time by 2*Rated-Current vs. Ambient 100 temperature 100 10 SFJ-xx12W/Y/U ) 1 S ( e m i T T u u10 SFJ-xx22T/U C0.1 C SFJ-xx15T/U SFJ-xx22T/U 0.01 SFJ-xx15T/U SFJ-xx15W SFJ-xx15W SFJ-xx12W/Y/U 1 0.001 0 50 100 150 200 250 -20 0 20 40 60 80
- 2) gelangt, kannje nach eingeloteter Brük- Tabelle 1 Signal angelegt, wobei dann die Brücken ke (BR 11 bis BR 23) eine Teilung der BR 1 bis BR 10 geoffnet sein rnüssen. VCO-Ausgangsfrequenz erfolgen. Es ste- Frequenz R I R 2 C I C 2 Das Referenzsignal bzw. das FM-Signal hen Teilerfunktionen von 2 his
designer will preferably use the steady state condition to define the power semiconductor. Devices V(BR)DSS R DS(on) Package MTD3N25E 250 V 2.00 Ω DPAK In steady state, the rms current into the lamp will be: Irms = Pout/Von MTD5N25E 250 V 1.10 Ω DPAK I = 55/100 = 550 mA MTD1N50E 500 V 8.50 Ω DPAK rms MTD2N60E
=0V ( 10000 c Bi-directionalV=0V n ) d 10 F p j 1000 Uni-directionalV=V I C R a m e 100 T t 1 i Bi-directionalV= n 10 R r T 1 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 V BR- Reverse Breakdown Voltage(V) T - Pulse Duration (s) P Figure 7 - Maximum Non-Repetitive Peak Forward Figure 8 - Peak
incremental surge to reflow soldering E230531 resistance guaranteed: 260°C/40sec • Typical R less than 1μA • BR@T =JV @BR°C Maximum Ratings andThermal Characteristics when V min>12V x (1+ α T x (T - 25)) (T =25 C unless otherwise noted) BR J A • For surface mounted (α T:Temperature Parameter Symbol Value Unit
Symbol Parameter Test Conditions Min. Typ. Max. Unit CBO Collector Cutoff Current for BF257 VCB = 100 V 50 nA (E = 0) for BF258 VCB = 200 V 50 nA for BF259 VCB = 250 V 50 nA V (BR) CBO Collector-base for BF257 160 V Breakdown Voltage IC = 100 A for BF258 250 V (I = 0) for BF259 300 V E V (BR)CEO* Collector-emitter
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO 45 Vdc (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO 45 Vdc (IC = 100 µAdc, IE = 0)
Emitter-Base Breakdown Voltage V(BR)EBO 6.5 Vdc (IE = 10 µAdc, IC = 0)
Collector Cutoff Current
definitions as documented \ref avr_signames "here". Finally, the following macros are defined: - \b RAMEND <br> The last on-chip RAM address. <br> - \b XRAMEND <br> The last possible RAM location that is addressable. This is equal to RAMEND for devices that do not allow for external RAM. For devices that allow external RAM, this will be larger than RAMEND. <br> - \b E2END <br> The last EEPROM address. <br> - \b FLASHEND <br> The last byte address in the Flash program space. <br> - \b SPM_PAGESIZE <br> For devices with bootloader support, the flash pagesize
Dissipation 75 mW IR Diode Peak Forward Current (Pulse Wide = 10S, 300 pps) 1 A Diode Power Dissipation 100 mW Phototransistor Collector-Emitter Voltage 30 V Phototransistor Emitter-Collector Voltage 5 V Operating Temperature Range -25℃ to + 85 Storage Temperature Range -40℃ to + 100 Lead Soldering Temperature
noted Symbol Ratings Test Condition(s) Min Typ Mx Unit Collector-Emitter I =200 mA, I =0 45 V V CEO(BR) Breakdown Voltage (*) C B Collector-Emitter I =100 mA, V =-1.5 V V CEX(BR) Breakdown Voltage (*) C BE 50 V Collector-Emitter Saturation V CE(SAT) Voltage (*) C =4 A,BI =0.4 A - - 1.1 V Collector-Emitter Cutoff VCE100 V ICEX Current VBE=-1.5 V - - 2 mA Emitter-Base Cutoff Current IEBO VEB7 V - - 1 mA V BE Base-Emitter Voltage (*) C =4.0 A,CE =4.0V - - 1.5 V COMSET SEMICONDUCTORS 2/3 BD142 Symbol Ratings Test Condition
board with a initial periodic rate of 1.0s. * Using buttons flash rate can be adjusted in steps of 100ms. Use Button1 (P15.13) to increase flash rate. * Use Button2 (P15.12) to decrease flash rate. * * History <br> * * Version 1.0.0 Initial <br> * */ #include <XMC4700.h> #include "xmc_ccu4.h" #include
Conditions Min Typ Max Unit Static Characteristics V V =0V, I =250µA Drain-Source Breakdown Voltage (BR)DSS GS D 60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source
speeds and the relevant register settings are given in Table 10. Table 9. BR_T0 and BR_T1 settings BR_Tn Bit 0 Bit 1 Bit 2 Bit 3 Bit 4 Bit 5 Bit 6 Bit 7 BR_T0 factor 1 1 2 4 8 16 32 64 BR_T1 range 1 to 32 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64 33 to 64 Table 10
to 5.5 4.5 to 5.5 V CC Ambient operating temperature (A) 0 to 70 0 to 70 °C Load capacitance (CL) 100 100 pF Input rise and fall times ≤ 5 ≤ 5 ns Input pulse voltages 0 to 3 0 to 3 V Input and output timing ref. voltages 1.5 1.5 V Note: Output Hi-Z is defined as the point where data is no longer driven
Gate-source leakage IGSS - - 10 A VGS8V, V =0DS Drain-source breakdown voltage V 20 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current IDSS - - 1 A VDS20V, V =0GS Gate threshold voltage VGS (th) 0.3 - 1.0 V VDS10V, I =D00A - 2.5 3.5 ID=100mA, V =GS5V - 3.0 4.2 I =100mA, V =2.5V Static drain-source
5.0Vout U1 TPS54240 2.5A Buck lit i.MX6 U22 SoloLite LT1719 1GHz 4.5ns comparator disabled LAN8710A 100MEth PHY U7 SN65HVD21 TPS54240 RS-485 2.5A Buck t Driver b R M D 5 D 2 DRV8834 5 O Motor Drv 9 L D 0 blinkingslowly L 3 MC34717 Dual5A Buck ATmega48V Microcontroller J4 to motor Opto Opto RS-485 RS-485
IRLB8748PbF 1000 1000 VGS VGS TOP 10V TOP 10V 9.0V 9.0V A 5.5V A 5.5V t 4.5V t 4.5V e 4.0V e 4.0V u 100 3.5V u100 3.5V C BOTTOM 3.0V C BOTTOM 3.0V e e u u o o 3.0V - - - - i 10 3.0V a 10 r r , , ID ID ≤60µs PULSE WIDTH ≤60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 1 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source
1 VCh Clamp ESD was measured by Transmission Line Pulsing (TLP) System. TLP conditions: Z0=50Ω,tp=100ns, tr=1ns 1 3 I/O1 GND I/O2 Compliant: IEC 61000-4-2, -4 and -5 Flow-Thru Design:Route the data lines straight away under the TVS Product Marking: diode I/O pins, that the data signal will not pass
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
Bild
