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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no
in „Temperatursteuerung“ · Markt ·
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PDF
VRE104c_Thaler.pdf
excitation are some other applications which can benefit from the high accuracy of the VRE104. VRE104DS REV. C SEPT 1994 ELECTRICAL SPECIFICATIONS Vps =+15V, T = 25°C, RL = 10Kotherwise noted. VRE104 MODEL C CA M MA PARAMETERS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS ABSOLUTE MAXIMUM RATINGS
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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PDF
I-BOTT.PDF
5 shows, the DS1993 has four times the storage DS1994 be mounted within the equipment. Also when capacity of the DS1992. Of course, it has its own family theDS1994isusedinatouchenvironment,itgivesuse- code within the
in „Design eines hotplugfähigen I2C-Bussystems und Auswahl des Steckverbinders“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LCDTRTC.PDF
R2 DIO 1 VCC 2k2 B B 2 GND GND J3 DS1994 IC2 3 D1 L4940V5 VCC 2 1 VI VO 3 VCC VCC VCC D 1N5818 N 1 C1 C3 G C4 C2 C5 C6 C7 6..10V= 4 GND 47µ/25V µ1 2 µ1 47µ/25V µ1 µ1 µ1 J-LV-POWER GND GND GND GND GND GND GND GND Title A LCD Clock / Thermometer A Size Number Revision A4 Date: 18-Jun-2003 Sheet of File: F:\PROTEL\ds1994\ds1994.Ddb Drawn By: Dipl.Ing. Peter Dannegger 1 2 LCD-RS 3 4
in „Assembler lernen für Mikrocontroller-Programmierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162828-da-01-en-IRLML_2803TR.pdf
On-Resistance Ω GS D 0.40 VGS = 4.5V,DI = 0.46A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 0.87 S VDS = 10V, D = 0.46A 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 25 VDS = 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage -100 V =
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
familycode10.txt
memory DS1991 02 MultiKey iButton, 1152 bit secure memory DS1427 04 4K NVRAM memory and clock, timer, alarms DS1884 04 lt. ibview32.hlp/crc-by..3.pas DS1994 04 4K NVRAM memory and clock, timer, alarms DS2404 04
in „DS1820 DS18s20 Digital Thermometer 1-wire Beispiele ATmega8 Assembler“ · Projekte & Code ·
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PDF
irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sihfr014.pdf
CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 μA 60 - - V DS GS D VDS temperature coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.068 - V/°C Gate-source threshold voltage V GS(th) V DS= V GS, D = 250 μA 2.0 - 4.0 V Gate-source leakage I V = ± 20 V - - ± 100 nA GSS GS VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA V DS = 48 V, VGS = 0 V, J = 125 °C - - 250 Drain-source on-state resistance R DS(on) VGS = 10 V ID= 4.6 A b - - 0.20 Ω Forward transconductance gfs VDS = 25 V, D = 4.6 A 2.4 - - S Dynamic Input capacitance
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sta508__3_.pdf
. Symbol Parameter Test conditions Min. Typ. Max. Unit Power P-channel/N-channel R dsON Id= 1 A 200 270 mΩ MOSFET R dsON I Power P-channel/N-channel V = 35 V 50 µA dss leakage dss CC gN Power P-channel RdsON matching Id = 1 A 95 % g Power N-channel R matching Id = 1 A 95 % P dsON Dt_s
in „Kühlkörper mit Lüfter gegen Passivkühlkörper ersetzen SURE Verstärkermodul“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ZN_426.pdf
THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MAY 1994 DS3021-2.2 ZN426E8 8-BIT D-A CONVERTER The ZN426 is a monolithic 8-bit D-A converter containing an R-2R ladder network of diffused resistors with precision bipolar switches, and a 2.5V precision voltage
in „8-Bit ADC gesucht!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZN426.pdf
and s replacement product lists, please visit bhttp://products.zarlink.com/obsolete_products/ O MAY 1994 DS3021-2.2 ZN426E8 8-BIT D-A CONVERTER The ZN426 is a monolithic 8-bit D-A converter containing an R-2R ladder network of diffused resistors with precision bipolar switches, and a 2.5V precision voltage
in „DAC Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
zn426.pdf
THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MAY 1994 DS3021-2.2 ZN426E8 8-BIT D-A CONVERTER The ZN426 is a monolithic 8-bit D-A converter containing an R-2R ladder network of diffused resistors with precision bipolar switches, and a 2.5V precision voltage
in „AD-Wandler Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
haupt.pdf
rigen Fahrzeugs Fu˜ das dargestellte blaue Koordinatensystem gilt allgemein: cos’ ¢ads = dy sin’ a ds = dx (3.2) Daraus folgt durch Integration: Z Z s2 s2 s cos’ as) ¢ ds = y s sin’ as) ¢ ds = x (3.3) 1 1 Zur Positionsbestimmung ist somit nur noch der Verlauf des absoluten Winkels ’ (s) zu a ermitteln
in „Verstaerker mit inverser charakteristik“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
174505-da-01-en-adc_08041.pdf
LE OE 3 WR 8–BIT CLOCK SHIFT REGISTER 1 CS S INTR FF R Q 2 RD 5 4 19 INTR CLK IN CLK R August 31, 1994 556 Philips Semiconductors Linear Products Product specification CMOS 8-bit A/D converters ADC0803/4-1 DC ELECTRICAL CHARACTERISTICS VCC = 5.0V,CLK = 1MHz, TMIN TA TMAX , unless otherwise specified
in „A/D Wandler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADC0803_4.pdf
LE OE 3 WR 8–BIT CLOCK SHIFT REGISTER 1 CS S INTR FF R Q 2 RD 5 4 19 INTR CLK IN CLK R August 31, 1994 556 Philips Semiconductors Linear Products Product specification CMOS 8-bit A/D converters ADC0803/4-1 DC ELECTRICAL CHARACTERISTICS VCC = 5.0V,CLK = 1MHz, TMIN TA TMAX , unless otherwise specified
in „Verständnisfrage zum ADC080x (VIN-MIN/DC-Offset)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CFAG12864BTFHV_v3.0.pdf
Oscillation Frequency H OSC=430kHz L OSC=215kHz In the slave mode, it is connected to V . DD Duty Selection (DS1, DS2) It provides various duty selections according to DS1 and DS2. DS1 DS2 Duty L 1/48 L H 1/64 H L 1/96 H 1/128 Neotec Semiconductor Ltd. 11/19 NT7107DSRev0.3 20060607 www.neotec.com.tw Appendix Neotec
in „avr asm LCD Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZN425E.pdf
THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MAY 1994 DS3005-2.0 ZN425E8 8-BIT D-A/A-D CONVERTER The ZN425 is a monolithic 8-bit D-A converter containing an R-2R ladder network of diffused resistors with precision bipolar switches, and in addition a counter
in „Digital Analog Converter“ · Mikrocontroller und Digitale Elektronik ·
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Datei
FIFO.A
; FIFO.A 10625.02 ** 6.12.1994 ;******************************************************************* ; ; 8051-Code-Fragment. ; FIFO-Funktionen zur Benutzung mit einer seriellen Schnittstelle. ; FIFO ist maximal 256 Bytes gross und
in „Ringpuffer mit C515C“ · Mikrocontroller und Digitale Elektronik ·
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VN02N.pdf
VN02N HIGH SIDE SMART POWER SOLID STATE RELAY TYPE VDSS R DS(on) OUT VCC VN02N 60 V 0.4 6 A 26 V OUTPUT CURRENT (CONTINUOUS): 6A @ Tc=25 C 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE SHUT-DOWN OPEN DRAIN DIAGNOSTIC OUTPUT PENTAWATT PENTAWATT
in „Schottky-Diode gegen "reverse supply"“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CS8130.pdf
Corporation Copyright Crystal JUN ’94 P.O. Box 17847, Austin, TX 78760 Semiconductor Corporation 1994 DS134PP2 (512) 445-7222 FAX: (512) 445-7581 (All Rights Reserved) 1 CS8130 TRANSMITTER DRIVER CHARACTERISTICS (T = 25 °C; AAl V+ = 3.0V, Digital Input Levels: Logic 0 = 0V, Logic 1 = V+; unless otherwise
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PDF
irf840_und_irf840fi.pdf
Voltage V = V I = 250 A 2 3 4 V GS(th) DS GS D R DS(on) Static Drain-source On V GS = 10V D = 4.4 A 0.74 0.85 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)maxVGS = 10 V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max ID= 4.4 A 4.9 6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz V GS= 0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SP8630.pdf
DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3664-1·2 SP8630 600MHz 10 4 The SP8630 is an asynchronous emitter coupled logic divider which provides an ECLlll/10K compatible output when used with an external pulldown resistor. It requires an AC coupled
in „was ist das für ein IC?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
neuro.asm
cl ; because the full deinstallation causes mov ax,0fa02h ; warnings mov dx,5945h int 16h ks1: push ds xor ax,ax mov ds,ax les si,ds:[21h*4] ; get INT 21h handler pop ds mov ax,word ptr es:[si] ; get first two instructions of INT 21h cmp ax,05ebh ; Is it that fucking TBDRIVER ? jne ks2 mov word ptr es
in „Retro Fieber: Z80 oder 68000 ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STA508.pdf
Package ■ MULTIPOWER BCD TECHNOLOGY ■ MINIMUM INPUT OUTPUT PULSE WIDTH DISTORTION PowerSO36 ■ 200mΩ R dsON COMPLEMENTARY DMOS OUTPUT STAGE Table 1. Order Codes ■ CMOS COMPATIBLE LOGIC INPUTS Part Number Package ■ THERMAL PROTECTION STA508 PowerSO36 ■ THERMAL WARNING OUTPUT ■ UNDER VOLTAGE PROTECTION The
in „Heimkino ( Harman Hs 250 defekt )“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
hexiangning-20.pdf
PSpice has models fix-basic power semiconductor Power Electronicsand Variable-Speed D-i28October 1994.Conference,PubbcatronNo Q9IEE 1994 中国科技论文在线 544 http://www.paper.edu.cn P P .___ ..._.._,.________ b b Fig.1 The composite models of the IGBT (left), GTO (middle) and MCT (right). Table 1: IGBT model
in „Projekt: Leistungsstarkes Blitzgerät aus 12 Volt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SP8735.pdf
DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3673-1·1 SP8735 600MHz4 8 (BINARY OUTPUTS) The SP8735 is a 48 ECL counter with binary outputs. In addition, carry outputs are provided in TTL and ECL. The AC coupledinput requiresa600mVp-psignal andtheoutputsare
in „Dezimale Vorteilerkorrektur für Frequenzzähler“ · HF, Funk und Felder ·
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7401_IR.pdf
25 µA V = 16V, V = 0V, T = 125 °C DS GS J I Gate-to-Source Forward Leakage 100 nA VGS = 12V GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Qg Total Gate Charge 48 D = 4.1A Q Gate-to-Source Charge 5.1 nC V = 16V gs DS Qgd Gate-to-Drain
in „IRF7401 - Rds(On)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf-1228041.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ISL6545-Renesas.pdf
and P = Io r D +- Io V t F maximum output levels for the worst case response time. UPPER DSON 2 IN SW S P = Io x r x (1 - D) Input Capacitor Selection LOWER DS(ON) Use a mix of input bypass capacitors to control the voltage Losses while Sinking Current (EQ. 12) overshoot across the MOSFETs. Use small ceramic capacitors P = Io x r x D UPPER DS(ON) for high frequency decoupling and bulk capacitors to supply the P = Io r 1 – D +- IoV t F current needed each time Q t1rns on. Place the small ceramic LOWER DSON 2 IN SW S Where: D
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6344pbf.pdf
PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 12 V G 1 R DS(on) max 29 mΩ 3 D (@V GS = 4.5V) TM R DS(on) max S 2 Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits
in „LEDs: Konstantstrom-Multiplexing. Schaltung & Teile so ok?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NREL_SPA.pdf
589 579 UT ¼ UT1 ¼ UTC þ DUT1; ð3Þ the SPA against the Astronomical Almanac (AA) data for the years 1994–96, and 2004. where DUT1 is a fraction of a second, positive or neg- Users can obtain a detailed technical report about the algorithm from the National Renewable Energy Labo- ative value, that is added
in „sun-tracking mit mikrocontroller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NREL_SPA.pdf
589 579 UT ¼ UT1 ¼ UTC þ DUT1; ð3Þ the SPA against the Astronomical Almanac (AA) data for the years 1994–96, and 2004. where DUT1 is a fraction of a second, positive or neg- Users can obtain a detailed technical report about the algorithm from the National Renewable Energy Labo- ative value, that is added
in „Sonnenscheindauer Sensor selber bauen Eigenbau ATmega Assembler“ · Projekte & Code ·
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PDF
_DS1990R-DS1990R-F5.pdf
Configurations Examples of Accessories F3 SIZE F5 SIZE 3.10mm 5.89mm PART ACCESSORY 0.51mm 0.51mm BRANDING DS9096P Self-Stick Adhesive Pad o n® DS9101 Multipurpose Clip utt .co 16.25mm DS9093RA Mounting Lock Ring i m DS9093A Snap-In Fob 89 ® 01 000000FBC52B DS9092 iButton Probe Y 1-Wire 5 WW 0R# 17.35mm ZZ DS19
in „1-Wire: iButton: sendet keine Daten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
825_1_.pdf
Sachfragenorientierungen und Wahlentscheidung. Eine theoretische und empirische Analyse aus Anlass der Bundestagwahl 1994. In: Kaase, M./ Klingemann, H.-D. (Hrsg.): Wahlen und Wähler. Analysen aus Anlass der Bundestagswahl 1994: 173-219. ROTH, D. (1994): Was bewegt die Wähler? In: Aus Poltik und Zeitgeschichte, B 11: 3
in „Fachkräftemangel in Bayern“ · Ausbildung, Studium & Beruf ·
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ds1990a.pdf
1 and 7) 0.3 V VIH DS1990A (Notes 4 and 8) 2.2 Input High Voltage DS1990AA (Notes 4 and 8) 0.75 x V VPUP Output Low Voltage V OL IOL = 4mA 0.4 V DS1990A (Note 1) 1 µs Recovery Time tREC DS1990AA (Note 1) 5 µs DS1990A (Note
in „V 30 iButton DS1990A“ · Markt ·
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PDF
DS2482-800-DS2482S-800.pdf
DS2482-800 Eight-Channel 1-Wire Maste r www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS2482-800 is an I²C™ to 1-Wire bridge device § I²C Host Interface, Supports 100kHz and 400kHz that interfaces directly
in „1-Wire Leitungs Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Hilfe bei Bauteilidentifizierung erbeten (MOSFET, SOT23)“ · Offtopic ·
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PDF
IRLML2502.pdf
Threshold Voltage Coefficient ––– -3.2 ––– mV/°C gfs Forward Transconductance 5.8 ––– ––– S V DS= 10V, D = 4.0A I Drain-to-Source Leakage Current ––– ––– 1.0 V = 16V, V = 0V DSS μA DS GS ––– ––– 25 V DS= 16V, VGS = 0V, J = 70°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V nA Gate-to-Source
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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NTMFS4C09N.pdf
ISS Output Capacitance C 610 OSS VGS = 0 V, f = 1 MHz,DS= 15 V pF Reverse Transfer Capacitance C 126 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.101 RSS ISS GS DS Total Gate Charge Q 10.9 G(TOT) Threshold Gate Charge Q 1.9 G(TH) Gate−to−Source Charge Q 3.4 nC GS VGS = 4.5 V, DS = 15 V;DI = 30 A Gate−to−Drain Charge Q 5.4 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 22.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay
in „Kontrolle Eagle Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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PDF
91201.pdf
Static Drain-Source Breakdown Voltage VDS VGS = 0 V, D = 250 μA 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.048 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, D = 250 μA 2.0 - 4.0 V Gate-Source Leakage GSS VGS = ± 20 V - - ± 100 nA V DS = 60 V, GS = 0 V - - 25 Zero Gate Voltage Drain Current DSS μA V DS= 48 V, VGS = 0 V, J = 150 °C - - 250 b Drain-Source On-State Resistance RDS(on) VGS = 10 V ID= 78 A - - 0.009 Ω Forward Transconductance g V = 25 V, I = 78 Ab 38 - - fs DS D S Dynamic Input Capacitance
in „Transistor für PWM 30V 50A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NVMFS4C03N.pdf
Power, Single N-Channel, Logic Level, SO-8FL 30 V, 1.7 mW, 159 A www.onsemi.com Features V (BR)DSS R DS(on)AX D MAX • Small Footprint (5x6 mm) for Compact Design • Low R DS(on)to Minimize Conduction Losses 1.7 mW @ 10 V 30 V 159 A • Low Q Gnd Capacitance to Minimize Driver Losses 2.4 mW @ 4.5 V • NVMFS4C03NWF
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
projekt_snt.pdf
Spannungsfestigkeit eingeplant. Es standen zwei Bauteile zur Verfügung: • IXFX26N90 R ≈ 0,3Ω R ≈ 0,54Ω C ≈ 700pF DS_On(25°C) DS_On(125°C) DS • 2SK1489 R DS_On(25°C)1,0Ω RDS_On(125°C)1,84Ω C DS≈ 300pF 4.7.2 Durchlaßverluste Zur Berechnung der Durchlaßverluste wurden die primären Effektivströme bei maximaler und minimaler
in „2kW Gleichstromleistung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6402pbf.pdf
Coefficient ––– -0.009 ––– V/°C Reference to 25°C,DI = -1mA ––– 0.050 0.065 V = -4.5V, I = -3.7A R DS(on) Static Drain-to-Source On-Resistance Ω GS D ––– 0.080 0.135 VGS = -2.5V,DI = -3.1A V Gate Threshold Voltage -0.40 -0.55 -1.2 V V = V , I = -250μA GS(th) DS GS D gfs Forward Transconductance 6.0 –
in „TP4056 Polarity protection“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N7000-D.PDF
http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable • This is a Pb−Free Device* 60 VOLTS R DS(on) = 5 W N−Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage GS = 1.0 MW) VDGR 60 Vdc G Gate−Source Voltage − Continuous V GS ±20 Vdc S − Non−repetitivp
in „ESD-Demonstrator / 2n7000 MOS-FET zerstören“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BS170-D.PDF
(TO−226) Features http://onsemi.com • This is a Pb−Free Device* 500 mA, 60 Volts MAXIMUM RATINGS R DS(on) = 5.0 W Rating Symbol Value Unit Drain−Source Voltage VDS 60 Vdc N−Channel Gate−Source Voltage D − Continuous VGS ±20 Vdc − Non−repetitivp (t ≤ 50 ms) VGSM ±40 Vpk Drain Current (Note) D 0.5 Adc
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