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axpert_vm_iii5000__c.pdf
the MOSFET aMOSFET TOSHIBA/TK100E08N1 214A 80V N BULK TO-)20 Parts Attribute Reference values Failure status CSD19505KCS (VMIII-3200)Resistor GS: 11.75k Short or explosion TK100E08N1 (VMIII-5200) GD: 115.8k DS: OL Diode SD: 0.463V DS: OL Note1: When you use the
in „PV Wechselrichter startet nicht mehr und verursacht Kurzschluss bzw. hohen Strom“ · Analoge Elektronik und Schaltungstechnik ·
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68332_test.pdf
15 D2 A3 10 A2 I/O3 15 D10 D9 D4 133 42 A4 A4 9 17 D3 A4 9 17 D11 D5 132 D4 A4 43 A5 A5 8 A3 I/O4 18 D4 A5 8 A3 I/O4 18 D12 D6 131 D5 A5 44 A6 A6 7 A4 I/O5 19 D5 A6 7 A4 I/O5 19 D13 D7 130 D6 MC68332ACAG16-25M A6 45 A7 A7 6 A5 I/O6 20 D6 A7 6 A5 I/O6 20 D14 D8 D7 A7 A8 A8 A6 I/O7 D7 A8 A6 I/O7 D15 D9
in „Motorola MC68332 und BD32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905.pdf
. Typical Output Characteristics 1000 2.0 I = -64A c D ) a ( s t s e R 1.5 r TJ= 25°C n u 100 O C T = 175°C e ) c J r e u o l 1.0 o - a - t r - i N i 10 r ( r D D , 0.5 , n ID ( - D VDS = -25V R 1 20µs PULSE WIDTH 0.0 VGS = -10V 4 5 6 7 8 9 10A -60 -40 -20 0 20
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mtouch_ug.pdf
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, In-Circuit Serial hold harmless Microchip from any and all damages, claims
in „Näherungsschalter durch 1mm Aluminium“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
edison-module_HG_331189.pdf
I S port. Table 18 Intel® Edison I2S available formats Mode Priority Frame rate Bits/ Number of Frame- Frame Frame Frame rate Notes sample slots to-data polarity width inaccuracy offset I S master 1 192K
in „Intel Edison Breakout Board“ · Mikrocontroller und Digitale Elektronik ·
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Datei
therm_ds18b20.c
=========================== * Projekt: Netzwerk-Thermometer * Modul: Treiber für den 1-Wire Sensor DS18B20 * Vereinfachte Version für nur einen Sensor (ROM funktion wird nicht verwendet) * * Quelle: http://teslabs.com/openplayer/docs/docs/other/ds18b20_pre1.pdf * in abgewandelter Form * Autor: Helmut
in „DS18B20: Problem mit Temperaturauslesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AVRnDxBoard.pdf
2 1K R22 D11 P6 A1 10 P5 A2 3 VCC VCC VCC 1K R21 D10 9 1K R20 D9 P4 7 P3 ~{INT}3 1K R19 D8 6 R44 R45 1K R18 D7 5 P2 14 3K3 3K3 P1 SCL 1K R17 D6 4 D 15 JP16 JP17 P0 N SDA 1 2 1 2 G Q3 Q4 B 8 3 4 3 4 D D J6 TWI-0 B 3 G G 3 1 I2C EN SDA S 1 1 S 2 SCL 2 2 3 BSS138
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STW12NK90Z.pdf
breakdown voltage VDS = max rating I Zero gate voltage V = max rating, 1 µA DSS drain currentGSV= 0) DS 50 µA TC = 125°C Gate-body leakage GSS current (V = 0) VGS = ± 20V ±10 µA DS V Gate threshold voltage V = V , I = 100µA 3 3.75 4.5 V GS(th) DS GS D Static drain-source on RDS(on) VGS = 10V,DI = 5.5A
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO4459.pdf
Drain-Source Breakdown Voltage ID=-250 A, V GSV -30 V V =-30V, V =0V -1 IDSS Zero Gate Voltage Drain Current DS GS A TJ=55°C -5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V ±100 nA V Gate Threshold Voltage V =V I =-250 A -1 -1.5 -2.5 V GS(th) DS GS D ID(ON) On state drain current V GS10V, V =DSV -30 A V GS10V, I =D6.5A 33 42 m R DS(ON) Static Drain-Source On-Resistance V GS=-4.5V, D =-5A 56 60 m gFS Forward Transconductance V DS=-5V, D =-6.5A 14 S V Diode Forward Voltage IS=-1A,V GSV -0.8 -1 V SD IS Maximum Body-Diode Continuous
in „P-Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFHS8342-DataSheet-v01_01-EN.pdf
IRFHS8342PbF HEXFET Power MOSFET V 30 V TOP VIEW DS V GS max ± 20 V D R DS(on) max D 1 6 D D 16.0 mΩ D G (@V GS = 10V) D 2 D 5 D Q g(typical) 4.2 nC D (@V = 4.5V) D S GS G 3 S 4 S S I D 8.5 d A 2mm x 2mm PQFN (@T c(Bottom) 25°C) Applications • Control
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CPC1981Y.pdf
Typical On-Resistance vs.Temperature Typical Load Current vs. LoadVoltage Typical Maximum DC (IL0.18A rms) (F =5mA,T =A5ºC) Load Current vs.Temperature 27 0.25 0.35 0.20 24 I =5mA 0.30 : 21 F )0.15 ) e (0.10 (0.25 c 18 n0.05 n t IF=10mA r r0.20 i 15 u 0 u IF20mA e 12 C-0.05 C0.15 - a a IF10mA n 9 L-
in „Welches SSR für Zündunterbrecher bzw. Alternativen zum SSR?“ · Analoge Elektronik und Schaltungstechnik ·
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PHC2300_3_1_.pdf
V VGS gate-source voltage (DC) − ±20 V VGSth gate-source threshold voltage V N-channel V DS = VGS; D= 1 mA 0.8 2 V P-channel V DS = VGS; D = −1 mA −0.8 −2 V D drain current (DC) T s 80 °C N-channel − 340 mA P-channel − −235 mA RDSon drain-source
in „[S] PHC2300 komplementär Mosfet SO8 / Bestellung Farnell/HBE“ · Markt ·
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PDF
74hct595.pdf
CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT WAVEFORMS V CC(V) W shift clock pulse width see Fig.7 4.5 20 − − ns HIGH or LOW storage clock pulse widthsee Fig.8 4.5 20 − − ns HIGH or LOW master reset pulse width see Fig.10 4.5 25 − − ns LOW su set-up time DS to SH_CP see Fig.9 4.5 20 − − ns set-up time see Fig.8 4.5 20 − − ns SH_CP to ST_CP h hold time DS to SH_CP see Fig.9 4.5 3 − − ns rem removal time see Fig.10 4.5 13 − − ns MR to SH_CP max maximum clock see Figs 7 and 8 4.5 24 − − MHz pulse frequency SH_CP or ST_CP
in „74HC595 wie steuert man das latch an?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC595_Philips.pdf
CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT WAVEFORMS V CC(V) W shift clock pulse width see Fig.7 4.5 20 − − ns HIGH or LOW storage clock pulse widthsee Fig.8 4.5 20 − − ns HIGH or LOW master reset pulse width see Fig.10 4.5 25 − − ns LOW su set-up time DS to SH_CP see Fig.9 4.5 20 − − ns set-up time see Fig.8 4.5 20 − − ns SH_CP to ST_CP h hold time DS to SH_CP see Fig.9 4.5 3 − − ns rem removal time see Fig.10 4.5 13 − − ns MR to SH_CP max maximum clock see Figs 7 and 8 4.5 24 − − MHz pulse frequency SH_CP or ST_CP
in „Definierter Einschaltzustand beim 74HC595“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC595_Shiftregister.pdf
CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT WAVEFORMS V CC(V) W shift clock pulse width see Fig.7 4.5 20 − − ns HIGH or LOW storage clock pulse widthsee Fig.8 4.5 20 − − ns HIGH or LOW master reset pulse width see Fig.10 4.5 25 − − ns LOW su set-up time DS to SH_CP see Fig.9 4.5 20 − − ns set-up time see Fig.8 4.5 20 − − ns SH_CP to ST_CP h hold time DS to SH_CP see Fig.9 4.5 3 − − ns rem removal time see Fig.10 4.5 13 − − ns MR to SH_CP max maximum clock see Figs 7 and 8 4.5 24 − − MHz pulse frequency SH_CP or ST_CP
in „Unterschied 74HCT595, 74HC595“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC_HCT595.pdf
CONDITIONS SYMBOL PARAMETER MIN. TYP. MAX. UNIT WAVEFORMS V CC(V) W shift clock pulse width see Fig.7 4.5 20 − − ns HIGH or LOW storage clock pulse widthsee Fig.8 4.5 20 − − ns HIGH or LOW master reset pulse width see Fig.10 4.5 25 − − ns LOW su set-up time DS to SH_CP see Fig.9 4.5 20 − − ns set-up time see Fig.8 4.5 20 − − ns SH_CP to ST_CP h hold time DS to SH_CP see Fig.9 4.5 3 − − ns rem removal time see Fig.10 4.5 13 − − ns MR to SH_CP max maximum clock see Figs 7 and 8 4.5 24 − − MHz pulse frequency SH_CP or ST_CP
in „74HC595 und ATtiny13 Lauflicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
___MPASM_USER_S_GUIDE_with_MPLINK_and_MPLIB.pdf
BANKSEL init_entry_to_addr movfp init_entry_to_addr, FSR0 ; First we see if destination is GPR (>0x20) movlw 0x1f cpfslt init_entry_to_addr ; If it is < 0x1F continue testing, goto _init_sec_gpr ;otherwise it’s 0x20 or higher (GPR) ; It’s not GPR, let’s see if it’s SFR or unbanked between 0x18 and 0x1F movlw 0x18 cpfslt init_entry_to_addr ;is it <=17 ? goto _start_copying_data ;No, it’s between 0x18 and 0x1F ;It’s <=17, let’s see if it is 0x00-0x0F or 0x10-0x17 movlw 0x0F cpfsgt init_entry_to_addr goto _start_copying_data
in „Anfängerfrage zu Assembler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM710.PDF
Various Input Overdrives Response DS010410-18 DS010410-16 DS010410-17 5 www.national.com PrintDate=1997/05/16 PrintTime=10:46:12 7730 ds010410 Rev. No. 1 Proof 5 Typical Performance Characteristics (Continued) Output Voltage Level Output Sink Current Maximum Power Dissipation DS010410-19 DS010410-20 DS010410-21 Book Extract End www.national.com 6 PrintDate=1997/05/16 PrintTime=10:46:12 7730 ds010410 Rev. No. 1 Proof 6 THIS PAGE IS IGNORED IN THE DATABOOK 7 PrintDate=1997/05/
in „Hameg HM103-2 triggert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
(Continued) Timing Number Minimum Maximum Parameter 17 tRC 50 – 18 tCEA – 45 19 tREA – 30 20 tRHZ – 30 21 tCHZ – 20 22 tOH 15 – 23 tREH 15 – 24 tIR 0 – 25 tWHR 60 – 3.14 Pulse-Width Modulator The PWM can be programmed to select one of two clock signals as its source
in „PHILIPS VP5500 VoIP Telefon bei Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
038-05058-01-X-MLCC_REVB03_SKIT.pdf
2 B B PL_3V3 REGULATOR 5V0_IN U4 PL_3V3 MPM3810AGQB-Z POWER TEST POINTS 7 5-6 VIN OUT TP19 TP21 1 C20 1 1 C18 1 C19 Do Not Stuff Do Not Stuff 22UF R18 22UF 22UF 2 25V OUT_S 12 68 kOhms 2 10V 2 10V 2 PL_1V2 PL_3V3 FB 10 PL_3V3_FB VCCOEN_PL_M2C 9 EN 1 2 CC_PL_PGOOD 8 N N N 3-4 1 PG G G GNC R20 P P A 15.0K
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DS2450_ADU.pdf
slots. As long as the DS2450 is busy with conversions the bus master will read 0’s. After the conversion is completed the bus master will receive 1’s instead. Since in a open-drain environment a single 0 overwrites multiple
in „1-Wire Quad ADC“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Main.c
include <stdio.h> #include <user_io.c> #include <avr/signal.h> #include <avr/interrupt.h> #include <ds18s20.h> #include <ds18s20.c> /* FCPU = 8 MHz _delay_ms = 32,77 ms _delay_us = 96,00 us*/ float temperature=0; uint8_t t1=13,t2=13,t3=10,t4=11; int main (void) { // PORTA (LED-OUT) DDRA = 0xFF; PORTA = 0x00; // PORTB (ISP/DS1822) DDRB = 0x20; PORTB = 0xFF; for(;;) { show_digit (DIG_1,t1); show_digit (DIG_2,t2); show_digit (DIG_3,t3); show_digit (DIG_4,t4); read_scratchpad (); temperature = (scratchpad [1] << 8) + scratchpad
in „float-wert umwandeln“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Pinbelegung einer Tang Nano 20K FPGA-Entwicklungsplatine
, 86, IOL4AA, HSPI_CSN, 79, IOT27B, 2812_DIN, GCLKC_0, DS2_CLK, LED2, IOL49A, 17, GND, DS2_GND, DS2_CMD, LED5, IOL51B, 20, 3V3, DS2_ATTN, DS2_DATA, LED4, IOL51A, 19, 72, IOT40B, HSPI_DIN1, DS2_ATTN, DS2_3V3, LED3, IOL49B, 18, 71, IOT44A, HSPI_DIN0, DS2_DATA, DS2_GND, DS2_CLK, Tang Nano 20K, UPDATE, BANK0, VIO=3.3V, BANK1, VIO=3.3V, BANK6, VIO=3.3V
in „Neuigkeiten von Flash und MRAM, neue Boards für Entwickler“ · Mikrocontroller und Digitale Elektronik · · Screenshots
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PDF
AR0130_DS_D.pdf
VDD_IO 12 37 VAA_PIX PIXCLK 13 36 VAA VDD 14 35 AGND SCLK 15 34 VAA SDATA 16 33 NC 17 32 RESET_BAR NC 18 31 VDD_IO 19 20 21 22 23 24 25 26 27 28 29 30 NC D C C Y R R D H R D D D D N N B A D E S E L L G V D _ S R L G A A D A E E F I _ _ S O E T E E R M I R L F PDF:1596224327/Source:6660323313 . AR0130DS
in „Auswahl des richtigen dsp“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
Datenblatt_PIC12F1822.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „PIC12F1822-PWM Mode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt_PIC12F1822.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „Interrupt-PIC12F1822“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „Auflösung PWM-Mode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „8Bits und 2Bits in eine Integer-Variable“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „Timer2 auf 10bit einstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC12FLF1822PIC16FLF1823.pdf
01000 = 1:8192 (Interval 256 ms typ) 01001 = 1:16384 (Interval 512 ms typ) 01010 = 1:32768 (Interval 1s typ) 01011 = 1:65536 (Interval 2s typ) (Reset value) 01100 = 1:131072 (2 17) (Interval 4s typ) 01101 = 1:262144 (2 18) (Interval 8s typ) 01110 = 1:524288 (2 19) (Interval 16s typ) 20 01111 = 1:1048576
in „PIC16lf1823 General purpose I/Os mit Schmitt Trigger ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GA4A4P.pdf
0.8 1 1.2 1.4 1.6 IC- Collector Current - mA VIN- Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 20 16 Ω - 12 r s s 8 e - 4 R 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 4 Data Sheet D16494EJ2V0DS GA4xxx [GA4F4M] TYPICAL CHARACTERISTICS (T A = 25°C) COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR
in „Was für ein Bauteil?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Forum.PDF
PCmueoue18 DSI1.Lan _P DSI PIJ20disp0 PIJ10disp06 DSI DSI0.Clo _Nl c k0N PCmueoue15 PCmueoue12 DSI1.Clo _N ck 0N DSI PIJ20disp0 NL DS I0 0Cl c k0P DSI0_CN DSI1_CN N LDS I1 0C ck 0P PIJ10disp07 DSI0.Clo _P PCmueoue17
in „Raspberry Pi Compute Module 3 (Carrier Board)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TPH1R104PB_Datasheet.pdf
specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) I 120 A D Drain current (pulsed) (Note 1) DP 360 Power dissipation (Tc= 25 ) PD 132 W Power dissipation (t = 10 s) (Note 2) 3.0 Power dissipation (t = 10 s) (Note 3) 0.96
in „MOSFET's umgekehrt betrieben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPH1R104PB_datasheet_en_20181228.pdf
specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) I 120 A D Drain current (pulsed) (Note 1) DP 360 Power dissipation (Tc= 25 ) PD 132 W Power dissipation (t = 10 s) (Note 2) 3.0 Power dissipation (t = 10 s) (Note 3) 0.96
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·
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PDF
A300_25AA640A_25LC640A-MIC.pdf
'\7W,S\(D RKS7HSQKO J\SQ,H'H6$ 37W;K,6 FVIFE9 DS21830D-page 18 © 2008 Microchip Technology Inc. 25AA640A/25LC640A /HDG3OVWL3F'X)V7+3LLV.R'LX/GV%70>V6V03--±2JV0341V++V,±O*V$7.Z2( 0±'G, 2H708Q\0/H(80S<77\,80OWS
in „SPI funktioniert nicht“ · Mikrocontroller und Digitale Elektronik ·
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Datei
BAUD.ass
TIC2 equ $12 timer intput compare register2 TIC3 equ $14 timer intput compare register3 TOC2 equ $18 timer output compare register2 TOC3 equ $1A timer output compare register3 TOC4 equ $1C timer output compare register4 TOC5 equ $1E timer output compare register5 TCTL1 equ $20 timer control register1
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PDF
tps2020_1_.pdf
DRAIN-SOURCE ON-STATE RESISTANCE vs vs Ω INPUT VOLTAGE Ω JUNCTION TEMPERATURE m 60 m − − 60 c I = 0.18 A c I = 0.18 A n O a O s i s e R 50 R 50 e t a t S - n n O T J 125°C e c 40 r 40 VI= 2.7 V u u S S n i VI= 3.3 V a r D TJ= 25°C D i 30 t 30 a t VI= 5.5 V S TJ= −40°C S − −) n n ( 20 ( S D 20 rD 2.5 3
in „DC/DC als Sicherung für AT90USB <-> PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
dokserv.pdf
Pulse-Generator ov D23 Q D26 Q D<0:5> D24 6 D<5> I2 D Q Q D5 D Q D Q D Q D<4> D Q Q Q Q D8 D9 D10 D20 & Q D4 D<3> > > > D Q D11 1 D12 1 D13 1 D14 D15 D16 D Q D Q D Q Q D3 D<2> Q Q Q D Q R R R Q _del D2 D<1> = D Q D17 1 D18 & Q DSen D1 D<0> D19 D Q Q D0 enable enable 3 D1 s3 D1 2 s2 16 1 D16 16 s1 D16
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PDF
RJH60F5DPQ.pdf
off) 105 ns tf 85 ns Inductive load Note3 C-E diode forward voltage V ECF1 1.2 2.1 V IF= 20 A V ECF2 1.5 V IF= 40 A Note3 C-E diode reverse recovery time trr 90 ns IF= 20 A diF/dt = 100 A/s Notes: 3. Pulse test R07DS0326EJ0200 Rev.2.00 Page 2 of 7 Jul 22, 2011 RJH60F5DPQ-A0 Preliminary
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
uP1542-DS-F00A0.pdf
% Over Voltage Protection VFB_OVP Percentage of V REF -- 125 -- % Over Voltage Protection Delay -- 20 -- us uP1542T -- -225 -- Over Current Threshold V PH uP1542Q -- -300 -- mV uP1542V -- -375 -- OCP Programmable Range VOCP uP1542S/U -375 -- -100 mV OCS Source Current for OCP IOCS -- 20 -- uA Setting
in „Ersatz Mosfet für ein Defektes Nas System“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlb3034pbf-Datasheet.pdf
Characteristics Fig 2. Typical Output Characteristics 10000 2.0 e I = 195A n D ) t VGS = 10V (1000 s t e e n r TJ= 175°C O 1.5 C 100 TJ= 25°C e ) e u e r o l o - a - 10 - o - i N i r (1.0 r , , n ID 1 ( VDS = 25V S ≤60µs PULSE WIDTH D R 0.1 0.5 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ,
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PDF
IRLB3034PbF.pdf
Characteristics Fig 2. Typical Output Characteristics 10000 2.0 e I = 195A n D ) t VGS = 10V (1000 s t e e n r TJ= 175°C O 1.5 C 100 TJ= 25°C e ) e u e r o l o - a - 10 - o - i N i r (1.0 r , , n ID 1 ( VDS = 25V S ≤60µs PULSE WIDTH D R 0.1 0.5 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ,
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB3034.pdf
Characteristics Fig 2. Typical Output Characteristics 10000 2.0 e I = 195A n D ) t VGS = 10V (1000 s t e e n r TJ= 175°C O 1.5 C 100 TJ= 25°C e ) e u e r o l o - a - 10 - o - i N i r (1.0 r , , n ID 1 ( VDS = 25V S ≤60µs PULSE WIDTH D R 0.1 0.5 1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100120140160180 TJ,
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
gbdso_uk.pdf
D1 14 A3 8 A3 A12 18 A12 P2 R15 C20 D1 IC7 A4 7 A4 A13 19 A13 k D2 15 D2 6 A5 A14 20 100k 1 100n L3 5V C D3 18 D3 A5 A14 2V5 CW 2V5 R17 D4 19 EPROM A6 5 A6 A15 21 A15 100µH D4 4 A7 D0 22 100k D5 20 D5 A7 29 A8 D1 23 D0 2
in „Bameboy-LCD mit avr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
gbdso_uk.pdf
D1 14 A3 8 A3 A12 18 A12 P2 R15 C20 D1 IC7 A4 7 A4 A13 19 A13 k D2 15 D2 6 A5 A14 20 100k 1 100n L3 5V C D3 18 D3 A5 A14 2V5 CW 2V5 R17 D4 19 EPROM A6 5 A6 A15 21 A15 100µH D4 4 A7 D0 22 100k D5 20 D5 A7 29 A8 D1 23 D0 2
in „Alternative zu teurem Oszilloskop“ · Analoge Elektronik und Schaltungstechnik ·
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AN-9010b_MOSFET_Basics__FAI.pdf
: FQP10N20 Test Condition : O = 10[A] V GS = 10[V] Division : GS (t) : 2[V]/div t : 1[ sec]/div 0[V] At t3, VDS becomes V DS(on)=IO DS(on) , and the transient is completed. And the MOSFET is placed at the boundary
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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LM3490.pdf
µF, and T =25˚C. L OUT A . Dropout Voltage Dropout Voltage vs Load Current vs Junction Temperature DS100071-19 DS100071-20 Ground Pin Current Ground Pin Current vs Input Voltage vs Input Voltage DS100071-9 DS100071-10 Ground Pin Current Ground Pin Current vs Load Current vs Junction Temperature DS100071
in „kann mir jemand dieses ic identifizieren?“ · Mikrocontroller und Digitale Elektronik ·
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Bauteile.pdf
1KSerielEEPROM 50 16 Bauteil EEPROM 93LC46A 1KB,Seriell 50 17 Bauteil Feinsicherung 250 V 4,0A Flink PE10St. 40 18 Bauteil Feinsicherung 250 V 0,315A Träge PE10 St. 20 19 Bauteil FlashSpeicher M28F512-12C1 SMD FlashSpeicher 6 20 Bauteil FolienKondensator B81130X2 100nF 250VAC 643 21 Bauteil FolienKondensator KNB1530
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IRL1004_IR.pdf
1000 2.5 e D = 130A ) TJ= 25 C c ( t t i 2.0 e100 T = 175 C e r J R C n ) e O e1.5 r c l o 10 u a - S r t o o1.0 n - (N r a D D , 1 , I n 0.5 ( VDS =250V S 20µs PULSE WIDTH R VGS =10V 0.1 0.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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IRL1004_IR.pdf
1000 2.5 e D = 130A ) TJ= 25 C c ( t t i 2.0 e100 T = 175 C e r J R C n ) e O e1.5 r c l o 10 u a - S r t o o1.0 n - (N r a D D , 1 , I n 0.5 ( VDS =250V S 20µs PULSE WIDTH R VGS =10V 0.1 0.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 V GS , Gate-to-Source Voltage (
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
