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2n6032.pdf
MAXIMUM RATINGS Ratings Symbol 2N6032 2N6033 Units Collector-Emitter Voltage V CEO 90 120 Vdc Collector-Base Voltage V CBO 120 150 Vdc Collector Current I 50 40 Adc C Emitter-Base Voltage V EBO 7.0 Vdc Base Current B 10 Adc Total Power Dissipation @ T = +25 C (1) 140 W C PT Operating & Storage Temperature
in „Transistor: BD249C“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datenblatt_transistor.pdf
C = 500 mA IB= 50 mA 0.7 V Saturation Voltage VBE(on) Base-Emitter On C = 500 mA V CE= 1 V 1.2 V Voltage hFE∗ DC Current Gain C = 100 mA VCE = 1 V for BC337-25 160 400 for BC337-40 250 600 fT Transition Frequency C = 10 mA V CE = 5 V f = 100MHz 100 MHz C CBO Collector-Base E = 0 VCB = 10 V f = 1 MHz 5 pF Capacitance ∗ Pulsed: Pulse duration = 300 s, duty cycle ≤ 2 % 2/4 BC337-25 / BC337-40 TO-92 MECHANICAL DATA mm inch DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 4.32 4.95 0.170
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DS_Micrel_ETH-TRANSIVER_KSZ9031RNX.pdf
half-duplex 1 = PHY can perform 1000Base-T F.13 1000Base-T full-duplex RO 1 Full-Duplex 0 = PHY cannot perform 1000Base-T full-duplex 1 = PHY can perform 1000Base-T 1000Base-T half-duplex F.12 RO 1 Half-Duplex 0 = PHY cannot perform 1000Base-T
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NCP5104-D.PDF
Side Y Y L120 L120 E E TOFF Low Side D100 D100 O O T 80 T 80 A TOFF Low Side A A A P 60 P 60 R R P 40 P 40 F F O 20 O 20 T T 0 0 10 12 14 16 18 20 −40 −20 0 20 40 60 80 100 120 VCC, VOLTAGE (V) TEMPERATURE (°C) Figure 10. Turn OFF Propagation Delay vs. Figure 11. Turn OFF Propagation Delay vs. Supply
in „Suche SMD Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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Micrel_phy.pdf
transmit operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 7.4 10Base-T receive operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 7.5 Loop-back operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
in „Ethernet PHY für STM32F107“ · Mikrocontroller und Digitale Elektronik ·
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Vorlage_100x75.pdf
1 2 3 4 5 6 7 8 A A BAS16 +5V U$1 +12V 100nF U$2 C21 0 2 +5V BAS16 C22 1 R K 1 6 PKD3001D 100nF U$11 PMD3001D 1 R R 1 U$16 1 R18 10E PH20100S 10E BAS40 D R 1 U$5 N D D3 PH20100S BAS214 U$21 D6 G G 1 K 1 P1.28-MCOA2 3V6 U$20 R 1 BAS21 R P1.19-MCOA0 U$4 PMBF170 PMBF170 GND BAS16 +5V B GND B C 100nF K 7 U$3 - R 1 R O O C23 K 5 O O PMD3001D 1 R M U$15 M +5V PH20100S 10E BAS40 D PMD3001D G 9 2 0 BAS218 K 6 U$22 D9 1 0 R 1 U$12 1 R1.25
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EP22_10BaseT1L.pdf
EtherCAT-Protokoll syncen heitskritische Applikationen Kelvin-Kontakten und steuern. Seite 30 entwickeln. Seite 40 verhindern. Seite 80 KOMMUNIKATIONSTECHNIK // PROZESSAUTOMATION o TITELSTORY s k / 10BASE-T1L ist der nächste große Schritt hin zu einer durchgängigen Ethernet-Infra- o struktur – nicht zuletzt in der
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PDF
BJTransistor_2N2222A.pdf
TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500
in „DC DC Verstärkung“ · Analoge Elektronik und Schaltungstechnik ·
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2N2222_2222A.pdf
TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500
in „Transistor mit Basistrom im µA-Bereich schalten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2n2222-datasheet.pdf
TO-18) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 2N2222 − 60 V 2N2222A − 75 V VCEO collector-emitter voltageopen base 2N2222 − 30 V 2N2222A − 40 V C collector current (DC) − 800 mA Ptot total power dissipation Tamb≤ 25 °C − 500
in „Oszi v. SUN Motortester zeigt nur kurz einen Punkt.“ · Analoge Elektronik und Schaltungstechnik ·
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VAR-DT6CUSTOMBOARD_SCH_V1_1_Doc_V1_2.pdf
Debug DEBUG_VBUS 3 CSI_D0M 32 31 3V3OUT MIPI_CSI-2_CLK_18 34 33 VIO_1V8 36 35 C185 C184 C186 38 37 BASE_PER_3V3 3V3OUT 40 39 100nF 100nF 4.7uF C151 C152 UART_ENABLE 6U119 FB102 C170 C171 C175 FT230XQ 1 8 120R 1.2A DEBUG_VBUS_C 1uF 100nF AXK7L40227G 15 10 6 7 100nF 100nF 100nF 2 TXD I U VCC 16 RXD C O
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2sc5707.pdf
Collector-to-Emitter Saturation VoltagV (sat) C =(-)3.5AB I =(-)175mA (-230)160 (-390)240 mV CE IC=(-)2A,BI =(-)40mA (-240)110 (-400)170 mV Base-to-Emitter Saturation Voltage VBE (sat) IC=(-)2A, IB=(-)40mA (-)0.83 (-)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO C =(-)10 AE I =0 (-50)80 V Collector-to-Emitter
in „Dell TFT Reparatur“ · Mikrocontroller und Digitale Elektronik ·
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DTA124E-D.pdf
STYLE 6 1 MAXIMUM RATINGS (TA= 25°C) Rating Symbol Max Unit SC−70/SOT−323 XX MG CASE 419 Collector−Base Voltage V CBO 50 Vdc G STYLE 3 Collector−Emitter Voltage V CEO 50 Vdc 1 SC−75 Collector Current − Continuous C 100 mAdc XX M CASE 463 Input Forward Voltage VIN(fwd) 40 Vdc 1 STYLE 1 Input Reverse Voltage
in „Bauteil identifzieren“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Fehlerbericht.txt
P168_ThermOLED:360:27: error: 'UserVar' was not declared in this scope switch (int(UserVar[event->BaseVarIndex + 2])) { ^ _P168_ThermOLED:360:40: error: invalid use of incomplete type 'struct EventStruct' switch (int(UserVar[event->BaseVarIndex + 2])) { ^ _P168_ThermOLED:117:42: error: forward declaration
in „ESPEasy Sketch Kompilierungsfehler“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Makefile.txt
$(SDK_BASE)/,$(SDK_TOOLSDIR)) APPGEN_TOOL := $(addprefix $(SDK_TOOLS)/,$(APPGEN_TOOL)) SRC := $(foreach sdir,$(SRC_DIR),$(wildcard $(sdir)/*.c)) OBJ := $(patsubst %.c,$(BUILD_BASE)/%.o,$(SRC)) $(BUILD_BASE)/espfs_img.o
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2N3906.pdf
Units M B T 3 OFFCHARACTERISTICS 9 V (BR)CEO Collector-Emitter Breakdown Voltage* IC= 1.0 mA, IB= 0 40 V 0 6 V (BR)CBO Collector-Base Breakdown Voltage C = 10 µ, IE= 0 40 V V (BR)EBO Emitter-Base Breakdown Voltage E = 10 µ, IC= 0 5.0 V / P IBL Base Cutoff Current VCE = 30 V, VBE= 3.0 V 50 nA Z I Collector
in „SMD version vom 2n3906 / 2n3904“ · Mikrocontroller und Digitale Elektronik ·
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Datei
sevs_rech_CPUZ.txt
Temperature 0 47°C (116°F) [0x2F] (TMPIN0) Temperature 1 31°C (87°F) [0x1F] (TMPIN1) Temperature 2 40°C (104°F) [0x28] (TMPIN2) Fan 1 1527 RPM [0x1BA] (FANIN1) Fan PWM 0 0 pc [0x0] (FANPWM0) Fan PWM 1 0 pc [0x0] (FANPWM1) Fan PWM 2 0 pc [0x0] (FANPWM2) Register space LPC, base address = 0x0A30 00 01
in „Rechner bei Video-Aufnahmen zu lahm“ · PC Hard- und Software ·
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PDF
DatenblattOriginalLEDAiptekt20.pdf
R 0 -100 -80 -60 -40 -20 0 20 40 60 80 100 Angle (°) Copyright © 2008-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and XLamp are registered
in „Abstrhlfläche LED“ · Mikrocontroller und Digitale Elektronik ·
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metrahit-am-series-outdoor-db_d.pdf
OUTDOOR X U 100 mA 10 A 160 mV 160 mV 0,5 + 3 1,5 + 10 (> 200 D) 1,5 + 30 (> 200 D) A O O 1 A 100 A 40 mV 40 mV 0,9 + 10 1,5 + 10 (> 200 D) 1,5 + 30 (> 200 D) 11) A P 10 A: 5 m11) AMPRO 10 A 1 mA 600 mV 600 mV 0,9 + 10 1,5 + 10 (> 200 D) 1,5 + 30 (> 200 D) 16 A: 30 s A H 10 mA 1 A 16 mV 16 mV 0,1
in „Berechnung der Eigenunsicherheit eines DMM“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
t6963c.h
glcd_FONT_SELECT // narrow font #define glcd_FONT_WIDTH 6 // pixel width #define glcd_BYTES_PER_ROW 40 // 40 chars per row #define glcd_G_BASE 0x0400 // base address of graphics memory #else // normal font #define glcd_FONT_WIDTH 8 // pixel width #define glcd_BYTES_PER_ROW 30 // 30 chars per row #define
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KSZ8061MNX_MNG.pdf
KSZ8061MNX/KSZ8061MNG 10Base-T/100Base-TX Physical Layer Transceiver Preliminary Data Sheet Rev. D03 General Description The KSZ8061MN is a single chip 10Base T / 100Base TX Ethernet physical layer transceiver for transmission
in „supply current komplett?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
trxcomrj45avr-netiop24-29.pdf
81752375,81752376,81752121 FAX:86 755 81752963 - - E mail:trxcom@trxcom.com Http://www.trxcom.com 25 10/100Base-TX RJ45 Connector With Integrated Magnetics (Tab-Down) Trxcom Technology Inc E .620 15.75 .522 13.26 11.43 .630 16.00 .838 .322 .085 21.30 8.18 2.16 .100 4× .040 2.54 .036 1.02 0.915 1 8 .527 .128 13.40
in „ATxMegaBoard 4“ · Markt ·
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PDF
XPort_PB.pdf
CTS > Indicators (LED)Quantity: 50 Units • Programmable I/O: 3 PIO pins (software selectable) • 10Base-T connection • 1XPort RoHS Extended Temperature, with Network Interface XP1002000-05R • Li k & activity indicator - Full/half duplex • Interface: Ethernet 10Base-T or 100Base-TX (Auto-Sensing) Encryption
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sja1000_beschreibung.pdf
Lim 255 255 255 255 255 255 255 Stromgrenzwert ILim 100 255 255 50 255 30 100 Positionsregler K v 40 50 40 40 40 40 40 Proportionalver- stärkung Drehzahlregler K p 255 200 200 100 100 100 100 Proportionalver- stärkung Drehzahlregler In-K i 100 100 100 50 50 50 50 tegralverstärkung Drehzahlregler T 200
in „AVR und SJA1000 CAN Controller??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BD329.PDF
Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V V collector-emitter voltage open base − 20 V CEO VEBO emitter-base voltage open collector − 5 V C collector current (DC) − 3 A CM peak collector current − 3 A BM peak base
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BC368.pdf
OFFCHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage IC= 10 mA, I B 0 20 V V Collector-Base Breakdown Voltage I = 100 A, I = 0 25 V (BR)CES C µ E V (BR)EBO Emitter-Base Breakdown Voltage E = 10µA, IC= 0 5.0 V ICBO Collector-Cutoff Current VCB= 25 V, IE= 0 10 µ A VCB= 25 V, IE= 0, TA= 150°C
in „Transistor - Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
cDCF77.h
_t PROGMEM BitWeight[] = //*********************************************** { 1, 2, 4, 8, 10, 20, 40, 80 }; // BCD template < class SIG, // DCF77 signal input | TPin class LED, // DCF77 debug LED | TPin class Display, // display class TimeBase //, // precise sec //***********************************
in „Frage zu Interrupts in C++“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Mitsubishi__PM50CL1B120_e.pdf
Surge) Applied between : P-N, Surge value 1000 V Tstg Storage Temperature –40 ~ +125 °C V iso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms THERMAL RESISTANCES Limits Symbol Parameter Condition Min. Typ. Max. Unit R th(j-c)Q Junction to case Thermal
in „Schablone für Wärmeleitpaste: wie Maße?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datasheet_Shunts.pdf
mV Kelvin- outputs to the digital ammeter’s input terminals. All models feature a rugged phenolic base that provides 750V isolation to the shunt’s brass terminals, allowing for direct attachment to metal surfaces.A highly stable (+/–15ppm/°C) manganin sensing-element provides a wide –40 to +60°C operating
in „Operationsverstärker nichtinvertierende Grundschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XPort_DS.pdf
Operating range: Commercial Temp RoHS product: 0°C to +70°C (32°F to 158°F) Extended Temp RoHS product: -40°C to +85°C (-40°F to 185°F) Storage range: -40°C to +85°C (-40°F to 185°F) Relative Humidity Operating: 5% to 95% non-condensing Shock/Vibration Non-operational shock: 500 g's, Non-operational vibration
in „LANTRONIX XP100200K-03“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BC320-Motorola.pdf
BC BC BC Unit BC321, A, B 320 321 322 Collector-EmitteVoltage VCEO 45 30 20 Vdc BC322, B Collector-BaseVoltage VCBO 50 40 30 Vdc Emitter-BaseVoltage VEBO 6.0 5.0 5.0 Vdc CollectorCurrent- Continuous ic 150 mAdc CASE 29-02, STYLE 1 TotalDevice Dissipatio@Ta = 25°C PD 625 mW TO-92 (TO-226AA) Derateabove
in „[V] ca. 250-280St 2N3702 (PNP TO92) und 128St. BC320 (PNP TO92)“ · Markt ·
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PDF
BC320-Motorola.pdf
BC BC BC Unit BC321, A, B 320 321 322 Collector-EmitteVoltage VCEO 45 30 20 Vdc BC322, B Collector-BaseVoltage VCBO 50 40 30 Vdc Emitter-BaseVoltage VEBO 6.0 5.0 5.0 Vdc CollectorCurrent- Continuous ic 150 mAdc CASE 29-02, STYLE 1 TotalDevice Dissipatio@Ta = 25°C PD 625 mW TO-92 (TO-226AA) Derateabove
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PDF
AN758.pdf
R12 reduce the more ideal at the lower frequencies, was chosen. This supply voltage to a level below 40 V, which is the maximum represents a 5.55 Ohm base-to-base source impedance. In a Class C push-pull circuit, where the conduction angle input voltage of the regulator. D1 is the base-emitter junction of a 2N5190, in a Case is less than 180⋅, the base-to-base impedance would be 77 plastic package. The outline dimensions allow its use for about four times the base-to-emitter impedance of one device. In Class A where the collector idling current is
in „Stackpole Ferrit Kerne für RF Verstärker“ · HF, Funk und Felder ·
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PDF
_Motorola_AN758.pdf
R12 reduce the more ideal at the lower frequencies, was chosen. This supply voltage to a level below 40 V, which is the maximum represents a 5.55 Ohm base-to-base source impedance. In a Class C push-pull circuit, where the conduction angle input voltage of the regulator. D1 is the base-emitter junction of a 2N5190, in a Case is less than 180⋅, the base-to-base impedance would be 77 plastic package. The outline dimensions allow its use for about four times the base-to-emitter impedance of one device. In Class A where the collector idling current is
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PDF
2N4403-82294.pdf
VaAues are at Ts otherwise noted. B 4 Symbol Parameter Value Unit 4 3 VCEO Collector-Emitter Voltage -40 V — VCBO Collector-Base Voltage -40 V P VEBO Emitter-Base Voltage -5.0 V N IC Collector Current - Continuous -600 mA P G TJ,STG Operating and Storage Junction Temperature Range -55 to +150 °C n e Notes
in „moderner Ersatztyp für BC550 Audio low noise gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BFG591.pdf
Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 20 V VCEO collector-emitter voltage open base 15 V VEBO emitter-base voltage open collector 3 V I collector current (DC) 200 mA C Ptot total power dissipation up to s =
in „UKW-Prüfsender: Diverse Fragen!“ · HF, Funk und Felder ·
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Datei
ocl.txt
Built-in kernels with version (n/a) Device Extensions cl_khr_byte_addressable_store cl_khr_global_int32_base_atomics cl_khr_global_int32_extended_atomics cl_khr_local_int32_base_atomics cl_khr_local_int32_extended_atomics cl_khr_int64_base_atomics cl_khr_int64_extended_atomics cl_khr_fp64 cl_khr_extended_versioning
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Datei
clang_1.txt
Built-in kernels with version (n/a) Device Extensions cl_khr_byte_addressable_store cl_khr_global_int32_base_atomics cl_khr_global_int32_extended_atomics cl_khr_local_int32_base_atomics cl_khr_local_int32_extended_atomics cl_khr_int64_base_atomics cl_khr_int64_extended_atomics cl_khr_fp64 cl_khr_extended_versioning
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Datei
project1.c
); // dht11 port 1 ROM_SysCtlDelay( 40*us ); // wait 40us ROM_GPIOPinTypeGPIOInput(GPIO_PORTE_BASE, DHT11_PORT); // dht11 port auf Input ROM_SysCtlDelay( 20*us ); // wait 20 us // read dht11 port if( !ROM_GPIOPinRead(GPIO_PORTE_BASE, DHT11
in „Stellaris ARM Launchpad, ADC, UART, DHT11, RFM12, LCD“ · Projekte & Code ·
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PDF
BC847S.pdf
SOT-363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V 45 V CEO Collector-base voltage VCBO 50 Collector-emitter voltage VCES 50 Emitter-base voltage V 6 EBO DC collector current IC 100 mA Peak collector current ICM 200 Total power dissipation, T = 115 °C P 250 mW S tot Junction
in „Dual Transistor npn+pnp bei Reichelt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
INFINEON-BFP620_.pdf
Collector-emitter voltage V V CEO TA > 0 °C 2.3 TA≤ 0 °C 2.1 7.5 Collector-emitter voltage VCES Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current C 80 mA Base current I 3 B Total power dissipation) Ptot 185 mW TS≤ 96°C 150 °C Junction temperature Tj Ambient temperature T -65 ...
in „H - Detektor mit vorspannen von Dioden?“ · HF, Funk und Felder ·
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PDF
basic_interpreter.pdf
Verzeichnissstruktur: basict ---------- Makefile sendbas19200 compilesendbas tbasic.c tbasic.ihx adctest.bas array.bas ascii.bas blink.bas fakul.bas lauflicht.bas include --------- stm8s.h stm8_init.h stm8_gpio.h uart_tbasic.h src ------------- uart_tbasic.c stm8_init.c clean tools/bin ------- ch340reset cide
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Datei
dumprom_output.txt
=00009c50 base=039c0000 v5.0 tp0 spnego.dll 805f2e3c - 805f2e40 L00000004 unknown 09 00 00 00 805f2e40 - 805f2e88 L00000048 o32 struct spnego.dll 805f2e88 - 805f2ef4 L0000006c e32 struct 3 objs, img=212e entrypt=000023e4 base=039b0000 v5.0 tp0 cryptdll.dll 805f2ef4 - 805f2ef8 L00000004 unknown 09 00 00 00 805f2ef8 - 805f2f40 L00000048 o32 struct cryptdll.dll 805f2f40 - 805f2fac L0000006c e32 struct 3 objs, img=212e entrypt
in „Pollin - Receiver-Mainboard mit Twin DVB-[T,C] Tuner, NXP PNX8950EH“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SR0604100MSB.PDF
Packaging information ¡K ¡GA Bulk B ¡G TapingReel 2). Inductance Test Freq. at 100KHz / 0.1V. 3). Irms base on Temp.rise40 ¢J max. 4). Isat base on ¡µ L/L0A = 10 ¢H typ. E ¡X 07 ¡· SR0603 Series SRF RDC IDC Inductance Q Test Freq. (Hz) ( MHz) (£[ ) ( A ) DWG No. ( £gH) ref. L Q nom. max. max. ¡… SR06031R5MS
in „Pollin SMD-Induktivitäten identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
QM30HA-H_Transistormodul_Datasheet.pdf
W B Base current DC 1.8 A –CSM Surge collector reverse current Peak value of one cycle of 60Hz (half wave) 300 A (forward diode current) Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125
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PDF
lnix-s-a0001298418-1.pdf
grams (0.34 oz) Material Metal shell, thermoplastic case Temperature Extended Temp RoHS product: -40°C to +85°C (-40°F to 185°F) Storage range: -40°C to +85°C (-40°F to 185°F) Relative Humidity Operating: 5% to 95% non-condensing Shock/Vibration Non-operational shock: 500 g's, Non-operational vibration
in „[V] 1Stück gebrauchtes XPORT-EDGE_Seriell- LAN Modul (12€)“ · Markt ·
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PDF
lnix-s-a0001298418-1.pdf
grams (0.34 oz) Material Metal shell, thermoplastic case Temperature Extended Temp RoHS product: -40°C to +85°C (-40°F to 185°F) Storage range: -40°C to +85°C (-40°F to 185°F) Relative Humidity Operating: 5% to 95% non-condensing Shock/Vibration Non-operational shock: 500 g's, Non-operational vibration
in „[V] 1Stück neues Lantronix_XPORT_Seriell- LAN Modul (18€)“ · Markt ·
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PDF
1038_1_.pdf
The EM202 is Tibbo's new 100BaseT ethernet-to-serial module Home About Products News Quality Extras Registration HomeContact us The EM202 is Tibbo's new 100BaseT Ethernet-to-serial module Article options Email me The EM202 is a "RJ45
in „[V] 2St alte unbenutzte TIBBO Netzwerkmodule EM202-00“ · Markt ·
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lg_lh-cx245_cx246_cx247_cx640__1_.pdf
7 B 32 24,2526,27 25 31 Gear P2/ Bass A-8 B 21 25 Assembly 34 Gear Assembly P3 24 28 2, 3, 14, 32 Base Assembly P2 6Chasses A-8 B 23 25,31 /Base Assembly P3 27 25,31 33 Base Loading 3 Hooks A-8 B 22 29 2,3,14 34 Base Tension Chassis Embossing A-9 T 26 30 35 Arm Assembly IdleJog LockingTab A-9 T B:Bottom
in „Netzteil von LG LH-C360 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pkg.pdf
SEATING PLANE c 1 0.09 0.15 0.21 L1 D 9.90 10.20 10.50 DETAIL 'A' E1 5.00 5.30 5.60 e 0.65 BSC E 7.40 7.80 8.20 WITH LEAD FINISH L 0.55 0.75 0.95 b1 L1 1.25 REF. N 28 OC 0∞ 4∞ 8∞ c c1 R1 0.09 -- -- (b) 5 BASE METAL 6 SECTION A-A NOTES: 1. CONTROLLING DIMENSION: MILLIMETERS. 2. DIMENSIONING & TOLERANCES
in „Pinabstand aus dem Datenblatt ermitteln, ich blicke nicht durch“ · Mikrocontroller und Digitale Elektronik ·