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PDF
APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS Drain-Source On-state V GS4.5V , IDS-3A 80 100 RDS(ON) mΩ Resistance V GS-2.5V , DS=-2A 110 135 V SD Diode Forward Voltage ISD-1.25A , VGS0V -0.7 -1.3 V b Dynamic Q Total Gate Charge V =-10V , I =-1A g DS DS 6.4 8 Qgs Gate-Source Charge V GS=-4.5V 1 nC Qgd Gate-Drain Charge 1.8 t Turn-on
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1307.pdf
32.768kHz Crystal Connection V - +3V Battery Input BAT GND - Ground ORDERING INFORMATION SDA - Serial Data DS1307 8-Pin DIP (300-mil) SCL - Serial Clock DS1307Z 8-Pin SOIC (150-mil) SQW/OUT - Square Wave/Output Driver DS1307N 8-Pin DIP (Industrial) DS1307ZN 8-Pin SOIC (Industrial) DESCRIPTION The DS1307 Serial
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NL6448AC33-29.pdf
time. • Uneven brightness and/or small spots may be noticed depending on different display patterns. 22 Data Sheet EN0439EJ1V0DS00 NL6448AC33-29 OUTLINE DRAWING: Front View (Unit: mm) (88.3) . . a 2 0 0 . . y m φ 0 0 0 . 2 2 5 5 2 8 1 (13) (82) (97.5) ) E ( (84.5) E A . ( ( r a Y T ) 0 t m M S N EGATL
in „[S] Leute die eine "Grafikkarte" für uC bauen wollen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC18FXX80_to_PIC18FXXK80_Migration_Guide.pdf
Unsupported PIC18FXX80 Features All PIC18FXX80 MSSP/SPI features can be supported by PIC18FXXK80 devices. DS39982A-page 18 2010 Microchip Technology Inc. PIC18FXXK80 FAMILY ENHANCED UNIVERSAL TABLE 22: EUSART COMPARISONS SYNCHRONOUS ASYNCHRONOUS Feature Description PIC18FXX80 PIC18FXXK80 RECEIVER TRANSMITTER
in „Umstieg von PIC18F4620 auf PIC18F46K20“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_SJEP120R100_rev2.1.pdf
Carbide PRELIMINARY SJEP120R100 Normally-OFF Trench Silicon Carbide Power JFET Product Summary BV 1200 V DS Features: R DS(ON)max 0.100 Ω - Compatible with Standard Gate Driver ICs ETS,typ 170 µJ - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
B--0193_DS18B20_Nr27_29_30_31_Rest32_33_34_b.h
char temp30_lesen(void); unsigned char temp31_lesen(void); //unsigned char temp33_lesen(void); int ds18b20_nr27_lesen(void); int ds18b20_nr29_lesen(void); int ds18b20_nr30_lesen(void); int ds18b20_nr31_lesen(void); //void temp30_ausgeben(void); //void temp31_ausgeben(void); //void temperatur_messen(void
in „Sende/Empfangsvorgang mittels nur 1St. µC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AVRnDxBoard.pdf
PC0 PC0 XTAL32K2/PF1 17 44 XTAL32K1 0R B PC1 18 PC1 XTAL32K1/PF0 PF1 B PC2 PC2 JP4 19 43 VDDA PC3 22 PC3 PE7 42 PE7 PF0 JP7 C12 PC4 PC4 PE6 PE6 Y2 23 41 JP5 PC5 24 PC5 PE5 40 PE5 C11 8p2 8p2 PC6 PC6 PE4 PE4 25 39 JP8 PC7 PC7 PE3 38 PE3 REF PD7E PE2 PE2 RTC EXT CLOCK 26 37 U2 PD0 27 PD0 PE1 36 PE1 VDDA
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PDF
PI4IOE5V9555.pdf
Br + Cl) and <1000ppm antimony compounds. PI4IOE5V9555 www.diodes.com August 2021 Document Number DS41303 Rev 1-2 1 ©Diodes Incorporated PI4IOE5V9555 Pin Configuration Figure 1. TSSOP-24 (Top View ) Figure 2. TQFN 4x4-24 (Top View ) Pin Description Pin Name Type Description TSSOP24 TQFN24 1 22 INT O
in „Schachbrettposition Erkennung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
s35i_c35i_m35i_atc_commandset_v01.pdf
outgoing barring services "AC" All incoming barring services "PN" Network personalization (GSM 02.22) "PC" Corporate personalization (GSM 02.22) "PU" Network subset personalization (GSM 02.22) "PP" Service provider personalization (GSM 02.22) "PF" Phone locked to very first inserted SIM Write command
in „Problem: Siemens C35 per Mikrocontroller steuern funktioniert nicht?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
s35i_c35i_m35i_atc_commandset_v01.pdf
outgoing barring services "AC" All incoming barring services "PN" Network personalization (GSM 02.22) "PC" Corporate personalization (GSM 02.22) "PU" Network subset personalization (GSM 02.22) "PP" Service provider personalization (GSM 02.22) "PF" Phone locked to very first inserted SIM Write command
in „AVR an Handy C35“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AT_commandset.pdf
outgoing barring services "AC" All incoming barring services "PN" Network personalization (GSM 02.22) "PC" Corporate personalization (GSM 02.22) "PU" Network subset personalization (GSM 02.22) "PP" Service provider personalization (GSM 02.22) "PF" Phone locked to very first inserted SIM Write command
in „Simens S 35; AT-Befehle“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM61.pdf
Thermal Resistance Thermal Time Constant Thermal Response in Junction to Air Still Air with Heat Sink DS012897-3 DS012897-4 DS012897-5 Thermal Response Thermal Response in Still in Stirred Oil Bath Quiescent Current with Heat Sink Air without a Heat Sink vs. Temperature DS012897-6 DS012897-8 DS012897-9
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P2804BDG.pdf
25 CC Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage V DS 40 V Gate-Source Voltage V GS ±20 V Continuous Drain Current T C 25 °C I 10 T = 100 °C D 8 C A Pulsed Drain Current I 40 DM T = 25 °C 32 Power Dissipation C P W T = 100 °C D 22 C Operating Junction &
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP2551.pdf
Temperature, SN = Plastic SOIC (150 mil Body) 8-lead SOIC package. © 2010 Microchip Technology Inc. DS21667F-page 21 MCP2551 NOTES: DS21667F-page 22 © 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
in „MCP2551 Standby Mode wenn AVR im Power down Modus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Transistor_Dual_PushPull_ZXTC2045E6.pdf
junction to solder-point (at the end of the collector lead). 13. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTC2045E6 2 of 6 March 2015 Document Number: DS33645 Rev: 3 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXTC2045E6 Thermal Characteristics and
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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STA508.pdf
6 100nF 100nF 11 1µF TH_WAR 28 OUT1B C21 TH_WAR 10 100nF IN1B 30 OUT1B L19 22µH IN1B V 21 M4 13 GND1B DD VDD 22 VSS 33 REGULATORS 7 VCC2A VSS 34 C58 C53 M17 C32 100nF 100nF V CCIGN 8 1µF L113 22µH 35 C60 9 OUT2A C110 100nF V CCIGN 100nF 36 M15 OUT2A C109 IN2A 6 GND2A 330pF R103
in „Heimkino ( Harman Hs 250 defekt )“ · Analoge Elektronik und Schaltungstechnik ·
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21425b.pdf
arising from such other countries. use or otherwise. Use of Microchip’s products as critical com- dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, ponents in life support systems is not authorized except with FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, express written approval by Microchip.
in „Problem mit dem TC4469“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ART2K0FE_2K0FES_2K0FEG.pdf
drain-source breakdown voltage V GS = 0 V; D = 5.5 mA 203 208 - V V GS(th) gate-source threshold voltage V DS = 20 V; D = 550 mA 1.5 2.1 2.5 V I drain leakage current V = 0 V; V = 65 V - - 2.8 A DSS GS DS IDSX drain cut-off current V GS = VGS(th)+ 3.75 V; - 77 - A V = 20 V DS IGSS gate leakage current V GS
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „genauer TIMER“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „RTC DS 1302“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl1404.pdf
contact S Ciss Input Capacitance ––– 6590 ––– VGS = 0V C Output Capacitance ––– 1710 ––– pF V = 25V oss DS Crss Reverse Transfer Capacitance ––– 350 ––– ƒ = 1.0MHz, See Fig. 5 C Output Capacitance ––– 6650 ––– V = 0V, V = 1.0V, ƒ = 1.0MHz oss GS DS Coss Output Capacitance ––– 1510 ––– VGS = 0V, VDS= 32V,
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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viper20.pdf
RegulationPoint Figure 2: UndervoltageLockout DD ICOMP Slope = IDD ICOMPHI Gm in mA/V IDD0 V DD V DDhyst V DS= 70 V 0 Fsw = 0 V DD V DDoff V DDon ICOMPLO IDDch V DDreg FC00150 FC00170 Figure3: TransitionTime Figure 4: ShutDown Action VOSC D t VCOMP tDISsu 10%Ipeak t V DS VCOMPth t 90%V D ID 10%V D t t tf tr
in „Besonders sparsame Standby-Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MBI5026.pdf
simultaneously, the actual package power dissipation is P (act) = (I x V ) + (I x Duty D DD DD OUT x V DS x 16). Therefore, to keep P (act) ≤ P (max)D the allowableDmaximum output current as a function of duty cycle is: IOUT = { [ (Tj – Ta) / R th(j-a)] – (I DD x V )DD / V DS / Duty / 16, where Tj = 150°
in „Vorschläge für Led-Treiber?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MBI5026.pdf
simultaneously, the actual package power dissipation is P (act) = (I x V ) + (I x Duty D DD DD OUT x V DS x 16). Therefore, to keep P (act) ≤ P (max)D the allowableDmaximum output current as a function of duty cycle is: IOUT = { [ (Tj – Ta) / R th(j-a)] – (I DD x V )DD / V DS / Duty / 16, where Tj = 150°
in „TPIC6B595N Cascade Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Tiny15L.pdf
) .020(.508) 10 ATtiny15L 1187DS–12/01 Atmel Headquarters Atmel Product Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway 1150 E. Cheyenne Mtn. Blvd. San Jose, CA 95131 Colorado Springs, CO 80906 TEL (408
in „Frequenzschalter“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Tastatur.asm
Programmierfortschritt .def CT2 =r20 .def Adresse = r21 ; Einlesespeicher für Adressbyte .def C1 =r22; Count1 in BitH ;.def Komma = r22 ;Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS; kopiert aus Steuer .def Steuer = r23 ; Bit2 gesetzt=Minus; ; Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10
in „Hausbus für Meß- und Steueraufgaben mit Attiny“ · Haus & Smart Home ·
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PDF
564932.pdf
–30 — — V ID= –10 mA, V GS = 0 voltage Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 A, V DS0 voltage Gate to source leak current I — — ±10 A V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 A V = –25 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) –1.0 — –2.5 V ID= –1 mA, V DS–10 V 1 Static drain to source on stateRDS(on) — 0.1 0.14 ½ ID= –4 A, VGS = –10 V* 1 resistance — 0.15 0.22 ½ ID= –4 A, VGS = –4 V* 1 Forward transfer admittance |yfs 4 6 — S ID= –4 A, VDS –10 V* Input
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APT10050B2VR_B.pdf
°C) DS DSS GS C 250 I Gate-Source Leakage Current (V = ±30V, V = 0V) ±100 nA GSS GS DS V GS(th) Gate Threshold Voltage (V = V , I = 2.5mA) 2 4 Volts DS GS D CAUTION: These Devices are Sensitive to Electrostatic
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
JMTK4004A.pdf
Application 40V,120A Load Switch RDS(ON)4.3mΩ @ V GS= 10V PWM Application R <7.5mΩ @ V = 4.5V DS(ON) GS Power management Lead free and Green Device Available Excellent DS(ON)nd Low Gate Charge 100% UIS TESTED! Lead free product is acquired 100% ΔVds TESTED! TO-252(DPAK) top view Marking
in „Bauteil Identifikation SMD erwünscht => MosFet?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TMC4671-LA_datasheet.pdf
TMC4671 Datasheet • IC Version V1.3 | Document Revision V2.08 • 2022-July-26 107 / 153 0: off 1: on GPIO_dsADCI_CONFIG[1] bit(1) SEL_nGPIO_dsADCS_A 0: off 1: on GPIO_dsADCI_CONFIG[2] bit(2) SEL_nGPIO_dsADCS_B 0: off 1: on GPIO_dsADCI_CONFIG[3] bit(3) SEL_GPIO_GROUP_A_nIN_OUT 0: off 1: on GPIO_dsADCI_CONFIG[4]
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Datei
PLC-LOX.txt
digital inputs 17-24 8 analog input 1 0-256 9 analog input 2 0-256 10 service - reset (bit 0) 11 1st DS2438 Temp (value multiplied by 100) 12 1st DS2438 Vad (value multiplied by 100) 13 1st DS2438 Vsens (value multiplied by 100) - 39 DS2438 values (up to 10 sensors) 40-50 DS18B20 Temperature (up to 10
in „1 Wire auf 2 GPIO pins“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TPH1R104PB_Datasheet.pdf
Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: DS(ON) = 0.95 mΩ (typ.) (GS = 10 V) (4) Low leakage current: IDSS= 10 µA (max) (V DS = 40 V) (5) Enhancement mode: V th= 2.0 to 3.0 V DS = 10 V, D = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
in „MOSFET's umgekehrt betrieben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPH1R104PB_datasheet_en_20181228.pdf
Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: DS(ON) = 0.95 mΩ (typ.) (GS = 10 V) (4) Low leakage current: IDSS= 10 µA (max) (V DS = 40 V) (5) Enhancement mode: V th= 2.0 to 3.0 V DS = 10 V, D = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·
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PDF
Prime_Sense_DevKit_V2_reduced_size.pdf
IO_L15P_SM13P_11 P32 P32 IO_L15P_14 AG3 AG3 IO_L15P_17 AE29 AE29 IO_L15P_20 M8 M8 IO_L15P_21 AF25 AF25 IO_L15P_22 AF10 AF10 K22 K22 N32 N32 AH3 AH3 AD29 AD29 M7 M7 AF26 AF26 AG10 AG10 IO_L6P_A7_D23_1 J22 J22 IO_L15N_SM13N_11 T33 T33 IO_L15N_14 AL1 AL1 IO_L15N_17 AJ31 AJ31 IO_L15N_20 P7 P7 IO_L15N_21 AE27 AE27 IO_L15N_22 AK9 AK9 IO_L6N_A6_D22_1 K13 K13 IO_L16P_SM12P_11 R34 R34 IO_L16P_14 AM1 AM1 IO_L16P_17 AK31 AK31 IO_L16P_20 N7 N7 IO_L16P_21 AE26 AE26 IO_L16P_22 AK8 AK8 IO_L7P_A5_D21_1 K14 K14 IO_L16N_SM12N_11 R33
in „Preisgünstige elektronische Geräte für reverse-engineering - Part 3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960_O2MICRO.pdf
f V - M g . V V n in 8 0 3 ik a : : : i r i NMCA D I N I t p VV DVE G V E D S O J 5 Figure 1: An 8-22V Application Circuit of OZ960 OZ960-DS-1.6 Page 2 OZ960 I=3uA 1 NDR_B 20 CTIMR NDR_B 2 + OVP I=6uA Protection OVP 2 - hys. PDR_A 19 PDR_A COMP Soft POFF Start ENA 3 + 18 CT ACTIVE ENA "HIGH" V - HF 1
in „Ic´s (unbekannt) für den Tft monitor gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960.pdf
f V - M g . V V n in 8 0 3 ik a : : : i r i NMCA D I N I t p VV DVE G V E D S O J 5 Figure 1: An 8-22V Application Circuit of OZ960 OZ960-DS-1.6 Page 2 OZ960 I=3uA 1 NDR_B 20 CTIMR NDR_B 2 + OVP I=6uA Protection OVP 2 - hys. PDR_A 19 PDR_A COMP Soft POFF Start ENA 3 + 18 CT ACTIVE ENA "HIGH" V - HF 1
in „BenQ FP71Bildschirm fällt nach einiger Zeit aus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960.pdf
f V - M g . V V n in 8 0 3 ik a : : : i r i NMCA D I N I t p VV DVE G V E D S O J 5 Figure 1: An 8-22V Application Circuit of OZ960 OZ960-DS-1.6 Page 2 OZ960 I=3uA 1 NDR_B 20 CTIMR NDR_B 2 + OVP I=6uA Protection OVP 2 - hys. PDR_A 19 PDR_A COMP Soft POFF Start ENA 3 + 18 CT ACTIVE ENA "HIGH" V - HF 1
in „Monitor defekt!“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
J-FET_J112.PDF
40 40 40 V G DS (BR)GSS Gate-source cut-off voltage V = 5 V; I = 1 A −V min. 3 1 0.5 V DS D GS off max. 10 5 3 V Drain-source on-state resistance V = 0.1 V; V = 0 R max. 30 50 100 DS GS DSon July 1993 3 Philips Semiconductors
in „J-FET J112 als Konstantstromquelle: Wie berechnen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
162537-da-01-en-IRF_9540_N.pdf
Vs. Temperature IRF9540N 3000 V = 0V, f = 1MHz 20 I = -11A GS D Ciss= C gs + Cgd , Cds SHORTED ) V DS = -80V Crss= C gd ( 2500 Coss= C ds + Cgd e16 V DS = -50V g V DS = -20V F l p2000 o e C iss V c c12 n u i1500 o a - p t a C oss e 8 ,1000 a C G C rss , S4 500 VG - FOR TEST CIRCUIT SEE FIGURE 13 0 A
in „iMax B6 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203npbf.pdf
On-Resistance mΩ GS D 10 VGS= 4.5V, D = 48A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 73 S VDS= 25V, D = 60A 25 V = 30V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 250 VDS= 24V, VGS = 0V, J = 125°C Gate-to-Source Forward Leakage 100 V = 16V IGSS
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-9010.PDF
space −14 VDD (8.86 × 10 [F/cm]); CB is epitaxial layer background concentration [atoms / cm ]; DF I V DS is drain−to−source voltage; and O C C fB is diode potencial. RG gd1 d G As shown in the equation above, V DS >>f CBdecdsases VGG Cgs Ǹ as V DS increases with the relationship of C ds1ń V . DS Characteristics
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BST-BMP180-DS000-09-2.pdf
BMP180 Data sheet Document revision 2.5 Document release date 5 April 2013 Document number BST-BMP180-DS000-09 Technical reference code(s) 0 273 300 244 Notes Data in this document are subject to change without notice. Product photos and pictures are for illustration purposes only and may differ from the
in „BMP180 Luftdruck Sensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2937.pdf
Transient Response Ripple Rejection DS011280-13 DS011280-14 DS011280-15 Output Impedance Maximum Power Maximum Power Dissipation Dissipation (TO-220) (TO-263) (Note 2) DS011280-16 DS011280-17 DS011280-18 5 www.national.com 7 3 9 Typical Performance Characteristics (Continued) 2 M L Low Voltage Behavior Low Voltage Behavior Low Voltage Behavior DS011280-19 DS011280-20 DS011280-21 Output at Voltage Output at Voltage Extremes Output Capacitor ESR Extremes DS011280-24 DS011280-22 DS011280-23 Peak Output Current DS011280-25 Typical Application DS011280
in „Minimale Hardware zum Auto CAN-Bus abhören“ · Mikrocontroller und Digitale Elektronik ·
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PDF
176001-da-01-en-ic_lm317t.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063