 2N2222A t1P PMST2222A Phi N SOT323 2N2222A 1Q
: “Port Pin” -this a s very very simple model but will serve the purpose for static conditions). V(n001) ` Spice Simulation of voltage points across 2n2222 transistor Note: V(n001) = Target_Vdd_Switched does note meet the 2.4 minimum requirement Voltage drop across Q1 B) New Proposed Vdd Circuit for ICP Bridge Hardware This is a modification on the classic NPN-PNP load switch circuit V(n001) V(n002)) Spice simulation of voltage points across 2n2222 GOOD ! Only 54mV across Load Switch transistor Q2 ******** Here you can see Vdd Target LPC900 voltage looses ~ 60mV ************** ******
: “Port Pin” -this a s very very simple model but will serve the purpose for static conditions). V(n001) ` Spice Simulation of voltage points across 2n2222 transistor Note: V(n001) = Target_Vdd_Switched does note meet the 2.4 minimum requirement Voltage drop across Q1 B) New Proposed Vdd Circuit for ICP Bridge Hardware This is a modification on the classic NPN-PNP load switch circuit V(n001) V(n002)) Spice simulation of voltage points across 2n2222 GOOD ! Only 54mV across Load Switch transistor Q2 ******** Here you can see Vdd Target LPC900 voltage looses ~ 60mV ************** ******
F 8 K 8 M R R C KIA431A 2 W ! ! ! ! h 8 C 2 F 7 5 C 0 8 O 1 5 5 O 7 F 8 8 6 O 0 0 0 2 9 0 9 F 0 R 8 8 8 0 C 6 L ! m 0 8 2 2 V - R - V V V F 2 3 0 C R N 1 R u 8 ) V 1 u 3 3 3 2 9 0 6 +P N P C 0 P F 1 N 2 F ) ) ) 1 1 N 1 1 C 3
F 8 K 8 M R R C KIA431A 2 W ! ! ! ! h 8 C 2 F 7 5 C 0 8 O 1 5 5 O 7 F 8 8 6 O 0 0 0 2 9 0 9 F 0 R 8 8 8 0 C 6 L ! m 0 8 2 2 V - R - V V V F 2 3 0 C R N 1 R u 8 ) V 1 u 3 3 3 2 9 0 6 +P N P C 0 P F 1 N 2 F ) ) ) 1 1 N 1 1 C 3
Stromquelle ADC „0“ Potenzial 0 Sinusstromquelle ISIN Sinusspannungsquelle VSIN Ein Standard Transistor Q2N2222 Eine Standard Diode D1N4002 oder D1N2222 4.2.f Fehlerquellen Fehlermeldung Behebung „Node <Knoten> is Meist ein Anzeichen für eine fehlende Masse. floating“ Lösung: Überprüfe alle Masse-Anschlüsse
2N2222A 2N2222A power amplifier, a non-slewing input stage is 33R the main difference relative to Fig. 1. -55V April 1997 ELECTRONICS WORLD 279 AUDIO DESIGN +48V 55V 33R c5 48p 5R 1k5 100R a a T23 60R
1 8 47pF/1kV C513 220pF CY104 CY103 0 103 R C501 R 1 C 6 8.2nF/1kV Jumper GND1 N.C N.C C502 C202 C203 2 3 C626 222 6 F 1 0 6 MK 1000uF/16V MK 1000uF/16V A 6 1 2 K 2 6 2 N GND1 1 M GND1 R 103 R 1 R R P CN6_1M11 1 s 0 MMSD4148W ! O 1 A 6 R527 EL817MC R256 C212 GND1
R822 R823 3 682K (X7R) P/D 8 7 6 5 4.7 10K 2 (1608) D811 (3216) (2012) R447 (X7R) H N D T BI_AMP(19V) 2 HS1M IC821 V A 5 6 +29V R428 22K FL6300A G 4.7K (1608) R824 (2012) P/S 3 2 1 100 (2012) R813 T D R826 R421 +12V_A 4 270K E B S N 1 220K 2.2K
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