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MS5540C_1_.pdf
(with 2nd a order calculation) e p e T 0 -5 -40 -20 0 20 40 60 80 Temperature (°C) Pressure Error Accuracy vs temperature (typical) 18 16 14 12 10 r b 8 Perror(1000,1st order) m r Perror(1000,2nd order) o 6 e Perror(800,1st order) r 4 u Perror
in „Vakuummeter für Grobvakuum selber bauen - welcher Sensor?“ · Mikrocontroller und Digitale Elektronik ·
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RH5RL37AA.pdf
5.363 5.500 5.637 R 5RL56A 5.460 5.600 5.740 1mA≤ OUT R 5RL57A 5.558 5.700 5.842 R 5RL58A 5.655 5.800 5.945 ≤80mA R 5RL59A 5.753 5.900 6.047 R 5RL60A 5.850 6.000 6.150 8 R 5RL Topt=25˚C Quiescent Current Line Regulation InputVoltage OutputVoltageTempco. Iss(µA) ∆V OUT/∆VI(%/V) VI(V) ∆VOUT/∆T(ppm/˚C)
in „Spannungsregler 3,5 oder 3,6v gesucht.gibt es das?“ · Analoge Elektronik und Schaltungstechnik ·
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604551.pdf
1250 A VVJ = 0VJM t = 8.3 ms (60 Hz), sine 1310 A ●High power rectifiers R ●Field supply for DC motors It T = 45°C t = 10 ms (50 Hz), sine 9800 A s ●Power supplies VJ 2 V R = 0 t = 8.3 ms (60 Hz), sine 9450 A s T = T t
in „Kühlkörper für Gleichrichterdiode“ · Analoge Elektronik und Schaltungstechnik ·
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MAX712-MAX713.pdf
REF TEMPERATURE 11 7 T2 7 M THI 10 HOT ) R5 R3 ( HIGH PEAK G L 9 +2.0V TEMP V T COLD 1μF T 8 120Hz RIPPLE O TLO 0.022μF 0.022μF R4 7 LOW PEAK MAX712 MAX713 T1 T3 6 BATT- 0 200 400 600 800 1000 IN THERMAL AMBIENT LOAD CURRENT
in „Kleine Nimh ladeschaltung“ · Mikrocontroller und Digitale Elektronik ·
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BD139-16.pdf
2831, Fax. +48 22 612 2327 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Portugal: see Spain Tel. +1 800 234 7381, Fax. +1 800 943 0087 Romania: see Italy China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, 72 Tat Chee Avenue, Kowloon Tong
in „Transistor als Schalter (BD139) richtig auslegen“ · Mikrocontroller und Digitale Elektronik ·
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bd139.pdf
2831, Fax. +48 22 612 2327 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Portugal: see Spain Tel. +1 800 234 7381, Fax. +1 800 943 0087 Romania: see Italy China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, 72 Tat Chee Avenue, Kowloon Tong
in „Basisvorwiderstand Berechung beim BD139 richtig?“ · Mikrocontroller und Digitale Elektronik ·
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DAT-31-PP.pdf
Data W3'683 FORFN ULVLQJ HGJH RI /( C16:C1 'DWD KROG WLPH DIWHU FORFN W3'+/' IDOOLQJ HGJH RI /( S QV t tLEPW t PDSUP PDHLD ® For detailed performance specs Mini-Circuits & shopping online see web site ISO 9001 ISO 14001 AS 9100 CERTIFIED TM P.O. Box 350166, Brooklyn, New York 11235-0003 (718) 934-4500
in „Signalpegel mit Pin-Dioden einstellen?“ · HF, Funk und Felder ·
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2N7000-D.PDF
T , T −55 to +150 °C Range J stg 1 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD Characteristic Symbol Max Unit BULK PACK TAPE & REEL AMMO PACK Thermal Resistance, Junction−to−AmbienR qJA 357
in „ESD-Demonstrator / 2n7000 MOS-FET zerstören“ · Analoge Elektronik und Schaltungstechnik ·
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LNK605etc_linkswitch_ii_family_datasheet-1512164.pdf
-606/613-616 Typical Performance Characteristics 1.200 3 1.200 3 0 0 8 8 )1.000 - )1.000 - ° P ° P t 5 5 i 20.800 y 20.800 i o c o L t e t n e0.600 u e0.600 e i q i r a r a u m0.400 F m0.400 C r r o o (0.200 (0.200 0.000 0.000 -40 -15 10 35 60 85 110 135 -40 -15 10 35 60 85 110 135 Temperature (°C)
in „Bauknecht Mikrowelle MW59MB Überspannung Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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Acrich2.pdf
Distribution vs. Wavelength Characteristic – G, H aX S0 1.2 h4 e9 1 e0 t w P 0.8 r i c b S t 0.6 v D l 0.4 R 0.2 0 300 400 500 600 700 800 Wavelength[nm] Relative Spectral Distribution vs. Wavelength Characteristic - E 1.2 1 r w 0.8 l n t t e i 0.6 S i t D e 0.4 R 0.2 0 300 400 500 600 700 800 Wavelength[nm] Rev. 04 April 2013 7 www.Acrich.com e P n i RoHS a L D a Relative Spectral Distribution vs. Wavelength Characteristic – B, C 1 1.2 S h 0 1 t e P 0.8 r i e i 0.6 S i t D e 0.4 R 0.2 0
in „Surge Schutzbeschaltung am Netz“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
irmp.h
define NETBOX_START_BIT_PULSE_TIME 2400.0e-6 // 2400 usec pulse #define NETBOX_START_BIT_PAUSE_TIME 800.0e-6 // 800 usec pause #define NETBOX_PULSE_TIME 800.0e-6 // 800 usec pulse #define NETBOX_PAUSE_TIME 800.0e-6 // 800 usec pause #define NETBOX_FRAMES 1 // Netbox sends 1 frame #define NETBOX_AUTO_REPETITION_PAUSE_TIME
in „ATmega resettet dauernd“ · Mikrocontroller und Digitale Elektronik ·
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Datei
system_stm32f4xx.c
including heap and stack). * @param None * @retval None */ void SystemInit_ExtMemCtl(void) { __IO uint32_t tmp = 0x00; register uint32_t tmpreg = 0, timeout = 0xFFFF; register __IO uint32_t index; /* Enable GPIOC, GPIOD, GPIOE, GPIOF, GPIOG, GPIOH and GPIOI interface clock */ RCC->AHB1ENR |= 0x000001F8; /
in „STM32F4 Discovery Audio CS43L22 I2C Problem“ · Mikrocontroller und Digitale Elektronik ·
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HM8631_HM8632_HM8634__1_.pdf
Voltage Swing as a function of Output Maximum Output Voltage as a function of Current. Frequency. 800 ) A600 ( n e r400 C t e s200 i u Q 0 1.5 2.5 3.5 4.5 5.5 6.5 Supply Voltage (V) Quiescent Current as a function of Supply Voltage. Quiescent Current as a function of Temperature. 5 HM8631, HM8632, HM8634
in „Identifizierung 8 pin SMD Bauteil aus BLDC Controller“ · Analoge Elektronik und Schaltungstechnik ·
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MJE13009-D.PDF
is discussed in the applications ) information section. D I A 1 M 0.7 O 0.5 D = 0.5 ( C 0.3 N 0.2 T 0.2 S R 0.1 L 0.1 Zq = r(t)qR P(pk) M 0.07 0.05 JC(t) JC E 0.05 R qJC= 1.25°C/W MAX T 0.02 D CURVES APPLY FOR POWER T 0.03 PULSE TRAIN SHOWN t1 I READ TIME AT t1 2 S 0.02 0.01 T - T = P Z A J(pk) C (
in „Elektronischen Halogen-Trafo auf LED-Betrieb umrüsten“ · Analoge Elektronik und Schaltungstechnik ·
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BLF188XR_BLF188XRS.pdf
4 mm L7, L8 2.5 turn 0.8 mm copper wire D = 3.0 mm, length = 2.4 mm R1, R2 resistor 9.1 SMD 1206 T1 semi rigid coax 25 , Micro-Coax UT-090C-25 length = 160 mm T2 semi rigid coax 25 , Micro-Coax UT-141C-25 length = 160 mm [1] American Technical Ceramics type 800B or capacitor of same quality. [2]
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b_1023.pdf
; p.u \ISS 66 031 1520 ~85 0;1 -..u. rrnl t 67 ST FLLL aJSTCJ'1DEVICE lluF""'-' r. - \ISS fit I~ li~ 68 lHT AEFDl61 ~. ~ 111A'61 6 2tIif'l't t~~~Rm~!B~ 63 b r--- t!:: '1 61 2 ~Itj~~il~~~ ~ rP2 6 59J 7 15112l 58 '<18 UlrF 8 56 ~~IIr. ::-0· 11Zl
in „Hilfe bei Reparatur Siemens Multimeter“ · Analoge Elektronik und Schaltungstechnik ·
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201612120034585136.pdf
current vs. Input Voltage Quiescent current vs. Temperature 30 0.05 ) A28 VIN=5V u O (26 O =0mA T TA = 25 C T24 N 0.04 IO = 0mA N22 R R20 R R18 U 0.03 U16 C C14 N N12 W 0.02 W10 D D 8 T T U 0.01 U 6 S S 4 2 0.00 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -50 -25 0 25 50 75 100 125 0 INPUT VOLTAGE(V) TEMPERATURE
in „Unbekannter SMD-Marking-Code CP5R und 4061 1616“ · Analoge Elektronik und Schaltungstechnik ·
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1N5283_1_1N5314_1-3442128.pdf
RATINGS Parameters/Test Conditions Symbol Value Unit MSC – Lawrence Junction and Storage Temperature T Jnd T STG -65 to +175 oC o 6 Lake Street, Thermal Resistance Junction-to-Lead @ L = .375 in RӨJL 250 C/W Lawrence, MA 01841 Thermal Impedance ZӨJX 25 OC/W Tel: 1-800-446-1158 or o (1) (978) 620-2600
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1763fh.pdf
Current 1200 1200 1200 1000 1000 1000 R = 50Ω A R = 30Ω A R = 36Ω A L ( L ( IL= 50mA* ( IL= 50mA* T800 IL= 50mA* T800 L T800 E TJ= 25°C E TJ= 25°C E TJ= 25°C R VIN= VSHDN R VIN= VSHDN R VIN= VSHDN C600 *FOR VOUT = 1.5V C600 *FOR VOUT = 1.8V C600 *FOR VOUT = 2.5V N N N P P P D400 RL= 150Ω D400 RL= 180Ω
in „Review: USB→LT1763-3.3 V + SCD41-D-R2 (I²C), Funduino (ATMEGA2560)“ · Mikrocontroller und Digitale Elektronik ·
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DS75160__161__162_GPIB-Transceiver.pdf
R R T T T R L L T T T R T T R H X H T L X H R X H L R X L L T DS75162A Control Input Level Transceiver Signal Direction SC TE DC ATN* EOI REN IFC SRQ NRFD NDAC DAV H H H R T T T R R T H H L T T T R R R T H L H R T T T T T R H L L T T T R T T R L H H R R R T R R T L H L T R R R R R T L L H R R R T T T R L L L T R R R T T R X H X H T X L X H R X X H L R X X L L T e H High level input LeLow level input Xe Don’t care
in „PM2528 als Scannermultimeter mit GPIB“ · Mikrocontroller und Digitale Elektronik ·
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XLampXT-E.pdf
of Cree, Inc. 5 xlamp XT-E LEDs lectrical Characteristics (Tj = 85ºC) Elec rical Characteristics (T = 85 °J) 1600 1400 ) 1200 A ( t 1000 n e u 800 C d 600 a w r 400 F 200 0 2.50 2.75 3.00 3.25 3.50 Forward Voltage (V) Relative Intensity vs. Current (Tj = 85ºC) Relative Luminous Flux vs. Current (T
in „Verkaufe Restbestände Cree LEDs XT-E XTEAWT-00-0000-00000BFE4“ · Markt ·
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Siemens_B1023_Norma_MP14.pdf
~ ..-11 .ISS ~rtfl: ~ J, 4 /11111 11 1 •.. ra i ~ '\01 • I"'v ~ ~". •s• ••• Iv /"P1 --B....-J& JAF~t ~ t. .,. 3 3 ~ JAIF ü uNü~m~ ~N~~t. ~~~~~ ~~ ~~~N ~uu 3 1e.G •":JIi7 ~ D.18 LAi (.) 78'-+7.. ~t .• t ~ 100 ~~~~ ~~~ ~ffi ~~~~rn ~~uüüo ~N~m .. l'1iIi grg"-b B~ o 0 2 I 1 -2 tt~ :. ~ 2 11- ~ ~ ~ 5 t-t~ OQ~••• •. 'I7uF! O~ vivf""v ISS ::MlI'I loU) <"Q/T~ ~. ~00 t=i~ 0 f1 u ~ g r~ ~~ ~ ll!J7 \211< t ISS 'EFIN \ISS -\ L
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Materialliste für ein elektronisch stabilisiertes Netzteil
o.k. F1 Sicherungshalter 1 5x20 mm, 12,7 mm - Bohrung PL FPG1-40 Reichelt 0,96 F1 Feinsicherung 1 800 mA mittelträge MTR 0,8A Reichelt 0,07 T1 Ringkerntrafo, 10 V - Wicklung 1 Primär 230 V, 50 Hz, 50 VA T1 RKT 5012 Reichelt 16,80 4 evtl. Montagezubehör für Pos. 3 1 60 mm, Gummischeiben 38 C 662 Bürklin 0,79 T2 Brückengleichrichter 1 BC40 / CT300 / 2200 60 A 800 Bürklin 0,83 T3 Brückengleichrichter 1 B250C, rund B250C1500RUND Reichelt 0,14 R7 3 Diode 1 1N 4007 1N 4007 Reichelt 0,02 T4 Spannungsregler 1 LM317
in „Schulprojekt Elektronisch stabilisiertes Netzteil“ · Analoge Elektronik und Schaltungstechnik · · Diagramme
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Praktikumsbeleg_A3_1_.pdf
fremderregten Gleichstromnebenschlußmotors 3.1.1 Erstatzschaltbild Prinizpieller Aufbau Motorengleichungen: uq(t) = cΦ∗ω(t) M(t) = cΦ*i A(t) cΦ = konstant Ankerstromkreis G A iA(t)RA+ L di (t)= u A(t) −u(t) R dt A IA(s)RA + sLIA(s) =U A(s) −U (s) ua(t) IA(s) 1 1 LA G As) = = ∗ mit: TA= L A U A(s)−U q(s) RA 1+ sT A RA uq(t) T A 1.5msek Blockbild: U As) 1 1 IA(s) G = ∗ RA 1+ sTA - U qs) Ankerrückwirkung: G 5 uq(t) = cΦ∗ω(t) cF: magnetischer Fluß U q(s) G 5(s) = Ω(s) = cΦ Blockbild: Ω(s) U qs) G 5= cΦ cF= 1.3Vs Reibung G
in „Frage zu Übertragungsfunktion, Sprungantwort“ · Mikrocontroller und Digitale Elektronik ·
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db_esprimo_e5720-Datenblatt.pdf
bis E4600 bis E4600 bis E4600 L2 Cache - - - - - 2 MB 2 MB 2 MB 2 MB Front Side Bus (FSB) - - - - - 800 MHz 800 MHz 800 MHz 800 MHz Intel® Pentium™ Dual Core E2xxx - - - - - bis E2200 bis E2200 bis E2200 bis E2200 L2 Cache - - - - - 1 MB 1 MB 1 MB 1 MB Front Side Bus (FSB) - - - - - 800 MHz 800 MHz 800
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DSEP_15-06A.pdf
reserved 1 - 2 DSEP 15-06A 40 2000 40 TVJ 100°C TVJ 100°C V = 300V V = 300V A nC R A R 30 1500 30 IF T =150°C Q r IRM VJ T VJ00°C IF= 30A T = 25°C I = 15A 20 VJ 1000 20 F IF= 30A IF=7.5A IF= 15A I =7.5A F 10 500 10 0 0 0 0 1 2 V 100 A/ms 1000 0 200 400 600 A800 1000 VF -dF /dt -dF /dt Fig. 1 Forward current
in „Freilaufdiode wird zerstört, warum?“ · Analoge Elektronik und Schaltungstechnik ·
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AN1543-D.PDF
Hertz r resistivity (0.018 for copper) l meter ) ( d mm μ permeability (1 for copper) S N 0.1 K H T Table 8.Resistance as a Function of the Frequency Φ 0.50 Φ 1.00 2.00 Thickness Frequency mm mm mm a 25kHz N/A N/A 0.0094Ω 0.427mm 0.01 35kHz N/A N/A 0.0112Ω 0.360mm 0 200 400 600 800 1000 1200 50kHz
in „Reparatur EVG für T5 Röhre“ · Analoge Elektronik und Schaltungstechnik ·
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DSEP_15-06B.pdf
1 2 3 4 V 100 1000 0 200 400 600 A800 1000 A/µs VF -dF /dt -diF/dt Fig. 1 Forward current I Fversus V F Fig. 2 Reverse recovery charge Q r Fig. 3 Peak reverse current I RM versus -diF/dt versus -diF/dt 2.0 120 60 0.30 T = 100°C VJ V TVJ= 100°C µs V = 300 V ns R 50 F = 15 A 0.2t t 100 V fr 1.5 rr FR Kf 40 0.20 IF= 30 A 80 I = 15 A 1.0 F 30 0.15 I I = 7.5 A RM F 60 20 0.10 tfr 0.5 V FR Q r 10 0.05 40 0.0 0 0.00 0 40 80 120 C 160 0 200 400 600 A/µs 1000 0 200 400 600 800s 1000
in „Freilaufdiode wird zerstört, warum?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN1154_Precision_Temperature_Sensing_with_RTD_Circuits.pdf
measurement resolution can be achieved ⎝2 – Code⎠ across the RTD temperature range of -200°C to Where: +800°C with a single point calibration. Code = ADC output code A high resolution Delta-Sigma ADC can serve well for high performance thermal management applications R A = Biasing resistor such as industrial
in „PT100 Zehntel Grad Auflösung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SiT1532_rev1p26.pdf
1.225V in 100 Frequency Stability mV increments. Similarly, VOL programming range is between The SiT1532 is factory calibrated (trimmed) to guarantee 350 mV and 800 mV. For example; a PMIC or MCU is frequency stability to be less than 10 ppm at room internally 1.8V logic compatible, and requires a 1.2V
in „Helium vs. Iphome“ · Offtopic ·
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PDF
16151fas.pdf
Current 0.60 1.25 50 25 V = 1.23V 0.55 NOT SWITCHING 0.50 1.24 40 ) 23 ) V B µ ( 0.45 E VOLTAGE A T G ISWITCH= 500mA G C E T 0.40 L1.23 30 U R 21 O 0.35 O R U V K N T VIN= 12V C 0.30 A1.22 CURRENT 20 ( E 19 I ISWITCH= 300mA D A S S 0.25 E ) I VIN= 1.2V F Q 0.20 1.21 10 17 0.15 0.10 1.20 0 15 –50 –25
in „LT1615, Spannungsspitze beim Einschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
16151fas.pdf
Current 0.60 1.25 50 25 V = 1.23V 0.55 NOT SWITCHING 0.50 1.24 40 ) 23 ) V B µ ( 0.45 E VOLTAGE A T G ISWITCH= 500mA G C E T 0.40 L1.23 30 U R 21 O 0.35 O R U V K N T VIN= 12V C 0.30 A1.22 CURRENT 20 ( E 19 I ISWITCH= 300mA D A S S 0.25 E ) I VIN= 1.2V F Q 0.20 1.21 10 17 0.15 0.10 1.20 0 15 –50 –25
in „[V] 8St. DC/DC Micropower Step-Up DC/DC Converters LT1615-1 (12€)“ · Markt ·
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PDF
Datasheet_Shunts.pdf
calculate the maximum allowable power dissipation (Pe) at Te, using the following formulas: P a = 0.667 (800A x 0.050V) = 26.7Watts P puls =P a/K 1= 26.7W/0.5 = 53.4Watts P e P e =P a x [1-T e-25°C)/100°C], and Ie = R 53.4W Ipulsed = 0.0000625Ω = 924A Where Ie = Maximum permissible continuous current at elevated OUTPUT temperature T e P e = Maximum power dissipation at the elevated temperatureTe – + R = Shunt’s resistance (see selection guide for values) P a = 0.667 x shunt’s rated power at 25°C ambient – + + – LOAD DC SUPPLY T
in „Operationsverstärker nichtinvertierende Grundschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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TC4056.pdf
为输入电源电压,V BA为电池电压,IB为充电电流。当热反馈开始对IC提供保护时, 环境温度近似为: 实例:通过编程使一个从5V 电源获得工作电源的TC4056向一个具有3.75V电压的放电锂离子电池提供800mA 满 幅度电流。假设 Jq为150℃/W(请参见电路板布局的考虑),当TC4056 开始减小充电电流时,环境温度近似为: TC4056 可在65℃以上的环境温度条件下使用,但充电电流将被降至800mA以下。对于一个给 定的环境温度,充电电流可有下式近似求出: 正如工作原理部分所讨论的那样,当热反馈使充电电流减小时,PROG 引脚上的电压也将成比例地减小。切记不 需要在TC4056 应用设计中考虑最坏的热条件
in „Frage zu 5V-Mini-USB-1A-Lithium-Li-ion-Akku-Lademodul“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Coaxial_Resonators_for_VCO.pdf
range of inductance at 800 MHz is: reactance which can be realized by this technique, although arbi- +5 V +5 V +5 V trarily high reactance values can be achieved close to SRF.The designer should prudently analyze the circuit
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PDF
MOC304_MOT.pdf
is a function of the load–driving thyristor(s) only. TYPICAL ELECTRICAL CHARACTERISTICS TA= 25⋅C +800 OUTPUTPULSEWIDTH–80 s NORMALIZEDTO A +600 1.5 T =25⋅C ( F =30mA 1.4 A T +400 f=60Hz E TA=25⋅C 1.3 R +200 I1.2 U D E 0 Z1.1 A L 1 S –200 M N –400 O0.9 , N0.8 M–600 IT 0.7 –800 –4 –3 –2 –1 0 1 2 3 4 5
in „Solid state Relais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
moc3041.pdf
is a function of the load–driving thyristor(s) only. TYPICAL ELECTRICAL CHARACTERISTICS TA= 25⋅C +800 OUTPUTPULSEWIDTH–80 s NORMALIZEDTO A +600 1.5 T =25⋅C ( F =30mA 1.4 A T +400 f=60Hz E TA=25⋅C 1.3 R +200 I1.2 U D E 0 Z1.1 A L 1 S –200 M N –400 O0.9 , N0.8 M–600 IT 0.7 –800 –4 –3 –2 –1 0 1 2 3 4 5
in „Optokoppler + Triac = Rauch?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOC_3043_MOT.pdf
is a function of the load–driving thyristor(s) only. TYPICAL ELECTRICAL CHARACTERISTICS TA= 25⋅C +800 OUTPUTPULSEWIDTH–80 s NORMALIZEDTO A +600 1.5 T =25⋅C ( F =30mA 1.4 A T +400 f=60Hz E TA=25⋅C 1.3 R +200 I1.2 U D E 0 Z1.1 A L 1 S –200 M N –400 O0.9 , N0.8 M–600 IT 0.7 –800 –4 –3 –2 –1 0 1 2 3 4 5
in „Leistungslos schalten mit Nulldurchgang Erkennung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ths7316.pdf
VS=−3.3−V d -30 Load−=−150 W ||−13−pF B -30 Load−=−150 W ||−13−pF F−=−8−MHz ! F−=−8−MHz ! o n r -40 t -40 t F−=−16−MHz t F−=−16−MHz F−=−4−MHz i i -50 c -50 − n n -60 m -60 o a r -70 − H e -70 r r d -80 F−=−2−MHz − -80 F−=−1−MHz O n F−=−4−MHz r -90 2 F−=−2−MHz 3 F−=−1−MHz -90 -100 0.5 1 1.5 2 2.5 3 0.5
in „Videopfad - LM1881 -Sync-Problem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HTC8632.pdf
Offset Voltage Production Distribution. 5 6 5.5V 4.5 Sourcing Current )P ) 4 V 5 e e 5.0V g 3.5 g 4 l 3 t o l t 2.5 +25℃ V 3 u 2 +125℃ t t –40℃ u u 1.5 t 2 2.7V O 1 u O 1 0.5 Sinking Current 0 0 0 15 30 45 60 75 10k 100k 1M 10M Output Current (mA) Frequency(Hz) Output Voltage Swing as a function of Output Maximum Output Voltage as a function of Current. Frequency. 800 450 ) 445 A A VDD = 5V ( 600 ( 440 t t e e 435 r r u 400 c 430 t t n e 425 c s e 200 i 420 u u Q Q 415 0 410 1.5 2.5 3.5 4.5 5.5 6.5 -50 0 50 100 150 Supply Voltage (V) Temperature (℃) Quiescent Current
in „Identifizierung 8 pin SMD Bauteil aus BLDC Controller“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LT1014CN_DN.pdf
DALLAS, TEXAS 75265 1 SLOS039D − JULY 1989 − REVISED AUGUST 2009 AVAILABLE OPTIONS { PACKAGED DEVICES } T VIOmax SMALL CHIP CERAMIC PLASTIC A AT 25°C OUTLINE CARRIER DIP DIP (DW)§ (FK) (J) (N) 300 µV — — — LT1014CN 0°C to 70°C 800 µV LT1014DDW — — LT1014DN 300 µV — — — LT1014IN −40°C to 105°C 800 µV LT1014DIDW
in „Unterschied beim LT1014 ?“ · Mikrocontroller und Digitale Elektronik ·
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PA94U_M.pdf
O 10 P E P S L -210 I .92 A 5 C = 2.2pF U R C Q E 0 -240 .88 T 0 25 50 75 100 125 150 1M 10M 20M 0 200 400 600 800 1000 I TEMPERATURE, T (°C) FREQUENCY, F (Hz) TOTAL SUPPLY VOLTAGE, V (V) S SMALL SIGNAL RESPONSE V OUTPUT VOLTAGE SWING POWER RESPONSE 120 O40 1K V
in „Netzstrom-Verzerrungen sichtbar machen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BD135_137_139_3.pdf
2831, Fax. +48 22 612 2327 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Portugal: see Spain Tel. +1 800 234 7381, Fax. +1 800 943 0087 Romania: see Italy China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, 72 Tat Chee Avenue, Kowloon Tong
in „Alternative BC327 und 337“ · Analoge Elektronik und Schaltungstechnik ·
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DB106S.pdf
DB103S DB104S DB105S DB106S DB107S UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward I(AV) 1.0 A Rectified Current @T A=40℃ Peak Forward
in „Ultraschallreiniger EMMI 05 - Durchgebranntes Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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MS5611-01BA01.pdf
41 -4000 8500 TEMP =20°C+dT*TEMPSENS=2000+dT *C6 /2 = 20.07 °C Calculate temperature c ompenensated pressure [3] OFF Offset at actual temperature signed int 64 41 -8589672450 12884705280 2420281617 OFF =OFF T1CO*dT =C2 *2 +(C4*dT)/2 7 Sensitivity at actual temperature SENS 15 8 signed int 64 41 -4294836225 6442352640 1315097036 SENS =SENS +T1S*dT=C1 * 2 +(C3 *dT)/2 Temperature compensated pressure (10…1200mbar with 100009 P 0.01mbar
in „16 oder 24 bit mit SPI“ · Mikrocontroller und Digitale Elektronik ·
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QPD1025_Data_Sheet.pdf
C2 0.7pF 1 AmericanTechnical Ceramics 600S0R7FT250XT C3,C4 20pF 2 AmericanTechnical Ceramics 600S200T250T C6,C7 5.6pF 2 AmericanTechnical Ceramics 600S5R6T250T C21, C22, C27 6.8pF 3 AmericanTechnical Ceramics 600S6R8FT250XT C1, C5,C8 8.2pF 3 AmericanTechnical Ceramics 600S8R2FT250XT C19,C20 12pF 2 AmericanTechnical Ceramics 800B120BC500XT C23 1.5pF 1 AmericanTechnical Ceramics 800B1R5BC500XT C30 1.8pF 1 AmericanTechnical Ceramics 800B1R8BT500XT C28,C29 2.4pF 2 AmericanTechnical Ceramics 800B2R4BC500XT C12,C13,C15,C16,C17,C18
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Kemet_FM.pdf
current value is 1 mA discharged per 1 F. 0.22 mA (I) (V) SW 5.5 V A V1: 3.0 V V 1 V2: 2.5 V I × (T 2-T ) 1 V 2 C= (F) 5.5 V V C R V 1-V 2 T1 T2 Time (seconds) 30 minutes Capacitance (Discharge System – 3.5 V, 3.6 V) As shown in the diagram below, charging is performed for a duration of 30 minutes
in „Speicherkondensator“ · Analoge Elektronik und Schaltungstechnik ·
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ART2K0FE_2K0FES_2K0FEG.pdf
80 amp01199 G (5) η p (4) D (dB) (3) (%) (2) (1) (1) 30 60 (2) (3) (4) (5) 28 40 26 20 24 0 0 400 800 1200 1600 2000 2400 0 400 800 1200 1600 2000 2400 P (W) P (W) L L V = 65 V; f = 108 MHz; t = 100 s; = 10 %. V = 65 V; f = 108 MHz; t = 100 s; = 10 %. DS p DS p (1) IDq = 50 mA per section (1)
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AND8020-D.PDF
VCC min =V CC −5%,V TTx = V TT+5% Table. The voltage at the Node where R , R , and R (VOHmax * VTT ) t1 t2 t3 IOHmax + connect remains at a statTT voltage of CC − 2.0 V, or R t 1.3 V. (eq. 10) ((3.135 * 0.885) * 1.36+ 17.7 mA R t1+ R t2+ Z 0 50 V V IOLmin + (VOLmin * VTT) R t3+ R t1ǒ TT * EE Ǔ (eq. 11) Rt VOH ) VOL * 2V TT ((3.135 * 1.685) * 1.365) R ( V ) V ) ) ( R * V ) 50 + 1.7 mA V TT + t3 OH OL t1 EE (eq. 12) R t1) 2R t3 Case #2: VCCmin + 5%, VTTmax − 5% Driver Receiver (VOHmax * VTT) IOHmax + R t *T−Line0Z ((3.465 * 0.885) * 1.235) *T−Line0Z 50 + 26.9 mA * or Twisted PaRt1 Rt2 (VOLmin
in „3.3V->PECL->1.8V High-speed Terminierung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
devlist.txt
. . . .1) *6229 D1 29F400AT . . . .1) *6230 D1 29F800B . . . . .1) *6083 D1 29F800T . . . . .1) *6084 D1 29F800AB . . . .1) *6231 D1 29F800AT . . . .1) *6232 D1 29LL800B . . . .1) *6362 D1 29LL800T . . . .1) *6363 D1 29LV002B . . . .1) *6293 D1 29LV002T
in „PROM lesen /schreiben / Programmiergerät“ · Mikrocontroller und Digitale Elektronik ·