Mechanik-Zeichnungen wurden mit Eagle 4.15 erstellt (www.cadsoft.de) Datenblätter zu SA602, TS912, 74HC93 usw. z.B. auf www.alldatasheets.com Datenblatt zu ATMega168 (knapp 400 Seiten): www.atmel.com -> suchen nach ‚ATMega168‘ Nick Roethe, DF1FO: 80m-SMD-Peilempfänger Version 5 Dokumentenname fjrx85.
A S A A C P D U S S T X X V C G V C 1 2 3 4 5 6 7 8 9 0 1 1 1 1 1 1 1 1 1 2 TR2 430 5% 0.1uf AGND TC16 TC17 0.22uF TC12 TC13 6.8nF 2.7nF 50V ?0% TC15 18pF 18pF U TY1 _ 3 3.3V_TU 3 16MHZ 10PF + 10PPM R803 R804 4.7K 4.7K RT4 33R TUNER_SDA RT5 33R TUNER_SCL 1 CT3 CT2 1 TS1 39P 39P AGND market point B B
NSPG320BS (G-ST) 2 2 2 BI B 35012765 Connecto r S12B-ZR 1 1 1 AF X 10204339 Connector IMSA-9610S-20B-TC 1 1 1 AE X 10223031 IC LM2611BMF NOPB 1 1 1 AY B 10005659 CMOS IC SN74LV08APW R 1 1 1 AB B 21120823 Monolithic IC BA12003BF-E2 2 2 2 AF B — 86 — Downloaded from www.Manualslib.com manuals search engine
SINAD THD, 2nd and 3rd vs Input Sinewave Frequency vs Input Frequency SFDR vs Input Frequency 12.0 74 –44 104 11.5 71 –50 98 –56 THD 92 11.0 68 2nd ) –62 86 ) S d I10.5 65 N d –68 B 80 ( D 3 3rd ( B10.0 62 d n –74 R 74 O ) , F E 9.5 59 D –80 S 68 T –86 62 9.0 56 –92 56 8.5 53 –98 50 8.0 50 –104 44 0.1
N + 3 t H N + 1 tL – ENC ENC + tD N – 5 N – 3 N – 1 DA0-DA9, OFA tD DB0-DB9, OFB N – 6 N – 4 N – 2 tC tC CLKOUTB CLKOUTA 224210 TD03 Demultiplexed CMOS Outputs with Simultaneous Update All Outputs Are Single-Ended and Have CMOS Levels tAP ANALOG N N + 2 N + 4 INPUT N + 3 tH N + 1 tL ENC – ENC + tD DA0
Lead-Free G D TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units D @ TC= 25°C Continuous Drain CurrenGS@ 10V 130 D@ T C 100°C Continuous Drain CurrenGS@ 10V 92 A DM Pulsed Drain Current 520 PD@T C 25°C Maximum Power Dissipation 520 W 3.5 Linear Derating Factor W/°C VGS Gate-to-Source
1.1 W DPAK IPAK RqJA(Note 2) (Bent Lead) (Straight Lead(Straight Lead STYLE 2 DPAK) Continuous Drain TC= 25°C ID 44 A Current qJC (Note 1) TC= 85°C 32 MARKING DIAGRAMS & PIN ASSIGNMENTS Power Dissipation TC= 25°C PD 35.7 W 4 RqJC(Note 1) Drain Pulsed Drain t =10ms T = 25°C I 132 A 4 4 Current p A DM Drain
SR-332 (Bellcore) ; 69.81K hrs MIL-HDBK-217F (25℃) OTHERS DIMENSION 240*115*41mm (L*W*H) PACKING 1.74kg ; 8pcs/14.9kg/0.74CUFT 1. All parameters NOT specially mentioned are measured at 230VAC input, rated load and 25℃ of ambient temperature. NOTE 2. Ripple & noise are measured at 20MHz of bandwidth by
x 60.0(H) x 12.0 MAX.(D) mm Effective viewing area 76.0(W) x 25.2(H) mm Active area 70.35(W) x 20.74(H) mm Display format 20 characters x 4 lines - Character size 2.90(W) x 4.697(H) (5 x 8 dots) mm Character spacing 0.65(W) x 0.65(H) mm Character pitch 3.55(W) x 5.347(H) mm Dot size 0.568(W) x 0.574
traces is given by the following grammar: Figure 10: Typing of stable expressions. Usbdf T ::= Tsj Tc Tubcmf Ts ::= † j hcx:e¿j Ts; Ts Dibohfbcmf Tc ::= W¿j R l (Tc) j s ; Tc tinues evaluation of e c A read is considered changeable because the contents of the modifiable on which it depends When writing
low-power Schottky advanced r m 5 TTL Schottky TTL Schottky G c TTL TTL u n parameters d u family 74HC 4000 74 74LS 74S 74ALS 74AS 74F e t r CD HE s Power dissipation, typ. (mW) Gate static 0.0000025 0.001 10 2 19 1.2 8.5 5.5 dynamic @100 kHz 0.075 0.1 10 2 19 1.2 8.5 5.5 static 0.000005 0.001 300 100
low-power Schottky advanced r m 5 TTL Schottky TTL Schottky G c TTL TTL u n parameters d u family 74HC 4000 74 74LS 74S 74ALS 74AS 74F e t r CD HE s Power dissipation, typ. (mW) Gate static 0.0000025 0.001 10 2 19 1.2 8.5 5.5 dynamic @100 kHz 0.075 0.1 10 2 19 1.2 8.5 5.5 static 0.000005 0.001 300 100
11 N 3: TC 37: OVF Y 38-39: MC0-1 TC4 0x42003000 17 12 N 21 12 N 4: TC 40: OVF Y 41-42: MC0-1 TC5 0x42003400 18 13 N 21 13 N 5: TC 43: OVF Y 44-45: MC0-1 TC6 0x42003800 19 14 N 22 14 N 6: TC 46: OVF Y 47-48: MC0
Factor ≤ 0.1 % i r D , Fig 10a. Switching Time Test Circuit ID 5 VDS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS Fig 9. Maximum Drain Current Vs. d(on) r d(off)f Case Temperature Fig 10b. Switching Time Waveforms 10 ) C t D = 0.50 Z ( 1 s 0.20 n p 0.10 s 0.05 e l 0.02 PDM a 0.1
Factor ≤ 0.1 % i r D , Fig 10a. Switching Time Test Circuit ID 5 VDS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% VGS Fig 9. Maximum Drain Current Vs. d(on) r d(off)f Case Temperature Fig 10b. Switching Time Waveforms 10 ) C t D = 0.50 Z ( 1 s 0.20 n p 0.10 s 0.05 e l 0.02 PDM a 0.1
> RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT Vdss Drain to source voltage Vgs=0V 30 V Vgss Gate to source voltage Vds=0V -5 to +10 V Pch Channel dissipation Tc=25°C 48 W Pin
L L L L L ( ( 0 I O tc t t tc tc tc tc tc S I . . . . . . . . = − − + + + + − − s M M M M M M M M a C C C C C C C C t P P P P P P P P P r k c c c c c c c c k c 5 5 5 5 5 5 5 5 l l 0 0 0 0 0 0 0 0 I C P ( ) ) g n N A O ) )
(page 14). 03-2009 SOI/DT-mdm FCPD-dp Quality-fz 5/91 599 70 56-70 2 WM APPLIANCES CONTROL PANELS TC4 TC3 X L O R TC2 C E E TC3 ICON TC2 ICON TN A3 RI AF3- MC A4.2 SA E TG RO C3 AL CF3 STA A C T P I TS RS AU Z3 MA SZ 03-2009 SOI/DT-mdm FCPD-dp Qua6/91-fz 599 70 56-70 Series 6 SPECIAL G E A Series 6
Ferrites and accessories PM 74/59▯ Core and accessories Series/Type: B65686, B65687 Date: March 2016 a~í~=pÜÉÉí ¤▯EPCOS AG 2016. Reproduction, publication and dissemination of this publication, enclosures hereto and the information
(sat) Symbol Test Conditions Maximum Ratings TO-3P V T = 25°C to 150°C 270 V CES J VGEM ±30 V IC25 TC= 25°C, IGBT chip capability 90 A G C E (TAB) ICPEAK TJ≤ 150°C, tp ≤ 1 μs, D ≤ 1% 340 A IC(RMS) Lead current limit 75 A SSOA VGE= 15 V, TVJ 150°C, R =G20 Ω CM = 90 A G = Gate C = Collector E = Emitter TAB = Collector (RBSOA) Clamped inductive load, VCE 270 V P C TC= 25°C 150 W TJ -55 ... +150 °C TJM 150 °C T -55 ... +150 °C Features stg T Maximum lead temperature for soldering 300 °C • International standard package L • Low V 1.6 mm (0.062 in.) from case for 10
Example: ZTB-C-380K000 TEST CIRCUIT VDC VDC IC IC IC IC Rf Rf Rb C L1 CL2 C L1 CL2 IC: CD4069UBEX2 IC: TC74HCU04NX2 CMOS VDC: +5V TTL VDC: +5V Rf: 1 MOhms Rf: 1 MOhms Rb: 2.2 ~ 22 KOhms OUTLINE DRAWING A B Frequency A B C D E Range KHz Width Thickness Height Lead Length Lead Space C 190 ~ 249 13.5 3.8 14.7
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