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PDF
DS1210.pdf
consumption. The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved. 1 of 6 111899 DS1210 OPERATION The DS1210 nonvolatile controller performs five circuit functions
in „Suche Chip aus Mega-Drive-2-Spielplatine“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1210.pdf
consumption. The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation can be achieved. 1 of 6 111899 DS1210 OPERATION The DS1210 nonvolatile controller performs five circuit functions
in „DS1210 als Ersatz für BA6162?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTB16-600C.pdf
1.75 0.0551 0.0689 R 0.40 0.0157 V2 0° 8° 0° 8° 1. Dimensions in inches are given for reference only DS2115 - Rev 12 page 8/16 BTA12, BTB12, T1205, T1210, T1235, T1250 D²PAK package information Figure 14. D²PAK recommended footprint (dimensions are in mm) 16.90 10.30 5.08 1.30 3.70 8.90 DS2115 - Rev 12
in „Leistung für Gatewiderstand Triac“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
rt8279.pdf
TAIYO YUDEN UMK325BJ475MM-T 4.7 1206 C OUT MURATA GRM31CR60J476M 47 1206 C OUT TDK C3225X5R0J476M 47 1210 C OUT MURATA GRM32ER71C226M 22 1210 C TDK C3225X5R1C22M 22 1210 OUT Table 4. Suggested Diode Component Supplier Series VRRM (V) IOUT(A) Package DIODES B550C 50 5 SMC PANJIT SK55 50 5 SMC DS8279-01 December
in „Suche Schaltregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP2021.pdf
XXXXXX 500EMD XXXXXX 1210 256 YYWW NNN PIN 1 PIN 1 8-Lead SOIC (150 mil) (MCP2021A) Example: 2021A50E SN ^^1210 256 NNN 8-Lead PDIP (300 mil) (MCP2021A) Example XXXXXXXX 2021A500 E/P ^^256 XXXXXNNN 1210 YYWW Legend: XX...X Customer-specific
in „MCP2021 -> Welcher ESD Level wird erreicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RT8298E-02.pdf
TAIYO YUDEN TMK316BJ106ML 10 1206 C MURATA GRM31CR60J476M 47 1206 OUT COUT TDK C3225X5R0J476M 47 1210 COUT MURATA GRM32ER71C226M 22 1210 COUT TDK C3225X5R1C22M 22 1210 For the input capacitor, two 10μF low ESR ceramic Checking Transient Response capacitors are recommended. For the recommended The regulator
in „Schaltregler - maximaler Spulenstrom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
TAIYO YUDEN TMK316BJ106ML 10 1206 C MURATA GRM31CR60J476M 47 1206 OUT COUT TDK C3225X5R0J476M 47 1210 COUT MURATA GRM32ER71C226M 22 1210 COUT TDK C3225X5R1C22M 22 1210 For the input capacitor, two 10μF low ESR ceramic Checking Transient Response capacitors are recommended. For the recommended The regulator
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
TAIYO YUDEN TMK316BJ106ML 10 1206 C MURATA GRM31CR60J476M 47 1206 OUT COUT TDK C3225X5R0J476M 47 1210 COUT MURATA GRM32ER71C226M 22 1210 COUT TDK C3225X5R1C22M 22 1210 For the input capacitor, two 10μF low ESR ceramic Checking Transient Response capacitors are recommended. For the recommended The regulator
in „Woher Eingangsschwingung am Buck“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN-1126.pdf
GRM31CR72A105MA01K 2 C2 1.0 µF, X7R, 100V, 1206 Murata/GRM31CR72A105MA01K 3 C3 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 4 C4 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 5 C5 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 6 C6 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 7 C7 22 µF, X5R, 25V, 1210 Murata/GRM32ER61E226KE15 8 C8 1000 µF, 16V, alum elect low ESR Suncon/16ME1000WGL 9 C9 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 10 C10 220 nF, X7R, 250V, 1210 Murata/GRM32DR72E224KW01L 11 C11
in „180VDC-Netzteil Ausgangsstrom zu gering“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Devices.txt
M251 9 HLMP6 9 G6A-234P 9 E4R 9 DIODE-MINIMELF 9 CPOL-EUSMCB 9 CPOL-EUE5-6 9 CPOL-EUE3.5-10 9 C-EUC1210 9 C5/4.5 9 C5/3.5 9 BYV27 9 BC847CSMD 9 BC808-16-PNP-SOT23-BEC 9 86SMX 9 7SEG-CA 9 74HC573N 9 2N3904 9 233-102 8 WIDERSTÄNDE_SMDR1210 8 TUXGR_16X2_R2 8 TLC59116TSSOP-PW 8 S202S11 8 S14K275 8 RCHIP_0805
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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Datei
Packages.txt
SMARTLED-TTW 26 R0603R 25 SOT23-BEC 25 E1,8-4 25 C2.5-4 24 TQFP44 24 SOD64-12 24 SAL41B 24 RCL_C1206K 24 R1210 24 E5-4 24 E5-10,5 24 C2,5-4 23 0309/12 22 -XXR0603 22 MA03-1 22 F09H 22 D10 22 2X05 21 MA05-2 21 JP5Q 21 HDSP-M 21 B3F-31XX 20 WIDERSTAND_SMD_0,25W_3,2X2,6 20 QS 20 G6K-2F 20 C3216 20 2,54/1,0 20 1X05
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
bs208.pdf
DSS drain-source breakdown −V GS= 0 200 − - V voltage −ID= 10 A −DSS drain-source leakage curren−V DS= 130 V − − 1 A V GS= 0 −DSS drain-source leakage curren−V DS= 70 V − − 25 A −V GS= 0.2 V −GSS gate-source leakage current−V GS= 20 V − − 100 nA V DS= 0 −VGS(th) gate-source threshold V GS= VDS 0.8 −
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BOM-GH-TFT.pdf
FFC40BC_P0.5 FPC/FFC 40pol., Bottom-Contakt, Pitch 0,5mm0,55 0,55 16 L3, L8 2 Induktor, LQH43CN100K03L 1210 0,85 1,70 17 L6, L7 2 Ferrite-Bead, DCR-0R45,Z1K, I 200mA 0805 0,15 0,30 18 R2 1 1,2K 0805 0,06 0,06 19 R3, R4, R5, R6, R7, R8 6 47K 0805 0,06 0,36 20 R9 1 39K 0805 0,06 0,06 21 R10 1 12K 0805 0,06
in „Grasshopper und TFT Display“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SCHEMATIC1___PAGE1.pdf
C5 A6 7 A4 DQ4 19 D13 VCC FREEZE/QUOT BR/CS0 VCC D9 10n 10n 10n A7 A5 DQ5 D14 RW 102 MODCLK CSBOOT DS1210 A8 6 A6 DQ6 20 D15 103 R/W CSBOOT 140 STBY A9 5 A7 DQ7 21 104 SIZ1 2 VCCO 27 A8 V1 SIZ0 105 SIZ0 D0 139 D0 D0 2 1 R2A 10k VCC 6 TOL A10 26 A9 HLMP-1640 D1 138 D1 D1 3 1 R2B A11 23 A10 AS 106 AS D2
in „Schaltung mit 68332“ · Mikrocontroller und Digitale Elektronik ·
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Datei
230523_Log.txt
qLagerBVarAfterClose 14:31:53 F: qLagerBVarBeforeOpen 14:31:53 F: -qLagerBVarBeforeOpen 14:31:53 F: dsLagerBVarDataChange 14:31:53 F: TBildList.GetBKisteFotoID.BildBVarKiste 14:31:53 F: qryBeforeOpen_ 14:31:53 SELECT Kiste_ID FROM bauteilkiste WHERE ID=1210 14:31:53 F: -qryBeforeOpen_ 14:31:53 F: qryBeforeOpen
in „EleLa - Elektronik Lagerverwaltung V4.0“ · Projekte & Code ·
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PDF
BSN10.pdf
drain-source leakage current VDS = 40 V; GS = 0 − − 1 A ±GSS gate-source leakage current ±VGS = 20 V; DS = 0 − − 100 nA VGS(th) gate-source threshold voltage D = 1 mA; VGS = VDS 0.4 − 1.8 V R drain-source on-resistance I = 100 mA; V = 10 V − 8 15 DS(on) D GS D = 100 mA; VGS = 5 V − 12 20 D = 10 mA; VGS
in „Pegelwandler lässt TWI erfrieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
TEST.asm
ret ;****************************************************************************** berechnung: ; DS1820/DS18S20/DS1920: Gelesene Daten aufbereiten, Erhöhung der Mess- ; Genauigkeit durch Algorithmus nach Datenblatt; die Formel wurde etwas ; modifiziert, so dass mit ganzzahligen Werten gerechnet werden
in „Vorzeichen Ausgeben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
catalog.pdf
Gauge, 18.8 mV/kPa, 0 kPa, 250 Page 57/87 Bauteileliste vom 12.08.2022 kPa, 4.85 V, 5.35 V RAM MPN: DS1245Y-70+ [ID]: 000304 [Price]: 32.23 USD [QTY]: 2 [Category]: RAM [Desc]: DS1245 Series 1024 kb (128 k x 8) 70ns Commercial Temp Non-Volatile SRAM DIP-32 MPN: DS1230Y-70+ [ID]: 000305 [Price]: 22.7 USD
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PDF
catalog.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 3.26 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 2.92 USD
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PDF
catalog-3.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 4.4923 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 4.0238
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PDF
Bauteile.pdf
Bauteil RAM BS62LV256SCP70 8 BitRAM 18 59 Bauteil Relais AZ8-1CH-12DEA Zettlert 67 60 Bauteil ROM DS2401 64BitROM 40 61 Bauteil SchottkyDiode USD 945 45V 16A 22 62 Bauteil SchottkyDiode UJD1210K2 10A 1200V Bedrahtet 4 63 Bauteil Shunt Widerstand R068 68mΩ 1% 82 64 Bauteil Spannungsregler LP2951ACM 42
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PDF
Knauf_Therm_Trittschalld__mmplatte_045_DES_sm.pdf
Trittschalldämmplatte EPS 045 DES sm CE-Kennzeichnung DIN EN 13163 EPS-DIN EN 13163 - T1-L1-W1-S1-P3-BS50-DS(N)5-SD30/20/15/10-CP3/2 Anwendungsgebiet DIN V 4108, Teil 10 DES sm (oberseitige Deckendämmung unter Estrichen mit Schallschutzanforderungen) Brandverhalten DIN 4102 B 1 Brandverhalten DIN EN 13501-1
in „Ruhestörung, was ist den Nachbarn zuzumuten?“ · Offtopic ·
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PDF
cassegrain01.pdf
Fe Xe Ye Fc (mm) 180,0000 34,6314 83,0702 -100,0000 19,5658 429,6068 131,3 -475 967,0202 58,33 -475 Ds Sub ref dia (mm) 200,0000 34,6314 83,0702 -92,0000 17,0443 429,6068 117,84 -450 967,0202 52,35 -450 Dm Dia main Dish (mm) 1210,0000 34,6314 83,0702 -84,0000 14,6197 429,6068 105,11 -425 967,0202 46,7
in „Suche Wellen Adapter "ding" ?“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
68332_test.pdf
TP8 24 TPUCH8 PF1/IRQ1 101 PF1 TP9 23 TPUCH9 PF2/IRQ2 100 PF2 C4 TP10 22 TPUCH10 PF3/IRQ3 99 PF3 D9 DS1210 100n TP11 21 TPUCH11 PF4/IRQ4 98 PF4 VCC 8 VCCI VCCO 1 TP12 17 97 PF5 TP13 16 TPUCH12 PF5/IRQ5 96 PF6 2 6 TP14 15 TPUCH13 PF6/IRQ6 95 PF7 BT1 7 VBAT1 CEO TP1 TP15 14 TPUCH14 PF7/IRQ7 BATT. 3V VBAT2
in „Motorola MC68332 und BD32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Platinfuch_IIa_BOM_20210217.pdf
X7R Digi-Key 1276-2954-2-ND 0.019 0.430 C93, C96, C101, C102 4 6 C4, C5, C6, C7, C8, C90 Capacitor 1210 10µF / 25V / X7R Digi-Key 1276-1807-2-ND 0.081 0.489 5 10 C9, C10, C11, C12, C13, Capacitor 1210 22µF / 16V / X7R Digi-Key 1276-3395-2-ND 0.090 0.905 C14, C15, C16, C17, C18 6 6 C20, C68, C69, C84,
in „Platinfuchs IIa: Isolierter, bidirektionaler 45W DC/DC Wandler zum Laden/Entladen eines Liion-Akkus“ · Projekte & Code ·
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PDF
XPort_reference_design_and_guidelines.pdf
-bit A/D input will provide a number between 0 and 3FFH. • Temperature sensor input A Dallas/Maxim DS1722 digital thermometer is attached to the SPI interface of the micro controller. It can provide a temperature reading from –55C to +120C. • Bicolor LED indicator controlled by PIC A green/yellow led
in „Lantronix X-Port beschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
VAR-DT6CUSTOMBOARD_SCH_V1_1_Doc_V1_2.pdf
Approved By> Date: Monday, June 15, 2015 Sheet 2 of 8 5 4 3 2 1 5 4 3 2 1 03. DART-MX6 J14 DF40C-50DS-0.4V(51) J16 DF40C-80DS-0.4V(51) 2 1 2 1 4 GND DART-MX6 HPLOUT 3 HPLOUT 5 7 RGMII2_RCLK 4 RGMII2_RCLK(GPIO6[30]) DART-MX6 (GPIO6[19])RGMII2_TCLK 3 RGMII2_TCLK 7 5 LINEIN1_RP 6 LINEIN1_RP HPROUT 5 HPROUT
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PDF
Amp-30W-25-110MHz-BLF244-1.pdf
APPLICATION NOTE A wideband 30 W push-pull amplifier with two MOS transistors BLF244 (V = 28 V); range DS 25 − 110 MHz NCO8701 Philips Semiconductors A wideband 30 W push-pull amplifier with two MOS Application Note transistors BLF244 (V = 28 V); range 25 − 110 MHz NCO8701 DS CONTENTS 1 INTRODUCTION 2 AMPLIFIER
in „20MHz - 200MHz Isolator bzw. Zirkulator“ · HF, Funk und Felder ·
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PDF
BSS89.pdf
on-state resistance = 10 V; I = 400 mA − 4.5 6 DSon GS D yfs forward transfer admittance D = 400 mA; DS = 25 V 140 350 − mS Ciss input capacitance VDS = 25 V;GS = 0; f = 1 MHz − 45 − pF C output capacitance V = 25 V; V = 0; f = 1 MHz − 15 − pF oss DS GS Crss reverse transfer capacitance VDS = 25 V;GS =
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Datei
All.txt
LPV LPV 1 S1 DS01 DS-01 DIL/CODE SWITCH 1 S1 Druckschalter 6761 6761 1 S1 DIP04YL DIP04YL DIL/CODE SWITCH 1 S1 DIP03YL DIP03YL DIL/CODE SWITCH 1 S1 DA06 DA-06 DIL/CODE SWITCH 1 S1 DA02 DA-02 DIL/CODE SWITCH 1 S19 DT6
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
recommended.pdf
V I 5.4 V; O = 350 mA 145 200 r N-channel MOSFET on-resistance V = 3.5 V; I = 200 mA 170 m DS(ON) I O V I 3 V; O = 100 mA 200 N-channel MOSFET leakage V = 17 V 0.1 2 µA current DS POWER GOOD OUTPUT , LBI, LBO V Power good trip voltage V - V (PG) O 1.6% V ramping positive 50 Power good delay time
in „Kurz vorm Verzweifeln“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPS6211.pdf
V I 5.4 V; O = 350 mA 145 200 r N-channel MOSFET on-resistance V = 3.5 V; I = 200 mA 170 m DS(ON) I O V I 3 V; O = 100 mA 200 N-channel MOSFET leakage V = 17 V 0.1 2 µA current DS POWER GOOD OUTPUT , LBI, LBO V Power good trip voltage V - V (PG) O 1.6% V ramping positive 50 Power good delay time
in „DC DC Wandler Pins“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPS6211.pdf
V I 5.4 V; O = 350 mA 145 200 r N-channel MOSFET on-resistance V = 3.5 V; I = 200 mA 170 m DS(ON) I O V I 3 V; O = 100 mA 200 N-channel MOSFET leakage V = 17 V 0.1 2 µA current DS POWER GOOD OUTPUT , LBI, LBO V Power good trip voltage V - V (PG) O 1.6% V ramping positive 50 Power good delay time
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PDF
TPS6211.pdf
V I 5.4 V; O = 350 mA 145 200 r N-channel MOSFET on-resistance V = 3.5 V; I = 200 mA 170 m DS(ON) I O V I 3 V; O = 100 mA 200 N-channel MOSFET leakage V = 17 V 0.1 2 µA current DS POWER GOOD OUTPUT , LBI, LBO V Power good trip voltage V - V (PG) O 1.6% V ramping positive 50 Power good delay time
in „QFN Gehäuse.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPS6211.pdf
V I 5.4 V; O = 350 mA 145 200 r N-channel MOSFET on-resistance V = 3.5 V; I = 200 mA 170 m DS(ON) I O V I 3 V; O = 100 mA 200 N-channel MOSFET leakage V = 17 V 0.1 2 µA current DS POWER GOOD OUTPUT , LBI, LBO V Power good trip voltage V - V (PG) O 1.6% V ramping positive 50 Power good delay time
in „Trennung von analoger und digitaler Spannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LTC3490.pdf
istheripplevoltageduetotheoutputcapacitor CAPACITOR PART NUMBER DESCRIPTION ESR TDK C2012X5R0J475K 4.7µF, 6.3V, X5R in 0805 AVX 1210ZC475MAT 4.7µF, 10V, X7R in 1210 IRLED is the LED current ripple IPPFC is the LED peak pulsed forward current Taiyo Yuden CELMK316BJ475ML 4.7µF, 10V, X7R in 1206 PC Board Layout Checklist Input Capacitor
in „Step Up Wandler 1.5V -> 3.2 V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Masterarbeit.pdf
Formeln (7.1) und (7.2) [93] verwendet: uGS,2 u Ls,2 LS,2 uDS,2 fu = t2(u DS,2· 0,1) − 1 (uDS,2· 0,9) (7.1) uσ,Shunt Lσ,Shunt t = t (u · 0,9) − t (u · 0,1) (7.2) ru 2 DS,2 1 DS,2 uShunt RShunt uDS,2 in Formel (7.1) und (7.2) entspricht der Zwi- schenkreisspannung
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LT3800.pdf
a CC BOOST CC DS(ON) voltagecanbeusedtodetermineQ G.Requireddrivecur- normalized R DS(ON) vs Temperature curve in a MOSFET rent for a given FET follows the simple relation: data sheet. GATE = Q G(8V)• O TheC RSS termistypicallysmallerforhighervoltageFETs
in „LT3800 Frage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm3150.pdf
Device IN-SD VEN = 0V 32 55 µA Shutdown GATE Drive IQ-BST Boost Pin Leakage VBST – VSW = 6V 2 nA R DS-HG-Pull-Up HG Drive Pull–Up On-Resistance HG Source = 200 mA 5 Ω R HG Drive Pull–Down On-Resistance I Sink = 200 mA 3.4 DS-HG-Pull-Down HG Ω R DS-LG-Pull-Up LG Drive Pull–Up On-Resistance LG Source =
in „LM3150 zu geringe Ausgangsspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2621.pdf
Hand-Held Instruments v r e Typical Application Circuit r 10093412 © 2005 National Semiconductor CorDS100934 www.national.com 2 2 Connection Diagram M L Mini SO-8 (MM) Package 10093418 Top View Ordering Information NSC Package Package Order Number Package Type Supplied As Drawing Marking LM2621MMX Mini
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PDF
device_list_hilo_all03_v9-12.pdf
*CAT28F002B *CAT28F002T CAT28F010/I CAT28F010V5/I CAT28F020/I CAT28F512/I CAT28F512V5/I <<DALLAS>> DS1213B (2K*8) DS1213B (8K*8) DS1213C (32K*8) DS1213C (8K*8) DS1213D (128K*8) DS1213D (32K*8) DS1213D (512K*8) DS1213D (8K*8) DS1216B (2K*8) DS1216B/C/E (8K*8) DS1216C/D/E (32K*8) DS1216D/F (128K*8) DS1216F (32K*8) DS1216F (8K*8) DS1220Y/AB/AD DS1225AB/AD/D/E/Y DS1230Y/AB DS1235Y/AB DS1243Y DS1244Y DS1245EE DS1245Y/AB DS1248Y DS1286 DS12887 DS1386 (32K*8) DS1386 (8K*8) DS1387 DS1486 DS1630Y/AB DS1642 DS1643 DS1645EE
in „PROM programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NCO8703.pdf
MHz. The amplifier has been designed around 2 MOS transistors BLF177 which operate in class-AB at V DS= 50 V and I = 0.5 A/transistor. DQ The main properties at PO= 300 W are: Powergain: 22 to 23 dB Efficiency: 52.5 to 61% Return losses input: ≤ −15.5 dB 2nd harmonics: ≤ −25 dB 3rd harmonics: ≤ −16 dB
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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PDF
small_pcb.PDF
PIVFD25363838 PISTM32PC1/ADC119 PB4/JNTRST PISTM32F103RCT6056 C10 0.1uf PIVFD25363939 PISTM32PC2/ADC1210 PB3/JTDO/TRACESWO PISTM32F103RCT605 CO780 PIVFD25364040 DHT_SDA 1PISTM32PC3/ADC131 PD2/TIM3_ETR PISTM32F103RCT6054 7805 GND PISTM32VSSARCT6012 PC12 PISTM32F103RCT6053 PI780501 PI780503VCC Moni3.3V PISTM32VDDARCT6013
in „STC LED Cube 8x8x8 RGB“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nokia_6085_rm-198_service_schematics_v2.pdf
1k0 Meas 600R/100MHz Vbus 5 1n0 1 MICB2 600R/100MHz D+ 6 2 MIC2P L2001 D- 7 3 MIC2N 2k2 1n0 1n0 MCZ1210AD102T data gnd 8 4 XEARL C2003 4 1 Xmicn 9 5 50R 10 XEARLC 33n to UEME to Mic Xmicp 6 XEARR C2004 50R 3 2 Xear_l_n 11 7 XEARRC 33n Xear_l_p 12 2k2 1n0 1n0 C2005 C2006 Xear_r_n 13 Xear_r_p 14 10n 10n
in „H179IT01 1,7" TFT aus Nokia Handy - Daten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bq24725.pdf
switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance, R DS(ON) and the gate-to-drain charge, Q GD. For the bottom side MOSFET, FOM is defined as the product of the MOSFET's on-resistance, R DS(ON), and the total gate charge, QG. FOM = R x Q ; FOM = R x Q (8) top DS(on) GD bottom DS(on) G The lower the FOM value, the lower the total power loss. Usually lower R DS(ON) has higher cost with the same package size. The top-side MOSFET loss includes conduction loss and
in „[V] 3St TI LiIon Lade/ Batterie-Management Chips: BQ24725RG und BQ24072RG“ · Markt ·
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PDF
mic3202.pdf
Bias Current V = 0V 0.1 1 µA DIM fDIM Maximum Dimming Frequency 20 kHz Internal MOSFET R MOSFET R DS(ON) ILX= 200mA 275 625 mΩ DS(ON) LX Leakage Current V EN= 0V; V INV =LX7V 5 50 µA Thermal Protection T LIM Over-Temperature Shutdown T Jising 160 °C T LIMHYS Over-Temperature Shutdown Hysteresis 20 Notes
in „MIC3202 : welche empfohlene Schaltung ist geeignet?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MAX1776.pdf
6TPA47M or 22µH, 1.20A, 95mΩ Sumida CDRH6D28-220NC 3 10 to 24 150 0.30 47µH, 0.54A, 440mΩ 22µF, 6.3V, 1210 case Sumida CDRH5D18-470 Taiyo Youden JMK325BJ226MM 4 10 to 24 75 0.15 100µH, 0.29A, 766mΩ 10µF, 6.3V, X7R, 1206 case Sumida CDRH4D28-101 Taiyo Youden JMK316BJ106ML 5.4µH, 1.6A, 56mΩ 100µF, 6.3V 5 5
in „Suche Lösung für mein Spannungsregler Problem(Strom sparen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PSpice_LibraryguideOrCAD.pdf
Rectifiers DLM10E DLM10E JDIODE.OLB Diodes and Rectifiers DPA05 DPA05 JDIODE.OLB Diodes and Rectifiers DS135C DS135C JDIODE.OLB Diodes and Rectifiers DS135D DS135D JDIODE.OLB Diodes and Rectifiers DS135E DS135E JDIODE.OLB Diodes and Rectifiers DS441 DS441 JDIODE.OLB Diodes and Rectifiers DS442 DS442 JDIODE.OLB Diodes and Rectifiers DS442X DS442X JDIODE.OLB Diodes and Rectifiers DS446 DS446 JDIODE.OLB Diodes and Rectifiers DS462 DS462 JDIODE.OLB Diodes and Rectifiers DS464 DS464 JDIODE.OLB Diodes and Rectifiers DSA010 DSA010 JDIODE.OLB
in „pSpice - Bauteil hinzufügen.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_S6B1713_R42.pdf
” 3.4 Word-processor version change Apr.1999 3.5 Modified error: pad No.113 (COMS) Y Coordinate: -1210 → -1140 (after) Oct.1999 4.0 Change VDD Range : 2.4V to 5.5V → 2.4V to 3.6V Jan.2000 4.1 Added detail information for several items Mar.2001 4.2 Change VDD Range : 2.4V to 3.6V → 2.4V to 5.5V Mar.2002
in „Frage zu static indicator glcd“ · Mikrocontroller und Digitale Elektronik ·
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LiveDesign_EB_Schematics-xilinx_spartan.pdf
Sheet 2 of10 Australia 2086 File: NEB_XTALOSC.SchDoc 1 2 3 4 1 2 3 4 5 6 6 DIGIT 7-SEGMENT DISPLAY A DS1 DS2 DS3 DS4 A DIG0_SEG0 R25 270R 7 a K 3 DIG1_SEG0 R26 270R 7 a K 3 DIG2_SEG0 R27 270R 7 a K 3 DIG3_SEG0 R28 270R 7 a K 3 DIG0_SEG1 R29 270R 6 8 DIG1_SEG1 R30 270R 6 8 DIG2_SEG1 R31 270R 6 8 DIG3_SEG1