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PDF
BF245.pdf
mA BF245C 12 25 mA I gate cut-off current V = −20 V; V = 0 − −5 nA GSS GS DS VGS = −20 V; DS= 0; j = 125 °C − −0.5 A Note 1. Measured under pulse conditionp: t = 300 s; δ ≤ 0.02. 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon field-effect transistors
in „Vorbereitung auf Klausur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BF245abc.pdf
12 25 mA GSS gate cut-off current V GS= −20 V; DS= 0 − −5 nA V = −20 V; V = 0; T = 125 °C − −0.5 A GS DS j Note 1. Measured under pulse conditionp: t00 s; δ ≤ 0.02. 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon field-effect
in „Welche Steilheit hat ein BF245C?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
93C86.pdf
on our web site (www.microchip.com/cn) to receive the most current information on our products. 1996-2012 Microchip Technology Inc. DS21132F-page 17 93C76/86 NOTES: DS21132F-page 18 1996-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices:
in „asm Code für EEPROM 93C86“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUK100-50.pdf
clamping voltage V IS0 V; I DM= 1 A; tp≤ 300 s; - - 70 V δ ≤ 0.01 IDSS Zero input voltage drain current V DS= 12 V; VIS 0 V - 0.5 10 A IDSS Zero input voltage drain current V DS= 50 V; VIS 0 V - 1 20 A I Zero input voltage drain current V = 40 V; V = 0 V; T = 125 ˚C - 10 100 A DSS DS IS j R DS(ON) Drain-source
in „MOSFET SCHMILZT“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK100-50GL_1.pdf
Safe operating area. T mb = 25 ˚C Fig.7. Typical on-state characteristics, T = 25 ˚Cj ID& I DM = f(V DS I DM single pulse; parameter t p ID = f(V DS parameter V ; t =IS50ps November 1996 5 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET RDS(ON)
in „Beleuchtung mit 8515 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BF998.pdf
0 0 −1600 −1200 −800 −400 0 400 0 4 8 12 16 20 V (mV) G1 ID(mA) VDS= 8 V; G2-S= 4 V; amb= 25 C. V DS= 8 V; amb= 25 C. Fig.7 Drain current as a function of gate 1 Fig.8 Forward transfer admittance as a function of voltage; typical values. drain current; typical values. 1996 Aug 01 5 NXP Semiconductors
in „Schaltung mit BF998“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK100-50GL_1.pdf
Safe operating area. T mb = 25 ˚C Fig.7. Typical on-state characteristics, T = 25 ˚Cj ID& I DM = f(V DS I DM single pulse; parameter t p ID = f(V DS parameter V ; t =IS50ps November 1996 5 Rev 1.300 Philips Semiconductors Product specification PowerMOS transistor BUK100-50GL Logic level TOPFET RDS(ON)
in „12V/2,5 A Sicher schalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MASM61PROGUIDE.pdf
language. Macro Assembler 6.1 (16-bit) - MSDN Archive Edition Page 51 Register Operands (C) 1992-1996 Microsoft Corporation. All rights reserved. To access far data, first set DS to the far segment and then restore the original DS when finished. Use the ASSUME directive to let the assembler know that
in „SumArray Proc Uses SI, Was heisst bitte das Uses bei MASM?“ · Softwareentwicklung ·
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PDF
24lc32a.pdf
operations are inhibited. The entire memory will be write-protected. Read operations are not affected. 1996 Microchip Technology Inc. Preliminary DS21144B-page 9 24LC32A NOTES: DS21144B-page 10 Preliminary 1996 Microchip Technology Inc. 24LC32A 24LC32A Product Identification System To order or to obtain information
in „Logikanalzyer mit FT232BL“ · Mikrocontroller und Digitale Elektronik ·
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Datei
familycode10.txt
Familycodes aus app155.pdf http://pdfserv.maxim-ic.com/en/an/AN155.pdf DS1990A 01 1 Wire Address only DS1990R 01 1 Wire Address only DS2401 01 1 Wire Address only DS2411 01 1 Wire Address only DS1205 02 lt. ibview32.hlp/crc-by..3.pas DS1425 02 MultiKey iButton, 1152 bit secure
in „DS1820 DS18s20 Digital Thermometer 1-wire Beispiele ATmega8 Assembler“ · Projekte & Code ·
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PDF
162828-da-01-en-IRLML_2803TR.pdf
On-Resistance Ω GS D 0.40 VGS = 4.5V,DI = 0.46A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 0.87 S VDS = 10V, D = 0.46A 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 25 VDS = 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage -100 V =
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
sections. given length of cable. FIGURE 4. 3 www.national.com Special Transceivers Solve Special Problems DS3696/A — Thermal shutdown DS36276 — Fail-safe transceiver: DS36C279 — Ultra-low-power CMOS reporting pin: This device provides an Standard transceiver pinout with transceiver with automatic-sleep open
in „Störung bei RS485“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
sections. given length of cable. FIGURE 4. 3 www.national.com Special Transceivers Solve Special Problems DS3696/A — Thermal shutdown DS36276 — Fail-safe transceiver: DS36C279 — Ultra-low-power CMOS reporting pin: This device provides an Standard transceiver pinout with transceiver with automatic-sleep open
in „RS485-Signale entstören“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
sections. given length of cable. FIGURE 4. 3 www.national.com Special Transceivers Solve Special Problems DS3696/A — Thermal shutdown DS36276 — Fail-safe transceiver: DS36C279 — Ultra-low-power CMOS reporting pin: This device provides an Standard transceiver pinout with transceiver with automatic-sleep open
in „RS485 FailSafe Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
sections. given length of cable. FIGURE 4. 3 www.national.com Special Transceivers Solve Special Problems DS3696/A — Thermal shutdown DS36276 — Fail-safe transceiver: DS36C279 — Ultra-low-power CMOS reporting pin: This device provides an Standard transceiver pinout with transceiver with automatic-sleep open
in „Stoersicherheit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
sections. given length of cable. FIGURE 4. 3 www.national.com Special Transceivers Solve Special Problems DS3696/A — Thermal shutdown DS36276 — Fail-safe transceiver: DS36C279 — Ultra-low-power CMOS reporting pin: This device provides an Standard transceiver pinout with transceiver with automatic-sleep open
in „RS485 Abschlusswiderstände“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TDA8703_PHI.pdf
Note 1. X = donÕt care. handbook, full pagewidth CLK 1.3 V sample N sample N + 1 sample N + 2 VI tHD dS 2.4 V D0 - Ddata N – 1 1.3 Vdata N data N + 1 0.4 V dLH MEA105 dHL Fig.3 Timing diagram. 1996 Aug 26 10 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter TDA8703
in „TDA 8703 AD Wandler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TDA8703_3.pdf
Note 1. X = donÕt care. handbook, full pagewidth CLK 1.3 V sample N sample N + 1 sample N + 2 VI tHD dS 2.4 V D0 - Ddata N – 1 1.3 Vdata N data N + 1 0.4 V dLH MEA105 dHL Fig.3 Timing diagram. 1996 Aug 26 10 Philips Semiconductors Product specification 8-bit high-speed analog-to-digital converter TDA8703
in „TDA 8703 AD Wandler, Entkopllungsfragen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS75160__161__162_GPIB-Transceiver.pdf
D 7 February 1996 5 1 6 A DS75160A/DS75161A/DS75162A / D IEEE-488 GPIB Transceivers S General Description Features 7 This family of high-speed-Schottky 8-channel bi-directionalnel bi-directional non-inverting transceivers
in „PM2528 als Scannermultimeter mit GPIB“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PCD3311C_3312C_2.pdf
received serially via the PCD 3312C has no MODE input as data input is via the I2C-bus. I C-bus only. 1996 Nov 21 6 Philips Semiconductors Product specification DTMF/modem/musical-tone generators PCD3311C; PCD3312C handbook, full pagewidth SPW 90% STROBE 10% tDH DS D0 D1 D2 D3 D4 D5 toneON) TONE oscillator
in „Tipsend2 Pollin“ · Mikrocontroller und Digitale Elektronik ·
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Datei
93c66.asm
********************************************************* #include equates.inc ORG $0800 ;RAM adr: DS $01 byte2: DS $01 byte3: DS $01 ORG $0D00 ;EEPROM HC912B32 MAIN: lds #$C00 CLR COPCTL BSR INIT ;Subroutine to initialize SPI+SCI registers ldx #Hello ;Text an RS232 JSR outstr jsr delay ldaa #0 staa
in „Motorola HC12 und Eeprom 93C66“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sn75lvds82.pdf
SN75LVDS82 www.ti.com SLLS259E–NOVEMBER 1996–REVISED JANUARY 2005 FLATLINK™RECEIVER FEATURES DGG PACKAGE • 4:28 Data Channel Expansion at up to 227.5 (TOP VIEW) Million Bytes per Second (Mbytes/s) Throughput D22 1 56 V CC • Suited for SVGA, XGA
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PDF
UBA2000.pdf
risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jan 03 14 Philips Semiconductors Product specification Electronic TL-lamp starter UBA2000T NOTES 1996 Jan 03 15 Philips Semiconductors — a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.
in „Schnellstarter für Leuchtstofföhren - welche taugen was?“ · Haus & Smart Home ·
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PDF
akkuladetechnik.pdf
Verfahren). Stück der Strom- + Hier wird die Umschaltung bereits am Wende- Spannungs-Kennli- Verst. – ds S Mikro- f(U) Spannungs- punkt ausgelöst, wo die Steigung eben wieder nie der Zelle durch- ds/dt dt computer messung abzunehmen beginnt – zeitlich vor dem Maxi- fahren, der Baustein Referenz mum (Bild
in „Akku-Technologien: Was ist richtig?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
I-BOTT.PDF
DS1990A yes yes yes* N/A N/A DS1991 yes yes yes no**** no DS1992 yes yes yes yes yes DS1993 yes yes yes yes yes DS1994 yes yes yes yes yes DS1995 yes yes yes yes yes DS1996 yes yes yes yes yes DS1982 yes
in „Design eines hotplugfähigen I2C-Bussystems und Auswahl des Steckverbinders“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Maxim-Dallas-Liste.txt
DS1631A 2w.m&s.nv.9-12b.1out.a=autostart ds1678 RT-Event-Recorder DS1731 2w.m&s.nv.9-12b.1out.no autostart DS1921H DS2480B Interface 1wire-v24 DS2490S Interface 1wire-usb 24pinSO DS75 2w.m&s.vol.9-12b.1out.no
in „Temperatursteuerung“ · Markt ·
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PDF
182613-da-01-de-kmy24.pdf
mm praktisch überall ein- setzen Tabelle 1 Technische Kurzdaten deSensors KMY24 102 Components 34 (1996) Heft 3 Bild 2 Das Vertikal- bzw. Horizontaldiagramm der Patchantenne bei 2,45 GHz Modul voreilend, bei Entfernung vom Mo dul nacheilend gegenüber VD,(Bild 4)Da- bei weist das Dopplersignal V,, immer
in „Phasenverschiebung Auswerten“ · Mikrocontroller und Digitale Elektronik ·
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Datei
AN_111.bas
will be ~3Kb so its NOT possible to run in DEMO-environment anyway ' Platform(s) : Atmel devkit ~1996, used "AVR ISP programmer"-setting ' Dev - uC : Atmel AT90s8515 (AVR) @ 4 Mhz ' BASCOM-AVR IDE Version : 1.11.6.2 Compiler: Version 1.11.6.2 (released) ' This is a TWO-sensor DS18b20 thermometer displayed
in „ds18s20 mit Bascom unter Proteus“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MTW8N60E.PDF
Drain Current IDSS Adc (VDS = 600 Vdc, GS = 0 Vdc) — — 10 (V = 600 Vdc, V = 0 Vdc, T = 125⋅C) — — 100 DS GS J Gate–Body Leakage Current (V = 〉 20 Vdc, V = 0) I — — 100 nAdc GS DS GSS ON CHARACTERISTICS (1) Gate Threshold Voltage VGS(th) (VDS = VGS DI = 250 Adc) 2.0 3.0 4.0 Vdc Temperature Coefficient (Negative) — 7.0 — mV/⋅C Static Drain–Source On–Resistance (V= 10 Vdc, I = 4.0 Adc) R — 0.46 0.55 Ohm GS D DS(on) Drain–Source On–Voltage (V = 10 Vdc) V Vdc GS DS(on) (D = 8.0 Adc) — 3.2 4.8 (D = 4.0 Adc,JT = 125⋅C) — — 4.6 Forward Transconductance DS = 15 Vdc,DI = 4.0 Adc) gFS 4.0 8.5 — mhos DYNAMIC CHARACTERISTICS
in „Identifizierung Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
gP000-FKA44780.h
| P2.0|Taster für Programmwahl //8 MHz X2OUT- | P1.0..P1.7|Daten FKA // | | // | P3.0|Gate MOSFET DS2482-DS18B20 // a.B. UTXD0 |P3.4 P3.1|<-> SDA Daten Leitung I2C (29) a.B.= nicht angeschlossen // a.B. URXD0 |P3.5 P3.2| (30) // i.B. UTXD1 |P3.6 P3.3| -> SCL Serial Clock Out (UCLK) (31) i.B. in Betrieb
in „LCD-Modul TC1602E-01 von Pollin ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
–20 — — V ID= –10 mA, V GS= 0 voltage Gate to source breakdown V (BR)GSS ±20 — — V IG= ±100 µA, V DS0 voltage Gate to source leak current I — — ±10 µA V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 µA V = –16 V, V = 0 DSS DS GS Gate to source cutoff voltage V –1.0 — –2.5 V I = –1 mA, V = –10 V GS(off) D DS Static drain to source on stateR DS(on) — 0.05 0.08 ID= –5 A, VGS= –10 V*1 resistance — 0.09 0.14 ID= –5 A, VGS= –4 V*1 1 Forward transfer admittance |yfs 6 9 — S ID= –5 A, VDS –10 V* Input capacitance
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LMD18200_-_HBr__cke.pdf
supply voltages up to 55V Y Numerically controlled machinery Y Low R (ON) typically 0.3X per switch Y DS Computer printers and plotters Functional Diagram TL/H/10568–1 Connection Diagram and Ordering Information Order Number LMD18200T See NS Package TA11B TL/H/10568–2 Top View C 1996 National SemiconductTL
in „LMD18200 current sense Charakteristik. Erfahrung?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NDS356AP.pdf
September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode -1.1 A, -30 V, DS(ON)= 0.3Ω @ V =GS.5 V power
in „nds355/nds356“ · Markt ·
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PDF
564932.pdf
–30 — — V ID= –10 mA, V GS = 0 voltage Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 A, V DS0 voltage Gate to source leak current I — — ±10 A V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 A V = –25 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) –1.0 — –2.5
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Article_Linear_Power_MOSFETs.pdf
circuit or off.In the ohmic region,the � deviceactsasaresistorwithanalmostconstanton-resistance � (R DS ) and is equal to the drain voltage (V ) divDSed by ��������������� ON ����������� the drain current (I ).DS the linear mode of operation,the �������� device operates in the current-saturated region
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Linear_Power_MOSFETS_Basic_and_Applications.pdf
or off. In the Ohmic region, the device acts as a resistor with almost a constant on- resistance R DS (on)nd is equal to V ds Ids.he linear-mode of operation, the device operates in the ‘Current-Saturated’ region where the drain current (I ) ds a function of the gate-source voltage (V )gsnd defined by: I K (V V ) g (V V ) Equation (1) ds gs gs(th) fs gs gs(th) where Kis a parameter depending on the temperature and device geometry and g is the fs current gain or transconductance. When the drain voltage (V ) isDsncreased, the positive
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NDT455N.pdf
Drain-SourceBreakdownVoltage V = 0 V, I = 250 µA 30 V DSS GS D I ZeroGateVoltage DrainCurrent V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate-BodyLeakage,Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate-BodyLeakage,Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V GateThresholdVoltage V
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
projekt_snt.pdf
Elektrotechnik Tabellen Kommunikationselektronik, Braunschweig, Westermann Schulbuchverlag GmbH, 1996, S. 41 18 von 48 Projektarbeit 4.7 Gegentakttransistoren 4.7.1 Spannungsfestigkeit Die maximale Drain-Source Spannung U DS_maxbeträgt an den Schaltern unter Berücksichtigung der transforma- torischen
in „2kW Gleichstromleistung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
wp266.pdf
Advanced Security Techniques (for advanced security techniques using Spartan-3A and Spartan-3AN FPGAs) 3. DS529, Spartan-3A FPGA Family Data Sheet WP266 (v1.1) April 22, 2008 www.xilinx.com 10 R References 4. DS557, Spartan-3AN FPGA Family Data Sheet 5. DS610 , Spartan-3A DSP FPGA Family Data Sheet 6. WP261, IP Security in FPGAs 7. XAPP780, FPGA IFF Copy Protection Using Dallas Semiconductor/Maxim DS2432 Secure EEPROMs Virtex Family Security White Papers 1. WP155, Triple DES Encryption in Selected Virtex-II Devices 2. WP261, IP Security in FPGAs CoolRunner-II Security Application Notes and White
in „Reverse Engineering verhindern/erschweren“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
NDM3000.pdf
DrainCurrent VDS ±20 V, V =GS V All ±1 µA T J55 C ±25 µA IGSS Gate-BodyLeakage,Forward VGS ±20 V, V DS0 V All ±100 nA ON CHARACTERISTICS (Note3) V GateThresholdVoltage V = V , I = -250 µA Q1, Q3, Q5 -1 -1.6 -3 V GS(th) DS GS D T =125 C -0.7 -1.25 -2.2 J V = V , I = 250 µA Q2, Q4, Q6 1 1.7 3 DS GS D T
in „L298 Nachfolger???“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-Wire-Networks.pdf
DS1920: QuickView -- Full (PDF) Data Sheet QuickView -- Full (PDF) Data Sheet DS1921G: DS1963L: QuickView -- Full (PDF) Data Sheet DS1963S: QuickView DS1971: QuickView -- Full (PDF) Data Sheet DS1973: QuickView
in „AVR für wenig Geld im LAN“ · Mikrocontroller und Digitale Elektronik ·
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PDF
guidelines_for_reliable_1_wire_networks.pdf
DS1920: QuickView -- Full (PDF) Data Sheet QuickView -- Full (PDF) Data Sheet DS1921G: DS1963L: QuickView -- Full (PDF) Data Sheet DS1963S: QuickView DS1971: QuickView -- Full (PDF) Data Sheet DS1973: QuickView
in „DS18B20 - 10m Leitung, Position des Widerstandes“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NC7S14page1.pdf
N January 1996 7 S Revised August 2004 1 4 T n NC7S14 y o TinyLogic HS Inverter with Schmitt Trigger Input g c General Description Features H The NC7S14 is a single high performance CMOS Invert■ Space saving SOT23
in „[S] NC7S14 oder TC7S14 (SC70) für STK500 gesucht“ · Markt ·
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PDF
sammelbestellung.pdf
Bustransceiver 1.8/2.5/3.3V 16-Bit Transceiver 2 Versand sofort RoHS: RoHS-konform Mouser-Nr.: 700-DS1337 2 2,17 € 4,34 € Herst.- Nr.: DS1337+ Verfügbarkeit 2 Versand sofort Hersteller: Maxim Integrated Products Beschr.: Echtzeituhr I2C Serial RTC 1 von 3 17.12.2012 01:09 Mouser Electronics - Händler
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PDF
AN162.pdf
the DS18X20/DS1822 1-Wire® temperature sensor in a microcontroller environment Abstract: This application introduces the user to simple 1-Wire software for interfacing a microcontroller to the DS18B20, DS18S20
in „Temperaturfühler identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Sommer.c
& (day - wday) < 21 ) szeit = SOMMER; */ /************************************** Neue Regelung ab 1996 **********/ if( month > 3 && month < 10 ) szeit = SOMMER; if( month == 3 && (day - wday) >= 25 ) szeit = SOMMER; if( month == 10 && (day - wday) < 25 ) szeit = SOMMER; if( szeit == WINTER && (fp = fopen
in „PCF8583 Sommer/Winterzeit“ · Mikrocontroller und Digitale Elektronik ·