-
PDF
IRLIZ44N_IR.pdf
Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLIZ44NPbF 35 R D V DS 30 VGS D.U.T. ) R G ( 25 +V n - DD e u 20 5.0V C i Pulse Width
in „Toggle Schaltung mit NE555 schaltet ein, aber nicht aus“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irl630.pdf
On-Resistance GS D ––– ––– 0.50 V GS= 4.0V, D = 4.5A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS ,DI = 250µA gfs Forward Transconductance 4.8 ––– ––– S V DS= 50V, D = 5.4A DSS Drain-to-Source Leakage Current ––– ––– 25 µA V DS= 200V, VGS = 0V ––– ––– 250 V DS= 160V, VGS = 0V, J = 125°C GSS
in „Kontrolle der Kühlkörperberechnung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LM13700.pdf
DS007981-52 DS007981-50 DS007981-51 Unity Gain Follower DS007981-5 Leakage Current Test Circuit Differential Input Current Test Circuit DS007981-6 DS007981-7 Circuit Description The differential transistor
in „Logarithmisches Stero-Poti für Kopfhörerverstärker - optionen?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
FDN335N.pdf
MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced • 1.7 A, 20 V. DS(ON)0.07 @ V GS = 4.5 V usingFairchildSemiconductor'sadvancedPowerTrench R = 0.100 @ V = 2.5 V. processthathasbeenespeciallytailoredtominimize the DS(ON) GS on-state resistance and yet maintain low gate
in „FDN335N Hilfe mit dem Datenblatt“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FDN335N.pdf
MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced • 1.7 A, 20 V. DS(ON)0.07 @ V GS = 4.5 V usingFairchildSemiconductor'sadvancedPowerTrench R = 0.100 @ V = 2.5 V. processthathasbeenespeciallytailoredtominimize the DS(ON) GS on-state resistance and yet maintain low gate
in „Batt. Ladung per MOSFET Ein/Aus schalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irf7389.pdf
V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irf7389.pdf
V DS= 15V, D = 5.8A gfs ForwardTransconductance P-Ch — 7.7 — S V = -15V, I = -4.9A DS D N-Ch — — 1.0 V DS= 24V, VGS = 0V I Drain-to-Source Leakage Current P-Ch — — -1.0 V DS= -24V, GS = 0V DSS N-Ch — — 25
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
FDC6327C.pdf
are • N-Channel 2.7A, 20V. R = 0.08Ω @ V = 4.5V produced using Fairchild Semiconductor's advanced DS(on) GS PowerTrench process that has been especially tailored RDS(on)= 0.12Ω @ V GS = 2.5V to minimize on-state resistance and yet maintain low gat• P-Channel -1.6A, -20V.DS(on) 0.17Ω @ V GS = -4.5V charge
in „Port-Stromverstärkung,Push-Pull-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
mc14553b-d-1192980.pdf
10 LE Q3 5 Parameter Symbol Value Unit O.F. 14 DC Supply Voltage Range V DD −0.5 to +18.0 V 11 DIS DS1 2 Input or Output Voltage Range Vin −0.5 to DD V DS2 1 (DC or Transient) V out + 0.5 13 MR DS3 15 Input Current (DC or Transient) per Pin Iin ±10 mA V DD= PIN 16 Output Current (DC or Transient) per
in „MC14553BCP - Alternative“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
VNS1NV04DTR.pdf
DRAIN 2 INPUT 2 CURRENT AND VOLTAGE CONVENTIONS IN1 RIN1 D1 INPUT 1 DRAIN 1 V IIN2 RIN2 ID2 V IN1 DS1 INPUT 2 DRAIN 2 V IN2 SOURCE 1 V SOURCE 2 DS1 2/14 1 VNS1NV04D THERMAL DATA Symbol Parameter Value Unit R Thermal Resistance Junction-lead (per channel) MAX 30 °C/W thj-lead R thj-amb Thermal Resistance
in „[V] Highside-Schalter“ · Markt ·
-
PDF
22103a.pdf
CURVE FOR THE INTERNAL PULL-UP RESISTORS GPIO Pin Internal Pull-up Current vs V DD 400 350 T = -40°C 300 T = +25°C ) 250 µ ( 200 P I 150 100 T = +125°C T = +85°C 50 0 1.5 2 2.5 3 3.5 4 4.5 5 5.5 V DD (V) © 2008 Microchip Technology Inc. DS22103A-page 25 MCP23018/MCP23S18 1.6.8 INTERRUPT FLAG REGISTER The
in „MCP23S18 I/O Expander“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
PT4115E.pdf
15 20 25 30 Supply Voltage Vin(V) LED Current vs Vdim 800 700 R=0.13ohm ) 600 m t 500 e u 400 c E 300 L 200 R=0.33ohm 100 0 0 1 2 3 4 5 Dim Pin Voltage (V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 7 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High Brightness LED Driver with
in „LED 20-50mA mit verlustarmer und winziger Lösung an 24V DC/= betreiben“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
PT4115E-datasheet.pdf
15 20 25 30 Supply Voltage Vin(V) LED Current vs Vdim 800 700 R=0.13ohm ) 600 m t 500 e u 400 c E 300 L 200 R=0.33ohm 100 0 0 1 2 3 4 5 Dim Pin Voltage (V) China Resources Powtech (Shanghai) Limited WWW.CRPOWTECH.COM Page 7 PT4115_DS Rev EN_2.9 PT4115 30V, 1.2A Step-down High Brightness LED Driver with
in „Problem bei LEDKSQ“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS1775R.pdf
Piece Tape-and-Reel DS1775R2+U 010 7752 (See note) DS1775R2 in Lead-Free 5-Pin SOT-23 DS1775R2/T&R 010 7752 DS1775R2 in 5-Pin SOT-23, 3000 Piece Tape-and-Reel DS1775R2-U 010 7752 DS1775R2 in Lead-Free 5-Pin SOT-23 DS1775R3
in „AkkuPack mit 12 Volt 2100mAh wie laden ?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
ISL6545-Renesas.pdf
- Uses Lower MOSFET’s r DS(ON) product and 9V/µs slew rate which enables high converter • Small Converter Size in 8 Ld SOIC or 10 Ld DFN bandwidth for fast transient performance. The resulting - 300kHz or 600kHz Fixed Frequency
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
24fc256.pdf
Microchip Technology Drawing C04-2111-MS Rev D 1998-2022MicrochipTechnologyInc.anditssubsidiaries DS20001203Y-page 25 24AA256/24LC256/24FC256 8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP] Note: For the most current package drawings, please see the Microchip Packaging Specification located at
in „Wodtke HP-S5 HP Er3 EEPROM Schreib-/Lesefehler“ · Haus & Smart Home ·
-
PDF
SFS0405T4.pdf
MOSFET GENERAL DESCRIPTION The SFS0405T4 uses advanced trench technology and design to provide excellentDS(ON)ith low gate charge. It can be used in a wide variety of applications. FEATURES ◆ N-CHANNEL V DS0V,I D7A R DS(ON)2mΩ(TYP@V =10GS R DS(ON)8mΩ(TYP@V =4.GS) ◆ P-CHANNEL V DS40V,I D-5.5A R DS(ON)5mΩ(TYP
in „Bezugsquelle oder Alternative gesucht.“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
1331276981-613264.pdf
Maximum and Minimum On-Time MOSFET source and GND.or connected between the by the LEB time (typical 300ns). The IC limits the on-time to a maximum time of approximately 50us. Current Sensing ©On-Bright Electronics Confidential Preliminary Datasheet - 7 - OB_DOC_DS_333000 OB3330 High Performance LED Lighting
in „LED Netzteil identifizierung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irf7389.pdf
5.8A gfs ForwardTransconductance P-Ch 7.7 S V = -15V, I = -4.9A DS D N-Ch 1.0 VDS = 24V, GS = 0V I Drain-to-Source Leakage Current P-Ch -1.0 VDS = -24V, GS= 0V DSS N-Ch 25V µA DS = 24V, GS = 0V, J = 55°C P-Ch -25V = -24V, V = 0V, T = 55°C DS GS J IGSS Gate-to-SourceForwardLeakage
in „Treiber für Push-Pull 12V?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irf7389.pdf
5.8A gfs ForwardTransconductance P-Ch 7.7 S V = -15V, I = -4.9A DS D N-Ch 1.0 VDS = 24V, GS = 0V I Drain-to-Source Leakage Current P-Ch -1.0 VDS = -24V, GS= 0V DSS N-Ch 25V µA DS = 24V, GS = 0V, J = 55°C P-Ch -25V = -24V, V = 0V, T = 55°C DS GS J IGSS Gate-to-SourceForwardLeakage
in „Brushless DC Motorsteureung Dysfunktion AVR444“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
_FET-N__JCET_AO3400.pdf
Plastic-Encapsulate MOSFETS AO3400 N-Ch ann el Enhanceme tnMode Field Ef fect ransistor V (BR)SS R DS(on)AX D SOT-23 35m Ω@10V 30 V 40mΩ @ 4.5V 5.8A 1. GAT 52m Ω @ 2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z High dense cell design for extremely low DS(ON) z Load/Power Switching z Exceptional on-resistance
-
PDF
NDM3000.pdf
DrainCurrent VDS ±20 V, V =GS V All ±1 µA T J55 C ±25 µA IGSS Gate-BodyLeakage,Forward VGS ±20 V, V DS0 V All ±100 nA ON CHARACTERISTICS (Note3) V GateThresholdVoltage V = V , I = -250 µA Q1, Q3, Q5 -1 -1.6 -3 V GS(th) DS GS D T =125 C -0.7 -1.25 -2.2 J V = V , I = 250 µA Q2, Q4, Q6 1 1.7 3 DS GS D T
in „L298 Nachfolger???“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Datenblatt.pdf
the next line, thus limiting the number of available characters for customer-specific information. DS21483D-page 18 © 2007 Microchip Technology Inc. TC9400/9401/9402 14-Lead Ceramic Dual In-Line (JD) – .300" Body [CERDIP] Note: For the most current package drawings, please see the Microchip Packaging
in „Frequenz-Spannungswandler OP-Verstärkung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FB180SA10.pdf
oss - , t C G 5000 , 5 C rss S V FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 50 100 150 200 250 300 350 400 Q , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION
in „Strom bis 200A schalten mit Power MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irfh5300pbf.pdf
IRFH5300PbF ® HEXFET Power MOSFET V 30 V DS R DS(on) max 1.4 m: (@V GS= 10V) Q g (typical) 50 nC R G (typical) 1.3 : ID (@T = 25°C) 100 h A PQFN 5X6 mm c(Bottom) Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS2482-800DS18B20PAR_300.pdf
DS2482-800DS18B20PAR_300.pdf
in „Messung mit DS18B20PAR an DS2482-800 setzt bei niedriger Temperatur aus“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Tiny15L.pdf
-1SI 8S2 (-40°C to 85°C) Package Type 8P3 8-lead, 0.300" Wide, Plastic Dual Inline Package (PDIP) 8S2 8-lead, 0.200" Wide, Plastic Gull Wing Small Outline (EIAJ SOIC) 8 ATtiny15L 1187DS–12/01 ATtiny15L Packaging Information 8P3 8P3, 8-lead, Plastic Dual
in „Frequenzschalter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
0900766b81524b17.pdf
forward voltage VF — 1.7 2.2 V IF= 15 A FRD reverse recovery time trr — 100 — ns IF= 15 A, dF /dt = 300 A/s Notes: 3. Pulse test 4. Switching time test circuit and waveform are shown below. R07DS1291EJ0101 Rev.1.01 Page 2 of 9 Oct 22, 2015 RJH65T47DPQ-A0 Preliminary Main Characteristics Collector Dissipation
in „Vergleichstyp IGBT IXGQ90N27PB“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
RT8477A.pdf
Input Voltage (V) CC LED Current vs. V ISP - ISN Threshold vs. Temperature CTL 120 450 LED Current = 300mA, LED = 6pcs 400 ) V 110 ) 350 ( A l ( 300 o 100 n s e 250 r u 200 T C 90 D 150 S E - L 100 P I 80 50 VCC = 24V 0 70 -40 -10 20 50 80 110 140 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 V CTL (V) Temperature
in „Frage zum LED-Treiber RT8477A“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
488161_1_.pdf
4000 150 350 / 10,0 Ducellier 4931A „ID“ bis 02/1964 3 800 23,0 / 4400 150 350 / 10,0 Ducellier 3941B DS 07/1959-09/1965, ID 02/1964-09/1964 4 1000 31,0 / 4500 100 300 / 10,0 Ducellier 4141A ID 09/1964-09/1965 5 800 23,0 / 4400 100 300 / 10,0 Ducellier 3944A DE 09/1965-09/1969 6 2000 19,0 / 5000 100 300
in „Funktionsweise von analogen elektronischen Drehzahlmessern?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
CET_CEU3252.PDF
CED3252/CEU3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 25A, R = 28mW @V = 10V. DS(ON) GS R = 39mW @V = 4.5V. DS(ON) GS Super high dense cell design for extremely low R. DS(ON) High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G
in „Was ist das für ein Bauteil "3252 914AG" ?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Infineon-IPA50R190CE-DS-v02_04-EN.pdf
Coss stored energy 104 7 6 Ciss 3 10 5 4 ] J p 2 [ 10 Coss s C o E 3 2 101 Crss 1 100 0 0 100 200 300 400 500 0 100 200 300 400 500 V [V] V [V] DS DS C=f(VDS; V GS V; f=1 MHz E ossV )DS Forward characteristics of reverse diode 102 1 10 125 °C 25 °C ] A F I 0 10 10-1 0.4 0.6 0.8 1.0 1.2 1.4 V SDV] IF
in „Mosfet 5R190CE“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
a switched application is the sum of the on loss, I 2× R ,and the dynamic switching losses which D DS(on) occur while making the transition between the two operating points. The characteristics which concern a switchmode designer are the R DS(on)characteristic and the parameters which determine the dynamic
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
a switched application is the sum of the on loss, I 2× R ,and the dynamic switching losses which D DS(on) occur while making the transition between the two operating points. The characteristics which concern a switchmode designer are the R DS(on)characteristic and the parameters which determine the dynamic
in „Kühlkörper bei etwa 200 Watt max Verlustleistung?“ · Mechanik, Gehäuse, Werkzeug ·
-
PDF
New_500V_Linear_MOSFET_for_a_120kw_active_Load.pdf
a switched application is the sum of the on loss, I 2× R ,and the dynamic switching losses which D DS(on) occur while making the transition between the two operating points. The characteristics which concern a switchmode designer are the R DS(on)characteristic and the parameters which determine the dynamic
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
FQPF6N90C.pdf
Gate Charge Test Circuit & Waveform 6 N 9 0 C / F V GS Q Same Type P 50KΩ as DUT F 12V 200nF Q g 6 300nF 10V N V DS 9 VGS Q gs Qgd C DUT 3mA Charge Resistive Switching Test Circuit & Waveforms R V L V DS 90% DS V V GS DD R G 10% V GS 10V DUT t t t d(on) r d(offf ton toff Unclamped Inductive Switching Test Circuit & Waveforms L BV DSS EAS = ---LI AS -------------------- V DS 2 BV DSS - DD BV DSS ID AS R G V DD ID(t) 10V DUT VDD V DS(t) t p tp Time ©2003 Fairchild Semiconductor Corporation Rev. A, April 2003 F Q P 6 Peak Diode Recovery dv/dt Test Circuit & Waveforms N 9 C
in „Suche MOSFET und passenden Treiber mit galvanischer Trennung für Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1267.pdf
Resistive elements are temperature GND 8 9 DQ compensated to ±0.3 LSB relative linearity 16-Pin SOIC (300-mil) § Standard resistance values: See Mech. Drawings Section – DS1267-10 ~ 10 kΩ – DS1267-50 ~ 50 kΩ VB 1 14 VCC – DS1267-100 ~ 100 kΩ H1 2 13 SOUT § Operating Temperature Range: – Industrial: -40°
in „Poti mit Atmega8 ersetzen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FQB34P10.pdf
150°C -- -- -10 µA T I Gate-Body Leakage Current, Forward V = -25 V, V = 0 V -- -- -100 nA ® GSSF GS DS M IGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, DS = 0 V -- -- 100 nA O S On Characteristics E V V = V , I = -250 µA T GS(th) Gate Threshold Voltage DS GS D -2.0 -- -4.0 V R DS(on) Static Drain-Source
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Linear_Power_MOSFETS_Basic_and_Applications.pdf
or off. In the Ohmic region, the device acts as a resistor with almost a constant on- resistance R DS (on)nd is equal to V ds Ids.he linear-mode of operation, the device operates in the ‘Current-Saturated’ region where the drain current (I ) ds a function of the gate-source voltage (V )gsnd defined by
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irlr2905_1_.pdf
Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS = 0V, f = 1MHz ID = 25A Ciss = Cgs + Cgd , C ds SHORTED V = 44V 2400 C = C V DS rss gd ( VDS = 28V Ciss Coss = Cds + Cgd e12 ) a F 2000 o ( V e e n 1600 r 9 t u c S a Coss o a 1200 - 6 C t , a C 800 , S Crss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13
in „Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRLU2905.pdf
Vs. Temperature www.irf.com 3 IRLR/U2905 2800 15 VGS = 0V, f = 1MHz ID = 25A Ciss = Cgs + Cgd , C ds SHORTED V = 44V 2400 C = C V DS rss gd ( VDS = 28V Ciss Coss = Cds + Cgd e12 ) a F 2000 o ( V e e n 1600 r 9 t u c S a Coss o a 1200 - 6 C t , a C 800 , S Crss G3 400 V FOR TEST CIRCUIT SEE FIGURE 13
in „High Power LED Driver“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MTE011N10RFP-CystechElectonics.pdf
- - V V GSV, I =D50μA ∆BV DSS/∆Tj - 74 - mV/C Reference to 25C, ID=250μA V GS(th) 2.0 - 4.0 V V DS = V GSI D250μA *G FS - 14.5 - S V DS =10V, ID=10A IGSS - - ±100 nA V GS20V IDSS - - 1 μA V DS =80V, V GS =0V - - 5 V DS =80V, V GS =0V, Tj=55C *R DS(ON) - 11 13.8 m Ω V GS =10V, ID=11A Dynamic *Qg -
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
93C86.pdf
number of available characters for customer-specific information. 1996-2012 Microchip Technology Inc. DS21132F-page 11 93C76/86 8-Lead Plastic Dual In-line (P) – 300 mil Body (PDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com
in „asm Code für EEPROM 93C86“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IPB180P04P4.pdf
-6 10-5 10-4 10-3 10-2 10-1 100 -V DS[V] tp[s] Rev. 1.3 page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25°C R = f(I ); T = 25°C D DS j DS(on) D j parameter
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
STB10NK60Z.pdf
= 0) VDS = Max Rating, µA GS 50 I Gate Body Leakage Current V = ±15V, V = 0 ±10 µA GSS (VDS= 0) GS DS V Gate Threshold Voltage V = V , I = 250 µA 3 3.75 4.5 V GS(th) DS GS D Static Drain-Source On RDS(on) VGS = 10 V,DI = 20 A 0.65 0.75 Ω Resistance Table 6. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfsNote 4 Forward Transconductance V DS=15V, D = 4.5A 7.8 S Ciss Input Capacitance 1370 pF C oss Output Capacitance V DS=25V, f=1 MHz, GS =0 156 pF Reverse Transfer Capacitance 37 pF C rss Coss eq. Note 5 Equivalent Ouput Capacitance GS=0,
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS_SJDP120R085_rev1.3.pdf
Parameter Symbol Conditions Unit Min Typ Max Off Characteristics Drain-Source Blocking Voltage BV DS VGS = -15 V, D = 600 µA 1200 - - V V DS= 1200 V, V GS < -15 V, - 10 - Tj = 25 C Total Drain Leakage Current DSS µA V DS= 1200 V, V GS < -15 V, Tj= 150 C - 100 - VGS = -15 V, VDS = 0V - -0.1 -0.3 Total
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and
in „PIN Dioden Geiger“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LMC7111BIM5X.pdf
3V L DS012352-25 DS012352-26 DS012352-27 Sourcing Output vs Sinking Output vs Gain and Phase vs Output Voltage Output Voltage Capacitive Load @ 3V DS012352-28 DS012352-29 DS012352-30 Gain and Phase vs Gain and
in „Einbau-Vorverstärker für E-Gitarre, Ub = 3V“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP2551.pdf
voltage 0V Receive data output voltage 0.3 VDD 11 VRS = 4V; TXD = 2V © 2007 Microchip Technology Inc. DS21667E-page 13 MCP2551 NOTES: DS21667E-page 14 © 2007 Microchip Technology Inc. MCP2551 3.0 PACKAGING INFORMATION 3.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX MCP2551 XXXXXNNN
in „CAN-BUS - Nur empfangen - Was mache ich mit dem TXD Pin am Tranceiver??“ · Mikrocontroller und Digitale Elektronik ·