Min. Sound Output at 10cm dB 85 Rated Voltage V 6 Operating Voltage V 3~8 Resonant Frequency Hz 2.400 Max. Current Consumption mA 40 Coil Resistance 455 Coil Impedance 80 Operating Temperature °C -25~+70 Storage Temperature °C -30~+80 Weight g 2 Value applying at (rated voltage, 2.400Hz, ½ duty square wave) Value applying at (2.400Hz, sine wave, measuring current 60 A) DIMENSIONS : (Unit: mm) Frequency response: Adresse: Felix-Wankel-Str. 35 73760 Ostfildern/Nellingen Tel: +49-711/3414023 Fax: +49-711/3414024 E-mail: info@ekulit.de
output capacitance (SDA) - - 10 pF Cin Input capacitance (SCL) - - 4 pF C L Load capacitance - 125 400 pF 1. The maximum bus s2eed is also limited by the combination of 400pF load capacitance and pull-up resistor. Please refer to the I C specification for further information. 20/40 DocID029104 Rev 3
RGPR30BM40 400V 30A Ignition IGBT Datasheet lOutline BV 40030V TO-252 CES I 30A (2) C V 1.6V (1) CE(sat) (Typ.) (3) E 300mJ AS lFeatures lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) High Self-Clamped
TEST CONDITIONS VCC UNIT MIN TYP MAX MIN MAX MIN MAX 2 V 1.9 1.998 1.9 1.9 OH = –20 A 4.5 V 4.4 4.499 4.4 4.4 V V = V or V V OH I IH IL 6 V 5.9 5.999 5.9 5.9 OH = –6 mA 4.5 V 3.98 4.3 3.7 3.84 OH = –7.8 mA 6 V 5.48 5.8 5.2 5.34 2 V 0.002
(F = 20 mA, t p 20 ms) Centroid Wavelength (typ. 940 (±10) nm centroid (F = 20 mA, t p 20 ms) (max.)) Spectral bandwidth at 50% of I max (typ.) 42 nm (F = 20 mA, t p 20 ms) Half angle (typ.) ± 60 ° Rise and fall time of e (typ.) tr f 16 ns (10% and 90% of I ) e max (F = 100 mA, t p 16 µs,
(F = 20 mA, t p 20 ms) Centroid Wavelength (typ. 940 (±10) nm centroid (F = 20 mA, t p 20 ms) (max.)) Spectral bandwidth at 50% of I max (typ.) 42 nm (F = 20 mA, t p 20 ms) Half angle (typ.) ± 60 ° Rise and fall time of e (typ.) tr f 16 ns (10% and 90% of I ) e max (F = 100 mA, t p 16 µs,
Parameter Value Remark
Active pixels 400 (H) x 400 (V)
Pixel 2.79 µm x 2.79 µm BSI stacked technology with high NIR sensitivity and QE coupled with low noise and low cross talk
Optical format 1/11.6"
Package size (CSP) 1.79mm x 1.79mm Active
0 V; T = −40 to +85 °C; unless otherwise specified. DD SS amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies V supply voltage 2.5 − 5.5 V DD DD supply current operating mode; no load;− 100 200 A V = V or V ; I DD SS fSCL= 400 kHz DD(stb) standby current standby mode; no load; − 2.5 10 A V I
0 V; T = −40 to +85 °C; unless otherwise specified. DD SS amb SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies V supply voltage 2.5 − 5.5 V DD DD supply current operating mode; no load;− 100 200 A V = V or V ; I DD SS fSCL= 400 kHz DD(stb) standby current standby mode; no load; − 2.5 10 A V I
Variables The next parameter which must be calculated is the maximum allowable temperature rise, T R(max) RθJC RθJA (COMPONENT VARIABLES) (APPLICATION VARIABLES) T R(max) T J(max) TA(max) (3) Leadframe Size and Material Mounting Pad Size, Material, and Location where No. of Conduction Pins Placement of
V Number of 150- Loads Figure 33. Figure 34. DIFFERENTIAL GAIN AND PHASE vs NUMBER OF 150-Ω LOADS 400-mV STEP RESPONSE 0.15 0.25 400 VCC = ±5 V RF= 1 k Gain = 2 300 0.12 f = 3.58 MHz 0.20 40 IRE Modulation ° V 200 100 IRE Ramp − m % s − − 0.09 0.15 a g 100 a P t G a o a n t 0 n r u r 0.06 0.10 e t e
3.6±0.2 325 2.8±0.2 3.6±0.2 432 3.7±0.2 4.9±0.2 [Unit: mm] Dimensions Type C D E F G H J K t - 1.1max 107～ 8.0±0.3 3.5±0.05 4.0±0.1 Paper Paper 325 1.75±0.1 2.0±0.05 4.0±0.1 φ1.5 tape) tape) ＋0.1/－0 3.4max 0.6max 432 12.0±0.3 5.5±0.05 8.0±0.1 4.0max 0.6max [Unit: mm] E C B R D t A W Dimensions of Reel
Current IEBO VEB =5V, C =0 <10 µA DC Current Gain hFE C =500mA,V CEV >40 I =100mA,V =1V C CE 100-600 100-400 100-600 Group-10 63-160 63-160 Group-16 100-250 100-250 Group-25 160-400 160-400 Group-40 250-600 250-600 Collector Emitter Saturation Voltage VCEsat)* IC=500mA,I B50mA <0.70 V Base Emitter On Voltage
diodth(c)x R STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit R * Reverse leakage current T j 25°C V R V RRM 100 µA Tj= 125°C 80 800 VF** Forward voltage drop Tj= 25°C IF= 100A 1.05 V IF= 200A 1.20 Tj= 150°C IF= 100A 0.75 0.85 IF= 200A 1.05 Pulse test: *
± 15 V (unless otherwise noted) CC ± TL061M TL064M PARAMETER TEST CONDITIONS † TL062M UNIT MIN TYP MAX MIN TYP MAX V = 0, TA= 25°C 3 6 3 9 VIO Input offset voltage O mV R S 50 Ω TA= –55°C to 125°C 9 15 Temperature coefficientV = 0, R = 50 Ω, α VIO O= S 10 10 µV/°C of input offset voltageTA –55°C to 125
Collector- emitter Voltage Current 2 000 16 V =2V F =1mA Ta=25˚C 1 800 CE 0.9mA Ta=25˚C 14 ) 1 600 PC(MAX.) ( ) 12 0.8mA R 1 400 A C ( o 1 200 t 10 0.7mA a e 0.6mA r 1 000 r 8 s c a 800 t 0.5mA t e 6 e 600 o 0.4mA r C 4 C 400 0.3mA 2 200 0.1mA 0.2mA 0 0 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 Forward current
Current DCTest Current VCat 200A tance f = RMS DC (2ms) 8 x 20µs Current (8/20µs) 1MHz V V W I Min V Max V C M(AC) M(DC) TM TM N(DC) C (V) (V) (J) (A) (V) (V) (V) (V) (pF) BA Series V131BA60 130 175 450 50000 184.5 205 225.5 340 20000 V151BA60 150 200 530 50000 216 240 264 400 16000 V251BA60 250 330 880
and PFC (power factor correction) applications Industry-benchmark switching losses improve V CE(on) max. = 2.70V efficiency of all power supply topologies G 50% reduction of Eoff parameter E @V GE = 15V, C = 12A Low IGBT conduction losses Latest-generation IGBT design and construction offers n-channel
Connector…………………………… Pin 2.MECHANICALDATA ITEM WIDTH HEIGHT THICKNESS UNIT Module size 144 104.0 14.0(MAX) mm Viewing area 114 61.0 - mm Size 0.4 0.4 - mm Dot Pitch 0.44 0.44 - mm Diameter of mounting hole 3.0 mm Weight About 50 g 122243211 2 3.ABSOLUTEMAXIMUMRATINGS Parameter Applicable Condition Rate
to +70°C Dice* kits are available: Order the MAX712EVKIT-DIP for quick MAX712EPE -40°C to +85°C 16 Plastic DIP evaluation of the linear charger, and the MAX713EVKIT- SO to evaluate the switch-mode charger. MAX712ESE -40°C to +85°C 16 Narrow SO MAX712MJE
to +70°C Dice* kits are available: Order the MAX712EVKIT-DIP for quick MAX712EPE -40°C to +85°C 16 Plastic DIP evaluation of the linear charger, and the MAX713EVKIT- SO to evaluate the switch-mode charger. MAX712ESE -40°C to +85°C 16 Narrow SO MAX712MJE
40 % to 60 % C-MOS load: 1/2V DD TTL level 45 % to 55 % e — TTL load: 1.4 V (IOH) VDD -0.4 V Min.-400 µA 2.4 V Min. V DD--4 mA Min. Output voltage VOL 0.4 V Max.e (IOL) 16 mA 8hmA 4 mA condition(fanout) C-TTL CNL 10 TTL Max. 5 TTL Max. 50 pF—Max. CL_ 15 pF Outputenable/disableinputvoltage VIH 2.0 V Min. S 3.5V Min. 2.0V Min. II=1 µA Max.(OE=V DD) V IL 0.8 V Max. 1.5 V Max. 0.8V Max. II=-100µAMin.(OE=GNDI=-500µAMin.(OE=GND)PTJ Output disable curC-MOS level IOE 12 mA Max. a 28 mA—Max. 20 mA Max. C-MOS load: 20ND%→ 80 % VDD Output rise
Prüfspannung Steueranschlüsse/Kontakt 4000V 4000V 4000V
Nennschaltleistung 16A/250V AC 10A/250V AC 10A/400V AC 6A/400V AC 25A/250V AC 16A/400V AC
230V-LED-Lampen bis zu 200W bis zu 200W bis zu 200W
Glühlampen- und Halogenlast 230V 2300W 2300W 2300W
Leuchtstofflampen mit KVG in DUO-Schaltung 2300 VA 230 VA
R. F. doubletriode ECC99 Base: NOVAL LimitingValues: U = 6,3/12,6 V U a = 400 V I = 800/400 mA I k = 60 mA U k/ = 200 V Typical Characteristics: W a = 3,5 W U = 150 V U g = -4 V I = 18 mA S = 9,5 mA/V R = 2,3 kΩ µ = 22 max 22,0 Capacitances: system I. system II . cg/ = 5,8 5,8
Profile Feature Lead-Based Solder Lead-Free Solder Average Ramp-Up Rate (Ts maxto Tp) 3 °C/second max. 3 °C/second max. Preheat: Temperature Min (Tsmin 100 °C 150 °C Preheat: Temperature Max (Ts ) 150 °C 200 °C max Preheat: Time (tsmino tmax) 60-120 seconds 60-180 seconds Time Maintained Above: Temperature
Circuit of Peak Input Voltage Vin and Collector Cutoff Collector Cutoff Current IEX CurrentCEX , ②＋,④－ MAX 0.1 MAX 0.1 mA Q1 DC Current Gain hFE V CE= 5V,CI = 1.5A, ②＋,④－,⑤I B 13～26 8～16 Collector to Emitter Saturation Voltage V (sat) IC=1.5A,BI =0.3A, ②＋,④－,⑤I B MAX 1.0 MAX 1.0 V Thermal Resistance θjc Junction to Case MAX 2.5 MAX 2.5 ℃/W D1 Reverse Current I V R800V,①+,②- MAX 10 MAX 10 μA Forward Voltage V F IF=0.6A,①-,②+ MAX 1.7 MAX 1.7 V MIN 1.7 MIN 1.7 Driving Saturation Voltage V Dsat) IC=1.5A,BI =0.3A, ⑤ +,④ - MAX
VIN -0.3 to +33 V Operating Temperature Range, Ta -40 to +85 oC o Maximum Junction Temperature, T J(MAX) +150 C Storage Temperature Range -65 to +165 oC TO-92 200 °C/W Junction-to-Ambient Thermal Resistance, JA SOT89-3 200 °C/W 8SOP-EP 125 °C/W TO-92 0.50 W Power Dissipation, D(MAX) SOT89-3 0.50 W 8SOP-EP
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