Also, in meinem Datenblatt steht drin, was zu tun ist:
10.2 Write Data in the Column Latches
Data is written by byte to the column latches as for an external RAM
memory. Out of the 11
address bits of the data pointer, the 4 MSBs are used for page selection
(row) and 7 are used for
byte selection. Between two EEPROM programming sessions, all the
addresses in the column
latches must stay on the same page, meaning that the 4 MSB must not be
changed.
The following procedure is used to write to the column latches:
• Set bit EEE of EECON register
• Load DPTR with the address to write
• Store A register with the data to be written
• Execute a MOVX @DPTR, A
• If needed, loop the three last instructions until the end of a 128
bytes page
10.3 Programming
The EEPROM programming consists on the following actions:
• Writing one or more bytes of one page in the column latches. Normally,
all bytes must belong
to the same page; if not, the first page address will be latched and the
others discarded.
• Launching programming by writing the control sequence (52h followed by
A2h) to the
EECON register.
• EEBUSY flag in EECON is then set by hardware to indicate that
programming is in progress
and that the EEPROM segment is not available for reading.
• The end of programming is indicated by a hardware clear of the EEBUSY
flag.
Ralf