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Datei
stm32f4x7_eth_bsp.c
Ethernet MAC/DMA */ ETH_MACDMA_Config(); /* Get Ethernet link status*/ if(ETH_ReadPHYRegister(lan8710a_phy_addr, PHY_SR) & PHY_Linked_Status) { EthStatus |= ETH_LINK_FLAG; } /* Configure the PHY to generate an interrupt on change of link status */ Eth_Link_PHYITConfig(lan8710a_phy_addr); /* Configure
in „STM32-E407 Ethernet / UDP“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sihfr014.pdf
- 11 ID= 10 A, V DS= 48 V, Gate-source charge Qgs VGS = 10 V see fig. 6 and 13b - - 3.1 nC Gate-drain charge Q gd - - 5.8 Turn-on delay time td(on) - 10 - Rise time r VDD = 30 V, D = 10 A, - 50 - R g 24 Ω, R =D2.7
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
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Bluetooth_DBM01.pdf
interface; RX pin 8 TX/P1.6 UART port UART interface; TX pin 9 DP USB port USB positive +, no function 10 DM USB port USB positive -, no function 11~12 P1.5~P1.4 Digital I/igital Input/Output pin 13 SLEEP/P1.3 Digital effIective, the ul-e will beforced to enter into sleep mode even there is data flowat UART
in „BLE Sony koppelt Samsung nicht?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
16Mb, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb LowPowerConsumption - Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz -Lowactiveprogrammingcurrent:20mA(max.) - Low active erase current: 20mA (max.) - Low standby current: 20uA (max.) -Deeppower-downmode1uA(typical
in „MX25L160(5AM2C) neu beschreiben? Gibt es eine DIY Lösung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
abc.pdf
Steuersignalen 1-S und P03 17 A 1 e"S %180 0 R/W des Einchip-M ikrorechner s p04 2 Al 13 8 C5 % 1000 lassen sich die standardisierte n P05 A 14 18 CS %0800 Freigabesignale und W E 18 %48) 0 leicht erzeugen (Abb 00 CS . 56). Sie DS8205
in „DDR-µC, maskenprogrammiert, "fremd verwendbar ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MX25L6405D__3V__64Mb__v1.5.pdf
, 25s(typ.) for 32Mb, and 50s(typ.) for 64Mb • Low Power Consumption - Low active read current: 25mA(max.) at 86MHz, 20mA(max.) at 66MHz and 10mA(max.) at 33MHz - Low active programming current: 20mA (max.) - Low active erase current: 20mA (max.) - Low standby current: 20uA (max.) - Deep power-down
in „FLASH Memory Chip im Lenovo X200 von 8 MB auf 16 MB vergroessern“ · PC Hard- und Software ·
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PDF
FA_SIM800L_3.pdf
AREF 30 2 TEMP_DATA 2 2464_BATT_HOLDER V 12 PD0 31 PIN_0 3 2 TEMP_DATA PB0 PD1 PIN_1 Reed GND P1 150 13 PB1 PD2 32 REED TEMP 865-XC6206P362MR-G 14 PB2 PD3 1 LED1 R2 15 PB3 PD4 2 UC_RXD GND Red 16 PB4 PD5 9 UC_TXD GND 120 17 PB5 PD6 10 SIM_SWITCH GND 7 11 LED2 R3 8 PB6 PD7 Green PB7 3 GND 5 GND_2 21 GND
in „IoT mit ATMEGA und SIM800L, Bienen Beute,“ · Mikrocontroller und Digitale Elektronik ·
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BB_Schem_75839_b.pdf
A12 B12 CSI_CTL2 C12 GND GND A13 12 B13 12 C13 12 VCC A14 13 VCC B14 13 VCC C14 13 A15 14 B15 14 C15 14 A16 15 B16 15 C16 15 16 16 16 GND VME 32x3 VME 32x3 VME 32x3 Extension Socket 1 C C PE2A PE2B PE2C
in „PHILIPS VP5500 VoIP Telefon bei Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM400_Datasheet__2_.pdf
PCM - - 0.4 VDC Output High Voltage UART, GPIO, PCM VDD-0.4 - - Average Current Consumption Receive DM1 - 114 mA - Distribution: DataSoft Systems AB www.datasoft.se sales@datasoft.se Manufactured by: LM Technologies Ltd 2008-02-20 3 (15) LM400 – Bluetooth Module General Radio Characteristics – Basic Data
in „Bluetooth LM400 Konfiguration“ · Mikrocontroller und Digitale Elektronik ·
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RCDN9.pdf
AC230V HS92 C C D920 L923 R985 R984 R983 R982 R981 R980 C948 R977 R978 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 51 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A A MAIN (A SIDE) (Except E1C) g MAIN (B SIDE) (Except E1C) g D-AMP (A SIDE) D-AMP (B SIDE) WF70 WF71 CWE5202080A 7 7 2 9 C R R706 N 6 3 + N - R709
in „Hifi Kompaktanlage mit Bluetooth Sender ausstatten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PSMN5R5-60YS.pdf
GS = 20 kΩ - 60 V VGS gate-source voltage -20 20 V D drain current T mb = 100 °C; see Figure 1 - 74 A [1] T mb = 25 °C; see Figure 1 - 100 A I peak drain current t ≤ 10 µs; pulsed; T = 25 °C; see Figure 3 - 418 A DM p mb Ptot total power dissipation T mb = 25 °C; see Figure 2 - 130 W Tstg storage temperature
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Datei
M490_verzeichnisstruktur.txt
mp3\123\MP3 Player\p000_1.64 windows\application\mp3\123\MP3 Player\p000_sp.64 windows\application\a8\A8 windows\application\a12\A12 windows\application windows\Resources windows\Resources\mp3 windows\application\a12 windows\application\a8 windows\application\mp3 windows\application\picture windows\
in „MILLENIUM M490 ARACDE EXTREME Kompatibilität“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pnFET_Si1551.pdf
Forward Voltage V SD V S = - 0.23 A,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Forward Voltage V SD V S = - 0.23 A,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
Forward Voltage V SD V S = - 0.23 A,GS= 0 V P-Ch - 0.8 - 1.2 b Dynamic N-Ch 0.72 1.5 Total Gate Charge Qg N-Channel P-Ch 0.52 1.8 V DS= 10 V, GS = 4.5 VD I = 0.29 A N-Ch 0.22 Gate-Source Charge Q gs nC P-Channel P-Ch 0.11 N-Ch 0.13 Gate-Drain
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUZ11.pdf
Voltage (GS= 20 k ) 50 V V GS Gate-source Voltage 〉 20 V o ID Drain Current (continuous) atcT = 25 C 33 A DM Drain Current (pulsed) 134 A P tot Total Dissipation atcT = 25 C 90 W o Tstg Storage Temperature -65 to 175 C T Max. Operating Junction Temperature 175 oC j DIN HUMIDITY CATEGORY (DIN 40040) E IEC
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RJH60F5DPQ.pdf
0.1 n P PW r 1 shot pulse DM D = T T 0.020.01 e PW l T a0.01 r o 10 μ 100 μ 1 m 10 m 100 m 1 10 N Pulse Width PW (s) Normalized Transient Thermal Impedance vs. Pulse Width (Diode) t ( γs 10 Tc = 25°C c a d p I 1 D = 1 a m 0.5 e
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
uA710.pdf
---1 V -1.0 --- --- --- - ' t 1 1300 500 -5.0 -3.0 -1.0 1.0 3.0 5.0 -60 -20 20 60 100 140 10 11 12 13 14 INPUTVOLTAGE - mV TEMPERATURE - °c POSITIVESUPPLYVOLTAGE - V INPUT BIAS CURRENT INPUT OFFSET CURRENT COMMON MODE REJECTION RATIO AS A FUNCTION OF AS A FUNCTION OF AS A FUNCTION OF AMBIENT TEMPERATURE
in „Nun ich auch mal - Suche Datenblätter zu ICs“ · Mikrocontroller und Digitale Elektronik ·
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73493.pdf
A 33 A Pulsed Drain Current DM 240 TC = 25 °C 110 Continuous Source-Drain Diode Current IS b, c TA = 25 °C 10 I Avalanche Current L = 0.1 mH AS 75 Single-Pulse Avalanche Energy E AS 281 mJ TC = 25 °C 375
in „Messungen mit DMM Dual-Slope Verfahren am PMOS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL3713.pdf
V D @ TC= 25°C Continuous Drain CurreGS, V0V 260h I @ T = 100°C Continuous Drain Current@ 10V 180h A D C GS DM Pulsed Drain Current 1040h P @T = 25°C Maximum Power Dissipation 330 D C W PD@Tc = 100°C Maximum Power Dissipation 170 Linear Derating Factor 2.2 W/°C TJ,STG Junction and Storage Temperature
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PMV15UNEA.pdf
25 °C - 20 V DS j VGS gate-source voltage -8 8 V D drain current V GS = 4.5 V; amb = 25 °C [1] - 7 A V GS = 4.5 V; amb = 100 °C [1] - 4.4 A DM peak drain current T amb= 25 °C; single pulse; p ≤ 10 µs - 28 A Ptot total power dissipation T amb= 25 °C [2] - 610 mW [1] - 1.4 W T sp= 25 °C - 8.3 W Tj junction
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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irfh5300pbf.pdf
Delay Time ––– 26 ––– VDD = 15V, VGS= 4.5V tr Rise Time ––– 30 ––– ID= 50A t Turn-Off Delay Time ––– 31 ––– ns R =1.8Ω d(off) G tf Fall Time ––– 13 ––– See Fig.15 Ciss Input Capacitance ––– 7200 ––– VGS = 0V Coss Output Capacitance ––– 1360 ––– pF VDS = 15V Crss Reverse Transfer
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
156346062-STi7105.pdf
Assignment Voltage Type Description Digital 1.2 V F7 G6 G7 G27 H28 H29 ) M14 n M15 t l M18 o M19 o e N15 a N16 t N17 a l e i N18 S t P12 y n o P16 VDD1V2 1.2 Digital Digital power 1.2 V core power t e P17 n d o f P21 - R12 i n R13 n o i R20 n C R21 C e R28 i T13 a T14 c i U13 a U14 r n V12 I V13 V16 V20 8065505
in „Motorola Vip19x0 (Big brother of Vip1710)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si4946ey.pdf
V 20 A VGS = 10 V,DI = 4.5 A 0.045 0.055 Drain-Source On-State Resistance rDS(on) W VGS = 4.5 VD I = 3.9 A 0.055 0.075 Forward Transconductance gfs VDS= 15 V,DI = 4.5 A 13 S Diode Forward Voltage VSD IS= 2 A, GS = 0 V 0.9 1.2 V a Dynamic Total Gate Charge Qg 19 30 Gate-Source Charge Q gs V DS= 30 V, GS = 10 V,DI = 4.5 A 4 nC Gate-Drain Charge Q gd 3 Gate Resistance Rg 1 3.6 W Turn-On Delay Time d(on) 13
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
Base2500 1 Min.) Volts Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 13 lb•in 1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471 4 temperature. StartingjT = +25°C, L = 235 HG R = 25 , PeLk I = 175A 2 Pulse Test: Pulse width < 380 S,
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PDF
PIC18FXX80_to_PIC18FXXK80_Migration_Guide.pdf
Register COMSTAT COMSTAT CAN I/O Control Register CIOCON CIOCON CAN TX2 Data Source (64-pin only) N/A TX2SRC (CIOCON<7>) CAN TX3 Enable (64-pin only) N/A TX2EN (CIOCON<6>) CAN Control Register CANCON CANCON CAN Status Register CANSTAT CANSTAT Receive Buffer Data Register n = <0,1>, m = <0-7> RXBnDm RXBnDm
in „Umstieg von PIC18F4620 auf PIC18F46K20“ · Mikrocontroller und Digitale Elektronik ·
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heag.pdf
elektrische Energie, (Jahresarbeit) und bezieht dieses auf die Nennleistung P , dannn erhält N Bild 13: Jährliche Betriebsstunden einer PV-Anlage man die Anzahl von Stunden Seite 5 1000 Anlage mit Trafo 800 Anlage ohne Trafo Pmin0,15 nenn 600 a ~ h 400 200 Bild 16a: Schaltmodell der einphasigen Halbbrücke
in „Wirkungsgrad = Spannungsabfall?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm35.pdf
is easy (see Figure 12). The tolerance of capacitance can be improved with a series R-C damper from output to ground (see Figure 13). When the LM35 device is applied with a 200-Ω load resistor as shown in Figure 16, Figure 17, or Figure 19, the device is relatively immune to
in „Signalkonverter Ladegerät“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm35.pdf
is easy (see Figure 12). The tolerance of capacitance can be improved with a series R-C damper from output to ground (see Figure 13). When the LM35 device is applied with a 200-Ω load resistor as shown in Figure 16, Figure 17, or Figure 19, the device is relatively immune to
in „Linearisierung NTC und Anpasssung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2206071616_BL-Shanghai-Belling-BLM3404_C3032968.pdf
Tape width Quantity 3404 BLM3404 SOT-23 Ø180mm 8 mm 3000 units Absolute Maximum Ratings (T =25℃unlesA otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous ID 5.8 A Drain Current-PulsedNote 1) DM 20 A Maximum Power Dissipation
in „Betrieb von MOSFETS bei maximalstrom?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCU_-_HR8P506_Datasheet_e.pdf
1 1 1 1 1 1 1 9 A A A A A A A A P P P P P P P P 4 3 2 1 0 9 8 7 2 2 2 2 2 1 1 1 5 6 PA8/RXD1/T16N1_0/AN14/COM5 PA22/RXD0/SEG8 2 1 PA23/TXD0/SEG9 2 1 PA7/T16N0_1/AN13/COM6 PA24/MOSI1/RXD0/T16N1_0/SEG10 2 1 PA6/T16N0_0/
in „Re - Programmierung eines Cortex M0“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STM32F405-7x.pdf
OTG_FS_ID/DCMI_D1/ EVENTOUT USART1_CTS / CAN1_RX 44 C1 70 103 C15 122 PA11 I/O FT / TIM1_CH4 / OTG_FS_DM/ EVENTOUT USART1_RTS / CAN1_TX/ 45 C2 71 104 B15 123 PA12 I/O FT TIM1_ETR/ OTG_FS_DP/ EVENTOUT PA13 46 F8 72 105 A15 124 (JTMS-SWDIO) I/O FT JTMS-SWDIO/ EVENTOUT 47 B1 73 106 F13 125 V S CAP_2 - E7 74
in „STM32 DCMI (Kamera) Pinbelegung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS89.pdf
voltage (DC) − 200 V VGSO gate-source voltage (DC) open drain − ±20 V D drain current (DC) − 300 mA DM peak drain current − 1.2 A Ptot total power dissipation Tamb≤ 25 °C; note 1 − 1 W T storage temperature −55 +150 °C stg Tj junction temperature − 150 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS
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PDF
R1610C.PDF
D 50 A13/SAD2 bus. The address bus is in a high-impedance state during a bus 51 A12/SAD1 hold or reset. 66 A11/SAD0 SAD [7:0]: The combination pins with addresses and data. They 80 A10/MA10 I/O are designed
in „Hilfe JTAG für IP Webcam ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AS5048_Datasheet.pdf
4: TSSOP14 Pin Configuration CSn 1 14 PWM SDA 1 14 PWM CLK 2 A 13 GND SCL 2 A 13 GND S S MISO 3 5 12 VDD3V A2 3 5 12 VDD3V 4 4 MOSI 4 8 11 VDD5V A1 4 8 11 VDD5V TEST 5 A 10 TEST TEST 5 B 10 TEST TEST 6 9 TEST TEST 6 9 TEST TEST 7 8 TEST TEST 7 8 TEST Figure 5: TSSOP14
in „Drehwinkelmessung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ewm-pico160-cel-puls.pdf
Maximale Netzimpedanz (@PCC) Zmax XXX mΩ [1] Frequenz 50/60 Hz Netzsicherung (Schmelzsicherung träge) 20 A [2] Primärdauerstrom (100 %) 20 A 13 A Netzanschlussleitung H07RN-F3G2,5 maximale Anschlussleistung 7,3 kVA 4,9 kVA empfohlene Generatorleistung 10 kVA cos / Wirkungsgrad 0,99 / 83 % Umgebungstemperatur
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PDF
ssr2n60a.pdf
12 35 VDD300V,I =DA, r Rise Time -- 15 40 td(off) Turn-Off Delay Time -- 41 90 ns RG =18Ω See Fig 13 f Fall Time -- 16 40 OO 5 Q g Total Gate Charge -- 15 21 VDS480V,V =GSV, Q nC gs Gate-Source Charge -- 2.6 -- D =2A Qgd Gate-Drain( “Miller”) Charge -- 6.7 -- See Fig 6 & Fig 12 OO 5 Source-Drain Diode
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6302.pdf
. 6 and 9 d(on) Turn-On Delay Time 13 VDD = -10V tr RiseTime 18 ID= -0.61A ns d(off) Turn-Off Delay Time 22 RG= 6.2Ω f FallTime 22 RD= 16Ω, See Fig. 10 Ciss Input Capacitance 97 VGS = 0V Coss Output Capacitance 53 pF VDS = -15V Crss Reverse
in „LCD-Hintergrundbeleuchtung dimmen (PWM)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APEEL_JEDEC.pdf
Thu 12-18-1997 17:25:59 APEEL FILE: PEEL18CV8 Display Driver 3 IC 7 DESIGNER: R.S. REV:0 18.12.97 A.G. -geprueft und Testvektoren jetzt funktionsfaehig ! -Vext kommt low-aktiv ! DATE: 12.08.1997 *DF PEEL *DD 18CV8 *DM ICT *QP20 *QF2696 *F0 * N Output Pin 19 * L0000 1111 1111 1011 1111 1111 1111 1111
in „Suche Infos zu ICT Peel 18CV8P 35NS Software JDEC File erzeugen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSN10.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors Product specification April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode
in „Pegelwandler lässt TWI erfrieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APPCHP6.PDF
Load Three types of circuit are commonly employed to suppress Varistor Snubber voltage transients - a snubber network across the device, Fig. 13 Triac protection a choke between the power device and external circuit or an overvoltage protection such as a varistor. Thefollowingequationscanbeusedtocalculatethevalues
in „Motorsteuerung verbessern bei el. Nähmaschine“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APPCHP6.pdf
Load Three types of circuit are commonly employed to suppress Varistor Snubber voltage transients - a snubber network across the device, Fig. 13 Triac protection a choke between the power device and external circuit or an overvoltage protection such as a varistor. Thefollowingequationscanbeusedtocalculatethevalues
in „defekter Drehzahlsteller eines Schwingschleifers“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APPCHP6.PDF
Load Three types of circuit are commonly employed to suppress Varistor Snubber voltage transients - a snubber network across the device, Fig. 13 Triac protection a choke between the power device and external circuit or an overvoltage protection such as a varistor. Thefollowingequationscanbeusedtocalculatethevalues
in „AQH2213 SSR Snubber dimensionieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1912111437_Vishay-Intertech-VS-10BQ015HM3-5BT_C413465.pdf
www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1 A T = 25 °C 0.33 2 A J 0.39 Maximum forward voltage drop VFM (1) V See fig. 1 1 A 0.21 TJ = 125 °C 2 A 0.29 Maximum reverse leakage current TJ= 25 °C 0.5 See fig. 2 RM V R= Rated V R mA TJ= 100 °C 35
in „1N5817 Schottky Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
bs208.pdf
drain-source voltage − 200 V ±V gate-source voltage open drain − 20 V GSO −D drain current DC − 0.2 A −DM drain current peak value − 0.6 A P total power dissipation T = 25 °C − 0.83 W tot amb Tstg storage temperature range −65 +150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL PARAMETER
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FGA5065ADF.pdf
- uJ ts ©2015 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FGA5065ADF Rev. 1.0 F G A 5 Electrical Characteristics of the IGBT (Continued) 0 5 Symbol Parameter Test Conditions Min. Typ. Max Unit A D Qg Total Gate Charge - 72.2 - nC F Q Gate to Emitter Charge VCE = 400 VC I = 50 A, - 13.5
in „Inverter Schweißgerät, Alternative IGBTs kompatibel? (Datenblätter inside)“ · Analoge Elektronik und Schaltungstechnik ·
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MTW8N60E.PDF
withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well
in „Identifizierung Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Devices.txt
TP06SQ 14 RES10 14 QG5860 14 MA04-2 14 MA04-1 14 L-EU0204/5 14 IRFP240 14 CPOL-EU153CLV-0405 14 C1206 13 NC 13 LEDCHIP-LED0805 13 JP1Q 13 IRF540 13 HD-H103 13 ELC-5 13 CRYSTALHC49U70 13 CPOL-EUSMCC 13 CPOL-EUB45181A 13 B-DIL 13 1N4446 12 TRIM_EU-B25P 12 TLC5940-PWPOTV 12 SJ 12 RESEU-18 12 R 12 C-2.5-5/2
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
MPT2P50E.pdf
Gate–Source Voltage – Continuous V GS 〉 20 Vdc – Non–Repetitivep(t 10 ms) VGSM 〉 40 Vpk TO–220AB CASE 221A Drain Current – Continuous ID 2.0 Adc STYLE 5 MTP2P50E Drain Current – Continuous @ 100⋅C ID 1.6 LLYWW Drain Current – Single Pupse (t 10 s) DM 6.0 Apk 1 1 3 Total Power Dissipation PD 75 Watts 2 Gate
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF830.pdf
R = 20 k ) 500 V GS VGS Gate-source Voltage 〉 20 V o ID Drain Current (continuous) at c = 25 C 4.5 A ID Drain Current (continuous) at c = 100 C 2.9 A DM ( ) Drain Current (pulsed) 18 A P Total Dissipation at T = 25 C 100 W tot c Derating Factor 0.8 W/oC dv/dt() Peak Diode Recovery voltage slope 3.5
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·