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PT4515deutsch.pdf
Silicon Technology WWW.CRPOWTECH.COM Seite 5 (Shanghai) Co., Ltd. PT4515HA_DS_Rev CH 1.0 Machine Translated by Google PT4515HA Einzelsegment-Linear-LED-Treiberchip Millimeter Zoll Symbol Mindest Max Mindest Max A2 1.400 1.600 0,055 0,063 B 0,380 0,470 0,015 0,019 b1 0,370 0,430
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IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
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irfiz34n.pdf
On-Resistance 0.04 Ω VGS = 10V, D = 11A V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 6.5 S VDS = 25V, D = 16A 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 250 VDS = 44V, VGS= 0V, TJ= 150°C Gate-to-Source Forward Leakage 100 V = 20V
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DS_SJEP120R100_rev2.1.pdf
Carbide PRELIMINARY SJEP120R100 Normally-OFF Trench Silicon Carbide Power JFET Product Summary BV 1200 V DS Features: R DS(ON)max 0.100 Ω - Compatible with Standard Gate Driver ICs ETS,typ 170 µJ - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No "Tail" Current at
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162537-da-01-en-IRF_9540_N.pdf
Vs. Temperature IRF9540N 3000 V = 0V, f = 1MHz 20 I = -11A GS D Ciss= C gs + Cgd , Cds SHORTED ) V DS = -80V Crss= C gd ( 2500 Coss= C ds + Cgd e16 V DS = -50V g V DS = -20V F l p2000 o e C iss V c c12 n u i1500 o a - p t a C oss e 8 ,1000 a C G C rss , S4 500 VG - FOR TEST CIRCUIT SEE FIGURE 13 0 A
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DIS4.LST
ds 2 *** _________________________^ *** _________________________________________________^ *** ERROR #9 IN 17 (DIS4.ASM, LINE 17): SYNTAX ERROR *** ERROR #9 IN 17 (DIS4.ASM, LINE 17): SYNTAX ERROR 18 19
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01_Sicherungsautomaten.pdf
für SN201) Signalkontakt 1S+1Ö SN201-S 2CSS 200 924 R0001 10495 7 VN 0,040 1 Hilfskontakt/Verbindungsmodul (nur für S 201) SN201-S SN201-IH Hilfskontakt/Verbindungsmodul SN201- IH 2CSS 200 923 R0001 10485 8 VN
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PDF
IRLZ34.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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PDF
irlz34n.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
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PDF
irf7314.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl630.pdf
On-Resistance GS D ––– ––– 0.50 V GS= 4.0V, D = 4.5A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS ,DI = 250µA gfs Forward Transconductance 4.8 ––– ––– S V DS= 50V, D = 5.4A DSS Drain-to-Source Leakage Current ––– ––– 25 µA V DS= 200V, VGS = 0V ––– ––– 250 V DS= 160V, VGS = 0V, J = 125°C GSS
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MapCom.pdf
1 2 3 4 VCC VCC U1U1 U2OU2 GND PIU201 PIU2020NLVCC P02 PID2001PID2002D_G WDII PIU1010 PIU1051D0 ALE PIU2011OE VCC R1R SCKCK 11 PB0 (SS) PA0 (AD0) 50 AD1 LE A 2,2k LED_G0 PI12011PB1 (SCK) PA1 (AD1) PIU49 AD2 AD7 2 19 A7NLA7 A U3U P0 D212
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PDF
IRF7416_datasheet.pdf
1.0 ––– ––– V VDS = VGS, D = -250µA g Forward Transconductance 5.6 ––– ––– S V = -10V, I = -2.8A fs DS D ––– ––– -1.0 VDS = -24V, GS = 0V IDSS Drain-to-Source Leakage Current ––– ––– -25 µA V = -24V, V = 0V, T = 125°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V IGSS Gate-to-Source Reverse
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irsf3010.pdf
ParameterDefinition Min. Typ. Max. Units Test Conditions Vds,clamp Drain to SourceClampVoltage 50 54 — V ds = 10mA — 56 62 ds = 11A, p = 700 S R ds(on) Drain to Source On Resistance — 70 80 Vin= 5V, ds= 4A — 85 — m V = 4V, I = 4A in ds — 53 — Vin= 10V, ds= 4A Idss DraintoSourceLeakageCurrent — — 10 Vds = 12V
in „PIC steuert High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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Installation_Xilinx_ISE_14.7_und_ModelSim_PE_Student_Edition_10.4_auf_Windows_10.pdf
Die Warnungen stören nicht. Die generierten Dateien liegen im folgenden Pfad: > C:\Xilinx\14.7\ISE_DS\ISE\vhdl\mti_pe\10.4a\nt Der Protokollauszug enthält u.a. den Text: WARNING:Compxlib:312 - Output directory 'C:\Xilinx\14.7\ISE_DS\ISE\vhdl\mti_pe\10.4a\nt' does not exist, it will be created. Directory
in „Installation Xilinx ISE 14.7 und ModelSim PE Student Edition 10.4 auf Windows 10“ · FPGA, VHDL & Co. ·
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Datei
Devices.txt
MOC3020M 1 MMC_SOCK 1 MMA7260-CARRIER 1 ML16 1 MINI-USB_SHIELD5P4-32005-501 1 MINI-USB-SCHIELD-32005-201 1 MINI-USB_4P-85-32004-10X 1 MINI-USB-32005-301 1 MINI-USB-32005-201 1 MINI_USB 1 MINI_DIN_6 1 MICROSD_SF-MICROSD 1 MICROMATCH-4 1 MIC2929A 1 MEGA88 1 MEGA8535-P 1 MEGA8515-A 1 MEGA163LP 1 MEGA161P
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PDF
Switch.pdf
. leistung kraft 1 25 100 250 611-DS-0200530 DS-02005 M 0.1 Amp. bei 30VDC 30gf 611-DS-040-02 DS-040-02 N 0.1 Amp. bei 16VDC 30gf 16 2.2 611-DS-080-CPA DS-080-C PA O 0.1 Amp. bei 16VDC 30gf 1.5 611-DS-180RT DS-180 RT P 0.001 Amp. bei 5VDC
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PDF
162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
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PDF
IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
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oncilla_schaltplaene.pdf
5 6 Reserve-Connector 7 8 9 10 11 12 Gleichrichterschaltung CR201 J204 1N4002 MF4 1 2 +35V_UR Zu Analog-Board + C201 3 1000uF 63V 4 SP C C CR202 1N4002 + C202 J205 1000uF 63V MF2 -35V_UR 1 Zu Float-NT-Board 2 CR203 1N4002 J201 +25V_UR MF6 + C203 + C204 SP 2200uF 40V
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
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MINI68.TXT
: DS.W 1; !EBENSO XOUTBUFCTR: DS.B 1; !UND ANZAHL CHECKSUM: DS.B 1; !ALLE BYTES WERDEN AUFSUMMIERT, OHNE CARRY ENDIF; REGLIST: DS.L 15; !D0-A6 SSPTR: DS.L 1; !A7 USPTR: DS.L 1; !USER A7 DS.W 1; !OBERE HAELFTE
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irf9z34n.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-MOSFET_IRF9Z34N.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
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PDF
apple_macbook_pro_a1286_mlb_d1_051-9216_13.3_retina_a1425_820-3462_sch.pdf
UF 10%UF RIO FLEX CONNECTOR H USB_BT 201 2 16V 2 16V 2 16V 2 16V CRITICAL 0201CERM 0201CERM 0201CERM 0201CERM C4420 GND_VOID=TRUE J4410 15PF PLACE_NEAR=J4440.1:2.54MM PLACE_NEAR=J4440.4:2.54MM DF40CG3.0-70DS-0.4V NOSTUFF 1 2 F-ST-SM 72 71
in „Macbook Schaltpläne“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
0.0230.029 V GS= 10V, D = 5.8A R Static Drain-to-Source On-Resistance — 0.0320.046 V GS= 4.5V, D = 4.7A DS(ON) — 0.0420.058 V GS= -10V, D = -4.9A P-Ch — 0.0760.098 V = -4.5V, I = -3.6A GS D V GS(th) Gate Threshold Voltage N-Ch 1.0 — — V V DS= VGS, D = 250µA P-Ch -1.0 — — V DS= VGS, D = -250µA N-Ch — 14 — V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
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LM741.pdf
mode range is ex- r ceeded, as well as freedom from oscillations. Schematic Diagram DS009341-1 Offset Nulling Circuit DS009341-7 © 1999 National Semiconductor CorDS009341 www.national.com Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact
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irlu024n.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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irlu024N.pdf
Vs. Temperature www.irf.com 3 IRLR/U024N 800 15 V GS = 0V, f = 1MHz ID = 11A C iss= C gs + Cgd , C ds SHORTED V = 44V C = C ) DS C rss= C gd + C ( V DS = 28V C oss ds gd e 12 ) 600 iss a F l ( V e e n r 9 t u c 400 C S p oss o a - 6 C t , a C , 200 C S rss G 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) ( n e ) u (
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Datei
Packages.txt
-1 14 B-DIL 14 1X06 14 153CLV-0405 13 TO220V 13 TO126 13 SMC_C 13 R-18 13 PT-10 13 NC 13 ES-5 13 DO201-15 13 CHIP-LED0805 13 B45181A 13 78LXX 12 SJ 12 SA10-21 12 S2XXEX 12 REED 12 R 12 ML10-O 12 JP3Q 12 JP2Q 12 DO13M 12 C2.5/5-2 12 B25P 12 AMP 12 28-HTSSOP-OTV 12 255SB 11 USB-B-H 11 TOBU3 11 SOT89 11
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Datei
Stueckliste.txt
Stückzahl Beschreibung RefBez 1 PIC24FJ/E/H dsPIC33 PIC32 U1 http://www.tme.eu/de/details/pic24fj64ga002p/mikrocontroller-microchip-16-bit/microchip-technology/pic24fj64ga002-isp/# 1 DIP-28 Sockel U1 http://www.tme.eu/de/details/icvt-28p-w/dip-sockel-standard
in „[V] 6x 28pin PIC24FJ/E/H,dsPIC33,PIC32 Testplatine (Verkauft)“ · Markt ·
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PDF
STM32F746G_Discovery.pdf
ARD_D9D TIM2_CH1 PICN7066 GND O PWM/D9 2 PICN60PI2 ARD_D8D PICN7077 GND P D8 1 PICN601 VIN PICN7088 VIN F201-1*10MGF-W1-BA F201-1*08MGF-W1-BA CN44 CN5N5 D7 8 PICN408I3 ARD_D7D ADC3_IN0 ARD_A0A PA0 PICN5011 7 PICN407H6 ARD_D6D TIM12_CH1 ADC3_IN8 ARD_A1A PF10 PICN502 A0 PWM/D6 PICN406A8 ARD_D5D TIM1_CH1 ADC3
in „STM32F7 Discovery Board“ · Mikrocontroller und Digitale Elektronik ·
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FK743M5-XIH6.pdf
D1 PC9 9C NP 9C E14 PC8 PH14 B16 NLC _G4 PH15H T12 VSS M VREFF H743在VOS0（480MHz）工况下，核心电压为1.38V， NL DS 2D01CM1CP NLP 10PIMC10E14 PC9 PH15 PIMCU1 0B16 PIMCU10T12 VSS VREF+ PIMCU10M1 PI IC ?0 4 P II5C? 05 QSPI_BK1_IO0 PF8 CS1 SDMMC1_D2 PC10 PC10 IPC10A13 PC10 PIMC U10U1 VSS VDDLDO最小输入电压为1.62V， GND GND DI
in „STM32H743 mit 32MByte externem SDRAM“ · Mikrocontroller und Digitale Elektronik ·
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sm6t100a.pdf
method 2026 solderable matte tin plated leads Unidirectional Bidirectional SM6T6V8A, SM6T6V8CA, • JESD-201 class 2 whisker test SM6T7V5A, SM6T7V5CA, • IPC7531 footprint SM6T10A, SM6T10CA, • JEDEC registered package outline SM6T12A, SM6T12CA, SM6T15A, SM6T15CA, • IEC 61000-4-4 level 4: SM6T18A, SM6T18CA,
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lm35_Temp.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
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24LC256_32k_I2C-EEPROM.pdf
for 24FC256. 2004 Microchip Technology Inc. DS21203M-page 21 24AA256/24LC256/24FC256 NOTES: DS21203M-page 22 2004 Microchip Technology Inc. 24AA256/24LC256/24FC256 ON-LINE SUPPORT SYSTEMS INFORMATION AND Microchip provides on-line support on the
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On_Chip_Debug_Spec_51242a.pdf
mentioned herein are the property of their respective companies. 2001 Microchip Technology Inc. DS51242A On-Chip Debugger Specification DS51242A 2001 Microchip Technology Inc. ON-CHIP DEBUGGER 12 SPECIFICATION Table of Contents Chapter 1. Overview 1.1 Introduction ...............................
in „PIC12F509 hidden features und "High Flash"“ · Mikrocontroller und Digitale Elektronik ·
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mcp6004.pdf
www.microchip.com/cn) to receive the most current information on our products. 2003 Microchip Technology Inc. DS21733D-page 21 MCP6001/2/4 NOTES: DS21733D-page 22 2003 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
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Datei
sensorhub.asm
; temperaturwert IN lsb push ar_1 ; sichern ldi ZL,low(uart_message*2) ldi ZH,high(uart_message*2) DS_messen_text_output_1_loop: lpm ar_1,Z+ cpi ar_1,0 breq DS_messen_text_output_1_exit sts UART_TX,ar_1 rcall uart_send rjmp DS_messen_text_output_1_loop DS_messen_text_output_1_exit: pop ar_1 ;widerherstellen
in „Controller fällt in (anscheinend) RESET“ · Mikrocontroller und Digitale Elektronik ·
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PDF
at91rm9200-ek.pdf
Mb R9 0R LINK/ACTLED/OP2 13 DS3 DNP R211 NOT INSTALLED 10 PWRDWN CABLESTS/LINKSTS 14 OP2 NRST 40 RESET SD 45 ACT LED 270R R232 GREEN B 3V3 DS5 DNP R208 NOT INSTALLED B R3 DNP DNP DNP 47K R242 10K 3V3 L202 VCCA C230 VCCA VCCA 742792093
in „SD-RAM aus PC für AT91RM9200 (ARM9)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Sheet1.pdf
1 2 3 4 5 6 7 8 NLSA NL2A NL3A NLS4A T3 P3 0 P3 PIT101 PIT102 PIT201 PIT2022 PIT301 PIT302 PIT401 PIT402 A 2N7002 GND 2N7002 GND 2N7002 GND 2N7002 GND A 12 D1D P0 D2D 32CD3 I2 D4D 02D5D5 D2 D6D6 2 D7D7 D2 D8D8 P2 D9D9 I2 D1010 12D111 I0D12D12 LED LED LED LED LED LED
in „Was denkt ihr, ist das noch routbar? (Angefangene Platine)“ · Platinen ·
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PDF
Sheet12.pdf
1 2 3 4 5 6 7 8 NLSA NL2A NL3A NLS4A T3 P3 0 P3 PIT101 PIT102 PIT201 PIT2022 PIT301 PIT302 PIT401 PIT402 A 2N7002 GND 2N7002 GND 2N7002 GND 2N7002 GND A 12 D1D P0 D2D 32CD3 I2 D4D 02D5D5 D2 D6D6 2 D7D7 D2 D8D8 P2 D9D9 I2 D1010 12D111 I0D12D12 LED LED LED LED LED LED
in „Was denkt ihr, ist das noch routbar? (Angefangene Platine)“ · Platinen ·